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Part : TO-10-030 Supplier : Bivar Manufacturer : Interstate Connecting Components Stock : 2,160 Best Price : $0.0812 Price Each : $0.0974
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Part : TO-100-030H Supplier : Bivar Manufacturer : Interstate Connecting Components Stock : 1,000 Best Price : $0.1257 Price Each : $0.1257
Part : 2N4391-TO-18 Supplier : Linear Integrated Systems Manufacturer : NAC Stock : 500 Best Price : $3.10 Price Each : $3.10
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Part : FP301-3/16TO1-BLACK-5-102P Supplier : 3M Electronics Manufacturer : Master Electronics Stock : 3 Best Price : $52.27 Price Each : $64.33
Part : FP301-3/32-TO-1/2-ASSRTED- Supplier : 3M Electronics Manufacturer : Master Electronics Stock : 5 Best Price : $58.14 Price Each : $77.16
Part : MTO13FAD-1.8432 Supplier : MtronPTI Manufacturer : Master Electronics Stock : 44 Best Price : $14.68 Price Each : $18.57
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TO145

Catalog Datasheet MFG & Type PDF Document Tags

TH3591B

Abstract: sma M4 diode . 14.0 to14.5 GHz LD7202L . 13.75 to14.5 GHz LD7202W . 12.75 to13.25, 13.75 to14.5 GHz Output Power
NEC
Original
LD7202 TH3591B UBR-120 LD7202B sma M4 diode traveling wave tube th359 THERMAL SWITCH AMP861647-8

TOS8102

Abstract: TOS-8102 TO145/9528 Yellow TITAN OPTO
TITAN OPTO
Original
TOS8102 TOS-8102 schematic s

TIM1414-5

Abstract: TOSHIBA TIM1414-5 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - P1dB =37.5 dBm at 14.0 GHz to14.5 GHz · High gain - G1dB =6.0 dB at 14.0 GHz to 14.5 GHz · Broad Band Internally Matched · Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics Symbol Output Power at 1dB Compression Point G1dB Unit Min. Typ. Max dBm 37.0 37.5 ­ dB P1dB Power Gain at 1dB Compression Point
Toshiba
Original
MW50300196

TIM1414-15

Abstract: TOSHIBA TIM1414-15 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - P1dB =42.0 dBm at 14.0 GHz to14.5 GHz · High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz · Broad Band Internally Matched · Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics Symbol Output Power at 1dB Compression Point G1dB Unit Min. Typ. Max dBm 41.0 42.0 ­ dB P1dB Power Gain at 1dB Compression Point
Toshiba
Original
MW50370196 2-11C1B 1414-15S-P

TIM1414

Abstract: TIM1414-10A TOSHIBA TIM1414-10A MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - P1dB =40.5 dBm at 14.0 GHz to14.5 GHz · High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz · Broad Band Internally Matched · Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics Symbol Output Power at 1dB Compression Point G1dB Unit Min. Typ. Max dBm 40.0 40.5 ­ dB P1dB Power Gain at 1dB Compression Point
Toshiba
Original
TIM1414 MW50340196 1414-10A
Abstract: : (650) 962-6845 17 TBQ-3017 VSAT 14 to14.5 GHz GaAs MMIC Power Amplifier for VSAT Applications Teledyne Wireless
Original

TIM1414-8

Abstract: TOSHIBA TIM1414-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - P1dB =39.5 dBm at 14.0 GHz to14.5 GHz · High gain - G1dB = 5.0 dB at 14.0 GHz to 14.5 GHz · Broad Band Internally Matched · Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics Symbol Output Power at 1dB Compression Point G1dB Unit Min. Typ. Max dBm 38.5 39.5 ­ dB P1dB Power Gain at 1dB Compression Point
Toshiba
Original
MW50310196 1414-10S-P

TBQ-3017

Abstract: TBQ-3017 VSAT 14 to14.5 GHz GaAs MMIC Power Amplifier for VSAT Applications Package Outline
Teledyne Wireless
Original

MIL-R-39005

Abstract: MIL-R-39005 rbr55 request to meet your unique requirements. MIL-R-39005 SPECIFICATIONS: Temperature Range -65 C to+145 C
-
OCR Scan
MIL-R-39005 rbr55 RB56 IRC 7010 rbr56 MIL-R-93 RBR53 RBR52 7005/SP41 7007/SP21

