TP-100 datasheet and application note, data sheet, circuit, pdf, cross reference, pinout

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TP-100 Datasheet, Circuit, PDF, Cross Reference, & Application Note Results

		1 - 8 of about 8 for TP-100
TP100	NEC Electronics	TERMBOY IEEE1394 LONG-HAUL ADAPTER	51.37 Kb, 2 Pages.

TP-100	Astrodyne Corporation	100W Triple Output with PFC Function	323.26 Kb, 2 Pages.

TP-100A	Astrodyne Corporation	100W Triple Output with PFC Function	323.26 Kb, 2 Pages.

TP-100A	Mean Well Enterprises	PWR SPLY,SW,ENCL,101W,PFC, 5V@10A,12V@4A,-5V@0.6A	318.43 Kb, 2 Pages.

TP-100B	Astrodyne Corporation	100W Triple Output with PFC Function	323.25 Kb, 2 Pages.

TP-100C	Astrodyne Corporation	100W Triple Output with PFC Function	323.26 Kb, 2 Pages.

TP-100C	Mean Well Enterprises	PWR SPLY,SW,ENCL,1004W,PFC, 5V@10A,15V@3A,-15V@0.6A	318.43 Kb, 2 Pages.

TP100XC	Thomson Semiconductors	Telecom Integrated Circuits Data Book 1985	15.67 Kb, 1 Pages.

	1 - 50 of about 638 for TP-100
First line: transistor 1BT silicon planar epitaxial R02731B50W microwave power transistor Suitable short medium pulse application pulse width, duty factor Diffused emitter ballasting resistors improve ruggedness Interdigitated emitter-base structure provides high emitter efficiency Abstract: .. MODE OF CONDITIONS f Vcc PL Gp Tic OPERATION GHz V W dB % Class C tp = 100 ns; 2.7 to 40 typ. 60 typ. 7.5 typ. 40 6 = 10% 3.1 PINNING PIN DESCRIPTION 1 collector 2 emitter 3 base connected to flange .. Tags: transistor 1BT datasheet abstract..	195.63 Kb	3 Pages	OCR Scan

First line: silicon planar epitaxial microwave power transistor RN3034B80W Suitable short medium pulse application \|j.s pulse width, duty factor. Diffused emitter ballasting resistors improve ruggedness Interdigitated emitter-base structure provides high emitter efficiency Gold metallization with barrier realiz Abstract: .. MODE OF CONDITIONS f Vcc Pl Gp tic OPERATION GHz V W dB % Class C tp = 100 us; 3 to 3.4 40 typ. 80 typ. 6.5 typ. 35 5 = 10% PINNING PIN DESCRIPTION 1 collector 2 emitter 3 base connected to flange .. Tags: datasheet abstract..	194.45 Kb	3 Pages	OCR Scan

First line: TSHA550. GaAlAs Infrared Emitting Diode Package TSHA550. series high-efficiency infrared emitting diodes GaAlAs GaAlAs techno- logy, molded clear, untinted plastic package. comparison with standard GaAs GaAs technology, these high-intensity emitters feature about radiant power improvement. Abstract: .. Peak Forward Current tp/T = 0.5, tp = 100 s IFM 200 mA. Surge Forward Current tp = 100 s IFSM 2.5 A. Power Dissipation PV 210 mW. Junction Temperature Tj 100 C. Operating Temperature Range Tamb ‐55..+100 .. Tags: TSHA550	84.46 Kb	6 Pages	Original

First line: -33-13 RZ3135B50W philips international 711Dflat OOHbbOS HPHIN PULSED MICROWAVE POWER TRANSISTOR silicon planar epitaxial microwave power transistor, intended common-base class-C broadband pulse power amplifier with frequency range GHz. recommended radar applications. Interdigitated structure; givin Abstract: .. class-C 3.1 tp = 100 Â �us to 40 >50 >5.2 >30 see Fig. 6 S = 10% 3.5 MECHANICAL DATA Dimensions in mm FO-57D FO-57D see Fig. 1 WARNING Product and environmental safety â€” toxic materials This product contains .. Tags: datasheet abstract..	142.71 Kb	5 Pages	OCR Scan

