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TO145

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Abstract: . 14.0 to14.5 GHz LD7202L . 13.75 to14.5 GHz LD7202W . 12.75 to13.25, 13.75 to14.5 GHz Output Power NEC
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LD7202 TH3591B UBR-120 LD7202B sma M4 diode th359 LD7202A AMP861647-8
Abstract: TO145/9528 Yellow TITAN OPTO TITAN OPTO
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TOS8102 schematic s TOS-8102
Abstract: TOSHIBA TIM1414-5 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - P1dB =37.5 dBm at 14.0 GHz to14.5 GHz · High gain - G1dB =6.0 dB at 14.0 GHz to 14.5 GHz · Broad Band Internally Matched · Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics Symbol Output Power at 1dB Compression Point G1dB Unit Min. Typ. Max dBm 37.0 37.5 ­ dB P1dB Power Gain at 1dB Compression Point Toshiba
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MW50300196
Abstract: TOSHIBA TIM1414-15 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - P1dB =42.0 dBm at 14.0 GHz to14.5 GHz · High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz · Broad Band Internally Matched · Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics Symbol Output Power at 1dB Compression Point G1dB Unit Min. Typ. Max dBm 41.0 42.0 ­ dB P1dB Power Gain at 1dB Compression Point Toshiba
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MW50370196 2-11C1B 1414-15S-P
Abstract: TOSHIBA TIM1414-10A MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - P1dB =40.5 dBm at 14.0 GHz to14.5 GHz · High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz · Broad Band Internally Matched · Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics Symbol Output Power at 1dB Compression Point G1dB Unit Min. Typ. Max dBm 40.0 40.5 ­ dB P1dB Power Gain at 1dB Compression Point Toshiba
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TIM1414 MW50340196 1414-10A
Abstract: : (650) 962-6845 17 TBQ-3017 VSAT 14 to14.5 GHz GaAs MMIC Power Amplifier for VSAT Applications Teledyne Wireless
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Abstract: TOSHIBA TIM1414-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - P1dB =39.5 dBm at 14.0 GHz to14.5 GHz · High gain - G1dB = 5.0 dB at 14.0 GHz to 14.5 GHz · Broad Band Internally Matched · Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics Symbol Output Power at 1dB Compression Point G1dB Unit Min. Typ. Max dBm 38.5 39.5 ­ dB P1dB Power Gain at 1dB Compression Point Toshiba
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MW50310196 1414-10S-P
Abstract: TBQ-3017 VSAT 14 to14.5 GHz GaAs MMIC Power Amplifier for VSAT Applications Package Outline Teledyne Wireless
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Abstract: request to meet your unique requirements. MIL-R-39005 SPECIFICATIONS: Temperature Range -65 C to+145 C -
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MIL-R-39005 rbr55 IRC 7010 RB56 rbr56 MIL-R-93 RBR53 RBR52 7005/SP41 7007/SP21
Abstract: request to meet your unique requirements. MIL-R-39005 SPECIFICATIONS: Temperature Range -65 C to+145 C -
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HR10 SP42 7030/VA34 7040/VA36
Abstract: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-1 OB Features â'¢ High power - P ^ b = 40.5 dBm at 14.0 GHz to14.5 GHz â'¢ High gain - G1cB = 6.0 dB at 14.0 GHz to 14.5 GHz j â'¢ Broadband internally matched â'¢ Hermetically sealed package RF Performance Specifications C = 25° C) E Characteristics Symbol Unit Min. Typ. dBm 40.0 40.5 - dB 5.5 6.0 - bs A - 4.0 5.0 Power Added Efficiency â'™ ladd % - 23 - Channel-Temperature -
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TIM1414-10B T0T72SD 0G22322
Abstract: TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - P1dB =37.5 dBm at 14.0 GHz to14.5 GHz · High gain - G 1dB =6.0 dB at 14.0 GHz to 14.5 GHz · Broad Band Internally M atched · H erm etically sealed package TIM1414-5 RF Performance Specifications (Ta = 25° C) Characteristics Symbol Condition Unit Min. Typ. Max Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency Channel-Temperature -
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Abstract: +200 °C Caution All TO-145 headers incorporate Beryllium Oxide which is a toxic white material -
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BLW25 BLY93 bly91 BLY78 BLY88 BLY79 SO-105 SO-104 T0-60CE S0-104 SOF-56
Abstract: TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - P1dB =40.5 dBm at 14.0 GHz to14.5 GHz · High gain - G 1dB = 6.0 dB at 14.0 GHz to 14.5 GHz · Broad Band Internally M atched · H erm etically sealed package TIM1414-1OA RF Performance Specifications (Ta = 25° C) Characteristics Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency Channel-Temperature Rise Symbol P-ldB Condition Unit -
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414-1OA
Abstract: TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - P1dB =39.5 dBm at 14.0 GHz to14.5 GHz · High gain - G 1dB = 5.0 dB at 14.0 GHz to 14.5 GHz · Broad Band Internally M atched · H erm etically sealed package TIM1414-8 RF Performance Specifications (Ta = 25° C) Characteristics Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency Channel-Temperature Rise Symbol P-ldB Condition Unit -
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Tic 4148
Abstract: TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - P1dB =42.0 dBm at 14.0 GHz to14.5 GHz · High gain - G 1dB = 6.0 dB at 14.0 GHz to 14.5 GHz · Broad Band Internally M atched · H erm etically sealed package TIM1414-15 RF Performance Specifications (Ta = 25° C) Characteristics Sym bol Condition Unit Min. Typ. M ax Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency Channel-Temperature -
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414-15S-P
Abstract: , 512fs , 576fs fs=32.0 kHz 0 to14.5 kHz max. deviation +0.072dB/ ­ 0.047 dB Choice of input data Panasonic
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MN35503 74HC14 74HC4050 78M05 9344MH
Abstract: , 512fs , 576fs fs=32.0 kHz 0 to14.5 kHz max. deviation +0.072dB/ ­ 0.047 dB Choice of input data Panasonic
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Abstract: , 512fs , 576fs fs=32.0 kHz 0 to14.5 kHz max. deviation +0.072dB/ ­ 0.047 dB Choice of input data Panasonic
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74HC14 oscillator application note
Abstract: NE Grade 0 to +90 °c SA Grade -40 to+105 °c SE Grade -55 to+145 °c DC ELECTRICAL -
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NE5212AN NE5212AD NE5212AFE SA5212AD NE5230 BPF31 BPF31 PIN NE/SA/SE5212A 140MH
Abstract: . 14.0 to14.5 GHz LD7202L . 13.75 to14.5 GHz LD7202W . 12.75 to13.25, 13.75 to14.5 GHz Output Power Intersil
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EL5424 voltage buffer 12v SOT-23 op 30MHZ EL7610 EL7584 EL7583 1-888-INTERSIL EL5224 EL5324 EL5524 EL5624
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