TLP421 UL1577 EN60065 11-5B2 EN60950 EN60335 VDE0884 R9950202 890VPK 8000VPK - Datasheet Archive

 

TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TLP421 Unit in mm Office Equipment Household Appliances Solid State Relays

 

TLP421 TLP421 TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TLP421 TLP421 Unit in mm Office Equipment Household Appliances Solid State Relays Switching Power Supplies Various Controllers Signal Transmission Between Different Voltage Circuits The TOSHIBA TLP421 TLP421 consists of a silicone photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage (AC: 5kVRMS (min). · Collector-emitter voltage: 80V (min.) · Current transfer ratio: 50% (min.) TOSHIBA Rank GB: 100% (min.) Weight: 0.26 g · Isolation voltage: 5000Vrms (min.) · UL recognized: UL1577 UL1577 Pin Configurations · BSI approved: BS EN60065 EN60065: 1994 (top view) 11-5B2 11-5B2 Approved no.8411 BS EN60950 EN60950: 1992 1 · SEMKO approved: EN60065 EN60065, EN60950 EN60950, EN60335 EN60335 4 2 Approved no.8412 3 Approved no.9910249/01 1 : Anode 2 : Cathode 3 : Emitter 4 : Collector 1 2002-09-25 TLP421 TLP421 · Option(D4)type TÜV approved: DIN VDE0884 VDE0884 Approved no.R9950202 R9950202 Maximum operating insulation voltage: 890VPK 890VPK Maximu permissible overvoltage: 8000VPK 8000VPK (Note): When a VDE0884 VDE0884 approved type is needed, please designate the "Option(D4)" Making the VDE applocation: DIN VDE0884 VDE0884 · Construction mechanical rating 7.62mm Pich Typical Type Creepage distance 10.16mm Pich TLPxxxF Type 7.0mm(min) 8.0mm(min) Clearance 7.0mm(min) 8.0mm(min) Insulation thickness 0.4mm(min) 0.4mm(min) Current Transfer Ratio Type Classification (*1) Current Transfer Ratio (%) (IC / IF) IF = 5mA, VCE = 5V, Ta = 25°C Min Max Marking Of Classification (None) 600 Blank, Y, Y+, G, G+, B, B+, GB Rank Y 50 150 Y, Y+ Rank GR 100 300 G, G+ Rank BL 200 600 B, B+ Rank GB TLP421 TLP421 50 100 600 G, G+, B, B+, GB (*1): Ex. rank GB: TLP421 TLP421 (GB) (Note): Application type name for certification test, please use standard product type name, i. e. TLP421 TLP421 (GB): TLP421 TLP421 2 2002-09-25 TLP421 TLP421 Maximum Ratings (Ta = 25°C) Characteristic Stmbol Rating IF 60 mA IF / °C -0.7 mA / °C IFP 1 A PD 100 mW PD / °C -1.0 mW / °C Reverse voltage VR 5 V Junction temperature Tj 125 °C Collector-emitter voltage VCEO 80 V Emitter-collector voltage VECO 7 V Collector current IC 50 mA Power dissipation(single circuit) PC 150 mW PC / °C -1.5 mW / °C Tj 125 °C Operating temperature range Topr -55~100 °C Storage temperature range Tstg -55~125 °C Lead soldering temperature (10s) Tsol 260 °C Total package power dissipation PT 250 mW PT / °C -2.5 mW / °C BVS 5000 Vrms Forward current Forward current derating(Ta 39°C) LED Pulse forward current (Note 2) Power dissipation Detector Power dissipation derating Power dissipation derating (Ta 25°C)(single circuit) Junction temperature Total package power dissipation derating (Ta 25°C) Isolation voltage (Note 3) Unit (Note 2): 100µs pulse, 100Hz frequency (Note 3): AC, 1 min., R.H. 60%. Apply voltage to LED pin and detector pin together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage VCC 5 24 V Forward current IF 16 25 mA Collector current IC 1 10 mA Topr -25 85 °C Operating temperature 3 2002-09-25 TLP421 TLP421 Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit VF IF = 10 mA 1.0 1.2 1.3 V Reverse current IR VR = 5 V 10 µA Capacitance LED Forward voltage CT