| Fulltext Datasheet Results |
1 - 50 of about 10000+ for TP Transistors |
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First line: Protection, Decoupling, Filtering Cypress CMOS Circuits This application note explains protect your with cost zener diode good insurance against inadvertent voltage transients. Also explained reason decoupling high frequency filtering capacitors required. method provided determining capacitors' valu Abstract: .. Tp. 1. 3.1416 10 10 9. 31.83 MH. F2. 1. tr. 1. 3.1416 2 10 9. 159.15 MHz .. Tags: datasheet abstract.. |
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First line: PD0206* c14 c13 Abstract: .. TP1 TP C 1. TP2 TP C 1. TP3 TP C 1. TP4 TP C 1. TP5 TP C 1. C1 .1uF. 1 2. C2 .1uF. 1 2. C3 .1uF. 1 2. C4 .1uF. 1 2. C5 .1uF. 1 2. C6 .. Tags: c14 c13 PD0206* datasheet abstract.. |
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First line: HI-POT T1/CEPT/ISDN-PRI TRANSFORMER P/N: S1021 DATA SHEET Feature Page Single port T1/E1 solution. Configurable Coax cable termination. Transfer-molded,IC -grade packaging. Dual surface mount,small package. Operating temperature range: +70. Storage temperature range: +125. Abstract: .. Configurable for TP and Coax cable termination. Transfer-molded,IC -grade packaging. Dual .. Tags: HI-POT transformer dual S1021 |
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First line: RS422 10uf,16v* header 7x2 rs485 rs485 connection Abstract: .. TP GND 1 TP GND 1. TXD 3 RXD 4 SHDN 5 V LOGIC 7 GND 8. VCC1 6 VCC2 1 IR_K 2. U1. TFDU4300 TFDU4300 . U1. TFDU4300 TFDU4300 . 2 4 6 8 .. TP GND 2 TP GND 2. R5 1R R5 1R .. Tags: header 7x2 10uf,16v* RX-6 rs485 connection RS485 RS422 MosChip Semiconductor MosChip irda datasheet. of rs485 datasheet abstract.. |
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First line: HI-POT Hi-Pot* COMMON MODE CHOKE P/N: BCM-5555 DATA SHEET Feature Used suppression noise. Page Designed Ethernet, Fast Ethernet, Token Ring, FDDI-TP,T1/CEPT ISDN. Operating temperature Storage temperature range: -25to +125. Abstract: .. FDDI-TP,T1/CEPT and ISDN. z Operating temperature : 0 °C to 70 °C. z Storage temperature range .. Tags: Hi-Pot* HI-POT BCM-5555 BCM-5555 |
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First line: TP-UK Order No.: 3008096 Abstract: .. TP-UK 35. Order No.: 3008096. http://eshop.phoenixcontact.de/phoenix/treeViewClick.do .. TP-UK 35 Order No.: 3008096 http://eshop.phoenixcontact.de/phoenix/treeViewClick.do .. Tags: 85369010 datasheet abstract.. |
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First line: 68040 Abstract: .. TP1 TP C 1. TP2 TP C 1. TP3 TP C 1. TP4 TP C 1. TP5 TP C 1. C1 .1uF. 1 2. C2 .1uF. 1 2. C3 .1uF. 1 2. C4 .1uF. 1 2. C5 .1uF. 1 2. C6 .. Tags: rn0805 68040* datasheet abstract.. |
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First line: A/RL -8087 L 10M marking omponents 20736 Marilla Street Chatsworth Abstract: .. 380mV 380mV 1000mV 1000mV IF=1mA, tp<300μs IF=40mA 40mA , tp<300μs. CT Total Capacitance 5pF VR=0, f=1MHZ. trr .. Tags: L 10M marking A/RL -8087 BAS40V |
