TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 220AB TIP110/D 1N5825 MSD6100 MJE254 - Datasheet Archive

 

NPN Plastic Medium-Power Complementary Silicon Transistors TIP110 TIP111* . . . designed for general­purpose amplifier and

 

ON Semiconductor ) NPN Plastic Medium-Power Complementary Silicon Transistors TIP110 TIP110 TIP111 TIP111* . . . designed for general­purpose amplifier and low­speed switching applications. TIP112 TIP112 * PNP · High DC Current Gain - · · · · TIP115 TIP115 hFE = 2500 (Typ) @ IC = 1.0 Adc Collector­Emitter Sustaining Voltage - @ 30 mAdc VCEO(sus) = 60 Vdc (Min) - TIP110 TIP110, TIP115 TIP115 = 80 Vdc (Min) - TIP111 TIP111, TIP116 TIP116 = 100 Vdc (Min) - TIP112 TIP112, TIP117 TIP117 Low Collector­Emitter Saturation Voltage - VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc Monolithic Construction with Built­in Base­Emitter Shunt Resistors TO­220AB 220AB Compact Package TIP116 TIP116 * TIP117 TIP117 * *ON Semiconductor Preferred Device ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎ Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎ Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ Î Î ÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS Symbol TIP110 TIP110, TIP115 TIP115 TIP111 TIP111, TIP116 TIP116 TIP112 TIP112, TIP117 TIP117 Unit VCEO 60 80 100 Vdc Collector­Base Voltage VCB 60 80 100 Vdc Emitter­Base Voltage VEB 5.0 Vdc Collector Current - Continuous Peak IC 2.0 4.0 Adc Base Current IB 50 DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60­80­100 VOLTS 50 WATTS mAdc Rating Collector­Emitter Voltage Total Power Dissipation @ TC = 25_C Derate above 25_C PD 50 0.4 Watts W/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 2.0 0.016 Watts W/_C Unclamped Inductive Load Energy - Figure 13 E 25 ­65 to +150 1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR mJ TJ, Tstg 4 _C Operating and Storage Junction 2 3 CASE 221A­09 TO­220AB 220AB THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, Junction to Case RJC 2.5 _C/W Thermal Resistance, Junction to Ambient RJA 62.5 _C/W Preferred devices are ON Semiconductor recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2002 April, 2002 ­ Rev. 4 1 Publication Order Number: TIP110/D TIP110/D TIP110 TIP110 TIP111 TIP111 TIP112 TIP112 TIP115 TIP115 TIP116 TIP116 TIP117 TIP117 PD, POWER DISSIPATION (WATTS) TA TC 3.0 60 2.0 40 TC 1.0 20 0 0 TA 0 20 40 60 80 100 T, TEMPERATURE (°C) 120 Figure 1. Power Derating http://onsemi.com 2 140 160 TIP110 TIP110 TIP111 TIP111 TIP112 TIP112 TIP115 TIP115 TIP116 TIP116 TIP117 TIP117 ÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎ Î Î Î Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎ Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 60 80 100 - - - - - - 2.0 2.0 2.0 - - - 1.0 1.0 1.0 - 2.0 1000 500 Unit - - OFF CHARACTERISTICS Collector­Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) VCEO(sus) TIP110 TIP110, TIP115 TIP115 TIP111 TIP111, TIP116 TIP116 TIP112 TIP112, TIP117 TIP117 Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) TIP110 TIP110, TIP115 TIP115 TIP111 TIP111, TIP116 TIP116 TIP112 TIP112 ,TIP117 TIP117 Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) TIP110 TIP110, TIP115 TIP115 TIP111 TIP111, TIP116 TIP116 TIP112 TIP112, TIP117 TIP117 Vdc ICEO mAdc ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) (IC = 2.0 Adc, VCE = 4.0 Vdc) hFE - Collector­Emitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc) VCE(sat) - 2.5 Vdc Base­Emitter On Voltage (IC = 2.0 Adc, VCE = 4.0 Vdc) VBE(on) - 2.8 Vdc hfe 25 - - - - 200 100 DYNAMIC CHARACTERISTICS Small­Signal Current Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob TIP115 TIP115, TIP116 TIP116, TIP117 TIP117 TIP110 TIP110, TIP111 TIP111, TIP112 TIP112 pF (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2%. 4.0 V CC RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS -30 V D1, MUST BE FAST RECOVERY TYPE, eg: 1N5825 1N5825 USED ABOVE IB 100 mA RC SCOPE MSD6100 MSD6100 USED BELOW IB 100 mA TUT RB 51 0 V1 approx -12 V D1 8.0 k 60 +4.0 V 25 µs tr, tf 10 ns DUTY CYCLE = 1.0% VCC = 30 V IB1 = IB2 IC/IB = 250 TJ = 25°C 2.0 t, TIME (s) µ V2 approx +8.0 V ts tf 1.0 0.8 tr 0.6 0.4 for td and tr, D1 is disconnected and V2 = 0, RB and RC are varied to obtain desired test currents. 