TIP29 TIP29A TIP29B TIP29C TIP30 TIP29/29A TIP29B/29C TCS631AD TCS631AE

NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the TIP30 Series 30 W at 25°C Case Temperature 1 A

TIP29 TIP29, TIP29A TIP29A, TIP29B TIP29B, TIP29C TIP29C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the TIP30 TIP30 Series 30 W at 25°C Case Temperature 1 A Continuous Collector Current B 1 3 A Peak Collector Current C 2 Customer-Specified Selections Available E 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE TIP29 TIP29 Collector-base voltage (IE = 0) 80 TIP29A TIP29A 100 TIP29B TIP29B V CBO 120 TIP29C TIP29C V 140 TIP29 TIP29 Collector-emitter voltage (IB = 0) UNIT 40 TIP29A TIP29A TIP29B TIP29B VCEO 60 80 V 100 TIP29C TIP29C VEBO 5 V IC 1 A ICM 3 A IB 0.4 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 30 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2 W ½LIC2 32 mJ °C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds -65 to +150 -65 to +150 °C TL 250 °C This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150°C case temperature at the rate of 0.24 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V. NOITAMROFNI NOTES: 1. 2. 3. 4. Tj Tstg TCUDORP JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIP29 TIP29, TIP29A TIP29A, TIP29B TIP29B, TIP29C TIP29C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TIP29 TIP29 V(BR)CEO Collector-emitter breakdown voltage TIP29A TIP29A IB = 0 (see Note 5) MAX 60 TIP29B TIP29B 80 TIP29C TIP29C IC = 30 mA TYP UNIT 40 100 V VCE = 80 V ICEO IEBO hFE V CE(sat) VBE hfe |hfe | TIP29 TIP29 0.2 Collector-emitter VCE = 100 V VBE = 0 TIP29A TIP29A 0.2 cut-off current VCE = 120 V VBE = 0 TIP29B TIP29B 0.2 VCE = 140 V ICES VBE = 0 VBE = 0 TIP29C TIP29C 0.2 Collector cut-off VCE = 30 V IB = 0 TIP29/29A TIP29/29A 0.3 current VCE = 60 V IB = 0 TIP29B/29C TIP29B/29C 0.3 VEB = 5V IC = 0 Forward current VCE = 4V IC = 0.2 A transfer ratio VCE = 4V IC = 1A IB = 125 mA IC = 1A (see Notes 5 and 6) 0.7 V VCE = IC = 1A (see Notes 5 and 6) 1.3 V Emitter cut-off current Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio 4V 1 (see Notes 5 and 6) mA mA mA 40 15 VCE = 10 V IC = 0.2 A f = 1 kHz 20 VCE = 10 V IC = 0.2 A f = 1 MHz 75 3 NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RJC Junction to case thermal resistance PARAMETER MIN TYP 4.17 °C/W RJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN ton IB(on) = 0.1 A IB(off) = -0.1 A VBE(off) = -4.3 V RL = 30 tp = 20 µs, dc 2% 0.5 µs 2 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. TCUDORP 2 IC = 1 A Turn-off time NOITAMROFNI Turn-on time toff TYP JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP29 TIP29, TIP29A TIP29A, TIP29B TIP29B, TIP29C TIP29C NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TCS631AD TCS631AD VCE = 4 V TC = 25°C tp = 300 µs, duty cycle < 2% 100 10 1 0·001 0·01 0·1 IC = 100 mA IC = 300 mA IC = 1 A 1·0 0·1 0·01 0·1 1·0 TCS631AE TCS631AE 10 VCE(sat) - Collector-Emitter Saturation Voltage - V hFE - DC Current Gain 1000 COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT IC - Collector Current - A 1·0 10 100 1000 IB - Base Current - mA Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 1·0 TCS631AF TCS631AF VBE - Base-Emitter Voltage - V VCE = 4 V TC = 25°C 0·9 0·8 0·7 0·6 0·5 0·01 0·1 1·0 IC - Collector Current - A Figure 3. NOITAMROFNI TCUDORP JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIP29 TIP29, TIP29A TIP29A, TIP29B TIP29B, TIP29C TIP29C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAS631AC SAS631AC tp = 300 µs, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation 10 1·0 0·1 TIP29 TIP29 TIP29A TIP29A TIP29B TIP29B TIP29C TIP29C 0·01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS631AB TIS631AB Ptot - Maximum Power Dissipation - W 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. NOITAMROFNI TCUDORP 4 JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP29 TIP29, TIP29A TIP29A, TIP29B TIP29B, TIP29C TIP29C NPN SILICON POWER TRANSISTORS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. NOITAMROFNI TCUDORP JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. MDXXBE 5