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First line: PT02A k a 431 transistor ms3112* transistor 431 a n 431 transistor PT02 (MS3112) SP02 mounting receptacle (TP) .120 .005 Dia. (.147 .005 Dia., size .150 .005 Dia. Abstract: .. 0025 of TP * The PT02 PT02 and SP02 SP02 box mounting receptacles are made only to complete a series; no .. TP PT .120 ± .005 Dia. .147 ± .005 Dia., size 24 SP .150 ± .005 Dia. A N. K Z. L. M. 4 Holes .. Tags: n 431 transistor transistor 431 a k a 431 transistor PT02A SP02 pt02e -8-2P pt02e* ms3112* a 431 transistor 431 transistor 431 at MS3112 |
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First line: 8XC251Tx (8XC251TA, SPECIFICATION UPDATE Release Date: December, 1998 Order Number: 273221-001 Notice: 8XC251Tx contain design defects errors known errata. Characterized errata that cause 8XC251Tx's behavior deviate from published specifications documented this specification update. Information this Abstract: .. 8XC251TA 8XC251TA /TB/TP/TQ High Performance CHMOS Microcontroller datasheet - Commercial/Express .. AFFECTED PRODUCTS: 8XC251TA 8XC251TA /TB/TP/TQ High Performance CHMOS Microcontroller datasheet - .. Tags: 8XC251 step 273221 8XC251Tx 8XC251TA |
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First line: Wirewound Resistors PAC04* pulse load resistor pulse handling capability of wirewound resistors 4w resistor PRECISION AXIAL WIREWOUND RESISTOR Excellent stability reliabitity characteristics; temperature coefficient; High pulse load handling capabilities; High power dissipation small volume; Differe Abstract: .. 0.68 0.68 0.68 0.68Ω Ω Ω Ω tp/ti=1000. tp/ti=10. tp/ti=50. tp/ti=200. tp/ti=2. PAC 06 – Repetitive .. tp/ti=2. 100 100 100 100Ω Ω Ω Ω. 15Κ 15Κ 15Κ 15Κ Ω Ω Ω Ω. 1Κ 1Κ 1Κ 1Κ Ω Ω Ω Ω. 0.68 0.68 0.68 0.68Ω Ω Ω Ω. Phoenix .. Tags: 4w resistor pulse handling capability of wirewound resistors pulse load resistor PAC04* Wirewound Resistors Phoenix Passive Components PAC06* PAC03 PAC02* datasheet abstract.. |
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First line: PD0403 RN0701 ADS~ BLAST~ LW/R CS1~ PR/W WBE0~ WBE1~ WBE2~ WBE3~ RN9R10P10K PU0101 PU0102 PU0103 PU0104 PU0202 PU0203 PU0204 PU0205 RN0702 RN9R10P10K PU0206 PU0207 PU0301 PU0401 PU0402 PU0403 PU0801 PU0802 RN0703 RN9R10P10K PD0201 PD0202 PD0203 PD0204 PD0205 PD0206 PD0301 RN0704 RN9R10P100 PD0401 PD Abstract: .. TP1 TP. 1. 2. C22 .1uF. 1. 2. C23 .1uF. 1. 2. C24 .1uF. 1. 2. C25 .1uF. 1. 2. C26 .1uF. 1. 2. C27 .1uF. 1. 2. C28 .1uF. VCC. VDD. +5V. +5 .. TP2 TP. 1. TP3 TP. 1. TP4 TP. 1. TP5 TP. 1. 2. C29 .1uF. 1. 2. C30 .1uF. 1. 2. C31 .1uF. 1. 2. C32 .1uF. VCC. +5V .. Tags: PD0403 CLK25R CLK50R |
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First line: 192990-0960 Cannon connectors Cannon Trident Connector System Slimline Range offers profile connector system that well suited circuit board applications. precision machined contacts ideal power sensitive signals. Snap Together-Slimline Abstract: .. Number of Part Number Contacts Pack of 100 Nomenclature 3 192991-0337 TP 03 R4E 00Y. 4 192991 .. Number of Part Number Contacts Pack of 100 Nomenclature 3 192991-0532 TP 03 R3E 00Y. 4 192991 .. Tags: 192990-0960 cannon 25 pin connector 192991-0316 trident SLIMLINE POWER SYSTEM Cannon connectors 192990-0980 datasheet abstract.. |
