MJD32/32C TIP32 TIP32C MJD32 MJD32C - Datasheet Archive

 

PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS DPAK FOR SURFACE MOUNT APPLICATIONS

 

MJD32/32C MJD32/32C PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK · Load Formed for Surface Mount Application (No Suffix) · Straight Lead (I.PACK, "- I" Suffix) · Electrically Similar to Popular TIP32 TIP32 and TIP32C TIP32C 1 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : MJD32 MJD32 : MJD32C MJD32C Collector Emitter Voltage : MJD32 MJD32 : MJD32C MJD32C Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation ( TC=25°C) Collector Dissipation (TA=25°C) Junction Temperature Storage Temperature 1. Base 2. Collector 3. Emitter Symbol Rating - 40 - 100 - 40 - 100 -5 -3 -5 -1 15 1.56 150 -65 ~ 150 VCBO VCEO VEBO IC IC IB PC PC TJ T STG Unit V V V V V A A A W W I-PAK 1 1. Base 2. Collector 3. Emitter °C °C ELECTRICAL CHARACTERISTICS (TC =25°C) Characteristic Symbol Test Conditions VCEO(sus) IC = - 30mA, IB = 0 ICEO VCE = - 40V, IB = 0 VCE = - 60V, IB = 0 VCE = - 40V, VBE = 0 VCE = - 100V, VBE = 0 VBE = - 5V, IC = 0 VCE = - 4V, IC = - 1A VCE = - 4V, IC = - 3A IC = - 3A, IB = - 375mA VCE = - 4V, IC = - 3A VCE = -10V, IC = - 500mA f = 1MHz * Collector Emitter Sustaining Voltage : MJD32 MJD32 : MJD32C MJD32C Collector Cutoff Current : MJD32 MJD32 : MJD32C MJD32C Collector Cutoff Current : MJD32 MJD32 : MJD32C MJD32C Emitter Cutoff Current * DC Current Gain IEBO hFE * Collector Emitter Saturation Voltage * Base Emitter On Voltage Current Gain Bandwidth Product VCE(sat) VBE(on) fT ICES Min Max -50 -50 -20 -20 -1 25 10 3 Unit V V -40 -100 50 -1.2 -1.8 µA µA µA µA mA V V MHz * Pulse Test: PW