V = 0, f = 1 MHz 30 pF Detector Collector-emitter breakdown voltage V(BR) CEO IC = 0.5 mA 80 V Emitter-collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 V VCE = 24 V (ambient light below 1000 x) 0.01 (0.1) 0.1 (10) µA VCE = 24 V (ambient light Ta = 85°C below 1000 x) 0.6 (1) 50 (50) µA V = 0, f = 1 MHz 10 pF MIn Typ. Max Unit 50 600 100 600 60 30 Collector dark current Capacitance (collector to emitter) ID(ICEO) CCE Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Saturated CTR Symbol IC / IF IC / IF (sat) Test Condition IF = 5 mA, VCE = 5 V IF = 1 mA, VCE = 0.4 V Rank GB Rank GB % % IC = 2.4 mA, IF = 8 mA Collector-emitter saturation voltage VCE (sat) 0.4 IC = 0.2 mA, IF = 1 mA 0.2 0.4 Min Typ. Max Unit 0.8 pF 1×1012 1014 5000 AC, 1 second, in oil 10000 DC, 1 minute, in oil 10000 Rank GB V Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Capacitance (input to output) CS VS = 0, f = 1 MHz Isolation resistance RS VS = 500 V AC, 1 minute Isolation voltage BVS 4 Vrms Vdc 2002-09-25 TLP421 TLP421 Switching Characteristics (Ta = 25°C) Characteristics Symbol Rise time tf Min Turn-on time ton Max 2 3 VCC = 10 V, IC = 2 mA RL = 100 Typ. tr Fall time Test Condition 3 Turn-off time toff 3 tON 2 Storage time ts 25 Turn-off time tOFF 50 µs Turn-on time Unit RL = 1.9 k VCC = 5 V, IF = 16 mA (Fig.1) µs IF IF RL VCC ts VCE VCC 4.5V VCE tON 0.5V tOFF Fig.1 Switching time test circuit 5 2002-09-25 TLP421 TLP421 IF ­ Ta PC ­ Ta 160 Allowable collector power dissipation PC (mW) 200 80 Allowable forward current IF (mA) 100 60 40 20 0 -20 120 80 40 0 20 40 60 80 100 0 -20 120 0 Ambient temperature Ta () 20 40 IFP ­ DR (mA) (mA) Forward current IF IFP Pulse forward current 100 0.01 0.1 10 1 0.1 0.4 1 VF / Ta ­ 0.8 0.6 1.0 Forward voltage Duty cycle ratio DR IF 1000 1.4 VF 1.6 2.0 1.2 2.4 (V) IFP ­ VFP Pulse width 10µs (mA) -2.2 IFP Repetitive -2.6 Pulse forward current Forword voltage temperature coefficent VF / Ta (mV / ) 120 IF ­ VF 100 1000 -3.0 100 80 Ambient temperature Ta () 3000 10 0.001 60 -1.8 -1.4 -1.0 -0.6 0.1 1 Forward current 10 frequency=100Hz Ta = 25 100 10 1 0 100 0.4 0.8 1.2 1.6 Pulse forward voltage VFP IF (mA) 6 (V) 2002-09-25 TLP421 TLP421 ID ­ Ta IC ­ VCE 80 (mA) 1 10 5 001 0.001 0.0001 0 40 20 60 30 20 15 IC VCE=24 V 0.1 Collector current Collector dark current IC (µA) 10 80 60 50 10 40 IF=5mA 20 0 100 0 2 4 Ambient temperature Ta () IC ­ VCE 30 30 50 VCE 10 (V) IC ­ IF 100 20 8 6 Collector-emitter voltage 10 20 10 (mA) 5 IF= 2 mA 0 0 Sample A IC 10 Collector current Collector current IC (mA) 40 0.2 0.4 0.6 0.8 Collector-emitter voltage VCE 1.0 1.2 Sample B 1 (V) 0.1 IC /IF ­ IF 1000 (%) Ta = 25°C VCE = 5V VCE = 0.4V Current transfer ratio IC / IF Sample A 0.01 0.1 100 Sample 10 IF 100 (mA) B Ta = 25°C VCE = 5V VCE = 0.4V 10 3 0.1 1 Forward current 1 Forward current 10 IF 100 (mA) 7 2002-09-25 TLP421 TLP421 IC ­ Ta 100 VCE(sat) ­ Ta 0.20 IF = 5 mA IC = 1 mA 10 Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 25 5 10 1 1 IF = 0.5 mA VCE = 5V 0.1 -20 20 0 40 60 80 0.16 0.12 0.08 0.04 0 -20 100 0 20 40 60 80 100 Ambient temperature Ta () Ambient temperature Ta () Switching Time ­ RL 1000 Ta = 25°C IF = 16mA VCC = 5V tOFF (µs) 100 Switching time tS 10 tON 1 1 10 100 Load resistance RL (k) 8 2002-09-25 TLP421 TLP421 RESTRICTIONS ON PRODUCT USE 000707EBC 000707EBC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. · Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 9 2002-09-25