TLP521-1 TLP521-2 TLP521-4 11-5B2 UL1577 E67349 E152349 11-10C4 11-20A3 TLP521

TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TLP521-1,TLP521-2,TLP521-4 - - - Programmable Controllers AC/DC-Input

TLP521-1 TLP521-1,TLP521-2 TLP521-2,TLP521-4 TLP521-4 TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TLP521-1 TLP521-1,TLP521-2 TLP521-2,TLP521-4 TLP521-4 - - - Programmable Controllers AC/DC-Input Module Solid State Relay Unit in mm The TOSHIBA TLP521-1 TLP521-1, -2 and -4 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP521-2 TLP521-2 offers two isolated channels in an eight lead plastic DIP package, while the TLP521-4 TLP521-4 provides four isolated channels in a sixteen plastic DIP package. · Collector-emitter voltage: 55 V (min) · Current transfer ratio: 50% (min) TOSHIBA 11-5B2 11-5B2 Weight: 0.26 g Rank GB: 100% (min) · Isolation voltage: 2500 Vrms (min) · UL recognized made in Japan: UL1577 UL1577, file No. E67349 E67349 made in Thailand: UL1577 UL1577, file No. E152349 E152349 Pin Configurations (top view) TLP521-2 TLP521-2 TLP521-1 TLP521-1 TLP521-4 TLP521-4 1 4 1 8 1 16 2 3 2 7 2 15 3 6 3 14 4 5 4 13 5 12 6 11 7 10 8 9 TOSHIBA 11-10C4 11-10C4 Weight: 0.54 g 1 : Anode 2 : Cathode 3 : Emitter 4 : Collector 1, 3 : Anode 2, 4 : Cathode 5, 7 : Emitter 6, 8 : Collector : Anode 1, 3, 5, 7 : Cathode 2, 4, 6, 8 9, 11, 13, 15 : Emitter 10, 12, 14, 16 : Collector 1 TOSHIBA 11-20A3 11-20A3 Weight: 1.1 g 2002-09-25 TLP521-1 TLP521-1,TLP521-2 TLP521-2,TLP521-4 TLP521-4 Maximum Ratings (Ta = 25°C) Rating Characteristic Forward current LED Forward current derating Symbol TLP521-1 TLP521-1 TLP521-2 TLP521-2 TLP521-4 TLP521-4 Unit IF 70 50 mA IF /°C -0.93 (Ta 50°C) -0.5 (Ta 25°C) mA /°C IFP 1 (100µ pulse, 100pps) A Reverse voltage VR 5 V Junction temperature Tj 125 °C Collector-emitter voltage VCEO 55 V Emitter-collector valtage Detector Pulse forward current VECO 7 V Collector current IC 50 mA Collector power dissipation (1 circuit) PC 150 100 mW PC /°C -1.5 -1.0 mW /°C Collector power dissipation derating (1 circuit Ta 25°C) Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C Operating temperature range Topr -55~100 °C Lead soldering temperature Tsol 260 (10 s) °C Total package power dissipation PT 250 150 mW Total package power dissipation derating (Ta 25°C) PT /°C -2.5 -1.5 mW /°C Isolation voltage BVS 2500 (AC, 1min., R.H. 60%) (Note 1) Vrms (Note 1): Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage VCC 5 24 V Forward current IF 16 25 mA Collector current IC 1 10 mA Topr -25 85 °C Operating temperature 2 2002-09-25 TLP521-1 TLP521-1,TLP521-2 TLP521-2,TLP521-4 TLP521-4 Type Classification (*1) Current Transfer Ratio (%) (IC / IF) IF = 5mA, VCE = 5V, Ta = 25°C Min Max Marking Of Classification A Blank, Y, Y, G, G, B, B, GB 50 150 Y, Y Rank GR 100 300 G, G Rank BL 200 600 B, B Rank GB TLP521-2 TLP521-2 TLP521-4 TLP521-4 600 Rank Y TLP521 TLP521 50 100 600 G, G, B, B, GB A 50 600 Blank, GR, BL, GB Rank GB 100 600 GR, BL, GB *1: Ex. rank GB: TLP521-1 TLP521-1 (GB) (Note): Application type name for certification test, please use standard product type name, i.e. TLP521-1 TLP521-1 (GB): TLP521-1 TLP521-1, TLP521-2 TLP521-2 (GB): TLP521-2 TLP521-2 3 2002-09-25 TLP521-1 TLP521-1,TLP521-2 TLP521-2,TLP521-4 TLP521-4 Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V - - 10 µA Capacitance LED Forward voltage CT V = 0, f = 1 MHz - 30 - pF Detector Collector-emitter breakdown voltage V(BR) CEO IC = 0.5 mA 55 - - V Emitter-collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 - - V VCE = 24 V - 10 100 nA VCE = 24 V, Ta = 85°C - 2 50 µA V = 0, f = 1 MHz - 10 - pF MIn Typ. Max Unit 50 - 600 100 - 600 Collector dark current ICEO Capacitance (collector to emitter) CCE Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Symbol IC / IF Test Condition IF = 5 mA, VCE = 5 V Rank GB % Collector-emitter saturation voltage IC / IF (sat) VCE (sat) IF = 1 mA, VCE = 0.4 V Rank GB - 60 - 30 - - IC = 2.4 mA, IF = 8 mA Saturated CTR - - 0.4 IC = 0.2 mA, IF = 1 mA Rank GB - 0.2 - - - 0.4 Min Typ. Max Unit % V Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Capacitance (input to output) CS VS = 0, f = 1 MHz - 0.8 - pF Isolation resistance RS VS = 500 V, R.H. 60% - 1011 - 2500 - - AC, 1 second, in oil - 5000 - DC, 1 minute, in oil - 5000 - AC, 1 minute Isolation voltage BVS 4 Vrms Vdc 2002-09-25 TLP521-1 TLP521-1,TLP521-2 TLP521-2,TLP521-4 TLP521-4 Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time Test Condition Min Typ. Max - 2 - - 3 - - 3 - tr Fall time tf Turn-on time ton VCC = 10 V IC = 2 mA RL = 100 Turn-off time toff - 3 tON - 2 - Storage time ts - 15 - Turn-off time tOFF - 25 µs - Turn-on time Unit - Fig.1 : SWITCHING IF TIME RL = 1.9 k (Fig.1) VCC = 5 V, IF = 16 mA µs TEST CIRCUIT IF RL VCC tS VCE tON VCE 5 4.5V 0.5V VCC tOFF 2002-09-25 TLP521-1 TLP521-1,TLP521-2 TLP521-2,TLP521-4 TLP521-4 IF Ta TLP521-1 TLP521-1 100 80 TLP521-2 TLP521-2 TLP521-4 TLP521-4 60 40 20 60 40 20 0 -20 0 20 40 60 0 -20 100 80 0 Ambient temperature Ta (°C) 240 20 120 80 100 80 60 TLP521-2 TLP521-2 TLP521-4 TLP521-4 100 PC Ta 100 Allowable collector power dissipation PC (mW) 200 160 120 80 80 60 40 20 40 0 -20 0 20 40 60 80 0 -20 100 0 IFP DR TLP521-1 TLP521-1 3000 20 3000 Pulse width 100µs TLP521-2 TLP521-2 TLP521-4 TLP521-4 Pulse width 100µs Ta = 25°C Allowable pulse forward current IFP (mA) 1000 500 300 100 50 30 10-3 3 10-2 3 60 IFP DR Ta = 25°C 10 3 40 Ambient temperature Ta (°C) Ambient temperature Ta (°C) Allowable pulse forward current IFP (mA) 40 Ambient temperature Ta (°C) PC Ta TLP521-1 TLP521-1 Allowable collector power dissipation PC (mW) IF Ta 80 Allowable forward current IF (mA) Allowable forward current IF (mA) 100 10-1 3 1000 500 300 100 50 30 10 3 100 Duty cycle ratio DR 10-3 3 10-2 3 10-1 3 100 Duty cycle ratio DR 6 2002-09-25 TLP521-1 TLP521-1,TLP521-2 TLP521-2,TLP521-4 TLP521-4 100 VF/Ta IF IF VF Ta=25°C -2.8 Forward voltage temperature coefficient VF/Ta (mV/°C) 50 Forward current IF (mA) 30 10 5 3 1 0.5 0.1 0.4 0.8 0.6 1.0 Forward voltage 1.4 1.2 VF 0.3 (V) 1 10 (µA) 100 50 30 10 5 3 10 10 10 10 10 0.8 1.2 1.6 2.0 Pulse forward voltage VFP 0 -1 -2 -3 -4 2.4 0 80 40 (V) IC VCE 50mA (mA) Collector current Collector current 30mA 20mA 15mA PC(MAX.) 10mA 20 IF=5mA 4 40mA 30mA 20 20mA 15 10mA 10 Ta=25°C 5mA IC 50mA IC (mA) 60 2 160 120 Ambient temperature Ta () Ta=25°C 0 10V 5V VCE=24V 25 0 IF (mA) 1 IC VCE 80 40 30 10 ICEO Ta 500 Repetitive frequency =100Hz 300 Ta = 25°C 0.4 3 Forward current Collector dark current ICEO (mA) -1.2 -0.4 0.1 1.6 Pulse width 10µs IFP -1.6 IFP VFP 1000 Pulse forward current -2.0 -0.8 0.3 1 0 -2.4 8 6 Collector-emitter voltage VCE 5 0 0 10 (V) IF=2mA 0.2 0.4 0.6 0.8 Collector-emitter voltage 7 1.0 VCE 1.2 1.4 (V) 2002-09-25 TLP521-1 TLP521-1,TLP521-2 TLP521-2,TLP521-4 TLP521-4 IC IF 100 300 Collector current Current transfer ratio IC /IF (%) IC (mA) 30 10 Sample IC/IF IF 500 Ta = 25°C VCE=5V 50 VCE=0.4V A 5 3 Sample B Sample 100 Sample 30 Ta = 25°C VCE=5V VCE=0.4V 5 0.3 1 3 0.5 IF 30 100 (mA) VCE(sat) Ta 0.20 Collector-emitter saturation voltage VCE(sat) (V) 0.1 0.05 0.03 0.3 3 1 10 Forward current IF 30 100 (mA) IF = 5mA IC = 1mA 0.16 0.12 0.08 0.04 0 -20 0 100 1000 500 10mA 300 (µs) 3 1mA IF = 0.5mA 50 tS 30 10 5 0.3 3 0 20 100 100 Switching time 5 -20 80 tOFF 10 0.5 60 Ta = 25°C IF = 16mA VCC= 5V 5mA 1 40 RL Switching Time VCE = 5V 25mA 50 30 20 Ambient temperature Ta () IC Ta IC (mA) 10 Forward current 0.3 Collector current B 50 10 1 0.1 A 40 60 80 1 1 100 tON 3 10 30 100 300 Load resistance RL (k) Ambient temperature Ta () 8 2002-09-25 TLP521-1 TLP521-1,TLP521-2 TLP521-2,TLP521-4 TLP521-4 RESTRICTIONS ON PRODUCT USE 000707EBC 000707EBC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. · Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 9 2002-09-25