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First line: 192991-0534 Cannon connectors rident Connector System Slimline Range offers profile connector system that well suited circuit board applications. precision machined contacts ideal power sensitive signals. Snap ogether Slimline Abstract: .. 3 192991-0337 TP 03 R4E 00Y. 4 192991-0347 TP 04 R4E 00Y. 6 192991-0342 TP 06 R4E 00Y. 9 192991-0536 TP .. 10 192991-0354 TP 10 R4E 00Y. Pin Header — Straight. Dimensions are shown in mm inch Dimensions .. Tags: Cannon connectors 192991-0534 cannon 25 pin connector SLIMLINE POWER SYSTEM datasheet abstract.. |
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First line: DNP resistors A 7840 HEADER7X2* CONN TRBLK 4 HEADER7X2 Abstract: .. TP DGND 2 TP DGND 2. CC11 CC11 0.1uF CC11 CC11 0.1uF. TP VCCK TP VCCK CC7 0.01uF 01uF CC7 0.01uF 01uF . CN1 USB TYPE .. TP REF T POINT A TP REF T POINT A. TP REGV18 REGV18 TP REGV18 REGV18 TP DGND 1 TP DGND 1. TP EXT_CLK TP .. Tags: CONN TRBLK 4 A 7840 DNP resistors OSC14 MCS7840 HEADER7X2* A 7840 16V 10uF M datasheet abstract.. |
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First line: TSCA 6000 GaAlAs Infrared Emitting Diode with Collimating Lens TSCA6000 high intensity infrared emitting diode GaAlAs GaAlAs technology, molded clear, untinted plastic package. high efficiency chip technology combined with aspherical shaped lens provides collimated radiation outstanding intensity ra Abstract: .. Forward Voltage IF = 100 mA, tp = 20 ms VF 1.5 1.8 V g IF = 1.5 A, tp = 100 s VF 3.2 4.9 V. Temp. Coefficient .. , tp = 20 ms Ie 70 120 mW/sr y IF = 1.5 A, tp = 100 s Ie 850 1400 mW/sr. Radiant Power IF = 100 mA, tp 20 ms e 20 .. Tags: TSCA6000* TSCA6000 |
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First line: 4511 datasheet SFH 4511 GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product RoHS Compliant 4511 Wesentliche Merkmale GaAs-LED sehr hohem Wirkungsgrad Sehr enger Abstrahlwinkel Hohe Hohe Features Very highly efficient GaAs-LED plastic package Peak Wavelength Very narrow radiation An Abstract: .. Bestellnummer Ordering Code Strahlstärkegruppierung 1 IF = 100 mA, tp = 20 ms Radiant .. , single pulse, tp = 20 μs. Permissible Pulse Handling Capability IF = f Ï„ , TA = 25 °C duty cycle D .. Tags: infrared remote switch IR 5MM LED SFH 4511 sck-0510 4511 datasheet 4511 datasheet abstract.. |
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First line: LM259*Â inductor datasheets LM259X Inductor 0.45 0.380 NEWAVA S34582 YYWW 0.100" Ref: LAYOUT 0.080" Abstract: .. 2: DCRs: 1 thru 4 tp 5 thru 8 = 0.30 Ohms Max. 3: SRF: 1.30 MHz Min. 4: HIPOT: 500 VDC Winding to core .. Tags: inductor datasheets LM259*Â LM259X |
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First line: 2130415 -TP2 Order No.: 2130415 Illustration shows product version UHV-TP Abstract: .. Illustration shows the product version UHV-TP 1. http://eshop.phoenixcontact.de/phoenix .. Tags: 2130415 datasheet abstract.. |
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First line: EP17 LM259X Inductor 3.25 0.850 NEWAVA S34566 YYWW Abstract: .. 1 thru 4 tp 5 thru 8 = 0.045 Ohms Max. 3: SRF: 2.0 MHz Min. 4: HIPOT: 500 VDC. Winding to core 2 Sec .. Tags: LM259X |
