TPCA8A04-H 8A04-H - Datasheet Archive

 

TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A04-H High

 

TPCA8A04-H TPCA8A04-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A04-H TPCA8A04-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications 0.5 ± 0.1 Low forward voltage: VDSF = 0.6 V (Max) High-speed switching Small gate charge: QSW = 13.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 2.3 m (typ.) High forward transfer admittance: |Yfs| = 127 S (typ.) · Low leakage current: IDSS = 100 A (max) (VDS = 30 V) · Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA) 0.05 S S Absolute Maximum Ratings (Ta = 25°C) Characteristic 5.0 ± 0.2 1 Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 k) VDGR 30 V Gate-source voltage VGSS ±20 V (Note 1) ID 44 Pulsed (Note 1) IDP 132 PD 45 W PD 2.8 W PD 1.6 W EAS 252 mJ IAR 44 3.32 Tch 150 °C Storage temperature range Tstg -55 to 150 °C 4.25 ± 0.2 mJ Channel temperature 4 A EAR A 1.1 ± 0.2 · 0.595 4 3.5 ± 0.2 · 0.05 M A 5 1 0.6 ± 0.1 · 0.4 ± 0.1 0.15 ± 0.05 0.95 ± 0.05 · 1.27 0.166 ± 0.05 6.0 ± 0.3 Built-in a schottky barrier diode 8 5.0 ± 0.2 · Unit: mm DC Drain current Drain power dissipation (Tc=25) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25) (Note 4) A 5 0.8 ± 0.1 8 1,2,3 : SOURCE 4 : GATE 5,6,7,8 : DRAIN JEDEC JEITA TOSHIBA 2-5Q1A Weight: 0.069 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2008-08-21 TPCA8A04-H TPCA8A04-H Thermal Characteristics Characteristic Symbol Thermal resistance, channel to case (Tc=25) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Max Unit Rth (ch-c) 2.78 °C/W Rth (ch-a) 44.6 °C/W Rth (ch-a) 78.1 °C/W Marking (Note 5) TPCA 8A04-H 8A04-H Type Lot No. Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.1 mH, RG = 25 , IAR = 44 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2008-08-21 TPCA8A04-H TPCA8A04-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ±100 nA Drain cutoff current IDSS VDS = 30 V, VGS = 0 V 100 A V (BR) DSS ID = 10 mA, VGS = 0 V 30 V (BR) DSX ID = 10 mA, VGS = -20 V 15 VDS = 10 V, ID = 1 mA 1.3 2.3 VGS = 4.5 V, ID = 22 A 2.9 4.1 VGS = 10 V, ID = 22 A 2.3 3.2 VDS = 10 V, ID = 22 A 64 127 4400 5700 180 270 990 1.0 1.5 4.9 15 8.3 57 VDD 24 V, VGS = 10 V, ID = 44 A 59 VDD 24 V, VGS = 5 V, ID = 44 A 30 13 7.0 13.4 Drain-source breakdown voltage Gate threshold voltage Vth Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Gate resistance rg VDS = 10 V, VGS = 0 V, f = 5 MHz tr VGS Turn-on time ton Fall time tf Turn-off time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge 1 Qgd Gate switch charge VDD 15 V Duty 1%, tw = 10 s Qgs1 Gate-drain ("Miller") charge 0V 4.7 Switching time ID = 22 A VOUT 10 V RL = 0.68 Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz QSW VDD 24 V, VGS = 10 V, ID = 44 A V V m S pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Peak forward current Forward voltage (diode) Pulse Symbol (Note 1) Test Condition Min Typ. Max Unit IFP 132 A IDR = 1 A, VGS = 0 V - 0.4 - 0.6 V IDR = 44 A, VGS = 0 V - 1.2 V VDSF 3 2008-08-21 TPCA8A04-H TPCA8A04-H 8 6 ID ­ VDS 5 10 100 50 10 4.5 2.9 3.0 3.1 ID (A) 80 (A) 30 2.8 Drain current ID ID ­ VDS 5 4.5 3 40 Drain current 8 6 20 2.7 