TIP35 TIP35A TIP35B TIP35C TIP36 TIP36A TIP36B TIP36C 1N914 C-2688 BD738 - Datasheet Archive

 

N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR

 

TYPES TIP35 TIP35, TIP35A TIP35A, TIP35B TIP35B, TIP35C TIP35C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP36 TIP36, TIP36A TIP36A, TIP36B TIP36B, TIP36C TIP36C • 125 W at 25°C Case Temperature • 25 A Rated Collector Current • Min fT of 3 MHz at 10 V, 1 A mechanical data absolute maximum ratings at 25°C case temperature (unless otherwise noted) TIP35 TIP35 TIP35A TIP35A TIP35B TIP35B .TIP35C TIP35C Collector-Base Voltage.40 V 60 V 80 V 100 V Collector-Emitter Voltage (See Note 1) .40 V 60 V 80 V 100 V Emitter-Base Voltage .41- 5 V - Continuous Collector Current .41- 25 A- Peak Collector Current (See Note 2).41- 40 A - Continuous Base Current.41- 5 A - Safe Operating Region at (or belowl 25°C Case Temperature. 41- See Figure 5 - Continuous Device Dissipation at (or below} 25°C Case Temperature (See Note 3). -125 W- Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 4|. -3.5 W- Undamped Inductive Load Energy (See Note 5) . - 90 mJ- Operating Collector Junction Temperature Range .^- -65°C to 150°C- Storage Temperature Range.41- -65°Cto150°C- Lead Temperature 1/8 Inch from Case for 10 Seconds. M- 260 C 1. This value applies when the base-emitter diode is open-circuited. 2. This value applies for tw < 0.3 ms, duty cycle < 10%. 3. Derate linearly to 150°C case temperature at the rate of 1 W/°C. 4. Derate linearly to 150°C free-air temperature at the rate of 28 mW/°C. 5. This rating Is based on the capability of the transistor to operate safely in the circuit of Figure 2. L = 20 mH, RBB2 " 100 Si, VBB2 = 0 V, Rs - 0.1 n. Vcc~ 10 V. Energy « lc2L/2. Texas Instruments 2-195 TYPES TIP35 TIP35, TIP35A TIP35A, TIP35B TIP35B. TIP35C TIP35C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS electrical characteristics at 25° C case temperature PARAMETER TEST CONDITIONS TIP35 TIP35 TIP35A TIP35A TIP35B TIP35B TIP35C TIP35C UNIT MIN MAX MIN MAX MIN MAX MIN MAX Collector-Emitter (BR)CEO Breakdown voltage le = 30 mA, Ib = 0, See Note 6 40 60 80 100 V Collector Cutoff 'CE0 Current VCE = 30V, Ib = 0 1 1 mA VCE=60V, lB = 0 1 1 Collector Cutoff CES Current Vce - 40 V, VBE = 0 0.7 mA VCE " 60 V, VBE - 0 0.7 VCE = 80 v. vBE â-  0 0.7 VCE = 100V, VBE=0 0.7 Emitter Cutoff Current VEB-5V, lc = 0 1 1 1 1 mA Static Forward hpE Current Transfer Ratio VCE-4V, le »1.5 A, See Notes 6 and 7 25 25 25 25 Vce=4V, le = 15 A, See Notes 6 and 7 10 50 10 50 10 50 10 50 Base-Emitter BE Voltage VCE = 4 V, le =15 A, See Notes 6 and 7 2 2 2 2 V VCE-4V, le =25 A, See Notes 6 and 7 4 4 4 4 Collector-Emitter vCE(sat) Saturation Voltage lg = 1.5 A, le = 15 A, See Notes 6 and 7 1.8 1.8 1.8 1.8 V lg = 5 A, lc "25 A, See Notes 6 and 7 4 4 4 4 Smatl-Signal Common-Emitter hfe Forward Current Transfer Ratio Vce-lov, le = 1 a, f - 1 kHz 25 25 25 25 Small-Signal Common-Emitter I Forward Current Transfer Ratio VCE = 10V, lc"1A, f = 1 MHz 3 3 3 3 NOTES: 6. These parameters must be measured using pulse techniques. tw = 300 ns, duty cycle < 2%. 