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First line: EP10 equivalent EP10 LM259X Inductor 0.500 NEWAVA S34547 YYWW Abstract: .. 1 thru 4 tp 5 thru 8 = 0.180 Ohms Max. 3: SRF: 950 kHz Min. 4: HIPOT: 500 VDC. Winding to core 2 Sec .. Tags: EP10 equivalent LM259X |
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First line: inductor datasheets EP13 LM259X Inductor 3.60 0.56 0.56 Abstract: .. 1 thru 4 tp 5 thru 8 = 0.035 Ohms Max. 3: SRF: 2.0 MHz Min. 4: HIPOT: 500 VDC. Winding to core 2 Sec .. Tags: inductor datasheets LM259X |
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First line: inductor datasheets EP17 LM259X Inductor 3.70 0.850 NEWAVA S34567 YYWW Abstract: .. 1 thru 4 tp 5 thru 8 = 0.040 Ohms Max. 3: SRF: 2.0 MHz Min. 4: HIPOT: 500 VDC. Winding to core 2 Sec .. Tags: inductor datasheets LM259X |
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First line: EP10 equivalent EP10 LM29X Inductor 0.63 Ref: LAYOUT NEWAVA S3491 YYWW Abstract: .. 2: DCRs: 1 thru 4 tp 5 thru 8 = 0.18 Ohms Max. 3: SRF: 950.0 kHz Min. 4: HIPOT: 500 VDC Winding to core .. Tags: EP10 equivalent LM259X |
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First line: 10/100BASE-T SINGLE PORT TRANSFORMER MODULES P/N: 16ST1043 DATA SHEET Feature Designed 100MB/S 150MB/S transmission over UTP-5 cable. ATM, BASE-TX TP-FDDI applications. Cable interface isolation common mode emissions. Fully integrated modules multi-port concentrators adapter card applications. 16-PI Abstract: .. 155 ATM, 100 BASE-TX and TP-FDDI applications. Cable interface for isolation and low common .. Tags: smd transistor A1 SMD A1 10/100 BASE Isolation Modules datasheet abstract.. |
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First line: marking 2U 20 diode marking 2U diode application circuit bav99 free pdf transistor a7s DIN 6784 BAV99. Silicon Switching Diode high-speed switching applications Series pair configuration BAV99 BAV99F BAV99T BAV99W Abstract: .. Pulse generator: tp = 100ns 100ns , D = 0.05, tr = 0.6ns, Ri = 50Ω. Oscillograph: R = 50, tr = 0.35ns 35ns C ≤ 1pF .. TP. 0. 10. 1. 10. 2. 10. -. IFmax. /I FDC. D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5. Permissible Puls Load RthJS = ƒ tp .. Tags: DIN 6784 free pdf transistor a7s application circuit bav99 marking 2U diode marking 2U 20 diode marking 2U diode E6327 BAV99 soldering BAV99 BAV99F BAV99T BAV99W |
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First line: DIODE 1N5822 Part Marking STMicroelectronics ST Low Forward Voltage Schottky Diode 1N582x DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS IF(AV) VRRM (max) FEATURES BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING FORWARD VOLTAGE DROP DO-201AD D Abstract: .. I FSM Surge non repetitive forward current tp = 10 ms Sinusoidal 80 A. Tstg Storage temperature .. , δ < 2 % * tp = 380 μs, δ < 2% To evaluate the conduction losses use the following equations : P = 0.33 .. Tags: ST Low Forward Voltage Schottky Diode Part Marking STMicroelectronics DIODE 1N5822 1N582x 1N5820 1N5821 1N5822 |