First line: Dialight Detectors Infra Emitter 551-7110 1.57 [.062] 7.11 .280 5.08 [.200] Abstract: .. , f = 1 MHz 25 PF Forward Voltage tp = 20 msec 1.5 <1.8 V lF= 100 mA Forward Voltage tp = 100 usee 3.0 <3.8 V lF = 1A Reverse Current 0.01 <1 hA VR = 5V Radiant Intensity tp=20 ms 20-40 mW/sr Ip .. Tags: datasheet abstract..	137.07 Kb	1 Pages	OCR Scan

First line: TSSF4500 High-Speed Infrared Emitting Diode Side View Package TSSF4500 high-speed infrared emitting diode GaAlAs GaAlAs double hetero (DH) technology, molded clear, untinted plastic package with spherical side view lens. technology combines high speed DH-GaAlAs with efficiency standard GaAlAs forwar Abstract: .. Peak Forward Current tp/T = 0.5, tp = 100 s IFM 200 mA. Surge Forward Current tp = 100 s IFSM 1 A. Power Dissipation PV 150 mW. Junction Temperature Tj 100 C. Operating Temperature Range Tamb ‐40..+100 .. Tags: TSSF4500	37.79 Kb	3 Pages	Original

First line: TSHF5400* TSHF5400 High-Speed Emitting Diode Package TSHF5400 high-speed infrared emitting diode GaAlAs GaAlAs double hetero (DH) technology, molded clear, untinted plastic package. technology combines high speed DH-GaAlAs with efficiency standard GaAlAs forward voltage standard GaAs technology. Abstract: .. Peak Forward Current tp/T = 0.5, tp = 100 s IFM 200 mA. Surge Forward Current tp = 100 s IFSM 1 A. Power Dissipation PV 150 mW. Junction Temperature Tj 100 C. Operating Temperature Range Tamb ‐40..+100 .. Tags: TSHF5400* TSHF5400	42.1 Kb	3 Pages	Original

First line: 33-13 RZ2731B60W PHILIPS INTERNATIONAL 711002b OflS PULSED MICROWAVE POWER TRANSISTOR silicon planar epitaxial microwave power transistor, intended common-base class-C broadband pulse power amplifier with frequency range GHz. recommended radar applications. Abstract: .. amplifier mode of f VCC PL Gp VC zÂ �;ZL operation GHz V w dB % SÃ � class-C 2.7 tp = 100 jus to 40 >60 >6 >35 see Fig. 6 5 = 10% 3.1 MECHANICAL DATA Dimensions in mm FO-57D FO-57D see Fig. 1 . WARNING Product and environmental .. Tags: datasheet abstract..	143.83 Kb	5 Pages	OCR Scan

First line: transistor jus MAINTENANCE TYPE RZB12050Y RZ3135B14W PHILIPS INTERNATIONAL GDMbblE PHIN PULSED MICROWAVE POWER TRANSISTOR silicon microwave power transistor intended common-base, class-C narrowband amplifier operating under pulsed conditions. recommended applications. Interdigitated structure; givin Abstract: .. -base class-C narrowband amplifier mode of operation f GHz vcc V PL W Gp dB VC % tp = 100 us; S = 10% 1.09 50 >35 >7 >30 MECHANICAL DATA Dimensions in mm FO-57C FO-57C see Fig. 1 WARNING Product and environmental .. Tags: transistor jus datasheet abstract..	64.76 Kb	2 Pages	OCR Scan

First line: MAINTENANCE TYPE RZB12100Y PHILIPS international 711002b ocmbbm PULSED MICROWAVE POWER TRANSISTOR silicon power transistor common-base, class-C narrowband amplifier avionics applications. operates pulsed conditions only recommended applications. Features. Interdigitated structure giving high emitter Abstract: .. mode of operation f GHz vcc V PL W Gp dB VC % zi ZL n class-C tp = 100 ms, 5 = 10% 1.09 50 >80 >7 Â �30 see table MECHANICAL DATA FO-57C FO-57C see Fig.1 WARNING Product and environmental safety â€” toxic materials .. Tags: datasheet abstract..	64.14 Kb	2 Pages	OCR Scan

