TMM2018AP-45 Datasheet, Circuit, PDF, Cross Reference, & Application Note Results |
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First line: AZ21 TOSHIBA TMM2018AP-25. TMM2018AP-35, TMM2018AP-45 iDESCRIPTIONl TMM2018AP 16,384 bits high speed power static random access memory organized 2,048 words bits operates from single supply. Toshiba's high performance device technology provides both high speed power features with maximum access time Abstract: .. TOSHIBA MOS TMM2018AP-25 TMM2018AP-25 . TMM2018AP-35 TMM2018AP-35 , TMM2018AP-45 iDESCRIPTIONl The TMM2018AP TMM2018AP is a 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and .. Tags: AZ21 datasheet abstract.. |
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First line: mmvm TMM2018AP-25, TMM2018AP-35, TMM2018AP-45 [description! TMM2018AP 16,384 bits high speed power static random access memory organized 2,048 words bits operates from single supply. Toshiba's high performance device technology provides both high speed power features with maximum access time 25ns/35 Abstract: .. mmvm TMM2018AP-25 TMM2018AP-25 , TMM2018AP-35 TMM2018AP-35 , TMM2018AP-45 [description! The TMM2018AP TMM2018AP is a 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates .. Tags: datasheet abstract.. |
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First line: CMOS Static (2048x8) 24PIN 6117 [*typ] TAAC (ns) TCAC (ns) (ns) (ns) (ns) (ns) (ns) (ns) (ns) STANDBY SB/1 SB2) (pF) VOL/ (V/mA) V0H/ (V/mA) (pF) MB8417-20 FUJITSU 5-5. 4/4.0 4/1.0 MB8417-20L FUJITSU -40-85 5-5. 4/4. 4/1.0 MB8417A-12 FUJITSU 0.4/4 2.4/1 MB8417A-12L FUJITSU 4/4. 4/1.0 MB8417A-15 FUJI Abstract: .. 5 135 20/40 0.8 2.0 5 0. 4/8 2. 4/4.0 10 TMM2018AP-45 TOSHIBA 0-70 45 45 20 5 35 20 0 0 0 4.5—5. 5 135 20/40 0.8 2.0 5 0.4/8 2. 4/4.0 10 Z5516AP Z5516AP 21 LOG -30—85 250 100 10 80 200 120 0 4.5-5. 5 70 0. 03/- 0.8 .. Tags: datasheet abstract.. |
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| Specsheet Results |
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TMM2018AP45 |
Toshiba |
General-Purpose Static RAM - Asych., TTL compatible I/O |
Specification |
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