TR350MTM TR350M TR-70TM MIL-STD-883E OS4000 C450TR3547-S7000 C450TR3547-0213

CxxxTR3547-Sxx00 Data Sheet Cree's TR350M LEDs are the next generation of solid-state LED emitters that combine highly efficient

TR350MTM TR350MTM LEDs CxxxTR3547-Sxx00 Data Sheet Cree's TR350M TR350M LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree's proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting and general-illumination markets. The TR350M TR350M LEDs are among the brightest in the top-view market while delivering a low forward voltage, resulting in a very bright and highly efficient solution. The metal backside allows for eutectic die attach and enables superior performance from improved thermal management. The design is optimally suited for industry-standard top-view packages. FEATURES APPLICATIONS · · Rectangular LED RF Performance 450 & 460 nm TR-70TM TR-70TM - 70 mW min · Large LCD Backlighting Television · High Reliability - Eutectic, Solder Paste or Preforms General Illumination · Medium LCD Backlighting Attach Portable PCs Monitors · Low Forward Voltage - 3.4 Vf Typical at 50 mA · Maximum DC Forward Current 150 mA · LED Video Displays · 1000-V ESD Threshold Rating · White LEDs · InGaN Junction on Thermally Conductive SiC Substrate CxxxTR3547-Sxx00 Chip Diagram Bottom View .CPR3EG Rev Data Sheet: Top View Die Cross Section Cathode (-) 98 m Bottom Surface 200 x 320 m TR350M TR350M LED 350 x 470 m Metal Backside 160 x 280 m Anode (+) 90 m diameter Subject to change without notice. www.cree.com t = 155 m 1 Maximum Ratings at TA = 25°C Notes 1&3 CxxxTR3547-Sxx00 DC Forward Current 150 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 200 mA LED Junction Temperature 150°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C Storage Temperature Range Electrostatic Discharge Threshold (HBM) -40°C to +100°C 1000 V Note 2 Electrostatic Discharge Classification (MIL-STD-883E MIL-STD-883E) Class 2 Note 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 50 mA Part Number Forward Voltage (Vf, V) Note 3 Reverse Current [I(Vr=5V), A] Full Width Half Max (D, nm) Min. Typ. Max. Max. Typ. C450TR3547-Sxx00 2.7 3.4 3.7 2 20 C460TR3547-Sxx00 2.7 3.4 3.7 2 21 Mechanical Specifications Description CxxxTR3547-Sxx00 Dimension Tolerance P-N Junction Area (m) 310 x 430 ±35 Chip Area (m) 350 x 470 ±35 155 ±15 Au Bond Pad Diameter Anode (m) 90 -5, +15 Au Bond Pad Thicknesses (m) 1.0 ±0.5 98 x 98 -5, +15 Bottom Area (m) 200 x 320 ±35 Bottom Contact Metal (m) 160 x 280 ±25 3.0 ±1.0 Chip Thickness (m) Au Bond Pad Area Cathode (m) Bottom Contact Metal Thickness (m) Notes: 1. Maximum ratings are package-dependent. The above ratings were determined using a Cree 5 mm x 5 mm SMT package (with silicone encapsulation and intrinsic AuSn metal die attach) for characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). 2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. 3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 50 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 OS4000 epoxy encapsulant and intrinsic AuSn metal die attach). Optical characteristics measured in an integrating sphere using Illuminance E. Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR, TR70 and TR350M TR350M are trademarks of Cree, Inc. 2 CPR3EG Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxTR3547-Sxx00 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxTR3547-Sxxxx) orders may be filled with any or all bins (CxxxTR3547-xxxx) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 50 mA. Radiant Flux (mW) C450TR3547-S7000 C450TR3547-S7000 C450TR3547-0213 C450TR3547-0213 C450TR3547-0214 C450TR3547-0214 C450TR3547-0215 C450TR3547-0215 C450TR3547-0216 C450TR3547-0216 C450TR3547-0209 C450TR3547-0209 C450TR3547-0210 C450TR3547-0210 C450TR3547-0211 C450TR3547-0211 C450TR3547-0212 C450TR3547-0212 C450TR3547-0205 C450TR3547-0205 C450TR3547-0206 C450TR3547-0206 C450TR3547-0207 C450TR3547-0207 C450TR3547-0208 C450TR3547-0208 C450TR3547-0201 C450TR3547-0201 C450TR3547-0202 C450TR3547-0202 C450TR3547-0203 C450TR3547-0203 C450TR3547-0204 C450TR3547-0204 88 82 76 70 445 447.5 450 Dominant Wavelength (nm) 452.5 455 Radiant Flux (mW) C460TR3547-S7000 C460TR3547-S7000 C460TR3547-0213 C460TR3547-0213 C460TR3547-0214 C460TR3547-0214 C460TR3547-0215 C460TR3547-0215 C460TR3547-0216 C460TR3547-0216 C460TR3547-0209 C460TR3547-0209 C460TR3547-0210 C460TR3547-0210 C460TR3547-0211 C460TR3547-0211 C460TR3547-0212 C460TR3547-0212 C460TR3547-0205 C460TR3547-0205 C460TR3547-0206 C460TR3547-0206 C460TR3547-0207 C460TR3547-0207 C460TR3547-0208 C460TR3547-0208 C460TR3547-0201 C460TR3547-0201 C460TR3547-0202 C460TR3547-0202 C460TR3547-0203 C460TR3547-0203 C460TR3547-0204 C460TR3547-0204 88 82 76 70 455 457.5 460 462.5 465 Dominant Wavelength (nm) Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR, TR70 and TR350M TR350M are trademarks of Cree, Inc. 3 CPR3EG Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Relative Light Inten Characteristic Curves 300% 250% 200% 150% 100% 50% 0% 0 50 100 150 200 These are representative measurements for the TR LED product. Actual curves will vary slightly for the various radiant If (mA) flux and dominant wavelength bins. Wavelength Shift vs. Forward Current If (mA) 150 100 50 0 0 1 2 3 4 5 Dominant Wavelength Shift (nm) Forward Current vs. Forward Voltage 200 2 1 0 -1 -2 0 Vf (V) 100 150 200 If (mA) Relative Intensity vs. Forward Current 120 400% 350% Relative Intensity (%) Relative Light Intensity 50 300% 250% 200% 150% 100% 50% Relative Intensity vs Peak Wavelength 100 80 60 40 20 0 0% 0 50 100 150 200 If (mA) 320 420 520 620 Wavelength (nm) Dominant Wavelength Shift (nm) Wavelength Shift vs. Forward Current 2 1 0 -1 -2 0 50 100 150 200 If (mA) Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR, TR70 and TR350M TR350M are trademarks of Cree, Inc. 4 CPR3EG Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Radiation Pattern This is a representative radiation pattern for the TR LED product. Actual patterns will vary slightly for each chip. Copyright © 2009, Cree, Inc. Confidential pg. 1 Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR, TR70 and TR350M TR350M are trademarks of Cree, Inc. 5 CPR3EG Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com