First line: RF NPN POWER TRANSISTOR 3 GHZ SlnlEET BLS3135-10 Microwave power transistor 2000 Philips PHILIPS Abstract: .. = 0 - 75 V Vebo emitter-base voltage open collector - 2 V 'cm peak collector current tp<100 us; 5 <10% - 1.5 A Ptot total power dissipation tp = 100 \|is; 5 = 10%; Th = 25 Â �C - 34 W Tstg storage temperature .. Tags: RF NPN POWER TRANSISTOR 3 GHZ datasheet abstract..	272.43 Kb	7 Pages	OCR Scan

First line: microwave transistor 03 SlnlEET BLS3135-20 Microwave power transistor 2000 Philips PHILIPS Abstract: .. = 0 - 75 V Vebo emitter-base voltage open collector - 2 V 'cm peak collector current tp<100 us; 5 <10% - 2 A Ptot total power dissipation tp = 100 \|is; 5 = 10%; Tmb = 25 Â �C - 80 W Tstg storage temperature .. Tags: microwave transistor 03 datasheet abstract..	274.71 Kb	7 Pages	OCR Scan

First line: silicon planar epitaxial microwave power transistor R02731B20W Suitable short medium pulse application pulse width, duty factor Diffused emitter ballasting resistors improve ruggedness Interdigitated emitter-base structure provides high emitter efficiency Gold metallization with barrier realizes ver Abstract: .. MODE OF CONDITIONS f Vcc Pl Gp rie OPERATION GHz V W dB <% Class C tp= 100 us; 2.7 to 40 typ. 25 typ. 7.5 typ. 40 S = 10% 3.1 PINNING PIN DESCRIPTION 1 collector 2 emitter 3 base connected to flange .. Tags: datasheet abstract..	108.72 Kb	3 Pages	OCR Scan

First line: K 3053 TRANSISTOR silicon planar epitaxial microwave power transistor R02731B10W Suitable short medium pulse application pulse width, duty factor Diffused emitter ballasting resistors improve ruggedness Interdigitated emitter-base structure provides high emitter efficiency Gold metallization with ba Abstract: .. MODE OF CONDITIONS f Vcc PL Gp rie OPERATION GHz V W dB % Class C tp = 100 fis; 2.7 to 40 typ. 12.5 typ. 7.5 typ. 40 8=10% 3.1 PINNING PIN DESCRIPTION 1 collector 2 emitter 3 base connected to .. Tags: K 3053 TRANSISTOR datasheet abstract..	109.38 Kb	3 Pages	OCR Scan

First line: DEVELOPMENT DATA This data sheet contains .advance information specifications subject change without notice. philips international^ n32r RX3034B70W 7110fl2b 004b53b iphin PULSED MICROWAVE POWER TRANSISTORS Abstract: .. mode of f vcc PL Gr T C ZÃ ; ZL operation GHz V W dB % n class-C 3.0 tp = 100 ÃŸs; to 40 >70 >5.4 >30 see Fig. 5 S = 10% 3.4 MECHANICAL DATA Dimensions in mm FO-125A FO-125A see Fig. 1 . WARNING Product and environmental .. Tags: datasheet abstract..	126.48 Kb	5 Pages	OCR Scan

First line: TSHG5510 High Speed Infrared Emitting Diode, RoHS Compliant, GaAlAs Double Hetero Abstract: .. Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA. Surge forward current tp = 100 μs IFSM 1 A. Power dissipation PV 180 mW. Junction temperature Tj 100 �C. Operating temperature range Tamb - 40 to + 85 .. Tags: TSHG5510	108.78 Kb	5 Pages	Original

First line: PHILIPS INTERNATIONAL status Preliminary specification date Issue June 1992 711DA2b DCmLiSTL, RZ3135B42W silicon planar epitaxial microwave power transistor IPHIN Abstract: .. MODE OF OPERATION f GHz vcc <v> PL W Gp dB r c <%> class C; 3.1 tp = 100 us; to 40 > 40 > 5.5 > 30 8 = 10% 3.5 WARNING Product and environmental safety â€” toxic materials This product contains beryllium .. Tags: datasheet abstract..	143.37 Kb	5 Pages	OCR Scan

