NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: TO-3PN Non Isolated Leaded Plastic Package Package Outline, Packaging and Handling Information TO3PN_Pkg_Drawing Rev041105 Continental Device India Limited Data Sheet Page 1 of 6 Continental Device , 4.00 1.80 5.20 All Dimensions are in mm TO3PN_Pkg_Drawing Rev041105 Continental Device India , Directive 2002/96/EC 2002/96/EC on Waste Electrical and Electronic Equipment (WEEE). TO3PN_Pkg_Drawing Rev041105 , 91-11-2579 5290, 4141 1119 email@cdil.com www.cdilsemi.com TO3PN_Pkg_Drawing Rev041105 Continental ... | Original |
6 pages, |
ITO220AB to-3pn ts 4141 TRANSISTOR datasheet abstract |
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| Abstract: INCHANGE Power Transistors 2SC4687 2SC4687 Silicon NPN Transistors Features B C E With TO-3PN package For power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 500 V VCEO Collector to emitter voltage 400 V VEBO Emitter to base voltage 7 V IC Collector current 7 A PC , temperature -55~150 TO-3PN Electrical Characteristics Tc=25 SYMBOL ICBO PARAMETER Collector ... | Original |
1 pages, |
VCB-500V SAT-2 2SC4687 2SC4687 abstract |
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| Abstract: SavantIC Semiconductor Product Specification 2SA1104 2SA1104 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·High frequency ·High power dissipation APPLICATIONS ·For use in audio and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base ... | Original |
3 pages, |
TO-3Pn package IE1A 2SA1104 2SA1104 abstract |
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| Abstract: SavantIC Semiconductor Product Specification 2SD2340 2SD2340 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·DARLINGTON ·High DC current gain APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter ... | Original |
3 pages, |
TO-3PN 2SD2340 2SD2340 abstract |
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| Abstract: SavantIC Semiconductor Product Specification 2SD1456 2SD1456 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 1500 V 6 V 6 ... | Original |
3 pages, |
2SD1456 2SD1456 abstract |
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| Abstract: SavantIC Semiconductor Product Specification 2SC2579 2SC2579 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High power dissipation ·High current capability APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base ... | Original |
3 pages, |
2SC2579 2SC2579 abstract |
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| Abstract: SavantIC Semiconductor Product Specification 2SD1454 2SD1454 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 1500 V 6 V 4 ... | Original |
3 pages, |
2SD1454 2SD1454 abstract |
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| Abstract: SavantIC Semiconductor Product Specification 2SD1455 2SD1455 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 1500 V 6 V 5 ... | Original |
3 pages, |
2SD1455 2SD1455 abstract |
