NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SAA4849PS R647 1k PCF8598CP PCF8598CP IC6 5 C29 47p C28 TR420 W10 BC547A BC547A BC558B BC558B BC547A BC547A ... | Original |
66 pages, |
FC260 universal smps diagrams "tr2 9335" philips 38041 TEA1507 RLP-70 crt monitor PCB LAYOUT SFR16t 2322 194 13101 SAA4848 crt monitor block diagram AT2097 crt monitor circuit diagram SAA4848/SAA4849 AN10280 SAA4848/SAA4849 abstract |
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| Abstract: EN 50022 lub na plycie. Do gniazd oferowane s plytki do opisu GZT4-0035 GZT4-0035 oraz obejmy TR4-2000. GZM2/3/4: tak GZT2/3/4: nie TR4-2000 GZT4-0035 GZT4-0035 Uwaga: gniazda GZM4 dostpne s w kolorze ... | Original |
4 pages, |
datasheet abstract |
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| Abstract: (80) mm Four poles 6 A, 300 V G4 1052 TR4-2000 GZT4-0035 GZT4-0035 Accessories GZM4 , 1052 TR4-2000 GZT4-0035 GZT4-0035 Accessories GZ4 Connections diagram GZT4-0040 GZT4-0040 Module , relays T-R4: TR4-2000, GZT4-0035 GZT4-0035 Export Sales Department phone +48 68 47 90 838 · Marketing Department ... | Original |
10 pages, |
RM85 RM84 PZ11 PW80 GZT80 GZ14 EC50 gzt92 35 15 rail en 50022 RM87L RM87P GZT80 abstract |
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| Abstract: x 42,5(80) mm Cztery tory prdowe 6 A, 300 V G4 1052 TR4-2000 GZT4-0035 GZT4-0035 Akcesoria , G4 1052 TR4-2000 GZT4-0035 GZT4-0035 Akcesoria GZT4-0040 GZT4-0040 Schemat polcze GZ4 Modul typu , przekaników T-R4: TR4-2000, GZT4-0035 GZT4-0035 Dzia³ Marketingu tel./fax 068 47 90 830 · Linia Doradztwa ... | Original |
10 pages, |
RM85 RM84 PW80 GZT80 en 50022 EC50 R2M 34 dwa 105 str wg 252 RM87L RM87P GZT80 abstract |
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| Abstract: sockets are offered description plates GZT4-0035 GZT4-0035 and clips TR4-2000. GZM2/3/4: yes GZT2/3/4: no TR4-2000 GZT4-0035 GZT4-0035 Note: sockets GZM4 are available in black and gray colors. Ordering codes ... | Original |
4 pages, |
datasheet abstract |
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| Abstract: SPICE PARAMETER 2SC5866 2SC5866 by ROHM TR Div. * Q2SC5866 Q2SC5866 NPN BJT model * Date: 2006/11/13 .MODEL Q2SC5866 Q2SC5866 NPN + IS=270.00E-15 00E-15 + BF=230.08 + VAF=100 + IKF=3.6536 + ISE=270.00E-15 00E-15 + NE=1.4864 + BR=7.8806 + VAR=100 + IKR=.34994 + ISC=7.6008E-12 6008E-12 + NC=1.4061 + NK=.76747 + RE=75.000E-3 000E-3 + RB=.31438 + RC=18.568E-3 568E-3 + CJE=280.43E-12 43E-12 + MJE=.45944 + CJC=38.343E-12 343E-12 + MJC=.50476 + TF=607.77E-12 77E-12 + XTF=121.43 + VTF=162.23 + ITF=51.350 + TR=42.092E-9 + XTB=1.5000 ... | Original |
1 pages, |
6008E-12 2SC5866 Q2SC5866 00E-15 000E-3 568E-3 43E-12 343E-12 77E-12 092E-9 2SC5866 abstract |
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| Abstract: SPICE PARAMETER 2SC5880 2SC5880 by ROHM TR Div. * Q2SC5880 Q2SC5880 NPN BJT model * Date: 2006/11/13 .MODEL Q2SC5880 Q2SC5880 NPN + IS=270.00E-15 00E-15 + BF=230.08 + VAF=100 + IKF=3.6536 + ISE=270.00E-15 00E-15 + NE=1.4864 + BR=7.8806 + VAR=100 + IKR=.34994 + ISC=7.6008E-12 6008E-12 + NC=1.4061 + NK=.76747 + RE=75.000E-3 000E-3 + RB=.31438 + RC=18.568E-3 568E-3 + CJE=280.43E-12 43E-12 + MJE=.45944 + CJC=38.343E-12 343E-12 + MJC=.50476 + TF=607.77E-12 77E-12 + XTF=121.43 + VTF=162.23 + ITF=51.350 + TR=42.092E-9 + XTB=1.5000 ... | Original |
1 pages, |