First line: status Product specification date issua June 1992 PHILIPS INTERNATIONAL RZ3135B28W silicon planar epitaxial microwave power transistor 7110fi5b ODMbSTO LflH Abstract: .. MODE OF OPERATION f GHz vcc <V> PL W Gp dB 17C %> class C; 3.1 tp = 100 /us; to 40 > 27 > 5.5 > 30 S = 10% 3.5 WARNING Product and environmental safety â€” toxic materials__ This product contains .. Tags: datasheet abstract..	145.63 Kb	5 Pages	OCR Scan

First line: status Product specification date Issue June 1992 RZ2731B48W silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL 5LjE Abstract: .. MODE OF OPERATION f GHz vcc Â �vi PL W Gp dB tjc % class C; 2.7 tp = 100 lis; to 40 > 45 > 6 > 32 6 = 10% 3.1 WARNING Product and environmental safety â€” toxic materials__ This product contains .. Tags: datasheet abstract..	162.13 Kb	6 Pages	OCR Scan

First line: TSML1000 Extented Power Emitting Diode Package Abstract: .. Peak Forward Current tp/T = 0.5, tp = 100 s IFM 200 mA. Surge Forward Current tp = 100 s IFSM 1.5 A. Power Dissipation PV mW. Junction Temperature Tj 100 C. Operating Temperature Range Tamb ‐40..+85 C. Storage .. Tags: TSML1000	38.57 Kb	4 Pages	Original

First line: TSMF1000 High Speed Emitting Diode Package Abstract: .. Peak Forward Current tp/T = 0.5, tp = 100 s IFM 200 mA. Surge Forward Current tp = 100 s IFSM 1.0 A. Power Dissipation PV mW. Junction Temperature Tj 100 C. Operating Temperature Range Tamb ‐40..+85 C. Storage .. Tags: TSMF1000	38.14 Kb	4 Pages	Original

First line: status date Issue June 1992 RZ3135B14W silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL Abstract: .. MODE OF OPERATION f GHz VCC <V> PL W Gp dB T C <% class C; 3.1 tp = 100 jus; to 40 > 13 Â � 5.5 > 30 5=10% 3.5 WARNING Product and environmental safety â€” toxic materials This product contains beryllium .. Tags: datasheet abstract..	144.4 Kb	5 Pages	OCR Scan

First line: status Product specification date Issue June 1992 philips international T-33-/ RZ2731B32W silicon planar epitaxial microwave power transistor Abstract: .. = 0il - 50 V VEBO emitter-base voltage open collector â€” 3.0 V 'c collector current tp = 100 Â �is; 5 = 10%; note 1 - 2.8 A Ptot total power dissipation Tmb = 75Â �C; tp = 100 fis; S = 10%; note 1 _ 70 W Tstg storage .. Tags: datasheet abstract..	161.53 Kb	6 Pages	OCR Scan

First line: TSFF5510 High Speed Infrared Emitting Diode, RoHS Compliant, GaAlAs Double Hetero Abstract: .. Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA. Surge forward current tp = 100 μs IFSM 1 A. Power dissipation PV 180 mW. Junction temperature Tj 100 �C. Operating temperature range Tamb - 40 to + 85 .. Tags: TSFF5510	104.87 Kb	5 Pages	Original

First line: TSIP4400 TSIP 4400 TSIP440. GaAs/GaAlAs Emitting Diodes (T-1) Package TSIP440.-series high efficiency infrared emitting diodes GaAlAs GaAs technology, molded clear, grey tinted plastic packages. comparison with standard GaAs GaAs technology these emitters achieve about radiant power improvement simi Abstract: .. Peak Forward Current tp/T=0.5, tp=100 s IFM 200 mA. Surge Forward Current tp=100 s IFSM 2 A. Power Dissipation PV 180 mW. Junction Temperature Tj 100 C. Operating Temperature Range Tamb ‐55..+100 .. Tags: TSIP 4400 TSIP4401* TSIP4400* temic infrared TSIP440	118.25 Kb	6 Pages	Original

First line: T-33- RX2731B90W PHILIPS INTERNATIONAL 711Dfi2b D04bS3D PULSED MICROWAVE POWER TRANSISTOR silicon planar epitaxial microwave power transistor, intended common-base class-C broadband pulse power amplifier with frequency range GHz. recommended radar applications. Interdigitated structure; giving high Abstract: .. mode of f vcc PL GP VC ZÃŒ; ZL operation GHz V W dB % ÃŒ2 class-C 2.7 tp= 100 ms; to 40 > 80 >6.5 >35 see Fig. 5 5 = 10% 3.1 MECHANICAL DATA Dimensions in mm FO-125A FO-125A {see Fig. 1 . WARNING Product and environmental .. Tags: datasheet abstract..	117.74 Kb	5 Pages	OCR Scan