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First line: SPI11N60C3* SPA11N60C3 equivalent 11n60c3 TRANSISTOR SMD MARKING CODE 7A to220 pcb footprint SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOSTM Power Transistor Feature revolutionary high voltage technology Ultra gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improve Abstract: .. 2005-09-21 Rev .2.6 Page 1. SPP11N60C3 SPP11N60C3 . SPI11N60C3 SPI11N60C3 , SPA11N60C3 SPA11N60C3 . Cool MOSTM Power Transistor VDS .. Pulsed drain current, tp limited by Tjmax ID puls 33 33 A. Avalanche energy, single pulse. ID=5.5A .. Tags: to220 pcb footprint TRANSISTOR SMD MARKING CODE 7A SPI11N60C3* SPA11N60C3 equivalent SPA11N60C3 Q67040-S4395 11N60C3* SPP11N60C3 SPI11N60C3 SPA11N60C3 |
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First line: SPI07N60C3* to220 pcb footprint 07N60C3* 07N60C3 equivalent 07N60C3 SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOSTM Power Transistor Feature revolutionary high voltage technology Ultra gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance P-TO22 Abstract: .. 2005-09-14 Rev. 2.7 Page 1. SPP07N60C3 SPP07N60C3 . SPI07N60C3 SPI07N60C3 , SPA07N60C3 SPA07N60C3 . Cool MOSTM Power Transistor VDS .. Pulsed drain current, tp limited by Tjmax ID puls 21.9 21.9 A. Avalanche energy, single pulse. ID .. Tags: 07N60C3 equivalent to220 pcb footprint SPI07N60C3* SPA07N60C3 07N60C3* 07N60* SPP07N60C3 SPI07N60C3 SPA07N60C3 |
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First line: PG-TO-220-3* to220 pcb footprint 07n65c3* 07n65c3 SPP07N65C3, SPI07N65C3 SPA07N65C3 Cool MOSTM Power Transistor Feature revolutionary high voltage technology Ultra gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance P-TO220-3-31 Abstract: .. 2007-08-30 Rev. 1.8 Page 1. SPP07N65C3 SPP07N65C3 , SPI07N65C3 SPI07N65C3 SPA07N65C3 SPA07N65C3 . Cool MOSTM Power Transistor V DS .. tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC. 4 Safe operating area FullPAK. ID = f VDS parameter: D .. Tags: 07n65c3* to220 pcb footprint PG-TO-220-3* TO220 SPP07N65C3 SPP07N65C3 SPI07N65C3 SPA07N65C3 |
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First line: diode 400V 4AÂ SPA15N60C3 15N60* 15n60c3 15N60C3* SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOSTM Power Transistor P-TO220-3-31 Abstract: .. Rev. 3.0 Page 1 2007-08-30. SPP15N60C3 SPP15N60C3 , SPI15N60C3 SPI15N60C3 SPA15N60C3 SPA15N60C3 . Cool MOSTM Power Transistor VDS .. Pulsed drain current, tp limited by Tjmax ID puls 45 45 A. Avalanche energy, single pulse. ID=7.5A .. Tags: 15N60C3* SPA15N60C3 diode 400V 4AÂ 15N60C3 15N60* SPP15N60C3 SPI15N60C3 SPA15N60C3 |
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First line: 16N50C3* 16n50c3 SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOSTM Power Transistor P-TO220-3-31 Abstract: .. 2007-08-30 Rev. 3.0 Page 1. SPP16N50C3 SPP16N50C3 . SPI16N50C3 SPI16N50C3 , SPA16N50C3 SPA16N50C3 . Cool MOSTM Power Transistor VDS .. Pulsed drain current, tp limited by Tjmax ID puls 48 48 A. Avalanche energy, single pulse. ID=8 .. Tags: SPA16N50C3* 16N50C3* SPP16N50C3 SPI16N50C3 SPA16N50C3 |
