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DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592 visit Linear Technology - Now Part of Analog Devices
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1 visit Linear Technology - Now Part of Analog Devices
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

TOSHIBA DIODE

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 1SS315 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS315 UHF Band Mixer Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VRM 5 V Forward current IF 30 mA Junction temperature Tj 125 °C Tstg , â'• TOSHIBA Weight: 0.004 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics , ¾ 0.6 ¾ pF Marking 1 2003-03-24 Toshiba Toshiba
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JDV2S01FS

Abstract: JDV2S01FS TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01FS VCO for the UHF band Unit: mm · High capacitance ratio: C1V/C4V = 2.0 (typ.) · Low series resistance: rs = 0.5 (typ.) · This device is suitable for use in a small-size tuner. 0.6±0.05 0.1 Rating Unit 0.07 , TOSHIBA Weight: 0.0006 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristic 1-1L1A , ) 2005-08-01 JDV2S01FS 3 2005-08-01 Toshiba
Toshiba
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JDV2S27SC

Abstract: JDV2S27SC TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S27SC VCO for UHF Band Radio High Capacitance Ratio : C1V/C4V = 2.9 (typ.) 0.19±0.02 Low Series Resistance : rs = 0.48 ohm (typ.) A two-terminal ultra-small package supports high-density mounting and the downsizing of end products. · , TOSHIBA 1-1R1A Weight: 0.00017 g (typ.) ] Electrical Characteristics (Ta = 25°C) Characteristic , ) 2005-11-07 JDV2S27SC 3 2005-11-07 Toshiba
Toshiba
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470MH

HP4291A

Abstract: JDP2S02AS JDP2S02AS TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02AS UHF~VHF Band RF Attenuator Applications Unit: mm · Suitable for reducing set's size as a result from enabling high-density mounting due to 2-pin small packages. · Low series resistance: rs = 1.0 (typ.) · Low capacitance , °C Tstg -55~150 °C Storage temperature range JEDEC JEITA TOSHIBA Weight , 10 (mA) 2005-11-25 JDP2S02AS 3 2005-11-25 Toshiba
Toshiba
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HP4291A TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE

1-1R1A

Abstract: JDP2S08SC JDP2S08SC TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S08SC Unit:mm UHF~VHF Band RF Switch Applications Suitable for reducing set's size as a result from enabling high-density mounting due to 2-pin small packages. · Low series resistance: rs = 1.0 (typ.) · Low capacitance , range SC2 JEDEC JEITA 1-1R1A TOSHIBA Weight: 0.00017 g(Typ.) Electrical Characteristics , 2005-12-05 JDP2S08SC 3 2005-12-05 Toshiba
Toshiba
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1-1R1A 100MH
Abstract: JDV2S05S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05S VCO for UHF band · Unit: mm High capacitance ratio: C1V/C4V = 1.9 (typ.) · Low series resistance: rs = 0.3 â"¦ (typ.) · This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C) Characteristics , Tstg -55~150 °C Storage temperature range JEDEC â'• JEITA â'• TOSHIBA , K 1 2002-01-23 Toshiba Toshiba
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Abstract: JDV4P08U TOSHIBA DIODE Silicon Epitaxial Planar Type JDV4P08U VCO for UHF Band Radio · Unit: mm High Capacitance Ratio : C1V/C4V = 3.0 (typ.) · Low Series Resistance : rs = 0.35 â"¦ (typ.) · The device incorporates two diodes which have no common pins, and is suitable for , °C JEITA â'• Storage temperature range TOSHIBA Weight: Electrical Characteristics (Ta , T 1 V 2 2 2002-01-23 Toshiba Toshiba
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Abstract: 1SS349 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS349 Ultra High Speed Switching Application Unit: mm l Low forward voltage : VF (3) = 0.49V (typ.) l Low reverse current : IR = 50µA (max) l Small package : SCâ'59 Maximum Ratings (Ta = 25°C) Characteristic Symbol , '236MOD EIAJ SCâ'59 1â'3G1B TOSHIBA Weight: 0.012g Electrical Characteristics (Ta = 25°C) Symbol , Marking 1 2001-06-07 Toshiba Toshiba
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Abstract: 1SS374 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS374 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current , Condition JEDEC EIAJ TOSHIBA Weight: 0.012g Unit V Marking 1 2001-06-07 Toshiba Toshiba
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SC-59
Abstract: JDV3S28CT TOSHIBA Diode Silicon Epitaxial Planar Type JDV3S28CT VCO for UHF Band Radio 0.6±0.05 0.5±0.03 Unit: mm · · This device is suitable for use in small tuners. Lead (Pb)-free. 1.0±0.05 0.65 0.25±0.03 0.35 0.15±0.03 Maximum Ratings (Ta = 25°C) Characteristic Reverse voltage , 0.05±0.03 CST3 JEDEC JEITA TOSHIBA 1.Anode 2.NC 3.Cathode 1-1S1A Weight: 0.00075 g (typ , Toshiba Toshiba
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Abstract: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE HN2S01F H mN'm n n i F mm w LOW VOLTAGE HIGH SPEED SWITCHING APPLICATION · · HN2S01F is composed of 3 , -100 Operating Temperature Range °C Topr * : This is the Maximum Ratings of single diode (Q1 or Q2 or Q3). In the case of using 2 or 3 diodes, the Maximum Ratings per diode is 75% of the single diode one , 4 1997 08-18 1/2 - TOSHIBA HN2S01F If - Vf IR - Vr REVERSE VOLTAGE V r (V) Ct -
OCR Scan
Abstract: 1SV313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313 VCO FOR UHF BAND RADIO Unit in mm , â'55~125 °C Storage Temperature Range JEDEC EIAJ TOSHIBA ELECTRICAL CHARACTERISTICS , â"¦ â'" VR = 1 V, f = 470 MHz MARKING 000707EAA2 · TOSHIBA is continually working to , the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of , failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In Toshiba
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Abstract: 1SV308 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV308 VHF Tuner Band Switch Applications · Unit: mm Small package. · Low series resistance: rs = 1.1 â"¦ (typ.) · Small total capacitance: CT = 0.3 pF (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit , °C Tstg -55~125 °C Storage temperature range JEDEC â'• JEITA â'• TOSHIBA , 2003-03-24 Toshiba Toshiba
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TO-236MOD

