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Part : TRANS. NPN TO92 Supplier : Philips Semiconductors Manufacturer : Chip One Exchange Stock : 1,704 Best Price : - Price Each : -
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TRANS. NPN TO92

Catalog Datasheet MFG & Type PDF Document Tags

STI3009

Abstract: ESM3004 TO-92 TO-66 TO-66 TO-1 TO-66 TO-66 N/A TO-66 TO-66 KT821A1 NPN 500m 500m 05 05 500m 05 05 , Diode Trans Diode Trans PNP NPN NPN NPN NPN NPN NPN NPN NPN NPN 80 80 80 90 90 90 90 90 90 90 90 100 100 , HSE3003 HSE3013 PT7933 NPN NPN NPN NPN PNP PNP PNP NPN PNP NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN , 350n NPN NPN NPN NPN PNP PNP NPN NPN NPN NPN 150 62 150 400 120 120 20 100 100 400 20 , ESM3007 STIP8006 KSC2233 NPN PNP PNP NPN NPN NPN PNP NPN NPN NPN 250 MJ3011 NPN NPN PNP NPN
Interconnect Devices
Original
2SC3676 STI3009 ESM3004 STIP-8006 ESM3002 2SA1227AP TRS-500 HSE830 BUW49 SS2007 SS2015 SS2003 SS2019
Abstract: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN , MHz Oscillator Circuit PN918 / MMBT918 NPN RF Transistor TO-92 Tape and Reel Data TO-92 , , f = 500 MHz 15 dB 30 mW 25 % PN918 / MMBT918 NPN RF Transistor (continued , PN918 / MMBT918 NPN RF Transistor (continued) (continued) Contours of Constant Gain , 50 100 VCE = 10V 80 70 60 50 40 0 2 4 TO-92 SOT-23 150 100 50 0 Fairchild Semiconductor
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mmbt918

Abstract: PN918 PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN , Circuit PN918 / MMBT918 NPN RF Transistor TO-92 Tape and Reel Data TO-92 Packaging , / MMBT918 NPN RF Transistor (continued) VCE = 5V 90 80 125 °C 70 60 25 °C 50 - , PN918 / MMBT918 NPN RF Transistor (continued) (continued) Contours of Constant Gain , 50 100 VCE = 10V 80 70 60 50 40 0 2 4 TO-92 SOT-23 150 100 50 0
Fairchild Semiconductor
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Intermediate frequency Semiconductor RF 14inch CBVK741B019 F63TNR PN2222N npn transistor wc

CBVK741B019

Abstract: F63TNR PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN , Circuit PN918 / MMBT918 NPN RF Transistor TO-92 Tape and Reel Data TO-92 Packaging , / MMBT918 NPN RF Transistor (continued) VCE = 5V 90 80 125 °C 70 60 25 °C 50 - , PN918 / MMBT918 NPN RF Transistor (continued) (continued) Contours of Constant Gain , 50 100 VCE = 10V 80 70 60 50 40 0 2 4 TO-92 SOT-23 150 100 50 0
Fairchild Semiconductor
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RF 107 transistor tc 144
Abstract: PN918 / MMBT918 PN918 MMBT918 C E C B TO-92 E SOT-23 Mark: 3B B NPN RF , on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation NPN RF Transistor , / MMBT918 NPN RF Transistor (continued) Typical Characteristics (continued) f T - GAIN , CURRENT (mA) Power Dissipation vs Ambient Temperature P D - POWER DISSIPATION (mW) 350 300 TO-92 250 200 150 100 50 0 0 25 50 75 100 125 150 SOT-23 TEMPERATURE ( ° C) PN918 / MMBT918 NPN Fairchild Semiconductor
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2N5455

Abstract: 40636 STI Type: 2N3389 Notes: Polarity: NPN Power Dissipation: .80 VCBO: 195 VCER: 160 ICBO: 140 , -39 Industry Type: 2N3389 STI Type: 2N3410 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 30 hFE min , -39: Industry Type: 2N3413 STI Type: 2N3411 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 30 hFE min , -78 Industry Type: 2N3411 STI Type: 2N3418 Notes: Polarity: NPN Power Dissipation: Tj: VCBO: VCEO: 60 , : 2N3418 STI Type: 2N3419 Notes: Polarity: NPN Power Dissipation: Tj: VCBO: VCEO: 80 hFE min: hFE
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2N3420 2N5455 40636 2SK960 2Sk955 2SK989 hfe max 200 2N5334 AD813 AD814 AD813DIE AD814DIE

