TP2535 TP2540 -350V TP2535N3 -400V TP2540N3 TP2540N8 TP2540ND TP2535/TP2540

TP2540 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS

TP2535 TP2535 TP2540 TP2540 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS(ON) (max) VGS(th) (max) ID(ON) (min) TO-92 TO-243AA* Die -350V -350V 25 -2.4V -0.4A TP2535N3 TP2535N3 - - -400V -400V 25 -2.4V -0.4A TP2540N3 TP2540N3 TP2540N8 TP2540N8 TP2540ND TP2540ND 7 * Same as SOT-89. Product supplied on 2000 piece carrier tape reels. MIL visual screening available. Product marking for TO-243AA Features TP5D* Low threshold - -2.4V max. Where *=2-week alpha date code High input impedance Low input capacitance - 125pF max. Fast switching speeds Low Threshold DMOS Technology Low on resistance These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices Applications Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Logic level interfaces ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Package Options Analog switches General purpose line drivers Telecom switches Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage D BVDSS ± 20V Operating and Storage Temperature Soldering Temperature* G D S S G D TO-243AA (SOT-89) -55°C to +150°C TO-92 300°C * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. 7-143 TP2535/TP2540 TP2535/TP2540 Thermal Characteristics TO-92 ID (continuous)* ID (pulsed) Power Dissipation @ TA = 25°C jc °C/W ja °C/W IDR* IDRM -0.12A Package -0.6A 0.74W 125 170 -0.12A -0.6A -1.2A 1.6W 15 78 -0.4A -1.2A TO-243AA -0.4A * ID (continuous) is limited by max rated Tj. Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Signficant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter BVDSS Min Drain-to-Source Breakdown Voltage TP2540 TP2540 Max Unit -400 TP2535 TP2535 Typ -350 Conditions IDSS Zero Gate Voltage Drain Current V VGS = VDS, ID = -1mA VGS = VDS, ID = -1mA nA VGS = ±20V, VDS = 0V µA VGS = 0V, VDS = Max Rating -1.0 Gate Body Leakage -1.0 mV/°C -10 Change in VGS(th) with Temperature IGSS -2.4 4.8 Gate Threshold Voltage VGS(th) VGS = 0V, ID = -2mA -100 VGS(th) V mA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current RDS(ON) Static Drain-to-Source 20 30 ON-State Resistance 19 25 -0.2 -0.3 -0.4 -1.1 VGS = -4.5V, VDS = -25V A Change in RDS(ON) with Temperature GFS Forward Transconductance CISS Input Capacitance 60 Common Source Output Capacitance 20 70 CRSS Reverse Transfer Capacitance 10 25 td(ON) Turn-ON Delay Time 10 tr Rise Time 10 td(OFF) Turn-OFF Delay Time 20 tf Fall Time 13 VSD Diode Forward Voltage Drop trr Reverse Recovery Time VGS = -10V, ID = -100mA 125 COSS VGS = -4.5V, ID = -100mA 0.75 100 %/°C VGS = -10V, ID = -100mA RDS(ON) VGS = -10V, VDS = -25V VDS = -25V, ID = -100mA 175 m pF VGS = 0V, VDS = -25V f = 1 MHz ns VDD = -25V ID = -0.4A RGEN = 25 -1.8 V VGS = 0V, ISD = -100mA ns 300 VGS = 0V, ISD = -100mA Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% PULSE GENERATOR INPUT 90% -10V t(ON) td(ON) Rgen t(OFF) td(OFF) tr tF D.U.T. 0V 90% OUTPUT INPUT 90% RL OUTPUT VDD 10% 10% VDD 7-144 TP2535/TP2540 TP2535/TP2540 Typical Performance Curves Output Characteristics Saturation Characteristics -1.0 -1.6 -0.8 VGS = -10V ID (amperes) ID (amperes) -2.0 -1.2 -8V -0.8 VGS = -10V - 8V -0.6 - 6V -0.4 -6V -0.4 -0.2 -4V - 4V 0 0 0 -10 -20 -30 -40 0 -50 -2 -4 VDS (volts) -10 2.0 TO-243AA VDS = -25V 0.4 0.3 PD (watts) GFS (siemens) -8 Power Dissipation vs. Ambient Temperature Transconductance vs. Drain Current 0.5 TA = -55°C 0.2 25°C 1.0 TO-92 125°C 0.1 0 0 0 -0.8 -0.4 -1.2 -1.6 0 -2.0 25 50 ID (amperes) 75 100 125 150 TA (°C) Maximum Rated Safe Operating Area Thermal Response Characteristics -10 1.0 Thermal Resistance (normalized) TA = 25°C TO-243AA(pulsed) ID (amperes) -6 VDS (volts) -1.0 TO-92 (pulsed) TO-243AA (DC) TO-92 (DC) -0.1 -0.01 -1 -10 -100 0.8 0.6 0.4 0.2 0 0.001 -1000 VDS (volts) TO-243AA TA = 25°C PD = 1.6W TO-92 P D = 1W T C = 25°C 0.01 0.1 tp (seconds) 7-145 1 10 7 TP2535/TP2540 TP2535/TP2540 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 1.1 100 V GS = -4.5V RDS(ON) (ohms) BVDSS (normalized) 80 1.0 60 40 VGS = -10V 20 0 0.9 -50 0 50 100 150 0 -0.4 -0.8 Tj (° C) -1.2 -1.6 -2.0 ID (amperes) Transfer Characteristics V(th) and RDS Variation with Temperature -2 2.5 1.2 TA = -55°C VGS(th) (normalized) ID (amperes) RDS(ON) @ -10V, -0.1A -1.2 25°C -0.8 2.0 1.1 1.5 1.0 1.0 0.9 V(th) @ -1mA -0.4 125°C 0.5 0.8 0 0 0 -2 -4 -6 -8 -10 -50 0 50 100 150 Tj (° C) VGS (volts) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics -10 200 f = 1MHz VDS = - 10V -8 VGS (volts) C (picofarads) 150 100 -6 VDS = - 40V -4 190 pF CISS 50 -2 60pF COSS CRSS 0 0 0 -10 -20 -30 0 -40 0.4 0.8 1.2 QG (nanocoulombs) VDS (volts) 7-146 1.6 2.0 RDS(ON) (normalized) VDS = - 25V -1.6