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| Abstract: SavantIC Semiconductor Product Specification 2SD2293 2SD2293 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ·Built-in damper diode APPLICATIONS ·For color TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base ... | Original |
3 pages, |
2SD2293 2SD2293 abstract |
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| Abstract: SavantIC Semiconductor Product Specification 2SA1102 2SA1102 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SC2577 2SC2577 ·High current capability ·High power dissipation APPLICATIONS ·Audio power amplifer applications ·DC-DC converters PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT ... | Original |
3 pages, |
pnp amplifer 2SC2577 2SA1102 2SA1102 abstract |
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| Abstract: 2N6513 2N6513 TO-3 2N6931 2N6931 TO-3 2N6497 2N6497 TO-220 2N6702 2N6702 TO-3 2N6514 2N6514 TO-3 2N6932 2N6932 TO-3PN 2N6498 2N6498 TO-220 2N6703 2N6703 TO-220 2N6530 2N6530 TO-220 2N6933 2N6933 TO-3PN 2N6499 2N6499 TO-220 2N6704 2N6704 TO-220 2N6531 2N6531 TO-220 2N6934 2N6934 TO-3PN 2N6500 2N6500 TO-66 2N6751 2N6751 TO-220 2N6532 2N6532 TO-220 2N6935 2N6935 TO-3PN 2N6510 2N6510 TO-3 2N6752 2N6752 TO-3 2N6533 2N6533 TO-220 2N6535 2N6535 TO-66 2N6511 2N6511 TO-3 2N6753 2N6753 TO-3 , TO-3 2SA1061 2SA1061 TO-3PN 2SA614 2SA614 TO-202 2SA744 2SA744 TO-3 2SA908 2SA908 TO-3 2SA1062 2SA1062 TO-3PN 2SA626 2SA626 ... | Original |
26 pages, |
BDY11 mj2955 TO-220 2SA1941 equivalent bu508df BU102 2sc2625 equivalent 2SC3262 2sc1027 2SC3883 S2000A3 2N3055 TO-220 2N3054 2N3055 2N3171 2N3054 abstract |
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| Abstract: 08cj-H-01 600V DTMOS 600V Power MOSFETs with New Super Junction structure TK40J60T80mMax.@VGS=10V ID=20A TK20A60UQg=27nC typ.600V/20A () TK20A60UIAR TK20A60UIAR=20A@VDD=90V Rg=25 L=0.63mH - trr=500A/s@VDSS=400V,150° C VDSS (V) RDS(on)Max.() ID (A) VGS=10V Qg typ. (nC) Ciss typ. (pF) TO-220SIS TK12A60U TK12A60U TK12D60U TK12D60U 600 12 0.4 14 720 TO-220(W) TK20A60U TK20A60U TK12J60U TK12J60U TK15A60U TK15A60U DTMOS II TO- ... | Original |
1 pages, |
TK40J60T TK12 TK12A60U TK12D60U 500a fet TK15A60U TK15D60U TK20D60U TK20A60UIAR TK15J60U Mosfet 600V, 20A TK12J60U MOSFET 400V TO-220 TK20A60U datasheet abstract |
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| Abstract: SavantIC Semiconductor Product Specification 2SD1451 2SD1451 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 1500 V 6 V 1.5 ... | Original |
3 pages, |
2SD1451 2SD1451 abstract |
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| Abstract: SavantIC Semiconductor Product Specification 2SD1452 2SD1452 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 1500 V 6 V 2.5 ... | Original |
3 pages, |
to-3pn 2SD1452 2SD1452 abstract |
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| Abstract: AÜK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA1104 2SA1104 DESCRIPTION • With TO-3PN package • High frequency • High power dissipation APPLICATIONS • For use in audio and general purpose applications PINNING PIN DESCRIPTION 1 Base o Collector:connected to mounting base 3 Emitter 2 -< 1 2 3 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=D SYMBOL PARAMETER CONDITIONS VALUE UNIT Vcbo Collector-base voltage Open emitter -120 V Veto Collector-emitter ... | OCR Scan |
