TLAD0110G OC-192/STM-64 LM4040 TLAD0110G51 30L-15P-BA DS01-050HSPL - Datasheet Archive

 

February 2001 TLAD0110G 10 Gbits/s Laser Driver Features I I 100 mA current drive capability (20 load) Patent pending active

 

Preliminary Data Sheet February 2001 TLAD0110G TLAD0110G 10 Gbits/s Laser Driver Features I I 100 mA current drive capability (20 load) Patent pending active termination output buffer to reduce power dissipation I Differential data inputs I Single ­5.2 V power supply I 30 ps rise and fall times I 2.2 ps rms jitter I Available in die form Applications I SONET/SDH OC-192/STM-64 OC-192/STM-64 transmission systems I Optical transmitters I Digital video transmission I SONET/SDH test equipment I FEC 10.666 Gbits/s I 10G Ethernet 10.3125 Gbits/s Functional Description The TLAD0110G TLAD0110G is intended to drive direct modulated lasers at speeds up to 10.7 Gbits/s. The driver consists of an input level translator and limiting amplifier, followed by a pulse width control circuit and dual output buffers with adjustable modulation current. The TLAD0110G TLAD0110G also contains an adjustable bias current generator that can supply up to 120 mA of laser bias current. The two output buffers can be combined to drive up to 100 mA into a 20 to 25 load. Alternatively, one buffer can be used to drive up to 50 mA into a 40 to 50 load. In the latter case, the unused output buffer is disabled to save power. Each output buffer provides an active 50 back termination that can absorb reflections and thus prevent jitter and overshoot. An external op amp is used to track the voltage drop across the laser and to allow dc coupling to the laser without excess loading of the laser bias circuit. On-die sense resistors allow monitoring of both modulation and bias currents and can be employed as part of an external control loop. The driver provides a connection for an external 2.5 V band-gap reference to stabilize operation over temperature and supply range. 2 2 k OPTIONAL PULSE WIDTH CONTROL CIRCUIT VSS VDD0 MODN2 30 CMO 12 CMN ­ MOD2 CMP 11 6 VDD2 VDD0 NC 6 VDD2 DIE SIZE: 2.100 x 1.225 mm 10 9 8 MOD1 NC 7 30 50 VDD2 6 DINN 5 MODN1 VDD2 4 3 50 DINP 3 VDD0 VDD2 2 CHIP BACKSIDE 25 VDD0 24 26 28/27 MODND2 29 30 MODR2 31 32 MODR1 33 35/34 MODND1 36 37 VDD0 38 VMOD 23 30 MODSEN 22 30 VBIAS VSS2 21 39 BIAS BIAS NC BIASSEN VSS 20 VSS VSS VTHND VTHD 1 MODDIS PWP PWN NC VDD2 BG2P5 13 19 18 17 14 15 16 + 40 41 42 43 44 45 46 TLAD0110G TLAD0110G 10 Gbits/s Laser Driver Preliminary Data Sheet February 2001 Functional Diagram 1076 (F) Figure 1. TLAD Die Functional Diagram and Pad Configuration Agere Systems Inc. Preliminary Data Sheet February 2001 TLAD0110G TLAD0110G 10 Gbits/s Laser Driver Pin Information Table 1. Pad Descriptions Pad Symbol Function Range of Operation1 1 VTHD ­3.8 V VTHD ­4.0 V 2, 4, 6, 8, 10, 15 VDD2 Data Input Threshold Bypass Ground 24, 25, 31, 37, 38 VDD0 Ground - 3 5 DINP DINN See Table 4 See Table 4 7, 9, 14, 41 11 NC Data Input Complementary Data Input No Connect - - Common Mode ­0.7 V CMP ­2.1 V Positive 12 CMN Common Mode ­0.7 V CMN ­2.1 V Negative 13 CMO Common Mode 0 V CMO ­1.0 V Output 16 BG2P5 ­2.5 V Band-gap ­2.5 V (see National Semiconductor Reference LM4040 LM4040 data sheet) 17 PWN Pulse Width Adjust VSS < PWN < VSS + 2.0 V Negative 18 PWP Pulse Width Adjust VSS < PWP < VSS + 2.0 V Positive 19 MODDIS Modulation Disable Enable = VSS MODDIS (VSS + 0.2 V) Disable = ­1.2 V MODDIS ­0.9 V 20, 44, VSS VSS Power Supply VSS = ­5.2 V 45 Power Supply For VSS2 = VSS = ­5.2 V 21 VSS2 One Half Of The Output Stage 22 MODSEN Modulation Current VSS + (IMOD x RMOD) Monitor CMP 23 VMOD 26 MODN2 Modulation Current Control No Connect VSS < VMOD < (VSS + 1.0 V) - Note 0.1 µF bypass to ground. Ground pads are tied to the die backside through the substrate. The die backside must be electrically connected to ground. Ground