NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
TISP4125F3 TISP4150F3 TISP4180F3 4125F3 4150F3 4180F3 PE-60 K17/K20 E132482 - Datasheet Archive
SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS Copyright © 1997, Power Innovations Limited, UK MARCH 1994 - REVISED SEPTEMBER
TISP4125F3 TISP4125F3, TISP4150F3 TISP4150F3, TISP4180F3 TISP4180F3 SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS Copyright © 1997, Power Innovations Limited, UK MARCH 1994 - REVISED SEPTEMBER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION q Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge D PACKAGE (TOP VIEW) T 1 8 R VDRM V(BO) T 2 7 R V V T 3 6 R `4125F3 4125F3 100 125 T 4 5 R `4150F3 4150F3 120 150 `4180F3 4180F3 145 180 DEVICE Specified ratings require the connection of pins 1, 2, 3 and 4 for the T terminal. q Planar Passivated Junctions Low Off-State Current < 10 µA q Rated for International Surge Wave Shapes SL PACKAGE (TOP VIEW) STANDARD 2/10 µs FCC Part 68 1 R 175 8/20 µs ANSI C62.41 2 120 10/160 µs FCC Part 68 60 A 10/560 µs FCC Part 68 45 0.5/700 µs RLM 88 FTZ R12 50 REA PE-60 PE-60 35 device symbol 50 CCITT IX K17/K20 K17/K20 MD4XAA 50 VDE 0433 MDXXAH 38 10/700 µs 10/1000 µs D PACKAGE T T 4 3 SL PACKAGE T 2 T 1 T 1 Surface Mount and Through-Hole Options PACKAGE PART # SUFFIX Small-outline D Small-outline taped and reeled Single-in-line q T ITSP WAVE SHAPE q MDXXAI DR SL 5 6 R 8 7 R R 2 R R SD4XAE Terminals T and R correspond to the alternative line designators of A and B UL Recognized, E132482 E132482 description These medium voltage symmetrical transient voltage suppressor devices are designed to protect two wire telecommunication applications against transients caused by lightning strikes and a.c. power lines. Offered in three voltage variants to meet battery and protection requirements they are guaranteed to suppress and withstand the listed international lightning surges in both polarities. Transients are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. The PRODUCT high crowbar holding current prevents d.c. latchup as the current subsides. These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation The small-outline 8-pin assignment has been carefully chosen for the TISP series to maximise the inter-pin clearance and creepage distances which are used by standards (e.g. IEC950 IEC950) to establish voltage withstand ratings. INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TISP4125F3 TISP4125F3, TISP4150F3 TISP4150F3, TISP4180F3 TISP4180F3 SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS MARCH 1994 - REVISED SEPTEMBER 1997 absolute maximum ratings RATING SYMBOL VALUE `4125F3 4125F3 Repetitive peak off-state voltage (0°C < TJ < 70°C) UNIT ± 100 `4150F3 4150F3 VDRM ± 120 `4180F3 4180F3 V ± 145 Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3) 1/2 µs (Gas tube differential transient, open-circuit voltage wave shape 1/2 µs) 350 2/10 µs (FCC Part 68, open-circuit voltage wave shape 2/10 µs) 175 8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 120 10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs) 60 5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) A 50 ITSP 0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs) 38 5/310 µs (CCITT IX K17/K20 K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 50 5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 50 10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs) 45 10/1000 µs (REA PE-60 PE-60, open-circuit voltage wave shape 10/1000 µs) Non-repetitive peak on-state current (see Notes 2 and 3) 50 Hz, 35 D Package 1s 4 ITSM SL Package A rms 6 diT/dt A/µs -40 to +150 °C Tstg Linear current ramp, Maximum ramp value < 38 A 250 TJ Initial rate of rise of on-state current, -40 to +150 °C Junction temperature Storage temperature range NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section. 2. Initially the TISP must be in thermal equilibrium with 0°C < TJ