TP0102 TP0104 TP0102N3 TP0102ND TP0104N2 TP0104N3 TP0104N8 TP0104ND

TP0104 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS

TP0102 TP0102 TP0104 TP0104 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS(ON) (max) VGS(th) (max) ID(ON) (min) TO-39 TO-92 TO-243AA* Die -20V 4.0 -2.4V -0.85A - TP0102N3 TP0102N3 - TP0102ND TP0102ND -40V 4.0 -2.4V -0.85A TP0104N2 TP0104N2 TP0104N3 TP0104N3 TP0104N8 TP0104N8 TP0104ND TP0104ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels. MIL visual screening available Features Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Low threshold - 2.4V max. High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Low input and output leakage Complementary N- and P-channel devices Package Options Applications Logic level interfaces ideal for TTL and CMOS Solid state relays Battery operated systems D Photo voltaic drives G D S Analog switches TO-243AA (SOT-89) General purpose line drivers Telecom switches Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature DGS TO-39 Case: DRAIN -55°C to +150°C Soldering Temperature* 300°C Note: See Package Outline section for dimensions. * For TO-39 and TO-92, distance of 1.6 mm from case for 10 seconds. 7-107 SGD TO-92 TP0102/TP0104 TP0102/TP0104 Thermal Characteristics Package TO-39 -0.9A -2.0A TO-92 -0.5A -2.0A TO-243AA -0.26A ja °C/W IDR* IDRM 35 125 -0.90A -2.0A 1.0W ID (pulsed) jc °C/W 3.5W ID (continuous)* 125 170 -0.50A -2.0A 15 78 -0.26A -2.0A Power Dissipation @ TC = 25°C -2.0A 1.6W * ID (continuous) is limited by max rated Tj. T = 25°C. Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P increase possible on ceramic substrate. A D Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter BVDSS Min TP0104 TP0104 Max Unit -40 TP0102 TP0102 Drain-to-Source Breakdown Voltage Typ -20 Conditions V VGS = 0V, ID = -1.0mA -2.4 V VGS = VDS, ID = -1.0mA VGS(th) Gate Threshold Voltage V GS(th) Change in VGS(th) with Temperature -5.8 -6.5 mV/°C VGS = VDS, ID = -1.0mA IGSS Gate Body Leakage -1.0 -100 nA VGS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -10 µA VGS = 0V, VDS = Max Rating mA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C -1.0 -1 ID(ON) ON-State Drain Current -0.08 -0.25 -0.50 -0.85 RDS(ON) VGS = -3V, VDS = -20V A -1.70 VGS = -10V, VDS = -20V 15 Static Drain-to-Source ON-State Resistance VGS = -5V, VDS = -20V VGS = -3V, ID = -25mA 4.7 2.5 4.0 0.55 1.0 7.5 Change in RDS(ON) with Temperature GFS Forward Transconductance CISS Input Capacitance 60 COSS Common Source Output Capacitance 50 CRSS Reverse Transfer Capacitance 25 td(ON) Turn-ON Delay Time 4.0 6.0 tr Rise Time 7.0 10 td(OFF) Turn-OFF Delay Time 3.0 9.0 tf Fall Time 4.0 13 VSD Diode Forward Voltage Drop -1.2 -2.0 trr Reverse Recovery Time VGS = -10V, ID = -0.5A 300 225 %/°C 250 m RDS(ON) VGS = -5V, ID = -0.1A pF VGS = -10V, ID = -0.5A VDS = -20V, ID = -0.5A VGS = 0V, VDS = -20V f = 1 MHz ns VDD = -20V, ID = -0.85A RGEN = 25 V ISD = -0.25A, VGS = 0V ns ISD = -0.25A, VGS = 0V Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% PULSE GENERATOR INPUT 90% -10V t(ON) td(ON) Rgen t(OFF) td(OFF) tr tF D.U.T. 0V 90% OUTPUT INPUT 90% RL OUTPUT VDD 10% 10% VDD 7-108 TP0102/TP0104 TP0102/TP0104 Typical Performance Curves Output Characteristics Saturation Characteristics -2.5 -2.25 -2.0 -1.75 VGS = -10V -1.5 ID (amperes) ID (amperes) VGS = -10V -8V -1.0 -6V -1.25 -8V -.75 -6V -0.5 -.25 -4V -4V 0 0 0 -10 -20 -30 -40 0 -50 -2 -4 -10 5 VDS = -25V = -25V 0.4 4 TO-39 TA = -55°C 0.3 PD (watts) GFS (siemens) -8 Power Dissipation vs. Case Temperature Transconductance vs. Drain Current 0.5 TA = 25°C 0.2 TA = 125°C 0.1 3 2 TO-243AA TO-92 1 0 0 0 -0.4 -0.8 -1.2 -1.6 0 -2.0 25 125 100 150 TC (°C) Thermal Response Characteristics Maximum Rated Safe Operating Area -10 Thermal Resistance (normalized) 1.0 TO-39 (pulsed) TO-243AA (T A = 25°C) -1 TO-39 (DC) TO-92 (DC) -0.1 -0.01 -0.1 75 50 ID (amperes) ID (amperes) -6 VDS (volts) VDS (volts) TO-243AA TA = 25°C PD = 1.6W 0.8 0.6 0.4 TO-39 PD = 3.5W TC = 25°C 0.2 TO-92 P D = 1W T C = 25°C 0 -1 -10 0.001 -100 0.01 0.1 tp (seconds) VDS (volts) 7-109 1 10 TP0102/TP0104 TP0102/TP0104 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 8 RDS(ON) (ohms) 10 1.06 1.04 1.02 1.0 VGS = -5V 6 4 VGS = -10V 2 0 0.98 -50 0 50 100 0 150 -1 -2 ID (amperes) Tj (°C) Transfer Characteristics V(th) and RDS Variation with Temperature 2.0 -2.5 1.4 VDS = -25V 1.6 TA = -55 ° C VGS(th) (normalized) ID (amperes) -2.0 25 ° C -1.5 125° C -1.0 V(th) @ -1mA 1.2 RDS(ON) @ -10V, -0.5A 1.2 1.0 0.8 0.8 0.4 -0.5 0.6 0 0 0 -2 -4 -6 -8 -10 -50 0 50 100 VGS (volts) Tj (°C) Capacitance vs. Drain-to-Source Voltage 150 Gate Drive Dynamic Characteristics -10 200 f = 1MHz VDS = -10V -8 -40V 75 pF VGS (volts) C (picofarads) 150 100 -6 -4 CISS 50 -2 COSS 40pF CRSS 0 0 -10 -20 -30 -40 0 0.2 0.4 0.6 QG (nanocoulombs) VDS (volts) 7-110 0.8 1.0 RDS(ON) (normalized) BVDSS (normalized) 1.08