6008E-12 2SC5880 Q2SC5880 00E-15 000E-3 568E-3 43E-12 343E-12 77E-12 092E-9 2SC5880 abstract |
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| Abstract: CET3055L CET3055L March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 60V, 3.7A, Rds(on)=100itiQ @Vgs=10V. RDS(on)=120mQ @Vgs=4.5V. • High dense cell design for low Rds(on). • Rugged and reliable. • SOT-223 Package. G o sot-223 sot-223 (j23z) ABSOLUTE MAXIMUM RATINGS 0^=25^ unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Vds 60 V Gate-Source Voltage vgs ±20 V Drain Current-Continuous3 @Tj=125°C Id ±3.7 a -Pulsedb idm ±25 a Drain-Source Diode ... | OCR Scan |
5 pages, |
CET3055L CET3055L abstract |
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| Abstract: J SA\YO F S T K 7 9 9 0 1 Thick Film Hybrid IC CRT Display Use Case Outline : 27 pins (See attached case outline drawing.) Functions : Deflection signal processing, vertical deflection power amp, horizontal deflection power amp Use: CRT display use Absolute Maximum Ratings (Vertical Output Section) 30 unit Maximum Supply Voltage VCC6 Pin 6 V Maximum Deflection Current Ip-o Pin 3 ±1.3 A Maximum Output Current io Pin 2 ±0.5 A Thermal Resistance ej-ci IC 2 13 °CAV 6j-c2 Tr3, Tr4 20 ... | OCR Scan |
3 pages, |
STK79901 2A36 datasheet abstract |
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| Abstract: Standard Power MOSFETs- RFK30N12 RFK30N12, RFK30N15 RFK30N15 Fite Number 1455 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 30 A, 120 V - 150 V rDs(on)=0.075 Q Features: â- SO A is power-dissipation limited m Nanosecond switching speeds â- Linear transfer characteristics m High input impedance â- Majority carrier device TERMINAL DIAGRAM D 9ZCS-337 9ZCS-337*1 N-CHANNEL ENHANCEMENT MODE The RFK30N12 RFK30N12 and RFK30N15 RFK30N15* are n-channel enhancement-mode silicon-gate power field ... | OCR Scan |
4 pages, |
RFK30N15 RFK30N12 RFK30N12 abstract |
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| Abstract: ATP203 ATP203 No. N A 1 3 1 8 N ATP203 ATP203 N MOS 4.5V Absolute Maximum Ratings / Ta=25 unit (DC VDSS VGSS ID (PW 10s IDP PW 10s, duty cycle 1% Tc=25 PD Tch Tstg ( )*1 EAS IAV 52 mJ 38 A *2 30 V ± 20 V 75 A 225 A 50 W 150 - 55 150 *1. VDD=10V, L=50H, IAV=38A *2. L 50H, 1 Electrical Characteristics / Ta=25 ATP ... | Original |
4 pages, |
ATPAK A1318 ATP203 ATP203 abstract |
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| Abstract: fftAtti m » oca « Jj££ STK79905B STK79905B 1. mm :27fy 2. $ fife : fiiajft^Ma, uiiiifiRiS^^ia 3. ffl : CRT Display ffl 4. ft ' g : 5. 5£ir 0 m P m ® RìtB « - nViKikunffinrnmu an a t •> ... | OCR Scan |
9 pages, |
LA7851 STK79905B STK79905 STK79905B abstract |
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| Abstract: 2SK1969-01 2SK1969-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES â- Features • Hig i current • Low on-resistance • No secondary breakdown • Lov driving power • Hig i forward Transconductance • Avalanche-proof • Including G-S Zenner diode â- Applications • Mo :or controllers • Gereral purpose power amplifier • DC- DC converters â- Max. Ratings and Characteristics •Absolute Maximum Ratings(Tc = 25°C) (unless otherwise specified) Outline Drawings 15.5m« 03.2±O.l 5±0'£ ... | OCR Scan |
4 pages, |
SC-65 ZENNER A2 2SK1969-01 A2306 A2305 2SK1969-01 abstract |
