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TIP29B Datasheet

Part Manufacturer Description PDF Type
TIP29B Boca Semiconductor General purpose Amplifier and Switching Applications Original
TIP29B Bourns NPN SILICON POWER TRANSISTORS Original
TIP29B Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
TIP29B Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
TIP29B Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
TIP29B Fairchild Semiconductor NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR Original
TIP29B Motorola 1A POWER TRANSISTOR NPN 80V 30W Original
TIP29B On Semiconductor Complementary Silicon Plastic Power Transistors Original
TIP29B On Semiconductor Complementary Silicon Plastic Power Transistor Original
TIP29B On Semiconductor TIP29 - TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB, PLASTIC, CASE 221A-09, 3 PIN, BIP General Purpose Power Original
TIP29B Philips Semiconductors Silicon Epitaxial-Base Power Transistors Original
TIP29B Power Innovations NPN SILICON POWER TRANSISTORS Original
TIP29B Continental Device India Semiconductor Device Data Book 1996 Scan
TIP29B Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
TIP29B Ferranti Semiconductors Quick Reference Guide 1985 Scan
TIP29B General Electric Power Transistor Data Book 1985 Scan
TIP29B Micro Electronics COMPLEMENTARY SILICON EPITAXIAL-BASE POWER TRANSISTORS Scan
TIP29B Micro Electronics Semiconductor Device Data Book Scan
TIP29B Mospec POWER TRANSISTORS(1.0A,40-100V,30W) Scan
TIP29B Motorola European Master Selection Guide 1986 Scan
Showing first 20 results.

TIP29B

Catalog Datasheet MFG & Type PDF Document Tags

NPN Transistor TO220 VCEO 80V 100V

Abstract: TIP29 TIP29/TIP29A/TIP29B/TIP29C NPN Epitaxial Silicon Transistor Features · Complementary to TIP30 , : TIP29A : TIP29B : TIP29C 40 60 80 100 V V V V VCEO Collector-Emitter Voltage : TIP29 : TIP29A : TIP29B : TIP29C 40 60 80 100 V V V V VEBO Emitter-Base Voltage 5 V , © 2008 Fairchild Semiconductor Corporation TIP29/TIP29A/TIP29B/TIP29C Rev. A www.fairchildsemi.com 1 TIP29/TIP29A/TIP29B/TIP29C - NPN Epitaxial Silicon Transistor July 2008 Symbol VCEO(sus
Fairchild Semiconductor
Original
NPN Transistor TO220 VCEO 80V 100V NPN Transistor VCEO 80V 100V tip29 npn NPN Transistor VCEO 80V 100V DC Current gain 100 Transistor tip29 TRANSISTOR TC 100 TIP29/TIP29A/TIP29B/TIP29C TIP30/TIP30A/TIP30B/TIP30C TIP29/29A TIP29B/29C

TIP29B

Abstract: TIP29 TIP29, TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS Designed for Complementary Use , VALUE TIP29 Collector-base voltage (IE = 0) 80 TIP29A 100 TIP29B V CBO 120 TIP29C V 140 TIP29 Collector-emitter voltage (IB = 0) UNIT 40 TIP29A TIP29B VCEO , Specifications are subject to change without notice. 1 TIP29, TIP29A, TIP29B, TIP29C NPN SILICON POWER , TIP29B 80 TIP29C IC = 30 mA TYP UNIT 40 100 V VCE = 80 V ICEO IEBO hFE V
Bourns
Original
TCS631AE TCS631AF SAS631AC TIS631AB
Abstract: TIP29, TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with , noted) RATING TIP29 Collector-base voltage (IE = 0) TIP29A TIP29B TIP29 TIP29C Collector-emitter voltage (IB = 0) Emitter-base voltage TIP29A TIP29B TIP29C VCEO VEBO ICM Ptot ½LIC2 Tstg TL Tj Ptot IB IC , . 1 TIP29, TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS electrical characteristics at 25 , TIP29A TIP29B TIP29C TIP29 TIP29A TIP29B TIP29C TIP29/29A TIP29B/29C MIN 40 60 80 100 0.2 0.2 0.2 0.2 0.3 Bourns
Original
TCS631AD