First line: status Product specification date Issue June 1992 RZ2731B16W silicon pianar epitaxial microwavejjoweriran^is^ 711002b OOHbSb '----- Abstract:* .. = on â€” 50 V VEBO emitter-base voltage open collector â€” 3.0 V â– c collector current tp = 100 fis-, S = 10%; note 1 - 1.4 A ptot total power dissipation Tmb = 75Â �C; tp = 100 fis-, S = 10%; note 1 _ 35 W Tstg .. Tags: datasheet abstract..	164.59 Kb	6 Pages	OCR Scan

First line: BZT03C-12 SILICON Z-DIODES TRANSIENT VOLTAGE SUPPRESSORS Features Glass passivated junction Hermetically sealed package Clamping time picoseconds 0.034 (0.9) 0.028 (0.7) Abstract: .. Non Repetitive Peak Surge Power Dissipation tp = 100 μs, Tj = 25 O C P ZSM 600 W. Junction Temperature Tj 175 OC. Storage Temperature Range TS -65 to +175 OC. Maximum Thermal Resistance and Characteristics .. Tags: code diode transient BZT03C-12	162.46 Kb	1 Pages	Original

First line: TSHF5200 High Speed Emitting Diode Package TSHF5200 high speed infrared light emitting diode GaAlAs GaAlAs double hetero (DH) technology, molded clear, untinted plastic package. technology combines high speed GaAlAs with efficiency standard GaAlAs forward voltage standard GaAs technology. TSHF 5200 Abstract: .. Peak Forward Current tp/T=0.5, tp=100 s IFM 200 mA. Surge Forward Current tp=100 s IFSM 1.5 A. Power Dissipation PV 210 mW. Junction Temperature Tj 100 C. Operating Temperature Range Tamb ‐40..+100 .. Tags: TSHF5200 TEMIC temic infrared TSHF5200	77.53 Kb	4 Pages	Original

First line: 7937 TSCA 6000 GaAlAs Infrared Emitting Diode with Collimating Lens TSCA6000 high intensity infrared emitting diode GaAlAs GaAlAs technology, molded clear, untinted plastic package. high efficiency chip technology combined with aspherical shaped lens provides collimated radiation outstanding intensi Abstract: .. Peak Forward Current tp/T=0.5, tp=100 s IFM 200 mA. Surge Forward Current tp=100 s IFSM 2.5 A. Power Dissipation PV 210 mW. Junction Temperature Tj 100 C. Operating Temperature Range Tamb ‐55..+100 .. Tags: 7937 ma 8630 tk 100 A tsca 6000 TSCA6000* TSCA6000	115.82 Kb	6 Pages	Original

First line: TSHA440. GaAlAs Infrared Emitting Diodes (T-1) Package TSHA44.series high efficiency infrared emitting diodes GaAlAs GaAlAs technology, molded clear, untinted plastic package. comparison with standard GaAs GaAs technology these high intensity emitters feature about radiant power improvement. Abstract: .. Peak Forward Current tp/T=0.5, tp=100 s IFM 200 mA. Surge Forward Current tp=100 s IFSM 2 A. Power Dissipation PV 180 mW. Junction Temperature Tj 100 C. Operating Temperature Range Tamb ‐55..+100 .. Tags: TSHA440 temic infrared TSHA440	119.89 Kb	6 Pages	Original

First line: TSSP4400 TSSP4400 GaAs/GaAlAs Infrared Emitting Diode Sideview Package TSSP4400 high intensity infrared emitting diode GaAlAs GaAs technology, molded clear, blue- grey tinted plastic package with spherical side view lens. device spectrally matched silicon photodiodes phototransistors. Abstract: .. Peak Forward Current tp/T=0.5, tp=100 s IFM 200 mA. Surge Forward Current tp=100 s IFSM 2.0 A. Power Dissipation PV 170 mW. Junction Temperature Tj 100 C. Operating Temperature Range Tamb ‐55..+100 .. Tags: TSSP4400 temic tssp4400 temic infrared CQX47 TSSP4400	104.21 Kb	5 Pages	Original