Abstract: TOSHIBA DIODE 1SS307 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 General Puropose Rectifier Applications Low forward voltage : VF = 1.0V (typ.) Low reverse current : IR = 0.1nA (typ.) Small total capacitance : CT = 3.0pF (typ.) Small package Unit: mm : SC-59 Maximum Ratings (Ta , current (10ms) TO-236MOD SC-59 1-3G1B TOSHIBA Electrical Characteristics (Ta = 25°C) Weight , 1 2005-12-19 1SS307 2 2005-12-19 1SS307 3 2005-12-19 Toshiba
Toshiba
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TO-236MOD TOSHIBA DIODE 30V10A

JDV2S08FS

Abstract: JDV2S08FS TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S08FS VCO for the UHF band Unit: mm · High capacitance ratio: C1V/C4V = 3.0 (typ.) · Low series resistance: rs = 0.35 (typ.) · This device is suitable for use in a small-size tuner. 0.6±0.05 0.1 Rating , JEITA TOSHIBA Weight: 0.0006 g (typ.) Electrical Characteristics (Ta = 25 , 2005-08-01 Toshiba
Toshiba
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Abstract: 1SS397 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS397 High Voltage, High Speed Switching Applications l Low forward voltage : VF = 1.0V (typ.) l High voltage Unit: mm : VR = 400V (min.) l Fast reverse recovery time : trr = 0.5µs (typ.) l Small total capacitance : CT = 2.5pF (typ , '55~125 °C Surge current (10ms) Storage temperature range JEDEC EIAJ TOSHIBA Weight , Toshiba Toshiba
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SC-70

1SS364

Abstract: TOSHIBA 1SS364 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS364 VHF TUNER BAND SWITCH , JEDEC EIAJ TOSHIBA 1-2S1B ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST , TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless , vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA
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OCR Scan
961001EAA2

1sv128

Abstract: TOSHIBA 1SV128 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1SV128 VHF-UHF BAND RF ATTENUATOR , H3 1. ANODE 2. N.C. 3. CATHODE JEDEC EIAJ SC-59 TOSHIBA 1-3G1B Weight : 0.012g , Carrier Life Time r IF = 10mA. Ir = 6mA â'" 400 â'" ns Marking B B ta ET 961001EAA2 # TOSHIBA is , to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA
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OCR Scan

1SS349

Abstract: TOSHIBA 1SS349 TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE 1SS349 LOW VOLTAGE , Temperature Range Tstg -55-125 TOSHIBA 1-3G1B Operating Temperature Range Lopr -40-100 °C Weight , â'" pF MARKING _B_ L 9 ^B-B 961001EAA2 # TOSHIBA is continually working to improve the quality , responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily
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OCR Scan
Abstract: 1SS200 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS200 Ultra High Speed Switching , (*) Unit Rating. Total Rating = Unit Rating × 1.5. JEDEC EIAJ TOSHIBA Weight: 0.13g 1-4E2B , Test Condition Unit V µA 961001EAA2 · TOSHIBA is continually working to improve the , the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human Toshiba
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