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First line: SPB07N60C3 Cool MOSTM Power Transistor Feature revolutionary high voltage technology Ultra gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance Tjmax RDS(on) Abstract: .. 2005-09-14 Rev. 2.5 Page 1. SPB07N60C3 SPB07N60C3 . Cool MOSTM Power Transistor VDS @ Tjmax 650 V. RDS on 0.6 Ω .. Pulsed drain current, tp limited by Tjmax ID puls 21.9 A. Avalanche energy, single pulse. ID=5.5A .. Tags: spb07n60c3 DSP1629 07N60C3* 07N60* SPB07N60C3 |
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First line: Marking STMicroelectronics to220 stps10l60d TO220 HEATSINK DATASHEET STPS10L60D MAJOR PRODUCT CHARACTERISTICS IF(AV) VRRM (max) (max) 150°C 0.56 Abstract: .. IRRM Repetitive peak reverse current tp=2 μs square F=1kHz 1 A. T stg Storage temperature range - .. Pulse test : * tp = 380 μs, δ < 2% To evaluate the conduction losses use the following equation : P = 0 .. Tags: TO220 HEATSINK DATASHEET stps10l60d Marking STMicroelectronics to220 STPS10L60D |
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First line: ms 415 GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters Lead (Pb) Free Product RoHS Compliant Wesentliche Merkmale GaAs-LED sehr hohem Wirkungsgrad Hohe Gute spektrale Anpassung 415: 300, Anwendungen IR-Fernsteuerung Fernseh- Videorecordern, Lichtdimmern Gleich- Wechsellichtbetrieb Sensorik Diskrete Abstract: .. Bestellnummer Ordering Code Strahlstärkegruppierung1 IF = 100 mA, tp = 20 ms Radiant .. , single pulse, tp = 20 μs. Permissible Pulse Handling Capability IF = f Ï„ , TA = 25 °C duty cycle D .. Tags: ms 415 SFH 250 datasheet abstract.. |
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First line: FPQ-44-0.8-16* Enplas* qfp land pattern FPQ-44-0.8-16 qfp 0.8mm PA44QFxxx-44QF Data Sheet socket/44 plug Supported Device/Footprints These adapters accept devices have removable solder-down plug. This allows device inserted into removed from prototype easily. socket accepts packages with dimension s Abstract: .. PQF-44 PQF-44 PA44QF14C-44QF PA44QF14C-44QF 44QF-14C 44QF-14C 44QF-16-TP 44-PLUG-Q 44-PLUG-Q PQF-44 PQF-44 PA44QF16-44QF PA44QF16-44QF 44QF-16 44QF-16 44QF-16 44QF-16 .. -TP 44-PLUG-Q 44-PLUG-Q PQF-44 PQF-44 . Test Socket LSC # Style Mfgr/Pn. 44QF-03 44QF-03 Open Top Enplas OTQ-44-0 OTQ-44-0 .8-03 .. Tags: qfp 0.8mm FPQ-44-0.8-16 qfp land pattern FPQ-44-0.8-16* Enplas* PA44QFxxx-44QF |
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First line: FXO-HC53* FXO-HC535R SMD resistors 106 smd 2an Farnell Order Code: 1538961 MODEL FXO-HC535R-106.25 Part Number: 767-106.25-11 HCMOS, CERAMIC, SMD, OSCILLATOR Specifications Parameters Frequency Frequency Stability Temperature Range Operating (TOPR Storage (TSTG) Supply Voltage (VDD) Input Current (I Abstract: .. *TP are test points and are NC. 5.15 Max. 1.4 Max. Solder Pad Layout Recommended. 3.35 Max. 0.64. #1. #3. 2 .. #2 TP* #1. 1.27. Top View. Bottom View. GND. E/D. HCMOS LOAD 15 pF N C. # 4. # 3 # 2. # 1. OUT. 0.01 F. DD V. N C. Drawing .. Tags: smd 2an SMD resistors 106 FXO-HC535R FXO-HC53* datasheet abstract.. |
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First line: Farnell Order Code: 1538964 MODEL FXO-HC535R-156.25 Part Number: 767-156.25-4 HCMOS, CERAMIC, SMD, OSCILLATOR Specifications Parameters Frequency Frequency Stability Temperature Range Operating (TOPR Storage (TSTG) Supply Voltage (VDD) Input Current (IDD) Output Voltage (VOL) Abstract: .. *TP are test points and are NC. 5.15 Max. 1.4 Max. Solder Pad Layout Recommended. 3.35 Max. 0.64. #1. #3. 2 .. #2 TP* #1. 1.27. Top View. Bottom View. GND. E/D. HCMOS LOAD 15 pF N C. # 4. # 3 # 2. # 1. OUT. 0.01 F. DD V. N C. Drawing .. Tags: datasheet abstract.. |