First line: TSAL6100 GaAs/GaAlAs Emitting Diode (T-1 Package Abstract: .. Peak Forward Current tp/T = 0.5, tp = 100 s IFM 200 mA. Surge Forward Current tp = 100 s IFSM 1.5 A. Power Dissipation PV 210 mW. Junction Temperature Tj 100 C. Operating Temperature Range Tamb ‐55..+100 .. Tags: TSAL6100	65.75 Kb	5 Pages	Original

First line: TSIP760. GaAs/GaAlAs Emitting Diodes Package TSIP760.-series infrared emitting diodes GaAlAs GaAs technology, molded clear, untinted plastic package. comparison with standard GaAs GaAs technology these high intensity emitters achieve about radiant power improvement similar wavelength. forward voltag Abstract: .. Peak Forward Current tp/T=0.5, tp=100 s IFM 300 mA. Surge Forward Current tp=100 s IFSM 3 A. Power Dissipation PV 210 mW. Junction Temperature Tj 100 C. Operating Temperature Range Tamb ‐55..+100 .. Tags: temic infrared TSIP760	112.38 Kb	6 Pages	Original

First line: TSIL6400 TSIL6400 GaAs/GaAlAs Emitting Diodes Package TSIL6400 high efficiency infrared emitting diode GaAlAs GaAs technology, molded clear, bluegrey tinted plastic packages. comparison with standard GaAs GaAs technology these emitters achieve about radiant power improvement similar wavelength. forw Abstract: .. Peak Forward Current tp/T=0.5, tp=100 s IFM 200 mA. Surge Forward Current tp=100 s IFSM 1.5 A. Power Dissipation PV 210 mW. Junction Temperature Tj 100 C. Operating Temperature Range Tamb ‐55..+100 .. Tags: TSIL6400* temic infrared infrared emitters and detectors data book temic TSIL6400	107.19 Kb	5 Pages	Original

First line: TSHF5410 High Speed Infrared Emitting Diode, RoHS Compliant, GaAlAs Double Hetero Abstract: .. Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA. Surge forward current tp = 100 μs IFSM 1.5 A. Power dissipation PV 160 mW. www.vishay.com For technical questions, contact: emittertechsupport .. Tags: TSHF5410	106.4 Kb	5 Pages	Original

First line: TSAL7400* TSAL7400 TSAL7400 High Power Infrared Emitting Diode, RoHS Compliant, GaAlAs/GaAs Abstract: .. Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA. Surge forward current tp = 100 μs IFSM 1.5 A. Power dissipation PV 160 mW. Junction temperature Tj 100 �C. Operating temperature range Tamb - 40 to .. Tags: TSAL7400* TSAL7400 TSAL7400	113.73 Kb	5 Pages	Original

First line: Application NOTES TSAL4400 TSAL4400 TEFT4300 TSAL4400 High Power Infrared Emitting Diode, RoHS Compliant, GaAlAs/GaAs Abstract: .. Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA. Surge forward current tp = 100 μs IFSM 1.5 A. Power dissipation PV 160 mW. Junction temperature Tj 100 �C. Operating temperature range Tamb - 40 to .. Tags: TSAL4400* TEFT4300 Application NOTES TSAL4400 APPLICATION CIRCUIT OF TSAL4400 TSAL4400	106.77 Kb	5 Pages	Original

First line: TSAL7300 High Power Infrared Emitting Diode, RoHS Compliant, GaAlAs/GaAs Abstract: .. Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA. Surge forward current tp = 100 μs IFSM 1.5 A. Power dissipation PV 160 mW. Junction temperature Tj 100 �C. Operating temperature range Tamb - 40 to .. Tags: 13602 TSAL7300	107.21 Kb	5 Pages	Original

First line: TSFF5210 TSFF5210 High Speed Infrared Emitting Diode, RoHS Compliant, GaAlAs Double Hetero Abstract: .. Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA. Surge forward current tp = 100 μs IFSM 1 A. Power dissipation PV 180 mW. www.vishay.com For technical questions, contact: emittertechsupport .. Tags: TSFF5210 diode SR 360 TSFF5210	105.53 Kb	5 Pages	Original

