TIP41A/41B/41C TIP41A TIP41B TIP41C

TO-220 Plastic-Encapsulate Transistors TIP41A/41B/41C TO-220 TRANSISTOR (NPN) FEATURES Power dissipation 1. BASE 2. COLLECTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TIP41A/41B/41C TIP41A/41B/41C TO-220 TRANSISTOR (NPN) FEATURES Power dissipation 1. BASE 2. COLLECTOR PCM: 2 W (Tamb=25) 3. EMITTER Collector current ICM: 6 A Collector-base voltage V(BR)CBO: TIP41A TIP41A : 60 V TIP41B TIP41B : 80 V TIP41C TIP41C : 100 V Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise specified) Symbol Test conditions 41B V(BR)CBO Ic= 1mA, IE=0 100 41A 60 41B V(BR)CEO Ic= 30mA, IB=0 V(BR)EBO Emitter-base breakdown voltage Collector cut-off current 41A 41B 41C 41A 41B 41C V 80 100 41C Collector cut-off current UNIT V 80 41C Collector-emitter breakdown voltage MAX 60 41A Collector-base breakdown voltage MIN IE= 1mA, IC=0 ICBO 5 VCB=60V, IE=0 VCB=80V, IE=0 VCB=100V, IE=0 V 0.4 mA 0.7 mA 1 mA VCE= 30V, IB= 0 ICEO VCE= 30V, IB= 0 VCE= 60V, IB= 0 IEBO VEB=5V, IC=0 hFE(1) VCE= 4V, IC= 0.3A 30 hFE(2) VCE=4 V, IC= 3A 15 Collector-emitter saturation voltage VCE(sat) IC=6A, IB=0.6A 1.5 V Base-emitter voltage VBE(on VCE= 4V, IC=6A 2 V Transition frequency fT Emitter cut-off current DC current gain VCE=10V , IC=0.5A f =1MHz 3 75 MHZ