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First line: S640C L7 diode smd transistor marking l6 TO-220AB transistor package TO-220AB Package STPS640CT/CF/CB MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM (max) (max) FEATURES BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING FORWARD DROP VOLTAGE CAPACITANCE THERMAL RESI Abstract: .. IRRM Repetitive peak reverse current tp = 2 μs F = 1kHz square 1 A. Tstg Storage temperature range - .. Pulse test : * tp = 380 μs, δ < 2% To evaluate the maximum conduction losses use the following .. Tags: TO-220AB Package TO-220AB transistor package smd transistor marking l6 L7 diode S640C dpak DIODE STPS640CT CF CB |
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First line: BAS21 SOT23 marking JSs BAS21. Silicon Switching Diode high-speed switching applications High breakdown voltage BAS21 Abstract: .. Puls generator: tp = 1μs, D = 0.05 tr = 0.6ns, Ri = 50Ω. Oscillograph: R = 50Ω , tr = 0.35ns 35ns , C ≤ 1pF. 1For .. tP. 0. 10. 1. 10. 2. 10. IFmax. /I FDC D = 0. 0.005 0.01 0.02 0.05 0.1 0.2 0.5. Permissible Puls Load RthJS = ƒ tp .. Tags: marking JSs BAS21 SOT23 BAS21 SOD323 BAS21 |
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First line: marking ld3 l4p diode kl1 diode KL4 SOT-23 BAT54S KL4 Forward Voltage Surface Mount device Very small conduction losses omponents 20736 Marilla Street Chatsworth Abstract: .. δ=tp/T tp. Fig.1 : Average forward power dissipation versus average forward current. 0 25 50 75 .. δ=tp/T tp Tamb °C Fig.2 : Average forward current versus ambient temperature δ = 1 . 1E-3 1E .. Tags: BAT54S KL4 KL4 SOT-23 kl1 diode l4p diode marking ld3 l44 sot-23 BAT54 l44 datasheet abstract.. |
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First line: Temic Semiconductors t-1 ir phototransistor Book Microelectronic infrared emitters and detectors data book temic HAS 50-S* CNY21Exi Abstract: .. Forward surge current tp 3 10 s IFSM 1.5 A. Power dissipation Tamb 3 25Î¥C PV 120 mW. Junction .. Collector peak current tp/T = 0.5, tp 3 10 ms ICM 100 mA. Power dissipation Tamb 3 25Î¥C PV 130 mW .. Tags: HAS 50-S* Book Microelectronic t-1 ir phototransistor Temic Semiconductors infrared emitters and detectors data book temic CNY21Exi CNY21Exi |
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First line: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters Cathode spacing 2.54 Abstract: .. Collector Transistor fex06630 fex06630 fexf6626 fexf6626 . Semiconductor Group 2 1999-02-04. SFH 415 SFH 416 .. Stoßstrom, tp = 10 μs, D = 0 Surge current. IFSM 3 A. Verlustleistung Power dissipation. Ptot 165 mW .. Tags: datasheet abstract.. |
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First line: C20 16 lm7805 datasheet lm7805 Abstract: .. TP1 TP C 1. TP2 TP C 1. TP3 TP C 1. TP4 TP C 1. TP5 TP C 1. C1 .1uF. 1 2. C2 .1uF. 1 2. C3 .1uF. 1 2. C4 .1uF. 1 2. C5 .1uF. 1 2. C6 .. Tags: C20 16 LM7805 20X2 datasheet abstract.. |