First line: TSAL6100 TSAL6100* TSAL6100 High Power Infrared Emitting Diode, RoHS Compliant, GaAlAs/GaAs Abstract: .. Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA. Surge forward current tp = 100 μs IFSM 1.5 A. Power dissipation PV 160 mW. Junction temperature Tj 100 �C. Operating temperature range Tamb - 40 to .. Tags: TSAL6100* TSAL6100	107.17 Kb	5 Pages	Original

First line: TSHF6210 High Speed Infrared Emitting Diode, RoHS Compliant, GaAlAs Double Hetero Abstract: .. Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA. Surge forward current tp = 100 μs IFSM 1.5 A. Power dissipation PV 160 mW. www.vishay.com For technical questions, contact: emittertechsupport .. Tags: diode SR 360 TSHF6210	106.17 Kb	5 Pages	Original

First line: TSFF6410 High Speed Infrared Emitting Diode, RoHS Compliant, GaAlAs Double Hetero Abstract: .. Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA. Surge forward current tp = 100 μs IFSM 1 A. Power dissipation PV 180 mW. www.vishay.com For technical questions, contact: emittertechsupport .. Tags: TSFF6410	106.23 Kb	5 Pages	Original

First line: TSHF4410* TSHF4410 High Speed Infrared Emitting Diode, RoHS Compliant, GaAlAs Double Hetero Abstract: .. Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA. Surge forward current tp = 100 μs IFSM 1.5 A. Power dissipation PV 180 mW. Junction temperature Tj 100 �C. www.vishay.com For technical questions .. Tags: TSHF4410* TSHF4410	103.62 Kb	5 Pages	Original

First line: Infrared Emitting Diode, tsal62* TSAL6200 TSAL6200 High Power Infrared Emitting Diode, RoHS Compliant, GaAlAs/GaAs Abstract: .. Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA. Surge forward current tp = 100 μs IFSM 1.5 A. Power dissipation PV 160 mW. Junction temperature Tj 100 �C. Operating temperature range Tamb - 40 to .. Tags: tsal62* Infrared Emitting Diode, TSAL6200 TSAL6200	107.33 Kb	5 Pages	Original

First line: TSHF5210 High Speed Infrared Emitting Diode, RoHS Compliant, GaAlAs Double Hetero Abstract: .. Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA. Surge forward current tp = 100 μs IFSM 1.5 A. Power dissipation PV 160 mW. www.vishay.com For technical questions, contact: emittertechsupport .. Tags: TSHF5210 diode SR 360 TSHF5210	106.66 Kb	5 Pages	Original

First line: TSFF5410 High Speed Infrared Emitting Diode, RoHS Compliant, GaAlAs Double Hetero Abstract: .. Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA. Surge forward current tp = 100 μs IFSM 1 A. Power dissipation PV 180 mW. www.vishay.com For technical questions, contact: emittertechsupport .. Tags: TSFF5410	106.2 Kb	5 Pages	Original

First line: TSAL7200 High Power Infrared Emitting Diode, RoHS Compliant, GaAlAs/GaAs Abstract: .. Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA. Surge forward current tp = 100 μs IFSM 1.5 A. Power dissipation PV 160 mW. Junction temperature Tj 100 �C. Operating temperature range Tamb - 40 to .. Tags: TSAL7200 TSAL7200	107.24 Kb	5 Pages	Original

First line: Infrared Emitting Diode, TSAL5100* TSAL5100 High Power Infrared Emitting Diode, RoHS Compliant, GaAlAs/GaAs Abstract: .. Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA. Surge forward current tp = 100 μs IFSM 1.5 A. Power dissipation PV 160 mW. Junction temperature Tj 100 �C. Operating temperature range Tamb - 40 to .. Tags: TSAL5100* Infrared Emitting Diode, TSAL5100 TSAL5100	107.88 Kb	5 Pages	Original

First line: TSAL7600 High Power Infrared Emitting Diode, RoHS Compliant, GaAlAs/GaAs Abstract: .. Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA. Surge forward current tp = 100 μs IFSM 1.5 A. Power dissipation PV 160 mW. Junction temperature Tj 100 �C. Operating temperature range Tamb - 40 to .. Tags: 13602 TSAL7600	117 Kb	5 Pages	Original

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