TIP29

Abstract: t1p29 Symbol Rating Unit Collector Base Voltage TIP29 VcBO 40 V TIP29A 60 V TIP29B TIP29C 80 V TIP29 100 V Collector Emitter Voltage TIP29A VcEO 40 V TIP29B 60 V TIP29C 80 V 100 V , BVceo(sus) lc= 30mA, lB= 0 40 V : TIP29A 60 V : TIP29B 80 V : TIP29C 100 V Collector Cutoff Current : TIP29/29A IcEO Vce=30V, Ib= 0 0.3 mA : TIP29B/29C Vce=60V, Ib= 0 0.3 mA Collector Cutoff Current :TIP29 Ices Vce=40V, Veb=0 200 HA : TIP29A Vce=60V, Veb=0 200 HA : TIP29B Vce
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OCR Scan
t1p29 TIP29/29A/29B/29C TIP30/30A/30B/30C

tipxxx

Abstract: TIP29B, TIP29C, (NPN), TIP30B, TIP30C, (PNP) Complementary Silicon Plastic Power Transistors , ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC TIP29B 9 TIP30B 80 80 TIP29C 9C TIP30C 100 100 , Publication Order Number: TIP29B/D ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ , , VEB = 0) TIP29B, TIP30B TIP29C, TIP30C VCEO(sus) ICEO ICES Collector Cutoff Current (VCE = 60 Vdc, IB = 0) 0.3 mAdc µAdc TIP29B, TIP30B TIP29C, TIP30C 200 200 1.0 - 75 Emitter Cutoff Current (VBE = 5.0
ON Semiconductor
Original
tipxxx TIP29B/D

TIP29

Abstract: TIP29C =25 ) SYMBOL PARAMETER CONDITIONS TIP29 Collector-base voltage 60 Open emitter V TIP29B , TIP29B Emitter-base voltage IC 80 TIP29C VEBO UNIT 40 TIP29A VCBO VALUE 100 , ) Collector-emitter sustaining voltage MIN VBE TIP29A V TIP29B 80 100 Collector-emitter , =40V; VEB=0 TIP29A VCE=60V; VEB=0 TIP29B VCE=80V; VEB=0 TIP29C ICEO UNIT 60 IC , =30V; IB=0 TIP29B/29C VCE=60V; IB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC
-
Original
transistors TIP29 29-C TIP-29B

TIP29

Abstract: TIP29C Characteristic Symbol Rating Unit Collector Emitter Voltage : TIP29 : TIP29A : TIP29B : TIP29C : TIP29 : TIP29A : TIP29B : TIP29C 40 V 100 V 40 V 60 V 80 VCEO V , ) Characteristic Symbol Test Conditions Min Max Unit 40 V : TIP29A 60 V : TIP29B , : TIP29A VCE = 60V, VEB = 0 200 uA : TIP29B VCE = 80V, VEB = 0 200 uA : TIP29C , : TIP29/29A Collector Cutoff Current : TIP29 ICEO : TIP29B/29C Emitter Cutoff Current
Samsung Electronics
Original
29a transistor
Abstract: noted) Symbol Parameter Value Collector-Base Voltage TIP29 40 TIP29A 60 TIP29B 80 TIP29C 100 TIP29 40 TIP29A 60 TIP29B 80 TIP29C VCBO 100 , Test conditions IC=100µA,IE=0 Min TIP29 Typ Max Unit 40 TIP29A V TIP29B TIP29C V(BR)CEO Collector cut-off current ICEO 60 80 TIP29C V(BR)EBO 40 TIP29B , IE=100µA,IC=0 V 5 VCE=30V,IB=0 VCE=60V,IB=0 V TIP29/29A 0.3 TIP29B/29C VCE=40V,VEB Jiangsu Changjiang Electronics Technology
Original

P29A

Abstract: TIP29 RCA , and TIP29B. Fig. 4 - T ypical d c beta cha ra c te ris tic s fo r TIP29C. TIP29, TIP29A, TIP29B , TIP29, TIP29A, TIP29B, TIP29C File Number 990 Epitaxial-Base, Silicon N-P-N VERSAWATT , . TIP29A 60 60 5 3 1 30 2 0.24 40 40 5 3 1 30 2 TIP29B 80 80 5 3 1 30 2 -65 to 150 , ?3F5 °C 2-516 o o w/°c TIP29, TIP29A, TIP29B, TIP29C ELECTRICAL C H A R A C TE R IS , TERISTIC TIP29A Min. Max. 0.3 TIP29B Min. 0.3 Max. TIP29C Min. 0.3 Max. Units c mA 0.2
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OCR Scan
P29A TIP29 RCA tip29 equivalent TIP30- RCA-TIP29 JEDECTO-220AB TQ-220AB 92CS-24796 92CS-2479TRI

SGS-Thomson

Abstract: VCEO V ebo Value TIP29A TIP30A 60 60 Unit TIP29C TIP30C 100 100 TIP29B TIP30B 80 80 5 1 3 , . December 1995 1/4 TIP29A/TIP29A/30A V ce = 3 0 V for TIP29B/29C/30B/30C V cb = 6 0 V I ce s Collector Cut-off Current ( V be = 0 ) Emitter Cut-off Current (lc = 0 ) for TIP29A/30A for TIP29B/30B for , )* Collector-Emitter Sustaining Voltage (Ib = 0) lc = 3 0 m A for TIP29A/30A for TIP29B/30B for TIP29C/30C lc
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OCR Scan
SGS-Thomson TIP29A/29B/29C TIP30A/30B/30C TIP31A TIP31C TIP32A TIP32C