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First line: TO247 package dissipation 20n60s5* SPW20N60S5 equivalent 20N60S5 TO247 20n60s5 SPW20N60S5 Cool MOSTM Power Transistor RDS(on) 0.19 Abstract: .. Cool MOSTM Power Transistor VDS 600 V. RDS on 0.19 Ω. ID 20 A. Feature. • New revolutionary high .. Pulsed drain current, tp limited by Tjmax ID puls 40. Avalanche energy, single pulse. ID = 10 A, VDD .. Tags: 20N60S5 TO247 TO247 package dissipation SPW20N60S5 equivalent 20n60s5* SPW20N60S5 |
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First line: 11N60S5 equivalent SPW11N60S5 Cool MOSTM Power Transistor RDS(on) 0.38 Abstract: .. Cool MOSTM Power Transistor VDS 600 V. RDS on 0.38 Ω. ID 11 A. Feature. • New revolutionary high .. Pulsed drain current, tp limited by Tjmax ID puls 22. Avalanche energy, single pulse. ID = 5.5 A .. Tags: 11N60S5 equivalent SPW11N60S5 |
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First line: DTA124GKA DTA124GSA Transistors DTC124GUA DTC124GKA DTC124GSA Digital transistors (built-in resistor) DTA124GKA DTA124GSA Abstract: .. Digital transistors built-in resistor DTA124GKA DTA124GKA / DTA124GSA DTA124GSA . Digital transistors .. TP 5000. R. C. B. E. R. E : Emitter C : Collector B : Base. E : Emitter C : Collector B : Base. Features 1 The .. Tags: DTC124GSA DTA124GKA DTA124GSA DTC124GUA DTC124GKA DTC124GSA |
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First line: joystick switch OSRAM IR emitter Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter 4500 4505 4500 4505 Daten Preliminary Data Abstract: .. Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA, tp = 20 ms. ∆λ 40 .. Forward Current IF = f VF single pulse, tp = 20 μs. Permissible Pulse Handling Capability IF = f .. Tags: OSRAM IR emitter joystick switch 4505 opto 4505 datasheet abstract.. |
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First line: 20n65c3* TRANSISTOR SMD MARKING CODE 7A 20N65* 20N65C3 SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOSTM Power Transistor Feature revolutionary high voltage technology Worldwide best DS(on) Ultra gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductan Abstract: .. 2007-08-30 Rev. 3.0 Page 1. SPP20N65C3 SPP20N65C3 , SPA20N65C3 SPA20N65C3 SPI20N65C3 SPI20N65C3 . Cool MOSTM Power Transistor V DS .. tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC. 4 Safe operating area FullPAK. ID = f VDS parameter: D .. Tags: TRANSISTOR SMD MARKING CODE 7A SPP20N65C3 20n65c3* 20N65* SPP20N65C3 SPA20N65C3 SPI20N65C3 |
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First line: Marking B2 Note Number AN-C1-TP-A Development Tools Methods ball grid array (BGA) devices during development phase project represent some unique challenges terms circuit probing device removal should device parameters need altered. This application note intended introduce special versions ClearONE p Abstract: .. Number AN-C1-TP-A 1 of 3 Copyright CTS Corporation. Rev. Date 9/02 CTS reserves the right to make .. Number AN-C1-TP-A 2 of 3 Copyright CTS Corporation. Rev. Date 9/02 CTS reserves the right to make .. Tags: Marking B2 datasheet abstract.. |
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