NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 3VD186600YL 3VD186600YL 3VD186600YL 3VD186600YL MOSFET 3VD186600YLN 3VD186600YLN 600VMOS 600VMOS TO-251-3L 1N60 AC-DCDCDCHPMW 1.96mm*1.78mm 300±20m AlAg (Tamb=25°C) VDS 600 V VGS ±30 V ID 1.0 A TJ 150 °C Tstg -55-150 °C (Tamb=25°C) V(BR)DSS VGS = 0VID=250A 600 - - V Vth(GS) ID=250AVDS 250AVDS=VGS 2.0 - 4.0 V lGSS VGS=±30VVDS 30VVDS=0V - - ±100 nA IDSS ... | Original |
1 pages, |
1N60 1N60 MOS 3VD186600YL 3VD186600YLN 600VMOS 3VD186600YL abstract |
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| Abstract: SVD4N65T/F/M SVD4N65T/F/M 4A650V 4A650V N SVD4N65T/F/M SVD4N65T/F/M NMOS S-RinTMVDMOS AC-DC DC-DC H PMW 4A650VRDS 4A650VRDS(on)=2.3@VGS=10V dv/dt SVD4N65T SVD4N65T TO-220-3L SVD4N65T SVD4N65T SVD4N65F SVD4N65F TO-220F-3L SVD4N65F SVD4N65F SVD4N65M SVD4N65M TO-251-3L SVD4N65M SVD4N65M Http://www.silan.com.cn 1.0 2010.06.03 8 1 SVD4N65T/F/M SVD4N65T/F/M (TC=25°C , TO-251-3L Http://www.silan.com.cn 1.0 2010.06.03 8 7 SVD4N65T/F/M SVD4N65T/F/M · · · ... | Original |
8 pages, |
SVD4N65T SVD4N65M svd4n65f SVD4N65T/F/M 4A650V 4A650VRDS SVD4N65T/F/M abstract |
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| Abstract: SVD2N60M/F/T/D SVD2N60M/F/T/D 2A600V 2A600V N SVD2N60M/F/T/D SVD2N60M/F/T/D NMOS S-RinTMVDMOS AC-DC DC-DC H PMW 2A600VRDS 2A600VRDS(on)()=4.0@VGS=10V dv/dt SVD2N60M SVD2N60M TO-251-3L SVD2N60M SVD2N60M SVD2N60F SVD2N60F TO-220F-3L SVD2N60F SVD2N60F SVD2N60T SVD2N60T TO-220-3L SVD2N60T SVD2N60T SVD2N60D SVD2N60D TO-252-2L SVD2N60D SVD2N60D SVD2N60DTR SVD2N60DTR TO-252-2L SVD2N60D SVD2N60D Http , ~7.00 TO-220-3L : mm TO-251-3L Http://www.silan.com.cn 1.0 2010.05.13 9 6 ... | Original |
9 pages, |
TO-251-3L 13105 svd2n60 SVD2N60T 2A600V SVD2N60M SVD2N60D SVD2N60F SVD2N60M/F/T/D 2A600VRDS SVD2N60M/F/T/D abstract |
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| Abstract: 3VD186700YL 3VD186700YL 3VD186700YL 3VD186700YL MOSFET Ø 3VD186700YLN 3VD186700YLN 700VMOS 700VMOS Ø Ø Ø Ø TO-251-3L 1N70 Ø AC-DC DC-DCHPWM 6Inch 1960um *1780um 4570 dice/wafer 300±20um. / Al1%Si:3.0um / Ti / Ni / Ag : 0.1/0.3/0.4um 454.2um *536 um PAD1 *80um *80um (Tamb=25°C) VDS 700 V VGS ±30 V ID 1.0 A TJ 150 °C Tstg -55-150 °C Http://www.silan.com.cn ... | Original |
2 pages, |
1N70 BR 1n70 3VD186700YL 3VD186700YLN 700VMOS 3VD186700YL abstract |
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| Abstract: 3VD199700YL 3VD199700YL 3VD199700YL 3VD199700YL MOSFET Ø 3VD199700YLN 3VD199700YLN 700VMOS 700VMOS Ø Ø Ø Ø TO-251-3L 1N70 Ø AC-DCDCDCHPMW 6Inch 2070m *1900m 3913 dice/wafer 300±20um. / Al(1%Si) : 3um / Ag: 0.8um PAD1 556um *440um 80um *80um (Tamb=25°C) VDS 700 V VGS ±30 V ID 1.0 A TJ 150 °C Tstg -55-150 °C Http://www.silan.com.cn 1.0 ... | Original |
2 pages, |
700V mos 1N70 0.8um BR 1n70 3VD199700YL 3VD199700YLN 700VMOS 3VD199700YL abstract |
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| Abstract: 3VD186600YL 3VD186600YL 3VD186600YL 3VD186600YL MOSFET Ø 3VD186600YLN 3VD186600YLN 600VMOS 600VMOS Ø Ø Ø Ø TO-251-3L 1N60 Ø AC-DC DC-DCHPWM 6Inch 1960um *1780um 4570 dice/wafer 300±20um. / Al1%Si:3.0um / Ti / Ni / Ag :0.1/0.3/0.4um 454.2um *536 um PAD1 *80um *80um (Tamb=25°C) VDS 600 V VGS ±30 V ID 1.0 A TJ 150 °C Tstg -55-150 °C Http ... | Original |
2 pages, |
1N60 3VD186600YL 3VD186600YLN 600VMOS 3VD186600YL abstract |
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| Abstract: 3VD186700YL 3VD186700YL 3VD186700YL 3VD186700YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD186700YL 3VD186700YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced Ø Avalanche Energy Specified Ø Source-to-Drain Diode Recovery Time Comparable to voltage-blocking capability. a Discrete Fast Recovery Diode Ø The chips may packaged in TO-251-3L type and the typical equivalent product is 1N70. Ø ... | Original |
2 pages, |
4570 1N70 BR 1n70 3VD186700YL 3VD186700YL abstract |
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| Abstract: 3VD199700YL 3VD199700YL 3VD199700YL 3VD199700YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD199700YL 3VD199700YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced voltage-blocking capability. Ø Avalanche Energy Specified Ø Source-to-Drain Diode Recovery Time Comparable to a Ø The chips may packaged in TO-251-3L type and the Discrete Fast Recovery Diode typical equivalent product is 1N70. Ø ... | Original |
2 pages, |
1N70 3VD199700YL 3VD199700YL abstract |
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| Abstract: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world.TM Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power FranchiseTM Product Selector Guides Analog and Mixed Signal Products Discrete Power Products 2-1 Interface and Logic Products Microcontroller Products Optoelectronic Products 6-1 Packaging Infor ... | Original |
211 pages, |
motorola catalog SMD CODE PACKAGE SOT323 e 420 dual jfet semiconductors cross index FEP16DT 0032 tip122 tip127 mosfet audio amp IRF power mosfets catalog datasheet abstract |
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| Abstract: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM Fairchild Semiconductor, The Power Franchise® Product Selector Guides Analog and Mixed Signal Products Discrete Power Products 2-1 Interface and Logic Products Microcontroller Products Optoelectronic ... | Original |
214 pages, |
TRANSISTOR S1A 64 smd 1N4007 DO-214AC BC557 sot package sot-23 fairchild power bjt datasheet 1N4148 SMD LL-34 BC547 smd BC557 sot-23 pin configuration NPN transistor BC547 DIODE 1N4148 LL-34 BC547 sot package sot-23 FQPF*7N65C APPLICATIONS pin configuration NPN transistor BC548 datasheet abstract |
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