TIP35A/D TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C 218AC MJE180 TIP35/D - Datasheet Archive

 

Order this document by TIP35A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP35A TIP35B* TIP35C* PNP TIP36A TIP36B* TIP36C* Complementary

 

MOTOROLA Order this document by TIP35A/D TIP35A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP35A TIP35A TIP35B TIP35B* TIP35C TIP35C* PNP TIP36A TIP36A TIP36B TIP36B* TIP36C TIP36C* Complementary Silicon High-Power Transistors . . . for general­purpose power amplifier and switching applications. · · · · 25 A Collector Current Low Leakage Current - ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain - hFE = 40 Typ @ 15 A High Current Gain Bandwidth Product - hfe = 3.0 min @ IC = 1.0 A, f = 1.0 MHz Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎ Î Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol TIP35A TIP35A TIP36A TIP36A TIP35B TIP35B TIP36B TIP36B TIP35C TIP35C TIP36C TIP36C Unit *Motorola Preferred Device VCEO 60 V 80 V 100 V Vdc Collector­Base Voltage VCB 60 V 80 V 100 V Vdc Emitter­Base Voltage VEB 5.0 Vdc Collector Current - Continuous Peak (1) IC 25 40 Adc 25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 ­ 100 VOLTS 125 WATTS Base Current - Continuous IB 5.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 125 1.0 Watts W/_C TJ, Tstg ­ 65 to + 150 _C ESB 90 mJ Rating Collector­Emitter Voltage Operating and Storage Junction Temperature Range Unclamped Inductive Load THERMAL CHARACTERISTICS Characteristic Symbol 1.0 _C/W RJA Junction­To­Free­Air Thermal Resistance (1) Pulse Test: Pulse Width = 10 ms, Duty Cycle Unit RJC Thermal Resistance, Junction to Case Max 35.7 _C/W v 10%. CASE 340D­02 TO­218AC 218AC PD, POWER DISSIPATION (WATTS) 125 100 75 50 25 0 0 25 50 75 125 100 TC, CASE TEMPERATURE (°C) 150 175 Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 © Motorola, Inc. 1996 Motorola Bipolar Power Transistor Device Data 1 TIP35A TIP35A TIP35B TIP35B TIP35C TIP35C TIP36A TIP36A TIP36B TIP36B TIP36C TIP36C Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ Î Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎ Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 60 80 100 - - - - - Unit 1.0 1.0 OFF CHARACTERISTICS Collector­Emitter Sustaining Voltage (1) (IC = 30 mA, IB = 0) VCEO(sus) TIP35A TIP35A, TIP36A TIP36A TIP35B TIP35B, TIP36B TIP36B TIP35C TIP35C, TIP36C TIP36C Collector­Emitter Cutoff Current (VCE = 30 V, IB = 0) (VCE = 60 V, IB = 0) Vdc ICEO mA TIP35A TIP35A, TIP36A TIP36A TIP35B TIP35B, TIP35C TIP35C, TIP36B TIP36B, TIP36C TIP36C Collector­Emitter Cutoff Current (VCE = Rated VCEO, VEB = 0) ICES - 0.7 mA Emitter­Base Cutoff Current (VEB = 5.0 V, IC = 0) IEBO - 1.0 mA 25 15 - 75 - - 1.8 4.0 - - 2.0 4.0 ON CHARACTERISTICS (1) DC Current Gain (IC = 1.5 A, VCE = 4.0 V) (IC = 15 A, VCE = 4.0 V) hFE - Collector­Emitter Saturation Voltage (IC = 15 A, IB = 1.5 A) (IC = 25 A, IB = 5.0 A) VCE(sat) Base­Emitter On Voltage (IC = 15 A, VCE = 4.0 V) (IC = 25 A, VCE = 4.0 V) Vdc VBE(on) Vdc DYNAMIC CHARACTERISTICS Small­Signal Current Gain (IC = 1.0 A, VCE = 10 V, f = 1.0 kHz) hfe 25 - - Current­Gain - Bandwidth Product (IC = 1.0 A, VCE = 10 V, f = 1.0 MHz) fT 3.0 - MHz (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2.0%. VCC TURN­ON TIME RL + 2.0 V 0 3.0 TO SCOPE tr 20 ns 10 RB tr 20 ns ­ 30 V ­11.0 V 2.0 10 TO 100 µS DUTY CYCLE 2.0% RL + 9.0 V 3.0 TO SCOPE tr 20 ns 10 RB VBB + 4.0 V FOR CURVES OF FIGURES 3 & 4, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN, REVERSE ALL POLARITIES. Figure 2. Switching Time Equivalent Test Circuits 2 0.3 tr 0.2 0.1 ­11.0 V tr 20 ns 10 to 100 µs DUTY CYCLE 2.0% 