TIP29

Abstract: TIP29A G ÏRAHSYS ELECTRONICS LIMITI!» TIP29, TIP29A, TIP29B, TIP29C NPN SILICON POWER , VALUE UNIT TIP29 80 TIP29A 100 Collector-base voltage (lE = 0) TIP29B VCBO 120 V TIP29C 140 TIP29 40 TIP29A 60 Collector-emitter voltage (lB = 0) TIP29B VCEO 80 V TIP29C 100 , processing does not Power INNOVATIONS TIP29, TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS , TIP29 40 V(BR)CEO Collector-emitter breakdown voltage lc = 30 mA (see Note 5) lB = 0 TIP29A TIP29B
-
OCR Scan
OF TRANSISTOR tip30 T0220

power transistor npn to-220

Abstract: TIP29B, TIP29C, (NPN), TIP30B, TIP30C, (PNP) Complementary Silicon Plastic Power Transistors , ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC TIP29B 9 TIP30B 80 80 TIP29C 9C TIP30C 100 100 , , LLC, 2002 1 April, 2002 ­ Rev. 6 Publication Order Number: TIP29B/D , , VEB = 0) TIP29B, TIP30B TIP29C, TIP30C VCEO(sus) ICEO ICES Collector Cutoff Current (VCE = 60 Vdc, IB = 0) 0.3 mAdc µAdc TIP29B, TIP30B TIP29C, TIP30C 200 200 1.0 - 75 Emitter Cutoff Current (VBE = 5.0
ON Semiconductor
Original
power transistor npn to-220

TIP29B-D

Abstract: TIP29B Current (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) TIP29B, TIP30B TIP29C, TIP30C Collector , ) TIP29B, TIP30B TIP29C, TIP30C µAdc OFF CHARACTERISTICS Characteristic ELECTRICAL , TIP29B TIP30B TIP29C TIP30C 100 Vdc 80 100 1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80 ­ 100 VOLTS 30 WATTS Unit 80 Vdc TIP29B TIP29C PNP TIP30B TIP30C MAXIMUM , DATA Order this document by TIP29B/D MOTOROLA TIP29B TIP29C TIP30B TIP30C 3.0 2.0 500
Motorola
Original
TIP29B-D NT 407 F TRANSISTOR TO 220

RCA-TIP29

Abstract: rcaTIP29 Fig. 3 - Typical dc beta characteristics for TIP29, TIP29A, and TIP29B. Fig. 4 - Typical dc beta , TIP29, TIP29A, TIP29B, TIP29C HARRIS SENICOND SECTOR 5bE D File Number 990 4302271 0040 , - 0 ? The RCA-TIP29, TIP29A, TIP29B, and TIP29C are epitaxialbase, silicon n-p-n transistors , RATINGS, Absolute-M axim um Values: TIP29 40 40 5 3 1 30 2 TIP29A 60 60 5 3 1 30 2 TIP29B 60 60 5 3 1 , COND. VOLT CUR. AGE RENT Vdc Ade V ce 'CEO b =o ' ces v e b =o JIP29, TIP29A, TIP29B, TIP29C
-
OCR Scan
rcaTIP29 transistors TIP30 T-33-09 CS-I9663 93CS-20ST

TIP29

Abstract: TIP29A TIP29, TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations , Collector-base voltage (IE = 0) TIP29A TIP29B VALUE VCBO 100 120 TIP29C 40 TIP29A TIP29B , . Production processing does not necessarily include testing of all parameters. 1 TIP29, TIP29A, TIP29B , breakdown voltage TIP29A IB = 0 (see Note 5) MAX 60 TIP29B 80 TIP29C IC = 30 mA , V BE = 0 TIP29A 0.2 cut-off current V CE = 120 V V BE = 0 TIP29B 0.2 V CE =
Power Innovations
Original

l1s3

Abstract: tip29a es IA r s c s-THonsoN 0 7 e d I ? ^ - - · ·j 1 Ì TIP29 TIP30 TIP29A TtP3°A TIP29B TIP30B , MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS The TIP29, TIP29A, TIP29B and TIP29C are silicon , TIP29B TIP29C TIP30 TIP30A TIP30B TIP30C 40V 40V 60V 60V 5V 1A 3A 0.4A 30W 80V 80V 100 V 100V Ib ^ to , . Dimensions in mm ÜT0-220 S G S-TH O îISO N Q7E D 67C 15385 D G 174Û 3 , 'Z9 T1P29A TÎP29B , conditions for TIP29/29A/30/30A V CE = 30V for TIP29B/29C/30B/30C V CE = 60V for TIP29/30 for TIP29A/30A for
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OCR Scan
T1P29C l1s3 tip29a es TIP29B/29C/30B/30C TIP29B/30B F--09
Abstract: TIP29, TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with , TIP29A TIP29B TIP29C VCEO VEBO IC Peak collector current (see Note 1) ICM Continuous , TIP29B VALUE 100 120 140 40 60 80 100 5 1 3 IB 0.4 Ptot 2 ½LIC2 V V A , , TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case , TIP29A IB = 0 (see Note 5) MAX 60 TIP29B 80 TIP29C IC = 30 mA TYP UNIT Bourns
Original