pads are tied to the die backside through the substrate. The die backside must be electrically connected to ground. ac couple or dc couple. ac couple or dc couple. Do not connect. Connect to positive input of external op amp. Connect to negative input of external op amp. Connect to output of external op amp. Connect to anode of external ­2.5 V band-gap reference. See Figure 1 for application drawing of how to use 2 k pot. See Figure 1 for application drawing of how to use 2 k pot. - - Supplies power for MOD2. Internal 3 resistor (two parallel 6 resistors) to VSS. Used to monitor modulation current. Output modulation control. Do not connect. 1. Range of operation column represents the typical value that can be expected on each pin during operation. 2. For a load consisting of a laser diode with a 15 series resistor, combine pads 29 and 33 as the data output pads. Pads 29 and 33 must be bonded to the 15 series resistor on the optical subassembly. 3. If there is not a 15 resistor in series with the laser diode on the optical subassembly, combine pads 30 and 32 as the data output pads. Pads 30 and 32 must be bonded to the laser diode cathode. 4. Pad 39 or 40 must be connected to the laser diode cathode through an inductive choke. Agere Systems Inc. 3 Preliminary Data Sheet February 2001 TLAD0110G TLAD0110G 10 Gbits/s Laser Driver Pin Information (continued) Table 1. Pad Descriptions (continued) Pad Symbol 27,28 MODND2 29 30 MOD2 MODR2 32 MODR1 33 MOD1 34/35 MODND1 36 39/40 MODN1 BIAS 42 VBIAS 43 BIASSEN 46 VTHND Function Range of Operation1 Complementary Data Output Data Output Data Output with 30 Series Resistor Data Output with 30 Series Resistor Data Output Complementary Data Output No Connect Laser Prebias Current Laser Prebias Current Control Laser Prebias Current Monitor Ground Complementary Data Input Threshold Bypass ­0.7 V MOD1 ­3.5 V ­0.7 V MODR2 ­3.5 V ­0.7 V MODR1 ­3.5 V ­0.7 V MOD1 ­3.5 V Ground - 0 V< BIAS < 2.0 V VSS < VBIAS < VSS + 2.2 VSS + (IBIAS X RBIAS) ­3.8 V VTHD ­4.0 V Note Connect to same ground as laser anode. -2 -3 -3 -2 Connect to same ground as laser anode. Do not connect. -4 Output prebias control. Internal 3 resistor to VSS. Used to monitor prebias current. 0.1 µF bypass to ground. 1. Range of operation column represents the typical value that can be expected on each pin during operation. 2. For a load consisting of a laser diode with a 15 series resistor, combine pads 29 and 33 as the data output pads. Pads 29 and 33 must be bonded to the 15 series resistor on the optical subassembly. 3. If there is not a 15 resistor in series with the laser diode on the optical subassembly, combine pads 30 and 32 as the data output pads. Pads 30 and 32 must be bonded to the laser diode cathode. 4. Pad 39 or 40 must be connected to the laser diode cathode through an inductive choke. 4 Agere Systems Inc. Preliminary Data Sheet February 2001 TLAD0110G TLAD0110G 10 Gbits/s Laser Driver Pad Information (continued) 2100 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 75 x 75 35 PADS 17 1 46 SD3B 18 45 CHIP INDENT NUMBER 19 44 43 1225 20 CENTER OF CHIP 0, 0 21 7 PADS 112.5 x 112.5 22 42 1 PAD 200 x 112.5 41 23 40 39 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 1077.a (F) Figure 2. Die Pad Configuration Table 2. Die Pad Coordinates Pad Symbol 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Coordinates (X, Y) Pad Symbol Coordinates (X, Y) Pad Symbol Coordinates (X, Y) 937, 500 812, 500 687, 500 562, 500 437, 500 312, 500 187, 500 62, 500 ­62, 500 ­187, 500 ­312, 500 ­437, 500 ­562, 500 ­687, 500 ­812, 500 ­937, 500 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 PWN PWP MODDIS VSS VSS2 MODSEN VMOD VDD0 VDD0 MODN2 MODND2 MODND2 MOD2 MODR2 VDD0 MODR1 ­937, 375 ­937, 250 ­937, 125 ­937, 0 ­937, ­125 ­937, ­250 ­937, ­375 ­937, ­500 ­806, ­481 ­675, ­481 ­494, ­481 ­494, ­481 ­344, ­481 ­194, ­481 ­62, ­481 69, ­481 33 34 35 36 37 38 39 40 41 42 43 44 45 46 MOD1 MODND1 MODND1 MODN1 VDD0 VDD0 BIAS BIAS NC VBIAS BIASSEN VSS VSS VTHDN 219, ­481 369, ­481 369, ­481 545, ­481 700, ­481 800, ­481 937, ­500 937, ­375 937, ­250 937, ­125 937, 0 937, 125 937, 250 937, 375 VTHD VDD2 DINP VDD2 DINN VDD2 NC VDD2 NC VDD2 CMP CMN CMO NC VDD2 BG2P5 Notes: All dimensions are reference dimensions and are in micrometers. Dimensions indicate the approximate opening in the Sincaps window. Pad coordinates reference the center of the opening in the Sincaps window. Agere Systems Inc. 5 Preliminary Data Sheet February 2001 TLAD0110G TLAD0110G 10 Gbits/s Laser Driver Absolute Maximum Ratings Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. Absolute Maximum Ratings1 Parameter Supply Voltage Input Voltage Power Dissipation Symbol Min Max Unit VSS VIN PD ­6 GND - 0.5 VSS 2 V V W 1. Long-term reliability is not guaranteed in a non-hermetic environment. Handling Precautions Although protection circuitry has been designed into this device, proper precautions should be taken to avoid exposure to electrostatic discharge (ESD) during handling and mounting. Agere Systems Inc. employs a human-body model (HBM) and a charged-device model (CDM) for ESD-susceptibility testing and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in the defined model. No industry-wide standard has been adopted for the CDM. However, a standard HBM (resistance = 1500 , capacitance = 100 pF) is widely used and, therefore, can be used for comparison purposes: Device Voltage TLAD0110G TLAD0110G TBD Die Attachment Typically these die are attached with conductive epoxy; this is what is recommended. If solder attachment is required, it is recommended to use an 80 Au/20 Sn solder preform. This preform does not require flux. This preform melts at 280 °C, but should soak at 305 °C for 5 to 8 seconds. A die scrub motion should be used when the preform melts to ensure good contact. This die is 100 µm thick and contains air bridges. Do not use vacuum tool to pick up, a collet tool is recommended instead. 6 Agere Systems Inc. Preliminary Data Sheet February 2001 TLAD0110G TLAD0110G 10 Gbits/s Laser Driver Electrical Characteristics Table 4. Electrical Characteristics T = 35 °C (chuck temperature at water test), RL = 25 (equivalent output load = 25 [each output has 50 load]), VSS = ­5.2 V, DINP = 400 mVp-p 231 ­ 1 PRBS, ac coupled, 9.95328 Gbits/s. The load used is 25 in series with 0.7 V, to simulate the laser turn on voltage.1 Parameter Symbol Conditions Min Typ Max Unit - NRZ - 9.95328 TBD Gbits/s VDINP, VDINN ac coupled, Singleended, Peak-to-peak 0.4 - 1 V Data Input High VINH dc coupled, 50 Differential Input ­150 0 0 mV Data Input Low VINL dc coupled, 50 Differential Input ­1000 ­800 ­600 mV Maximum Modulation Current for Direct Modulation (25 load) IMOD MOD_D = VSS 80 100 - mAp-p Minimum Modulation2 Current for Direct Modulation IMOD MOD_D = VSS - - 25 mAp-p MOD_D = FLOAT - - 7 Normal Operation VSS - VSS + 0.2, or resistance of external switch to VSS < 40 Disable Mode Leakage current of external switch to VSS < 10 µA Floating - 2.7 3.0 3.3 Data Rate Data Input Signal Modulation Disable Input MODDIS V Modulation Sensing Resistor MOD Rise/Fall Time RMOD - Tr/Tf 20% to 80% - 30 35 ps Pulse Width Control PWC - 80 - 120 % V Pulse Width Control Input PWP Pulse Width Positive VSS VSS + 1 VSS + 2 PWN Pulse Width Negative VSS VSS + 1 VSS + 2 MOD-OS For MOD > 25 mA ­10 - 10 % Data Input Return Loss S11 dc to 6 GHz 6 GHz to 12 GHz - - 12 10 - - dB Data Output Return Loss (See Figure 5) S22 dc to 6 GHz 6 GHz to 12 GHz - - 25 10 - - dB Maximum Bias Current IBIAS VBIAS = VSS + 2.2 V 100 120 - mA Minimum Bias Current IBIAS VBIAS = VSS - 0.3 1 mA Bias Sensing Resistor RBIAS - 2.7 3.0 3.3 ISSO VMODSEN = VSS, VBIAS = VSS - - 150 mA JITrms Maximum Modulation Current - 2.5 2.9 ps Modulation Current Overshoot Supply Overhead Current rms Jitter4 3 1. See Chip Visual Inspection Criteria section. 