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| Abstract: DATA SHEET MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS (Unit : mm) 2.8 + 0.2 1.5 0.65îg;î5 1z Marking 1 . Source 2. Gate 3. Drain Drain(D) o' Q MARK : H14 Gate(G) u Ã' Source(S) (Diode in the figure is the parasitic diode.) The 2SJ203 2SJ203 is a P-channel vertical type MOS FET which can be driven by a 2.5 V power supply. As the MOS FET is driven by low voltage and does not require consideration of driving current, it is suitable for appliances incl ... | OCR Scan |
8 pages, |
T400 T200 2SJ203 datasheet abstract |
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| Abstract: 7s-? • 2/- h mos MOS Field Effect Transistor 2SJ206 2SJ206 mos fet 2SJ206 2SJ206ÃœPf-r^;HtiiMOS FETT',5 i è >f -/ f- > rXi-T'to ^MOS FET ¡if£i®)±T"lg®T"è, i^Fy-i V^Hlx VTR ^tVXfViii:«0* o5 VICA* ijÃœHSKift?è ito o®* viSSi-Ct. RDS(„„) = 4.0 Q MAX. @VGS = - 4.0 V, ID=-0.3A RDS(o„) = 3.0Q MAX. @VGS=-10V, ID -0.3 A (Ta = 25°C : mm) 4.5 ±0.1 1.6 ±0.2 1142 tut 1.5 â- 10.47 "•±0.« 3.0 -0.42 ±0.06 fW/ (D) Q r- h (G) o- r- htì» ^ R ÃŒ 1*1 n|5 1.5±0.1 r y-x(s) 1. y-x(s) 2. KlXXD) 3. r- ... | OCR Scan |
6 pages, |
ITT DIODE W7 pt ITT DIODE W7 A305 2SJ206 NEC-MH 2SJ206 abstract |
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| Abstract: FDS9933 FDS9933 Dual P-Channel 2.5V Specified PowerTrench® MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V  12V). · Â5 A, Â20 V, Applications · Low gate charge · · High performance trench technology for extremely low RDS(ON) · Extended VGSS range (±12V) for battery applications ... | Original |
5 pages, |
FDS9933 9933 b 9933 mosfet FDS9933 abstract |
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| Abstract: 19-2321; Rev 1; 8/02 �kV ESD-Protected USB Level Transceivers in UCSP with USB Detect Applications Features o o o o o o o o o o o o o o �kV ESD Protection On D+ and DComply with USB Standard 1.1 (Full Speed 2.0) USB Skew Independent of Input Skew Separate VP and VM Inputs/Outputs VL Down to 1.8V Allows Connection with LowVoltage ASICs Re-Enumerate with Power Applied USB Detect Function 3.7V (min) to 4V (max)-MAX3341E -MAX3341E 1V (min) to 2.8V (max)-MAX3342E -MAX3342E Allow Sing ... | Original |
15 pages, |
MAX3342E MAX3341E IEC1000-4-2 MAX3341E/MAX3342E MAX3341E/MAX3342E abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| .4 TF=2.10E-08 10E-08 10E-08 10E-08 + ITF=5 VTF=5 XTF=7 RE=0.08 TR=4.20E-06) * Motorola .model TIP41A TIP41A TIP41A TIP41A npn ( IS=3 www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/vendor list/simetrix/bjtpwr.lb |
Spice Models | 29/07/2012 | 10.31 Kb | LB | bjtpwr.lb |
| *$ model description: "awb2n1613" *b Device model created by analog_uprev for 2n1613 on Fri Feb 2 18:03:16 IST 2001 .subckt awb2n1613 C B E + params: + IC_VBE=1.10250E-36 10250E-36 10250E-36 10250E-36 + IC_VCE=1.10250E-36 10250E-36 10250E-36 10250E-36 + STATE=1 + TEMP=0 + AREA=1 + STATE_FACTOR=0 + IS=3.567E-14 567E-14 567E-14 567E-14 + BF=9.684E+01 + NF=1.000E+00 + VAF=2.150E+02 + IKF=1.000E+01 + ISE=5.191E-15 191E-15 191E-15 191E-15 + NE=1.160E+00 + BR=1.236E+01 + NR=1.000E+00 + VAR=3.923E+01 + IKR=1.474E-01 474E-01 474E-01 474E-01 + ISC=6.614E-13 614E-13 614E-13 614E-13 + NC=1.256E+00 + RB=0.000E+00 + IRB=9.463E-04 463E-04 463E-04 463E-04 + RE= www.datasheetarchive.com/files/spicemodels/misc/bjn.lib |
Spice Models | 18/06/2008 | 1165.77 Kb | LIB | bjn.lib |
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