7. These parameters are measured with voltage-sensing contacts separate -from the current-carrying contacts. thermal characteristics PARAMETE FI MAX UNIT RtfJC Junction-to-Case Thermal Resistance 1 °c/w R0JA Junction-to-Free-Air Thermal Resistance 35.7 switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS* TYP UNIT ton Turn-On Time 'C= 15 A, >B(1) * 1-5 A, IB(2)"-1-5A, VßE(off) = -4.15 V, R|_ - 2n, See Figure 1 1.2 es tDff Turn-Off Time 0.9 T Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 194 Texas Instruments TYPES TIP35 TIP35, TIP35A TIP35A, TIP35B TIP35B, TIP35C TIP35C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS 1N914 1N914 1N9I4 1N914 1N914 PARAMETER MEASUREMENT INFORMATION jr® f c -o ADJUST FOR ^T. Von' 11 V AT '- INPUT MONITOR TEST CIRCUIT VOLTAGE WAVEFORMS NOTES: A. V, gen is a -30-V -30-V pulse (from 0 V) into a 50-ÃŽ2 termination. B. The Vggn waveform is supplied by a generator with the following characteristics: V < 15 ns, tf ^ 15 ns, ^-out ~ 50 ft, tw = 20 ¿is, duty cycle < 2%. C. Waveforms ere monitored on an oscilloscope with the loll owing characteristics: tr < 15 ns, Rjn > 10MH, C|n < 11.5 pF. D. Resistors must be nonindgctive types. E. The d-c power supplies may require additional bypassing in order to minimize ringing. FIGURE 1 INDUCTIVE LOAD SWITCHING -n °H PUT AGE I 5 V - -I- 3»-l COLLECTOR I CURRENT I lC MONITOR V(BR,C6R- IT TEST CIRCUIT VOLTAGE AND CURRENT WAVEFORMS NOTES: A. L1 and L2 are 10 mH, 0.1 I ÃŽÃŽ, Chicago Standard Transformer Corporation C-2688 C-2688, or equivalent. B. Input pulse width Is Increased until IcM " 3 A. FIGURE 2 Texas Instruments 2-195 TYPES TIP35 TIP35, TIP35A TIP35A, TIP35B TIP35B. TIP35C TIP35C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS STATIC FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT 1000 700 o 400 (0 rr 200 is e MA vce V Gehäuse package Anwendungen applications, remarks 3 3 700 700 80 100 T0-3P TO-66P Verstärker, Schalter, komplementär zu TIP 36 B amplifier, switch, complementary to TIP 36 B Verstärker, Schalter, komplementär zu TIP 36 C amplifier, switch, complementary to TIP 36 C 3 3 400 400 40 60 TO-66P TO-66P Verstärker, Schalter, komplementär zu TIP 42 amplifier, switch, complementary to TIP 42 Verstärker, Schalter, komplementär zu TIP 42 A amplifier, switch, complementary to TIP 42 A 3 3 400 400 80 100 TO-66P TO-66P Verstärker, Schalter, komplementär zu TIP 42 B amplifier, switch, complementary to TIP 42 B Verstärker, Schalter, komplementär zu TIP 42 C amplifier, switch, complementary to TIP 42 C T0-3P TO-66 TO-66 TO-66 Komplementär Endstufen for complementary output stages TO-66 TO-66 TO-66 TO-66P TO-66P TO-66P Darlington TO-66P TO-66P TO-66P Verstärker, Schalter DarMngton amplifier, switch TO-3P TO-3P TO-3P Darlington fT min MHz ices @ ('ceo) vve V Gehäuse package Anwendungen, Bemerkungen applications, remarks 4 (1000) 80 TO-3 Verstärker, Schalter amplifier, switch 50 60 60 70 (0,05) (0,05) (0,05) (0,05) 40 40 40 40 TO-59 TO-59 TO-59 TO-59 Für Computeranwendung komplementär zu 2N 4999, 2N 5001, 2N 5003, 2N 5005 computer application complementary to 2N 4999, 2N 5001, 2N 5003, 2N 5005 60 60 50 50 140 110 TO-3 TO-3 Verstärkerund schnelle Schalter amplifier and high-speed switch 50 60 60 70 (0,05) (0,05) (0,05) (0,05) 40 40 40 40 TO-39 TO-39 TO-39 TO-39 Für Computeranwendung komplementär zu 2N 5147, 2N 5149, 2N 5151, 2N 5153 computer application complementary to 2N 5147, 2N 5149, 2N 5151, 2N 5153 4 4 4 (5) (5) (5) 40 60 80 TO-3 TO-3 TO-3 Verstärker, Schalter amplifier, switch Texas Instruments