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Part : TPCS8102(T2LSIEM) Supplier : Toshiba Manufacturer : America II Electronics Stock : 2,860 Best Price : - Price Each : -
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TPCS8104 Datasheet

Part Manufacturer Description PDF Type
TPCS8104 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original
TPCS8104 Toshiba power MOSFET Original

TPCS8104

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: TPCS8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8104 , TPCS8104 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note , respectively.) 2 2002-04-05 TPCS8104 Electrical Characteristics (Ta = 25°C) Characteristics Gate , TPCS8104 ID ­ VDS -10 -10 -5 -3 -4 -2.5 -2.4 -2.3 -6 -2.2 -4 -2.1 -2 VGS = -2 V Common source Ta = 25 , ) Drain current ID (A) 4 2002-04-05 TPCS8104 RDS (ON) ­ Ta 25 Common source 20 ID = Toshiba
Original
Abstract: TPCS8104 PMOS (U-MOS IV) TPCS8104 2 PC · : mm · · : |Yfs , 4 1 2009-09-29 TPCS8104 (t = 10 s) ( 2a) Rth (ch-a , 2002/95/EC) 2 2009-09-29 TPCS8104 (Ta = 25 , 3 2009-09-29 TPCS8104 ID ­ VDS -3 -5 -2.5 -4 Ta = 25°C -2.4 (A , -100 ID (A) 2009-09-29 TPCS8104 RDS (ON) ­ Ta IDR ­ VDS -100 25 IDR (A) ID -
Original
S8104
Abstract: TPCS8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8104 , electrostatic-sensitive device. Please handle with caution. 1 2006-11-16 TPCS8104 Thermal Characteristics , ) 2 2006-11-16 TPCS8104 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , VDSF IDR = -11 A, VGS = 0 V 3 2006-11-16 TPCS8104 ID ­ VDS -10 -3 -5 -2.5 , -3 -5 -10 -30 -50 Drain current ID (A) 4 2006-11-16 TPCS8104 RDS (ON) ­ Ta Toshiba
Original
2B1002
Abstract: TPCS8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8104 , TPCS8104 Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel , ) Year of manufacture (One low-order digits of calendar year) 2 2003-02-20 TPCS8104 , A ¾ ¾ 1.2 V VDSF IDR = -11 A, VGS = 0 V 3 2003-02-20 TPCS8104 ID ­ , -5 ID -10 -30 -50 (A) 2003-02-20 TPCS8104 RDS (ON) ­ Ta IDR ­ VDS -100 Toshiba
Original
Abstract: TPCS8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8104 , is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-06 TPCS8104 , manufacture (The last digit of a year) 2 2004-07-06 TPCS8104 Electrical Characteristics (Ta = 25 , -44 A 1.2 V VDSF IDR = -11 A, VGS = 0 V 3 2004-07-06 TPCS8104 ID ­ , -30 -50 ID (A) 2004-07-06 TPCS8104 RDS (ON) ­ Ta IDR ­ VDS -100 25 Common source Toshiba
Original
Abstract: TPCS8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8104 , handle with caution. 1 2 3 4 1 2006-11-16 TPCS8104 Thermal Characteristics , ) Year of manufacture (The last digit of a year) 2 2006-11-16 TPCS8104 Electrical , Typ. Max -44 1.2 Unit A V 3 2006-11-16 TPCS8104 ID ­ VDS -10 -10 -5 -3 -4 -2.5 -2.4 , TPCS8104 RDS (ON) ­ Ta 25 Common source 20 ID = -11 A, -5.5 A, -2.5 A Pulse test -100 -10 IDR ­ VDS Toshiba
Original
Abstract: TPCS8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8104 , electrostatic-sensitive device. Please handle with caution. 1 2006-11-16 TPCS8104 Thermal Characteristics , ) 2 2006-11-16 TPCS8104 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , VDSF IDR = -11 A, VGS = 0 V 3 2006-11-16 TPCS8104 ID ­ VDS -10 -8 -10 -3 , TPCS8104 RDS (ON) ­ Ta IDR ­ VDS -100 25 Common source IDR (A) 15 VGS = -4.5 V 10 ID = Toshiba
Original