0.7 0.5 ­ 30 V t, TIME ( µs) VCC TURN­OFF TIME 0 TJ = 25°C IC/IB = 10 VCC = 30 V VBE(off) = 2 V 1.0 td (PNP) (NPN) 0.07 0.05 0.03 0.02 0.3 0.5 0.7 1.0 5.0 7.0 10 2.0 3.0 IC, COLLECTOR CURRENT (AMPERES) 20 Figure 3. Turn­On Time Motorola Bipolar Power Transistor Device Data 30 TIP35A TIP35A TIP35B TIP35B TIP35C TIP35C TIP36A TIP36A TIP36B TIP36B TIP36C TIP36C 1000 (PNP) (NPN) 3.0 ts t, TIME ( µs) 2.0 500 200 TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 hFE , DC CURRENT GAIN 10 7.0 5.0 ts 1.0 0.7 0.5 tf 0.3 tf 0.2 VCE = 4.0 V TJ = 25°C 100 50 20 10 PNP NPN 5.0 2.0 0.1 0.3 0.5 0.7 1.0 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 20 0.1 30 0.2 100 IC, COLLECTOR CURRENT (AMPS) FORWARD BIAS w 300 µs 50 30 20 TC = 25°C 1.0 ms 10 10 ms 5.0 2.0 dc SECONDARY BREAKDOWN THERMAL LIMIT BONDING WIRE LIMIT 1.0 0.5 0.3 0.2 0 REVERSE BIAS TIP35A TIP35A, 36A TIP35B TIP35B, 36B TIP35C TIP35C, 36C 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR­EMITTER VOLTAGE (VOLTS) 1.0 Figure 6. Maximum Rated Forward Bias Safe Operating Area 40 IC, COLLECTOR CURRENT (AMPS) For inductive loads, high voltage and high current must be sustained simultaneously during turn­off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage­current conditions during reverse biased turn­off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 7 gives RBSOA characteristics. 100 50 Figure 5. DC Current Gain Figure 4. Turn­Off Time There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ­ VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (AMPS) TJ 100°C 30 25 20 TIP35C TIP35C TIP36C TIP36C 15 TIP35B TIP35B TIP36B TIP36B 10 TIP35A TIP35A TIP36A TIP36A 5.0 0 0 10 40 60 80 20 30 50 70 90 VCE, COLLECTOR­EMITTER VOLTAGE (VOLTS) 100 Figure 7. Maximum Rated Forward Bias Safe Operating Area Motorola Bipolar Power Transistor Device Data 3 TIP35A TIP35A TIP35B TIP35B TIP35C TIP35C TIP36A TIP36A TIP36B TIP36B TIP36C TIP36C TEST CIRCUIT VCE MONITOR L1 (SEE NOTE A) RBB1 MJE180 MJE180 TUT 20 INPUT L2 (SEE NOTE A) 50 RBB2 = 100 50 ­ VCC = 10 V + IC MONITOR VBB2 = 0 ­ RS = 0.1 VBB1 = 10 V + VOLTAGE AND CURRENT WAVEFORMS tw = 6.0 ms (SEE NOTE B) 5.0 V INPUT VOLTAGE 0 100 ms COLLECTOR CURRENT 0 ­ 3.0 A 0 ­10 V COLLECTOR VOLTAGE V(BR)CER NOTES: A. L1 and L2 are 10 mH, 0.11 , Chicago Standard Transformer Corporation C­2688, or equivalent. B. Input pulse width is increased until ICM = ­ 3.0 A. C. For NPN, reverse all polarities. Figure 8. Inductive Load Switching 4 Motorola Bipolar Power Transistor Device Data TIP35A TIP35A TIP35B TIP35B TIP35C TIP35C TIP36A TIP36A TIP36B TIP36B TIP36C TIP36C PACKAGE DIMENSIONS C Q B U S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. E 4 DIM A B C D E G H J K L Q S U V A L 1 K 2 3 D J H V MILLIMETERS MIN MAX ­­­ 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF ­­­ 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF STYLE 1: PIN 1. 2. 3. 4. G INCHES MIN MAX ­­­ 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF ­­­ 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 BASE COLLECTOR EMITTER COLLECTOR CASE 340D­02 ISSUE B Motorola Bipolar Power Transistor Device Data 5 TIP35A TIP35A TIP35B TIP35B TIP35C TIP35C TIP36A TIP36A TIP36B TIP36B TIP36C TIP36C Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1­800­441­2447 or 602­303­5454 JAPAN: Nippon Motorola Ltd.; Tatsumi­SPD­JLDC, 6F Seibu­Butsuryu­Center, 3­14­2 Tatsumi Koto­Ku, Tokyo 135, Japan. 03­81­3521­8315 MFAX: RMFAX0@email.sps.mot.com ­ TOUCHTONE 602­244­6609 INTERNET: http://Design­NET.com ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852­26629298 6 *TIP35/D TIP35/D* Motorola Bipolar Power Transistor Device Data TIP35/D TIP35/D