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TO-126C

Catalog Datasheet Results Type PDF Document Tags
Abstract: KSD1691 KSD1691 TO-126C Transistor (NPN) 1. EMITTER 2. COLLECTOR 3. BASE 10.800 11.200 TO-126C 7.800 8.200 4.040 4.240 2.700 2.900 3.100 3.300 3.000 1.800 3.400 2.200 123 Features Low Collector-Emitter Saturation Voltage & Large Collector Current High Power Dissipation: PC = 1.3W (Ta=25°C) 1.170 , 2A , IB1=-IB2=0.2A,RL=5 KSD1691 KSD1691 TO-126C Transistor (NPN) Typical Characteristics KSD1691 KSD1691 TO-126C Transistor (NPN) ... Original
datasheet

3 pages,
182.95 Kb

3400 transistor ic 4040 transistor 4040 TRANSISTOR C 4460 KSD1691 KSD1691 abstract
datasheet frame
Abstract: 2SB649/2SB649A 2SB649/2SB649A TO-126C Transistor (PNP) 1. EMITTER 2. COLLECTOR 3. BASE 10.800 11.200 TO-126C 7.800 8.200 4.040 4.240 2.700 2.900 3.100 3.300 3.000 1.800 3.400 2.200 123 Features Low frequency power amplifier complementary pair with 2SD669/A 2SD669/A 15.300 15.700 1.170 1.370 1.300 1.500 , Range 2SB649 2SB649 2SB649A 2SB649A hFE(1) B 60-120 60-120 C 100-200 100-200 2SB649/2SB649A 2SB649/2SB649A TO-126C Transistor (PNP) Typical Characteristics 2SB649/2SB649A 2SB649/2SB649A TO-126C Transistor (PNP) ... Original
datasheet

3 pages,
190.21 Kb

transistor 2sb649 TO-126C 2SB649A transistor 4040 3400 transistor 2SB649 TRANSISTOR C 4460 2SB649/2SB649A 2SB649/2SB649A abstract
datasheet frame
Abstract: 2SD794/2SD794A 2SD794/2SD794A TO-126C Transistor (NPN) 1. EMITTER 2. COLLECTOR TO-126C 7.800 8.200 4.040 4.240 10.800 11.200 2.700 2.900 3.100 3.300 3.000 1.800 3.400 2.200 123 3. BASE Features High voltage and Large current capacity Complementary to 2SB744 2SB744,2SB744A 2SB744A 15.300 15.700 1.170 1.370 1.300 1.500 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg , 60-120 Q 100-200 P 160-320 2SD794/2SD794A 2SD794/2SD794A TO-126C Transistor (NPN) Typical Characteristics ... Original
datasheet

2 pages,
320.92 Kb

transistor 2sd794 2sd794 transistor 3400 transistor transistor 4040 2SD794/2SD794A 2SD794/2SD794A abstract
datasheet frame
Abstract: 2SD669/2SD669A 2SD669/2SD669A TO-126C Transistor (NPN) 1. EMITTER 2. COLLECTOR 3. BASE 10.800 11.200 TO-126C 7.800 8.200 4.040 4.240 2.700 2.900 3.100 3.300 3.000 1.800 3.400 2.200 123 Features Low frequency power amplifier complementary pair with 2SB649/A 2SB649/A 1.170 1.370 15.300 15.700 1.300 1.500 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO Parameter Collector- Base Voltage , 60-120 C 100-200 100-200 D 160-320 2SD669/2SD669A 2SD669/2SD669A TO-126C Transistor (NPN) Typical ... Original
datasheet

2 pages,
160.5 Kb

TO-126C 3400 transistor 2SD669 TRANSISTOR C 4460 2SD669/2SD669A 2SD669/2SD669A abstract
datasheet frame
Abstract: switching applications. 1 TO-126C FEATURES * High Power: 850mW * High Current: 1A 1 TO-92 , 2N6718-x-T92-K 2N6718L-x-AB3-R Package SOT-89 TO-126C TO-92 TO-92 Pin Assignment 1 2 3 B C E , : Tape Box, K: Bulk, R: Tape Reel (2)Package Type (2) AB3: SOT-89, T6C: TO-126C, T92: TO-92 (3 , 5 V 1 A 2 A SOT-89 0.5 W Total Power Dissipation PD TO-126C 1.6 W TO-92 850 mW , Power Dissipation, PD(mW) Power Derating 2000 1500 TO-126C TO-92 SOT-89 1000 500 0 0 ... Original
datasheet

4 pages,
96.82 Kb

TO-126C npn transistor to 92 2N6718L 2N6718 80V 1A NPN Transistor TO-92 2N6718 abstract
datasheet frame
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD886 2SD886 TRANSISTOR (NPN) TO-126C FEATURES Power dissipation PCM: 1. EMITTER 1 W (Tamb=25) 2. COLLECTOR Collector current 3 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP ... Original
datasheet

1 pages,
25.91 Kb

2SD886 2SD886 abstract
datasheet frame
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SC3420 2SC3420 TRANSISTOR (NPN) TO-126C FEATURES Power dissipation PCM: 1.5 W (Tamb=25) 1. EMITTER Collector current 5 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. BASE 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP ... Original
datasheet

1 pages,
26.06 Kb

2SC3420 2SC3420 abstract
datasheet frame
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD669 2SD669 TRANSISTOR (NPN) TO-126C FEATURES Power dissipation PCM: 1 W (Tamb=25) 1. EMITTER Collector current 1.5 A ICM: Collector-base voltage 180 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. BASE 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP ... Original
datasheet

2 pages,
60.08 Kb

transistor 2sd669 2SD669 2SD669 abstract
datasheet frame
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SC3807 2SC3807 TRANSISTOR (NPN) TO-126C FEATURES Power dissipation PCM: 1.25 W (Tamb=25) 1. BASE Collector current 2 A ICM: Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. EMITTER 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP ... Original
datasheet

2 pages,
89.18 Kb

transistor 2SC3807 IB-20mA 2SC3807 equivalent 2sc3807 2SC3807 2SC3807 abstract
datasheet frame
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A 2SB649/2SB649A TRANSISTOR (PNP) TO-126C FEATURES Power dissipation PCM: 1 W (Tamb=25) 1. EMITTER Collector current -1.5 A ICM: Collector-base voltage V V(BR)CBO : -180 Operating and storage junction temperature range 2. COLLECTOR 3. BASE 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol Collector-base breakdown voltage V(BR)CBO ... Original
datasheet

1 pages,
34.19 Kb

TO-126C 2SB649A 2SB649 2SB649/2SB649A 2SB649/2SB649A abstract
datasheet frame
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SA1627 2SA1627 TRANSISTOR (PNP) TO-126C FEATURES Power dissipation PCM : 1.25 W (Tamb=25) 1. EMITTER Collector current : -1 A ICM Collector-base voltage V V(BR)CBO : -600 Operating and storage junction temperature range 2. COLLECTOR 3. BASE 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP ... Original
datasheet

2 pages,
135.51 Kb

TO-126C pnp transistor 600V pnp 600v 1a 2sa1627 2SA1627 2SA1627 abstract
datasheet frame