Common source Ta = 25°C Pulse test 10 2.9 60 2.8 40 2.7 Common source Ta = 25°C Pulse test 20 VGS = 2.5 V VGS = 2.5 V 0 0 0.2 0.4 0.6 Drain-source voltage 0.8 VDS 0 1 0 1 (V) 2 Drain-source voltage ID ­ VGS 50 3 4 VDS 5 (V) VDS ­ VGS 0.3 Common source Ta = 25°C Pulse test (V) Common source VDS = 10 V Pulse test VDS 30 Drain-source voltage Drain current ID (A) 40 20 Ta = -55°C 100 25 10 0 0 1 2 3 Gate-source voltage 4 VGS 0.2 ID = 44 A 0.1 22 11 0 0 5 2 (V) 4 Gate-source voltage Drain-source ON-resistance RDS (ON) (m) (S) |Yfs| Forward transfer admittance 10 Common source VDS = 10 V Pulse test 100 Ta = -55°C 10 100 25 1 0.1 0.1 1 Drain current 10 ID 8 VGS 10 (V) RDS (ON) - ID Yfs - ID 1000 6 Common source Ta = 25°C Pulse test 4.5 V VGS = 10 V 1 0.1 100 (A) 1 Drain current 4 10 ID 100 (A) 2008-08-21 TPCA8A04-H TPCA8A04-H RDS (ON) - Ta IDR - VDS 6 100 (A) ID = 11A,22A,44A 4 3 ID = 11A,22A,44A VGS = 4.5 V 2 1 VGS = 10 V 0 -80 -40 4.5 0 40 80 Ambient temperature 3 IDR 5 Drain reverse current Drain-source ON-resistance RDS (ON) (m) Common source Pulse test 10 120 Ta 10 Ta = 25°C Pulse test -0.2 0 (°C) -0.4 Capacitance - VDS -0.8 VDS (V) 80 120 -1.0 Vth - Ta 2.5 1000 Vth (V) Ciss Gate threshold voltage Coss C (pF) -0.6 Drain-source voltage 10000 Capacitance VGS = 0 V Common source 1 160 1 Crss 100 Common source VGS = 0 V f = 1 MHz Ta = 25°C 10 0.1 10 1 Drain-source voltage 1.5 1.0 0.5 Common source VDS = 10 V ID = 1 mA Pulse test 0 -80 100 VDS 2.0 -40 0 40 Ambient temperature (V) Ta 160 (°C) Dynamic input/output characteristics 16 VGS 40 20 30 12 VDD = 6 V VDS 24 20 12 8 10 0 0 4 20 40 Total gate charge 60 Qg 80 Gate-source voltage Drain-source voltage VDS (V) Common source ID = 44 A Ta = 25°C Pulse test (V) 50 0 100 (nC) 5 2008-08-21 TPCA8A04-H TPCA8A04-H rth ­ tw Transient thermal impedance rth (/W) 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Tc = 25 100 (2) (1) 10 (3) 1 0.1 Single - pulse 0.01 0.0001 0.001 0.01 0.1 1 Pulse width tw 10 100 (s) PD ­ Ta (W) PD (1) 2.5 t = 10s 2.0 1.5 Drain power dissipation Drain power dissipation PD ­ Tc 50 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) PD (W) 3.0 (2) 1.0 0.5 0 0 40 1000 120 80 Ambient temperature Ta 40 30 20 10 0 0 160 (°C) 40 120 80 Case temperature Tc 160 (°C) Safe operating area 1000 t =1 ms * Drain current ID (A) ID max (Pulse) * 100 t =10 ms * 10 1 Single-pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 Drain-source voltage VDSS max 10 VDS 100 (V) 6 2008-08-21 TPCA8A04-H TPCA8A04-H IDSS ­ Tch IDR ­ VDSF 100000 IDSS Drain cutoff current Drain reverse current 125 10 75 Ta = 25°C 1 0 0.2 0.4 0.6 Drain-source voltage 0.8 VDSF (V) Pulse test 10 20 10000 VDS = 30 V 5 1000 100 10 0 1 (typ.) VGS = 0 V (A) Pulse test VGS = 0 V IDR (A) 100 40 80 Channel temperature 120 Tch 160 (°C) Tch ­ VDS Channel temperature Tch (°C) 160 Pulse test VGS = 0 V 140 120 100 80 60 40 20 0 0 10 20 Drain-source voltage 30 VDS 40 (V) 7 2008-08-21 TPCA8A04-H TPCA8A04-H RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. · This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. · Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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