Abstract: TPCS8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8104 , electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 TPCS8104 Thermal Characteristics , electronic equipment. 2 2009-09-29 TPCS8104 Electrical Characteristics (Ta = 25 , A 1.2 V VDSF IDR = -11 A, VGS = 0 V 3 2009-09-29 TPCS8104 ID ­ VDS , 2009-09-29 TPCS8104 RDS (ON) ­ Ta IDR ­ VDS -100 25 Common source (A) Drain reverse Toshiba
Original
Abstract: -30 -30 -13 -30 -30 -20 TPC8109 TPC8108 TPC8107 TPC8111 TPCS8104 TPCS8302 ID (A Toshiba
Original
TPC8014 TPC8208 TPC8207 TPC8209 TPC8210 TPCS8209 tpc8107 mosfet Battery Managements TPCS8210 TPC8111 equivalent
Abstract: Pch Maximum VDSS(V) TPCS8104 -30 TPCS8105 -30 TPCS8303 -20 TPCS8302 -20 TPC8109 -30 Toshiba
Original
tpc8118 oks2c- SVI 2004 A toshiba f5d tpc8026 oks2c TPCT4201 TPCT4202 TPCT4203 TPCT4204 TPCM8001-H TPCM8003-H
Abstract: ) Applications Li-ion & Li Polymer Battery Power Management Line Up Maximu m VDSS(V) TPCS8104 -30 Toshiba
Original
SVI 2004 TPC8028 tpc8117 IC SEM 2004 toshiba smd marking SVI 2004 C
Abstract: (0.01) P TPCS8104 (0.012) P TPCS8105 (0.0135) 2SJ380 (0.21) N[TPC8015-H (0.008)] NTPC8003 (0.007 , 6.8 TPCS8104 -30 -11 12 18 TPCS8105 -30 -11 13.2 19.5 , TPCS8104 -30 -11 TPCS8105 -30 TPCS8302 -20 TPCS8303 -20 -5 Power management -
Original
2SK2013 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313
Abstract: (0.01) P TPCS8104 (0.012) P TPCS8105 (0.0135) 2SJ380 (0.21) N[TPC8015-H (0.008)] NTPC8003 (0.007 , 6.8 TPCS8104 -30 -11 12 18 TPCS8105 -30 -11 13.2 19.5 -
Original
2sk3625 2SK3566 equivalent NTPCA8008-H 2SK3868 2sj618 MOSFET TOSHIBA 2SK2917 2SJ338 2SK2162 2SJ360 2SJ507 2SK2964 2SJ511
Abstract: 03.05.2007 13:53:30 Uhr 3 T SSOP-8 Part Number TPCS8007 TPCS8009-H TPCS8008-H TPCS8104 TPCS8105 Toshiba
Original
2sK2750 equivalent 4614 mosfet 2SK3567 equivalent 2SK3799 equivalent TPC8107 application circuit 2SK3561 equivalent POWERMOSFET07 TPC6004 TPC6003 TPC6005 TPC6006-H TPC6105
Abstract: ) TPC8111 (0.012) TPC8113 (0.01) TPCS8105 (0.0135) TPCS8104 (0.012) TPC8030 (0.0095) TPC8031-H (0.0133 , TPCS8104 ­30 ­11 12 18 - - 107 5710 U-MOSIV TPCS8105 ­30 ­11 13.5 Toshiba
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2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK941 equivalent tpca8023 BCE0017F E-28831 BCE0017G
Abstract: ) TPCS8104 (0.012) TPC8030 (0.0095) TPC8031-H (0.0133) TPCP8005-H (0.0133) 400 450 2SK3743 (0.4 , TPCS8008-H 250 1.7 580 - - - 10 600 -MOSV MACHII TPCS8104 ­30 ­11 Toshiba
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2SK3562 equivalent 2SK3568 equivalent 2SK3911 equivalent tpc8118 equivalent replacement 2SK1603 2SK3767 equivalent BCE0017E S-167
Abstract: (0.01) P TPCS8105(0.0135) P TPCS8104(0.012) 11 2SJ380(0.21) 12 N TPC8025(0.012) N TPC8020-H , TPCS8008-H 250 1.7 580 - - - 10 600 -MOSV MACHII TPCS8104 ­30 ­11 Toshiba
Original
2sk4110 2SK4106 2SK4111 2sk3797 equivalent 2SK2996 equivalent 2sK2961 equivalent BCE0017D
Abstract: TPCS8101 ­30 ­6 25 40 - - 37 1810 U-MOSII TPCS8104 ­30 ­11 12 Toshiba
Original
Power MOSFET, toshiba 438B TPCA8103 TPCP8402 TOSHIBA "ULTRA HIGH SPEED" DIODE 1A NPN S2e BCE0019A BCE0019B
Abstract: TPC6003 U-MOS III VS-6 30 6 0.024 P 13 TPCS8104 U-MOS IV TSSOP-8 - 30 - -
Original
MOSFET TOSHIBA 2SK transistor 2sk equivalent 2sk2698 mosfet MOSFET TOSHIBA 2Sj equivalent 2sk2837 mosfet toshiba POWER MOS FET 2sj 2sk
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