2 pages, |
2SA1104 2SA1104 abstract |
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| Abstract: TOSHIBA TOSHIBA POWER MOSFETs 1Q, 1999 Alphanumerically Toshiba Power MOSFET List Alphanumerically Part VDSS RDS(ON) Number (V) () ID (A) Package Generation Status 2SJ147 2SJ147 -60 0.2 -12 TO-220IS -MOSII Non-Promotion 2SJ183 2SJ183 -60 0.35 -5 POWER MOLD L - -MOSIII Non-Promotion 2SJ200 2SJ200 2SJ201 2SJ201 -180 -200 0.83 0.63 -10 -12 TO-3P(N) TO-3P(L) -MOSII -MOSII M/P M/P 2SJ224 2SJ224 -60 0.2 -12 TO-220FL/SM ... | Original |
9 pages, |
2SJ241 2SK2352 2SK1117 2SK1487 2SK537 2sk851 2SK1357 2SK1213 2SJ239 2SK2030 2SK1079 2sk1603 datasheet transistor 2sk1213 2SK2351 2SK2146 datasheet abstract |
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| * Power Discrete MOSFET Electrical Circuit Model * * Product Name: FDA18N50 FDA18N50 FDA18N50 FDA18N50 * 500V N-Channel MOSFET and TO-3PN *- .SUBCKT FDA18N50 FDA18N50 FDA18N50 FDA18N50 20 10 30 Rg 10 1 1.58 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={5.25*{-0.001*TEMP+1.025}} KP={{-0.02*TEMP}+25} + THETA=0.032 VMAX=8.0E4 LEVEL=3) Cgs 1 3 2175p Rd 20 4 0.105 TC=0 * * Product Name: FDA18N50 FDA18N50 FDA18N50 FDA18N50 * 500V N-Channel MOSFET and TO-3PN www.datasheetarchive.com/files/fairchild/simulation-models/fda18n50.lib |
Fairchild | 22/10/2012 | 1.54 Kb | LIB | fda18n50.lib |
| * Power Discrete MOSFET Electrical Circuit Model * * Product Name: FQA13N80 FQA13N80 FQA13N80 FQA13N80_F109 * 500V N-Channel MOSFET and TO-3PN * Model Type: BSIM3V3 *- .SUBCKT FQA13N80 FQA13N80 FQA13N80 FQA13N80_F109 2 1 3 *Nom Temp=25 deg C Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Ebreak =10 .ENDS * Power Discrete MOSFET Thermal Model * * Product: TO-3PN *- .SUBCKT FQA13N80 FQA13N80 FQA13N80 FQA13N80_F109 www.datasheetarchive.com/files/fairchild/simulation-models/fqa13n80_f109.lib |
Fairchild | 22/10/2012 | 2 Kb | LIB | fqa13n80_f109.lib |
| * Power Discrete MOSFET Electrical Circuit Model * * Product Name: FCA76N60N FCA76N60N FCA76N60N FCA76N60N * 600V N-Channel MOSFET and TO-3PN * Model Type: BSIM3V3 *- .SUBCKT FCA76N60N FCA76N60N FCA76N60N FCA76N60N 2 1 3 *Nom Temp=25 deg C Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Ebreak 11 7 17 7 650 Lgate 1 9 1.183e-9 Ldrain 2 5 1.500e-9 Lsource 3 7 1.132e-9 RLgate 1 9 11 : TO-3PN *- .SUBCKT www.datasheetarchive.com/files/fairchild/simulation-models/fca76n60n.lib |
Fairchild | 22/10/2012 | 2.02 Kb | LIB | fca76n60n.lib |
| * Power Discrete MOSFET Electrical Circuit Model * * Product Name: FCA20N60F FCA20N60F FCA20N60F FCA20N60F * 600V N-Channel MOSFET and TO-3PN * Model Type: BSIM3V3 *- .SUBCKT FCA20N60F FCA20N60F FCA20N60F FCA20N60F 2 1 3 *Nom Temp=25 deg C Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Ebreak 11 7 17 7 650 Lgate 1 9 1.125e-9 Ldrain 2 5 1.500e-9 Lsource 3 7 1.105e-9 RLgate 1 9 1 -Channel MOSFET and TO-3PN www.datasheetarchive.com/files/fairchild/simulation-models/fca20n60f.lib |
