NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: switching applications. 1 TO-126C FEATURES * High Power: 850mW * High Current: 1A 1 TO-92 , 2N6718-x-T92-K 2N6718L-x-AB3-R Package SOT-89 TO-126C TO-92 TO-92 Pin Assignment 1 2 3 B C E , : Tape Box, K: Bulk, R: Tape Reel (2)Package Type (2) AB3: SOT-89, T6C: TO-126C, T92: TO-92 (3 , 5 V 1 A 2 A SOT-89 0.5 W Total Power Dissipation PD TO-126C 1.6 W TO-92 850 mW , Power Dissipation, PD(mW) Power Derating 2000 1500 TO-126C TO-92 SOT-89 1000 500 0 0 ... | Original |
4 pages, |
TO-126C npn transistor to 92 2N6718 80V 1A NPN Transistor TO-92 2N6718L 2N6718 abstract |
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| Abstract: Transys Electronics L I M I T E D TO-126C Plastic-Encapsulated Transistors 2SB649/2SB649A 2SB649/2SB649A TRANSISTOR (PNP) TO-126C FEATURES Power dissipation PCM: 1 W (Tamb=25) 1. EMITTER Collector current -1.5 A ICM: Collector-base voltage V V(BR)CBO : -180 Operating and storage junction temperature range 2. COLLECTOR 3. BASE 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol Collector-base breakdown voltage V(BR)CBO Collector-emitter ... | Original |
1 pages, |
2SB649A 2SB649 datasheet abstract |
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| Abstract: Transys Electronics L I M I T E D TO-126C Plastic-Encapsulated Transistors 2SA1357 2SA1357 TRANSISTOR (PNP) TO-126C FEATURES Power dissipation PCM : 1.5 W (Tamb=25) 1. EMITTER Collector current : -5 A ICM Collector-base voltage V V(BR)CBO : -35 Operating and storage junction temperature range 2. COLLECTOR 3. EMITTER 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX ... | Original |
1 pages, |
2SA1357 datasheet abstract |
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| Abstract: Transys Electronics L I M I T E D TO-126C Plastic-Encapsulated Transistors 2SD669 2SD669 TRANSISTOR (NPN) TO-126C FEATURES Power dissipation PCM: 1 W (Tamb=25) 1. EMITTER Collector current 1.5 A ICM: Collector-base voltage 180 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. BASE 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX ... | Original |
2 pages, |
2SD669 datasheet abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A 2SB649/2SB649A TRANSISTOR (PNP) TO-126C FEATURES Power dissipation PCM: 1 W (Tamb=25) 1. EMITTER Collector current -1.5 A ICM: Collector-base voltage V V(BR)CBO : -180 Operating and storage junction temperature range 2. COLLECTOR 3. BASE 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol Collector-base breakdown voltage V(BR)CBO ... | Original |
1 pages, |
TO-126C 2SB649A 2SB649 2SB649/2SB649A 2SB649/2SB649A abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD669A 2SD669A TRANSISTOR (NPN) TO-126C FEATURES Power dissipation PCM: 1 W (Tamb=25) 1. EMITTER Collector current 1.5 A ICM: Collector-base voltage 180 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. BASE 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP ... | Original |
2 pages, |
2SD669A 2SD669A abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD669 2SD669 TRANSISTOR (NPN) TO-126C FEATURES Power dissipation PCM: 1 W (Tamb=25) 1. EMITTER Collector current 1.5 A ICM: Collector-base voltage 180 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. BASE 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP ... | Original |
2 pages, |
2SD669 2SD669 abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SC3420 2SC3420 TRANSISTOR (NPN) TO-126C FEATURES Power dissipation PCM: 1.5 W (Tamb=25) 1. EMITTER Collector current 5 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. BASE 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP ... | Original |
1 pages, |
2SC3420 2SC3420 abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SC3807 2SC3807 TRANSISTOR (NPN) TO-126C FEATURES Power dissipation PCM: 1.25 W (Tamb=25) 1. BASE Collector current 2 A ICM: Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. EMITTER 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP ... | Original |
2 pages, |
transistor 2SC3807 2SC3807 equivalent 2sc3807 2SC3807 2SC3807 abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD886 2SD886 TRANSISTOR (NPN) TO-126C FEATURES Power dissipation PCM: 1. EMITTER 1 W (Tamb=25) 2. COLLECTOR Collector current 3 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP ... | Original |
1 pages, |
2SD886 2SD886 abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SA1627 2SA1627 TRANSISTOR (PNP) TO-126C FEATURES Power dissipation PCM : 1.25 W (Tamb=25) 1. EMITTER Collector current : -1 A ICM Collector-base voltage V V(BR)CBO : -600 Operating and storage junction temperature range 2. COLLECTOR 3. BASE 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP ... | Original |
2 pages, |
TO-126C pnp transistor 600V pnp 600v 1a 2sa1627 2SA1627 2SA1627 abstract |
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| 800 3 8 TO-126-(C77) BUH50 BUH50 BUH50 BUH50 50 800 4 8 TO-220 BUH100 BUH100 BUH100 BUH100 100 700 10 20 TO-220 BUH150 BUH150 BUH150 BUH150 150 700 15 25 TO www.datasheetarchive.com/files/motorola/design-n/ppd/html/psvol2-1/art04.htm |
Motorola | 25/11/1996 | 4.22 Kb | HTM | art04.htm |