MIL-R-93

Abstract: MIL-R-39005 request to meet your unique requirements. MIL-R-39005 SPECIFICATIONS: Temperature Range -65 C to+145 C
-
OCR Scan
HR10 SP42 7030/VA34 7040/VA36
Abstract: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-1 OB Features â'¢ High power - P ^ b = 40.5 dBm at 14.0 GHz to14.5 GHz â'¢ High gain - G1cB = 6.0 dB at 14.0 GHz to 14.5 GHz j â'¢ Broadband internally matched â'¢ Hermetically sealed package RF Performance Specifications C = 25° C) E Characteristics Symbol Unit Min. Typ. dBm 40.0 40.5 - dB 5.5 6.0 - bs A - 4.0 5.0 Power Added Efficiency â'™ ladd % - 23 - Channel-Temperature -
OCR Scan
TIM1414-10B T0T72SD 0G22322
Abstract: TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - P1dB =37.5 dBm at 14.0 GHz to14.5 GHz · High gain - G 1dB =6.0 dB at 14.0 GHz to 14.5 GHz · Broad Band Internally M atched · H erm etically sealed package TIM1414-5 RF Performance Specifications (Ta = 25° C) Characteristics Symbol Condition Unit Min. Typ. Max Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency Channel-Temperature -
OCR Scan

BLW25

Abstract: bly91 +200 °C Caution All TO-145 headers incorporate Beryllium Oxide which is a toxic white material
-
OCR Scan
BLW25 bly91 BLY93 BLY78 BLY53A 61 TRANSISTOR SO-105 SO-104 T0-60CE S0-104 SOF-56
Abstract: TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - P1dB =40.5 dBm at 14.0 GHz to14.5 GHz · High gain - G 1dB = 6.0 dB at 14.0 GHz to 14.5 GHz · Broad Band Internally M atched · H erm etically sealed package TIM1414-1OA RF Performance Specifications (Ta = 25° C) Characteristics Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency Channel-Temperature Rise Symbol P-ldB Condition Unit -
OCR Scan
414-1OA

Tic 4148

Abstract: TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - P1dB =39.5 dBm at 14.0 GHz to14.5 GHz · High gain - G 1dB = 5.0 dB at 14.0 GHz to 14.5 GHz · Broad Band Internally M atched · H erm etically sealed package TIM1414-8 RF Performance Specifications (Ta = 25° C) Characteristics Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency Channel-Temperature Rise Symbol P-ldB Condition Unit
-
OCR Scan
Tic 4148
Abstract: TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - P1dB =42.0 dBm at 14.0 GHz to14.5 GHz · High gain - G 1dB = 6.0 dB at 14.0 GHz to 14.5 GHz · Broad Band Internally M atched · H erm etically sealed package TIM1414-15 RF Performance Specifications (Ta = 25° C) Characteristics Sym bol Condition Unit Min. Typ. M ax Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency Channel-Temperature -
OCR Scan
414-15S-P

MN35503

Abstract: 74HC14 , 512fs , 576fs fs=32.0 kHz 0 to14.5 kHz max. deviation +0.072dB/ ­ 0.047 dB Choice of input data
Panasonic
Original
MN35503 74HC14 74HC4050 78M05 9344MH

74HC14

Abstract: 74HC4050 , 512fs , 576fs fs=32.0 kHz 0 to14.5 kHz max. deviation +0.072dB/ ­ 0.047 dB Choice of input data
Panasonic
Original

74HC14

Abstract: 74HC4050 , 512fs , 576fs fs=32.0 kHz 0 to14.5 kHz max. deviation +0.072dB/ ­ 0.047 dB Choice of input data
Panasonic
Original
74HC14 oscillator application note

NE5212AD

Abstract: impedance matching transformer 100-75-120 NE Grade 0 to +90 °c SA Grade -40 to+105 °c SE Grade -55 to+145 °c DC ELECTRICAL
-
OCR Scan
NE5212AN NE5212AD NE5212AFE SA5212AD impedance matching transformer 100-75-120 NE5230 BPF31 NE/SA/SE5212A 140MH

voltage buffer 12v

Abstract: EL7515 . 14.0 to14.5 GHz LD7202L . 13.75 to14.5 GHz LD7202W . 12.75 to13.25, 13.75 to14.5 GHz Output Power
Intersil
Original
EL5424 voltage buffer 12v EL7515 EL7516 5V 100mA buffer EL7610 1-888-INTERSIL EL5224 EL5324 EL5524 EL5624
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