2. The remaining 7 mA of current in the disabled state can ve turned off by pulling down the data input signal to VSS (VTHDN = VSS). 3. Supply overhead current is equal to the total supply current, excluding modulation and bias current. 4. rms jitter is a wide bandwidth measurement that includes the data generator jitter and the measurement equipment jitter. Agere Systems Inc. 7 TLAD0110G TLAD0110G 10 Gbits/s Laser Driver Preliminary Data Sheet February 2001 Electrical Characteristics (continued) Chip Visual Inspection Criteria The chips will be visually free of the following defects, at 100x: I Scratches in the metallization (including air-bridges) that leave less than 50% of the original width undisturbed and distort the outline of the metal feature. I Voids or missing metallization that leave less than 50% of the original width undisturbed. I Extra metals that bridge adjacent same layer metal feature. This includes bond pads damaged from probing. I Crack or chip out that extends into the active area of the device. I Damaged air-bridges that have been distorted or torn off. I Particles on the surface of the chip that are large enough to bridge between bond pads. I Stains larger than the size of a bond pad. I Lifted or blistered metallization. I Missing nitride that occurs over or under an active feature. I 8 Defects to bond pad area: - Stains larger than 25% of bond pads. - Extra nitride on the bond pad that reduces the open area by more than 25%. - Probe damage that removes more than 25% of the bond pad. - Probe damage that causes cracks in the surrounding nitride of substrate. Agere Systems Inc. Preliminary Data Sheet February 2001 TLAD0110G TLAD0110G 10 Gbits/s Laser Driver Electrical Characteristics (continued) 100 100 90 BIAS (mA), PADS 39 AND 40 MOD (mA), PADS 29 AND 30 80 80 60 40 20 70 60 50 40 30 20 10 0 0.0 0.2 0.4 0.6 0.8 1.0 0 VMOD (V) PAD 23, REFERENCED FROM VSS 0.0 0.5 1.0 1.5 2.0 2.5 BIAS GATE (V), PAD 42. REFERENCED FROM VSS 1078 (F) 1079 (F) Figure 3. Modulated Output vs. Gate Voltage Figure 4. Laser Bias Current vs. Gate Voltage 0 ­5 ­10 S22(dB) ­15 ­20 ­25 ­30 ­35 ­40 0 2 4 6 8 10 12 14 16 FREQ. (GHz) NO BOND WIRE 0.4 nH 0.5 nH 1266(F) Figure 5. Output Return Loss Agere Systems Inc. 9 Preliminary Data Sheet February 2001 TLAD0110G TLAD0110G 10 Gbits/s Laser Driver Ordering Information Device Type Comcode TLAD0110G51 TLAD0110G51 Die Form 108558982 For additional information, contact your Agere Systems Account Manager or the following: INTERNET: http://www.agere.com E-MAIL: docmaster@micro.lucent.com N. AMERICA: Agere Systems Inc., 555 Union Boulevard, Room 30L-15P-BA 30L-15P-BA, Allentown, PA 18109-3286 1-800-372-2447, FAX 610-712-4106 (In CANADA: 1-800-553-2448, FAX 610-712-4106) ASIA PACIFIC: Agere Systems Singapore Pte. Ltd., 77 Science Park Drive, #03-18 Cintech III, Singapore 118256 Tel. (65) 778 8833, FAX (65) 777 7495 CHINA: Agere Systems (Shanghai) Co., Ltd., 33/F Jin Mao Tower, 88 Century Boulevard Pudong, Shanghai 200121 PRC Tel. (86) 21 50471212, FAX (86) 21 50472266 JAPAN: Agere Systems Japan Ltd., 7-18, Higashi-Gotanda 2-chome, Shinagawa-ku, Tokyo 141, Japan Tel. (81) 3 5421 1600, FAX (81) 3 5421 1700 EUROPE: Data Requests: DATALINE: Tel. (44) 7000 582 368, FAX (44) 1189 328 148 Technical Inquiries: GERMANY: (49) 89 95086 0 (Munich), UNITED KINGDOM: (44) 1344 865 900 (Ascot), FRANCE: (33) 1 40 83 68 00 (Paris), SWEDEN: (46) 8 594 607 00 (Stockholm), FINLAND: (358) 9 3507670 (Helsinki), ITALY: (39) 02 6608131 (Milan), SPAIN: (34) 1 807 1441 (Madrid) Agere Systems Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application. Copyright © 2000 Agere Systems Inc. All Rights Reserved Printed in U.S.A. February 2001 DS01-050HSPL DS01-050HSPL