CBVK741B019

Abstract: rf transistor mark code H1 MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN , , IC = 0 100 MPSH11 / MMBTH11 NPN RF Transistor nA ON CHARACTERISTICS hFE DC Current , 100 125 T A - AMBIENT TE MPE RATURE (°C) 300 TO-92 250 200 100 50 0 0 50 75 , = 25ºC 0.1 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 MPSH11 / MMBTH11 NPN RF , Admittance vs Collector Voltage 8 MPSH11 / MMBTH11 NPN RF Transistor 3 g ie 8 b ie 4 0
Fairchild Semiconductor
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rf transistor mark code H1 Q100 Z-235 D3000

transistor 26

Abstract: CBVK741B019 MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN , , IC = 0 100 MPSH11 / MMBTH11 NPN RF Transistor nA ON CHARACTERISTICS hFE DC Current , 100 125 T A - AMBIENT TE MPE RATURE (°C) 300 TO-92 250 200 100 50 0 0 50 75 , = 25ºC 0.1 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 MPSH11 / MMBTH11 NPN RF , Admittance vs Collector Voltage 8 MPSH11 / MMBTH11 NPN RF Transistor 3 g ie 8 b ie 4 0
Fairchild Semiconductor
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transistor 26

LM7805 TO92

Abstract: LM7805 footprint Regulator 5V TO220 LM7805 Q1 NPN NPN Bipolar Transistor TO-92 8050 Q2 NPN NPN Bipolar Transistor TO-92 8050 Q3 NPN NPN Bipolar Transistor TO-92 8050 Q4 NPN NPN Bipolar Transistor TO-92 8050 R1 Res Thermal Thermistor res0.4 Res Thermal
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HT13R90 IN4001 LM7805 TO92 LM7805 footprint 100-11 thermistor LM7805 TO92 PACKAGE diode 4001 IC LM7805 HA0148T 32768H IN4001C1 SYS/16 SYS/32

2N2222B

Abstract: 2N2244 LOW-POWER SILICON NPN Item Number Part Number Manufacturer Y(BR)CEO (V) hFE Ie Max A fT , 150 J 150 J 175 J TO-5 TO-205AD TO-18 TO-18 TO-92 TO-92 TO-92 TO-92 TO-226 TO-5 ar TO-92var SPAKvar SPAKvar SPAKvar TO-39 TO-39 TO-39 TO-92 TO-5 TO-5 TO-92 TO-92 TO-92 TO-92 TO-5 TO-236 SPAK TO-39 TO-92 TO-92 TO-92 TO-92 TO-5 TO-92 TO-39 TO-39 ZIP var TO-126var TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-18 TO-18 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
Space Power Electronics
Original
NB311E 2N1104 2N2222B 2N2244 NB011 Delco 2sc1571 2SCS02 BFY50 BFX50 NB311F NB311X

y 331 Transistor

Abstract: PN918 / MMBT918 PN918 MMBT918 C C B TO-92 E E SOT-23 Mark: 3B B NPN , 3-29 PN918 / MMBT918 NPN RF Transistor (continued) Electrical Characteristics Symbol , PN918 / MMBT918 NPN RF Transistor Typical Characteristics Typical Pulsed Current Gain vs Collector , VOLTAGE (V) 3-31 PN918 / MMBT918 NPN RF Transistor (continued) Typical Characteristics , (mW) 350 300 TO-92 250 200 150 100 50 0 0 25 50 75 100 125 150 SOT-23 TEMPERATURE ( ° C
Fairchild Semiconductor
Original
y 331 Transistor

TP3565

Abstract: pa6013 LOW-POWER SILICON NPN Item Number Part Number Manufacturer V(BR)CEO hFE Ie Max fT (Hz , 150 150 150 150 150 150 125 150 J J J J J J J J TO-92 TO-92 SOT-89 SOT-89 SOT-89 TO-92 TO-92 TO-5 TO-11Ovar TO-92 var TO-92 TO-98 TO-226 TO-92var TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-98 TO-98 TO-98 TO-92 TO-92 TO-98 TO-226 TO-106 TO-92 TO-226M TO-18 TO-5 TO-92var TO-92 TO-5 TO-92 Radial TO-236 TO-18 TO-92 TO-98 TO-92 TO-92 TO-92 TO-98 TO-92 TO-92 SPAKvar SPAKvar MicroTO-92 TO-106 TO-92 TO-92 TO
Short Form Catalog
Original
TP3565 2SC712 SK3038 pa6013 2N3399 2N3480 transitron E01702L JC500P MMBC1009F5 TEC9013H HSE130 2N4956