TIP 29b

Abstract: tip29c , TIP29B and TIP29C are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package , eter NPN PNP VcBO VcEO V ebo lc lew Ib Value TIP29A TIP30A 60 60 TIP29B TIP30B 80 80 5 1 3 0.4 25 , types vottage and current values are negative. May 1997 | 1/2 737 j TIP29A/TIP29B/TIP29C , ) for TIP29A /30A V ce = 30 V for TIP 29B /29C /30B /30C V cb = 60 V for TIP29A /30A for TIP29B /30B for TIP29C /30C V eb = 5 V l c = 30 mA for TIP29A /30A for TIP29B /30B for TIP29C /30C Ices C ollector
-
OCR Scan
IP30C TIP 29b AT 30B P30A/30B/30C
Abstract: TIP29, TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with , ) 80 TIP29A 100 TIP29B V CBO 120 TIP29C 40 TIP29A TIP29B VCEO TIP29C , , TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case , TIP29A IB = 0 (see Note 5) MAX 60 TIP29B 80 TIP29C IC = 30 mA TYP 100 V , 0.2 cut-off current VCE = 120 V VBE = 0 TIP29B 0.2 VCE = 140 V ICEO IEBO hFE V -
Original
Abstract: TIP29, TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS Copyright© 1997, Power Innovations , ) RATING TIP29 Collector-base voltage (lE = 0) TIP29A TIP29B TIP29C TIP29 Collector-emitter voltage (lB = 0) TIP29A TIP29B TIP29C Emitter-base voltage Continuous collector current Peak collector current (see Note 1 , TIP29, TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS JULY 1968 - REVISED MARCH 1997 , = TIP29A o TIP29B TIP29C O TIP29 TIP29A TIP29B TIP29C TIP29/29A TIP29B/29C V > VCE -
OCR Scan

TIP30A

Abstract: TIP31A Parameter Value Unit NPN TIP29A TIP29B TIP29C PNP TIP30A TIP30B TIP30C V , voltage and current values are negative. December 1995 1/4 TIP29A/TIP29B/TIP29C/TIP30A/TIP30B , Conditions Min. Collector Cut-off Current (V BE = 0) for TIP29A/30A for TIP29B/30B for TIP29C/30C , B = 0) I C = 30 mA for TIP29A/30A for TIP29B/30B for TIP29C/30C mA 0.2 0.2 0.2 V EB , Typ. Max. 0.3 for TIP29A/30A V CE = 30 V for TIP29B/29C/30B/30C V CB = 60 V mA V V V
STMicroelectronics
Original
TIP31B TIP32B morocco tip32c morocco tip30A P011C

TIP29

Abstract: Voltage Parameter : TIP29 : TIP29A : TIP29B : TIP29C 1.Base Value 40 60 80 100 40 60 80 100 5 1 3 , Voltage : TIP29 : TIP29A : TIP29B : TIP29C Emitter-Base Voltage Collector Current (DC) Collector Current , noted Symbol VCEO(sus) Parameter *Collector-Emitter Sustaining Voltage : TIP29 : TIP29A : TIP29B : TIP29C Collector Cut-off Current : TIP29/29A : TIP29B/29C Collector Cut-off Current : TIP29 : TIP29A : TIP29B : TIP29C IEBO hFE VCE(sat) VBE(sat) fT Emitter Cut-off Current *DC Current Gain *Collector-Emitter
Fairchild Semiconductor
Original
TIP29BTU

OF TIP29

Abstract: DATASHEET OF TIP29 TIP29, TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS Designed for Complementary Use , VALUE TIP29 Collector-base voltage (IE = 0) 80 TIP29A 100 TIP29B V CBO 120 TIP29C V 140 TIP29 Collector-emitter voltage (IB = 0) UNIT 40 TIP29A TIP29B VCEO , Specifications are subject to change without notice. 1 TIP29, TIP29A, TIP29B, TIP29C NPN SILICON POWER , TIP29B 80 TIP29C IC = 30 mA TYP UNIT 40 100 V VCE = 80 V ICEO IEBO hFE V
Bourns
Original
OF TIP29 DATASHEET OF TIP29 pdf TIP29
Showing first 20 results.