Fairchild | 22/10/2012 | 2.03 Kb | LIB | fca20n60f.lib |
| * Power Discrete MOSFET Electrical Circuit Model * * Product Name: FQA62N25C FQA62N25C FQA62N25C FQA62N25C * 200V N-Channel MOSFET and TO-3PN * Model Type: BSIM3V3 *- .SUBCKT FQA62N25C FQA62N25C FQA62N25C FQA62N25C 2 1 3 *Nom Temp=25 deg C Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Ebreak 11 7 17 7 250 Lgate 1 9 1.125e-9 Ldrain 2 5 1.440e-9 Lsource 3 7 1.658e-9 RLgate 1 9 11 * Power Discrete MOSFET Thermal Model * * Product: TO-3PN www.datasheetarchive.com/files/fairchild/simulation-models/fqa62n25c.lib |
Fairchild | 22/10/2012 | 1.97 Kb | LIB | fqa62n25c.lib |
| * IGBT Electrical Parameter * * Product: FGA20S120M FGA20S120M FGA20S120M FGA20S120M * Package: TO-3PN * 1200V, 20A Shorted Anode IGBT * Model Format: SPICE2G6 *- .SUBCKT FGA20S120M FGA20S120M FGA20S120M FGA20S120M C G E Q1 83 81 85 VPNP M1 81 82 83 83 MOS w=1u l=1u LE 74 E 7.5e-9 RE 83 74 5.11e-3 RC 85 C 2.01e-3 RG G 82 0.5 CGC 82 C 1e-12 CGD 92 93 8.20e-09 CGE *- * Package: TO-3PN www.datasheetarchive.com/files/fairchild/simulation-models/fga20s120m.lib |
Fairchild | 22/10/2012 | 2.16 Kb | LIB | fga20s120m.lib |
| * Power Discrete MOSFET Electrical Circuit Model * * Product Name: FCA47N60F FCA47N60F FCA47N60F FCA47N60F * 600V N-Channel MOSFET and TO-3PN * Model Type: BSIM3V3 *- .SUBCKT FCA47N60F FCA47N60F FCA47N60F FCA47N60F 2 1 3 *Nom Temp=25 deg C Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Ebreak 11 7 17 7 700 Lgate 1 9 1.125e-9 Ldrain 2 5 1.500e-9 Lsource 3 7 1.105e-9 RLgate 1 9 11 -Channel MOSFET and TO-3PN www.datasheetarchive.com/files/fairchild/simulation-models/fca47n60f.lib |
Fairchild | 22/10/2012 | 2.03 Kb | LIB | fca47n60f.lib |
| * Power Discrete MOSFET Electrical Circuit Model * * Product Name: FQA11N90C FQA11N90C FQA11N90C FQA11N90C_F109 * 500V N-Channel MOSFET and TO-3PN * Model Type: BSIM3V3 *- .SUBCKT FQA11N90C FQA11N90C FQA11N90C FQA11N90C_F109 2 1 3 *Nom Temp=25 deg C Dbody 7 5 DbodyMOD Dbreak 5 11 Dbreak =10 .ENDS * Power Discrete MOSFET Thermal Model * * Product: TO-3PN *- .SUBCKT FQA11N90C FQA11N90C FQA11N90C FQA11N90C_F109 www.datasheetarchive.com/files/fairchild/simulation-models/fqa11n90c_f109.lib |
Fairchild | 22/10/2012 | 2 Kb | LIB | fqa11n90c_f109.lib |
| * Power Discrete MOSFET Electrical Circuit Model * * Product Name: FCA35N60 FCA35N60 FCA35N60 FCA35N60 * 600V N-Channel MOSFET and TO-3PN * Model Type: BSIM3V3 *- .SUBCKT FCA35N60 FCA35N60 FCA35N60 FCA35N60 2 1 3 *Nom Temp=25 deg C Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Ebreak 11 7 17 7 650 Lgate 1 9 1.125e-9 Ldrain 2 5 1.500e-9 Lsource 3 7 1.658e-9 RLgate 1 9 11 -Channel MOSFET and TO-3PN www.datasheetarchive.com/files/fairchild/simulation-models/fca35n60.lib |
Fairchild | 22/10/2012 | 2.03 Kb | LIB | fca35n60.lib |
| -Channel MOSFET and TO-3PN www.datasheetarchive.com/files/fairchild/simulation-models/fca36n60nf.lib |
Fairchild | 22/10/2012 | 2.03 Kb | LIB | fca36n60nf.lib |