2N3406

Abstract: optron LOW-POWER SILICON NPN Item Number Part Number Manufacturer V(BR)CEO V} hFE Ie Max (A fT , J 1 175 J 175 J 175 J TO-92 TO-92 TO-18 TO-18 TO-92var TO-92var TO-92 TO-92 TO-92 TO-92 5 10 , 150 150 150 125 150 150 150 J J J J J J J J J TO-18 TO-236 TO-92 SPAKvar SPAKvar TO-222AB SOT-89 SOT-89 TO-92 SOT-89 TO-92 TO-92 MicroTO·92 SPAKvar TO-92 SPAKvar TO-92 TO-92var 1.5m 2.0m 2.0m 2.8m , =5"2·iiir TO-52var TO-226AA TO-18 TO-5 TO-226AA TO-18 TO-5 TO-92 TO-222AB TO-18 TO-236 TO-92 TO-92 TO-l06 TO
Short Form Catalog
Original
2SC631 2N3406 optron 2N3459 2sc711 BC109C MOTOROLA rca 40397 HSE415 2SC870 2SC538 2SC539 A5T3391 A5T3391A

MRF472

Abstract: MRF245 RF LOW-POWER SILICON NPN Item Number Part Number Manufacturer V(BR)CEO (V) fT (Hz) hFE , S 25n 35n 15n SOn TO-92 TO-18 TO-18 TO-92var SPAKvar SPAKvar TO-92 SPAKvar TO-92 TO-92 TO-92 TO-39 TO-39 TO-22SAA TO-22SAA TO-92 TO-92 TO-92 TO-92var TO-92var SOT-23 TO-92 ~~g j 175 J 150 J , -23var TO-92 TO-22SAA 25 25 25 25 25 25 25 25 2:' ~~~~~110 55 MMBTH10 PE210C PE210B BF311 MMBT6543 , J 150 S 125 J 150 J 150 J ~gf.~~AA SOT-23 TO-92 TO-92 TO-92 SOT-89 Macro-X TO-92 TO-92 ~~g
Short Form Catalog
Original
ZTX114 MRF243 MRF245 MRF250 MRF304 MRF313A MRF472 MPSA13K MRF420 MPS6579 BSW43 BSX52 MMBT4124 KT379B 2SC137

rca 2n2147

Abstract: 2N2207 LOW-POWER SILICON NPN Item Number Part Number Manufacturer V(BR)CEO hFE Ie Max A fT (Hz , ·92var TO·92 N/A TO·5 TO·5 TO·5 TO·226M TO·92 TO·92 TO·18 TO·18 TO·18 TO·92 TO·92var TO·92var TO·18 TO·92 SOT·23 SOT·23 SOT·23 TO· 106 TO·l05 TO·92 TO·71 TO·71 2.4m 2.4m 2.4m 4.0m 4.8m 4.8m 3.3m 1.8m 1.8m , ·23 TO·92var TO·92var TO·92var ar TO·92 TO·92 TO·l05 TO·39 TO·39 TO·39 TO·l06 TO·108 TO·l08 TO·92 TO·92 TO·92 TO·92 TO·92 TO·92var TO·92var TO·92var TO·228 TO·98 TO·228 TO·92var TO·205AO TO·39 TO·48 TO
Space Power Electronics
Original
BCY89 BC340 BFY12 rca 2n2147 2N2207 2n2183 rca 2N2161 2N2214 2N2222A motorola BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192

