TIP141/142 TIP146/147 TIP142 TIP146 TIP147 IP141 IP142 IP146 IP147

TIP146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP141and TIP142

TIP141/142 TIP141/142 TIP146/147 TIP146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP141and TIP142 TIP142 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in TO-218 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP146 TIP146 and TIP147 TIP147 respectively. 3 2 1 TO-218 INTERNAL SCHEMATIC DIAGRAM R2 Typ. = 150 R1 Typ. = 5 K ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e Unit NPN T IP141 IP141 T IP142 IP142 PNP T IP146 IP146 T IP147 IP147 V CBO Collector-Base Voltage (I E = 0) 80 100 V V CEO Collector-Emitter Voltage (IB = 0) 80 100 V V EBO Emitter-Base Voltage (IC = 0) 5 V Collector Current 10 A Collector Peak Current 20 A Base Current 0.5 A IC I CM IB o P tot T otal Dissipation at Tc ase 25 C T s tg Storage T emperature Tj Max. Operating Junction T emperature 125 W -65 to 150 o C 150 o C * For PNP types voltage and current values are negative. October 1995 1/4 TIP141/TIP142/TIP146/TIP147 TIP141/TIP142/TIP146/TIP147 THERMAL DATA R thj -ca se Thermal Resistance Junction-case Max o 1 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l Parameter T est Con ditio ns Min . T yp. Max. Unit I CBO Collector Cut-off Current (I E = 0) for T IP141/146 IP141/146 for TIP142/147 TIP142/147 V CB = 80 V V CB = 100 V 1 1 mA mA I CEO Collector Cut-off Current (I B = 0) for T IP141/146 IP141/146 for T IP142/147 IP142/147 V CE = 40 V V CE = 50 V 2 2 mA mA I EBO Emitter Cut- off Current (I C = 0) V EBO = 5 V 2 mA V CEO(sus) * Collector-Emitter Sustaining Voltage (I B = 0) I C = 30 mA for T IP141/146 IP141/146 for TIP142/147 TIP142/147 80 100 V V V CE(sat )* Collector-Emitter Saturation Voltage IC = 5 A I C = 10 A I B = 10 mA I B = 40 mA 2 3 V V V BE(on) * Base-Emitter Voltage I C =10 A V CE = 4 V 3 V DC Current Gain IC = 5 A I C = 10 A V CE = 4 V V CE = 4 V t on Turn-on Time t off Turn-off Time IC = 10 A I B2 = -40 mA I B1 = 40 mA RL = 3 h FE* * For PNP types voltage and current values are negative. 2/4 1000 500 0.9 µs 4 µs TIP141/TIP142/TIP146/TIP147 TIP141/TIP142/TIP146/TIP147 TO-218 (SOT-93) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.7 4.9 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.5 0.098 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437 H 14.7 15.2 0.578 0.598 L2 16.2 0.637 L3 18 L5 0.708 3.95 4.15 L6 0.155 0.163 31 1.220 12.2 0.480 Ø 4 4.1 0.157 0.161 D C A E R L6 L5 H G L3 L2 F ¯ R 1 2 3 P025A P025A 3/4 TIP141/TIP142/TIP146/TIP147 TIP141/TIP142/TIP146/TIP147 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequence of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No s license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4