TN0520 TN0524 TN0520N2 TN0520N3 TN0520ND TN0524N2 TN0524N3 TN0524ND

TN0524 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS

TN0520 TN0520 TN0524 TN0524 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS ID(ON) (min) VGS(th) (max) TO-39 TO-92 DICE 200V 10 300mA 1.5V TN0520N2 TN0520N2 TN0520N3 TN0520N3 TN0520ND TN0520ND 240V RDS(ON) (max) 10 300mA 1.5V TN0524N2 TN0524N2 TN0524N3 TN0524N3 TN0524ND TN0524ND 7 MIL visual screening available High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Features s Low threshold -1.5V max. s High input impedance s Low input capacitance - 45 pF typical s Fast switching speeds s Low on resistance Supertex vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. s Free from secondary breakdown s Low input and output leakage s Complementary N- and P-channel devices Package Options Applications s Logic level interface ideal for TTL and CMOS s Solid state relays s Battery operated systems s Photo voltaic drive s Analog switches s General purpose line driver s Telecom switches TO-39 Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage TO-92 ± 20V Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. -55°C to +150°C Note: See Package Outline section for discrete pinouts. 300°C 7-19 TN0520/TN0524 TN0520/TN0524 Thermal Characteristics Package TO-39 0.7A 1.5A TO-92 0.3A 1.0A °C/W ja IDR* IDRM 35 125 0.7A 1.5A 1.0W ID (pulsed) °C/W 3.5W ID (continuous)* jc 125 170 0.3A 1.0A Power Dissipation @ TC = 25°C * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min Drain-to-Source Breakdown Voltage BVDSS TN0524 TN0524 Max Unit 240 TN0520 TN0520 Typ 200 Conditions Gate Threshold Voltage V GS(th) Change in VGS(th) with Temperature IGSS Gate Body Leakage IDSS 1.5 0.6 Zero Gate Voltage Drain Current -3.0 VGS= 0, ID =1mA V VGS = VDS, ID = 1.0mA -4.0 mV/°C VGS = VDS, ID = 1.0mA 100 VGS(th) V nA 10 VGS = 0, VDS = Max Rating µA ID(ON) ON-State Drain Current 360 RDS(ON) Static Drain-to-Source ON-State Resistance 9.0 15 7.0 10 RDS(ON) Change in RDS(ON) with Temperature 0.9 1.5 GFS Forward Transconductance CISS Input Capacitance 45 60 COSS Common Source Output Capacitance 15 35 CRSS Reverse Transfer Capacitance 3.0 8.0 td(ON) Turn-ON Delay Time 3.0 5.0 tr Rise Time 3.0 5.0 td(OFF) Turn-OFF Delay Time 5.0 10 tf Fall Time 3.0 9.0 VSD Diode Forward Voltage Drop 1.1 2.5 trr Reverse Recovery Time 400 VGS = 3V, VDS = 25V 850 0.15 VGS = 5V, VDS = 25V VGS = 3V, ID = 50mA VGS = 5V, ID = 100mA %/°C VGS = 5V, ID = 0.2A 300 VDS = 0, VGS = 0.8 Max Rating TA = 125°C mA 500 100 VGS = ±20V, VDS = 0 VDS = 25V, ID = 0.2A pF VGS = 0, VDS = 25V f = 1 MHz ns 0.35 VDD = 25V ID = 0.3A RGEN = 25 V VGS = 0, ISD = 100mA ns VGS = 0, ISD = 100mA Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. VDD Switching Waveforms and Test Circuit RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) t(OFF) tr td(OFF) OUTPUT Rgen tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 7-20 TN0520/TN0524 TN0520/TN0524 Typical Performance Curves Output Characteristics Saturation Characteristics 2.0 1.0 VGS = 10V 1.6 6V 0.8 4V 1.2 ID (amperes) ID (amperes) VGS = 10V 6V 0.8 0.6 0.4 4V 0.4 0.2 2V 2V 0 0 0 20 40 60 80 100 0 2 4 6 8 10 VDS (volts) VDS (volts) Transconductance vs. Drain Current Power Dissipation vs. Case Temperature 0.5 7 5 TA = -55°C 0.4 4 TA = 25°C 0.3 0.2 PD (watts) GFS (siemens) TO-39 TA = 150°C 3 2 TO-92 0.1 1 VDS = 25V 0 0 0 0.4 0.2 0.6 0.8 1.0 0 50 25 150 1.0 Thermal Resistance (normalized) TO-92 (pulsed) TO-39 (DC) ID (amperes) 125 Thermal Response Characteristics Maximum Rated Safe Operating Area 1.0 0.1 TO-92 (DC) 0.01 TC = 25°C 0.001 10 100 TC (° C) ID (amperes) 1 75 100 0.8 0.6 0.4 0.2 0 0.001 1000 VDS (volts) TO-39 PD = 3.5W TC = 25°C 0.01 0.1 tp (seconds) 7-21 1.0 10 TN0520/TN0524 TN0520/TN0524 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 1.20 20 1.14 16 RDS(ON) (ohms) 1.08 1.02 0.96 VGS = 5V 12 8 4 0.90 0 -50 0 50 100 0 150 0.2 0.4 Tj (° C) 0.6 0.8 1.0 ID (amperes) Transfer Characteristics V(th) and RDS Variation with Temperature 1.5 2.4 VDS = 25V TA = 25° C 1.6 2.0 VGS(th) (normalized) 1.2 ID (amperes) TA = -55 ° C 0.9 TA =125 ° C 0.6 R DS(ON) @ 5V, 0.1A 1.4 1.6 1.2 V(th) @ 1.0mA 1.2 1.0 0.8 0.3 0.8 0 0.4 0 0 2 4 6 8 10 -50 0 50 100 Tj (° C) VGS (volts) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 100 10 f = 1MHz VDS = 10V 8 VDS = 40V VGS (volts) 75 C (picofarads) 150 CISS 50 6 125 pF 4 25 2 COSS CRSS 50pF 0 0 0 10 20 30 40 0 0.4 0.8 1.2 QG (nanocoulombs) VDS (volts) 7-22 1.6 2 RDS(ON) (normalized) BVDSS (normalized) V GS = 3V