2N3609

Abstract: 2N3633 LOW-POWER SILICON NPN Item Number Part Number Manufacturer V(BR)CEO hFE Ie Max A fT (Hz , S 175 J 175 J 175 J 175 J 150 S 150 J TO·92 TO·92 TO·92 TO·92 TO·5 TO·18 TO·5 TO·5 TO·77 TO·5 TO·5 TO·92 TO·92 TO·5 T0-5 TO·46 N/A TO·5 TO·5 TO·18 TO·5 TO·5 TO·18 TO·5 SOT·89 TO·236 TO·92 TO·92 SOT·89 SOT·23 TO·226AA TO·92 TO·5 TO·92 TO·92 Macro·T TO·l05 TO·l05 T0-39 TO·39 TO·5 TO·5 TO·5 TO·226AA TO·5 TO·92 TO·18 TO·205AO TO·39 TO·5 TO·39 TO·39 TO·39 TO·5 TO·52var 125 J 125 J 150 J 150 J 150 J 150 J
Space Power Electronics
Original
2SC1330 2N3609 2N3633 2N3520 2N3618 motorola MOTOROLA 2N3583 RN5816 RN5B16 RN5818 HSE125 HSE210 HSE171

transistor C 245 b

Abstract: MPSH11 / MMBTH11 MPSH11 MMBTH11 C C B TO-92 E E SOT-23 Mark: 3G B NPN , 3-288 MPSH11 / MMBTH11 NPN RF Transistor Electrical Characteristics Symbol Parameter , 0.1 1 10 I C - COLLECTOR CURRENT (mA) 20 30 3-289 MPSH11 / MMBTH11 NPN RF Transistor , DISSIPATION (mW) 350 300 10 VCB = 30V 1 TO-92 250 200 150 100 50 0 0 25 50 75 100 125 150 SOT , / MMBTH11 NPN RF Transistor Common Emitter Y Parameters Input Admittance vs Collector Current 14 12 10
Fairchild Semiconductor
Original
transistor C 245 b

BC547BP

Abstract: tbc547b RF LOW-POWER SILICON NPN Item Number Part Number Manufacturer Y(BR)CEO (V) fT (Hz) hFE , J J J J J J J J TO-106 TO-92 SPAKvar TO-236 TO-92 SIP N/A N/A N/A .wOm TO-106 1:;,n , J 150 150 150 150 J J J J TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-92 TO-92 TO-92 TO-92 TO-92 SPAKvar TO-236 TO-236 TO-236 TO-236 TO-98var T0-92 TO-98var TO-92 TO-92 TO-92 TO-92 TO-92 , -92var TO-92var TO-226M TO-226M TO-92var TO-92var TO-92var TO-92 1.:Q-92 TO-92var V(BR)CEO 75 MRF430
Advanced Semiconductor
Original
BC407A BC547AP BC147B BC407B BC547BP BC550BP tbc547b BC547A BC847AR TBC547A BCW47B

PN2222A MOTOROLA

Abstract: valvo LOW-POWER SILICON NPN Item Number Part Number Manufacturer V(BR)CEO hFE Ie Max A fT (Hz , S 175 J 175 J 175 J 175 J 150 S 150 J TO·92 TO·92 TO·92 TO·92 TO·5 TO·18 TO·5 TO·5 TO·77 TO·5 TO·5 TO·92 TO·92 TO·5 T0-5 TO·46 N/A TO·5 TO·5 TO·18 TO·5 TO·5 TO·18 TO·5 SOT·89 TO·236 TO·92 TO·92 SOT·89 SOT·23 TO·226AA TO·92 TO·5 TO·92 TO·92 Macro·T TO·l05 TO·l05 T0-39 TO·39 TO·5 TO·5 TO·5 TO·226AA TO·5 TO·92 TO·18 TO·205AO TO·39 TO·5 TO·39 TO·39 TO·39 TO·5 TO·52var 125 J 125 J 150 J 150 J 150 J 150 J
Short Form Catalog
Original
2N2909 KT503A 2N709A PN2222A MOTOROLA valvo emihus philco-ford DIODE 6AA 2N2480 2N2479 2N4237 BFR52 UPT111 2N2868

in1004

Abstract: in1004 diode Typical INFRARED GaAs LED LED LED P1 LM7805 Regulator 5V TO220 LM7805 Q1 NPN NPN Bipolar Transistor TO-92 8050 Q2 NPN NPN Bipolar Transistor TO-92 8050 Q3 NPN NPN Bipolar Transistor TO-92 8050 Q4 NPN NPN Bipolar Transistor TO-92 8050
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Original
in1004 in1004 diode diodes IN4001 IC LM7805 OF BLOCK diagram IN4001 diode 5V power supply using LM7805 and bridge rectifier HA0148E CAPNP200 CAP100
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