0.2 0.04 0.06 For NPN test circuit, reverse diode, polarities and input pulses. Figure 2. Switching Times Test Circuit PNP NPN 0.1 td @ VBE(off) = 0 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) Figure 3. Switching Times http://onsemi.com 3 2.0 4.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) TIP110 TIP110 TIP111 TIP111 TIP112 TIP112 TIP115 TIP115 TIP116 TIP116 TIP117 TIP117 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 P(pk) ZJC(t) = r(t) RJC RJC = 2.5°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) ZJC(t) DUTY CYCLE, D = t1/t2 0.05 0.07 0.05 0.02 0.03 0.02 0.01 0.01 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 50 100 200 500 1.0 k Figure 4. Thermal Response ACTIVE­REGION SAFE­OPERATING AREA 10 4.0 5ms 2.0 1.0 0.1 1.0 1ms TJ = 150°C dc BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECONDARY BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO TIP115 TIP115 TIP116 TIP116 TIP117 TIP117 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 10 4.0 2.0 0.1 1.0 10 40 60 80 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 150°C dc BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECONDARY BREAKDOWN LIMITED 1.0 TIP110 TIP110 TIP111 TIP111 TIP112 TIP112 CURVES APPLY BELOW RATED VCEO 60 80 100 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. TIP115 TIP115, 116, 117 Figure 6. TIP110 TIP110, 111, 112 200 C, CAPACITANCE (pF) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ­ VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5 and 6 is based on T J(pk) = 150_C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. TC = 25°C 100 70 50 Cob 30 Cib 20 10 0.04 0.06 0.1 PNP NPN 0.2 0.4 0.6 1.0 2.0 4.0 6.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 4 20 40 TIP110 TIP110 TIP111 TIP111 TIP112 TIP112 TIP115 TIP115 TIP116 TIP116 TIP117 TIP117 NPN TIP110 TIP110, 111, 112 PNP TIP115 TIP115, 116, 117 6.0 k 6.0 k TJ = 125°C 3.0 k 25°C 2.0 k -55°C 1.0 k 800 600 400 300 0.04 0.06 0.1 0.2 1.0 0.4 0.6 IC, COLLECTOR CURRENT (AMP) 3.0 k 25°C 2.0 k -55°C 1.0 k 800 600 400 300 0.04 0.06 4.0 2.0 VCE = 3.0 V TJ = 125°C 4.0 k hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 4.0 k VCE = 3.0 V 0.1 0.2 1.0 0.4 0.6 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 3.4 3.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain TJ = 25°C IC = 0.5 A 1.0 A 2.6 4.0 A 2.0 A 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, BASE CURRENT (mA) 20 50 100 3.4 3.0 2.6 TJ = 25°C IC = 0.5 A 1.0 A 2.0 A 4.0 A 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, BASE CURRENT (mA) 20 50 100 Figure 9. Collector Saturation Region 2.2 2.2 TJ = 25°C TJ = 25°C 1.8 1.4 VBE(sat) @ IC/IB = 250 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.8 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.6 0.6 0.2 0.04 0.06 VBE(sat) @ IC/IB = 250 1.4 0.1 0.2 0.4 0.6 1.0 2.0 0.2 0.04 0.06 4.0 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages http://onsemi.com 5 2.0 4.0 TIP110 TIP110 TIP111 TIP111 TIP112 TIP112 TIP115 TIP115 TIP116 TIP116 TIP117 TIP117 +0.8 PNP TIP115 TIP115, 116, 117 V, TEMPERATURE COEFFICIENTS (mV/°C) V, TEMPERATURE COEFFICIENTS (mV/°C) NPN TIP110 TIP110, 111, 112 *APPLIES FOR IC/IB hFE/3 0 -0.8 -1.6 25°C to 150°C *VC for VCE(sat) -2.4 -55°C to 25°C 25°C to 150°C -3.2 VC for VBE -4.0 -4.8 0.04 0.06 -55°C to 25°C 0.1 0.2 0.4 0.6 1.0 2.0 4.0 +0.8 0 *APPLIES FOR IC/IB hFE/3 25°C to 150°C -0.8 -1.6 *VC for VCE(sat) -55°C to 25°C -2.4 25°C to 150°C -3.2 -4.0 -55°C to 25°C VC for VBE -4.8 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 11. Temperature Coefficients 105 REVERSE 104 103 FORWARD IC, COLLECTOR CURRENT (A) µ IC, COLLECTOR CURRENT (A) µ 105 VCE = 30 V 102 101 TJ = 150°C 100 100°C 25°C 10-1 -0.6 -0.4 -0.2 0 +0.2 103 REVERSE 102 101 100 TJ = 150°C 100°C MJE254 MJE254 50 RBB1 TUT 2k 50 VBB1 = 10 V + - RBB2 100 VBB2 = 0 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 +1.4 Figure 12. Collector Cut-Off Region VOLTAGE AND CURRENT WAVEFORMS tw 3.5 ms (SEE NOTE A) VCE MONITOR INPUT 25°C VBE, BASEEMITTER VOLTAGE (VOLTS) VBE, BASEEMITTER VOLTAGE (VOLTS) TEST CIRCUIT FORWARD VCE = 30 V 10-1 -0.6 -0.4 +1.2 +1.4 +0.4 +0.6 +0.8 +1.0 104 RS = 0.1 0V INPUT VOLTAGE 100 mH -5 V + VCC = 20 V IC MONITOR COLLECTOR CURRENT 0.71 A 0V VCER COLLECTOR VOLTAGE 20 V VCE(sat) Note A: Input pulse width is increased until ICM = 0.71 A, NPN test shown; for PNP test reverse all polarity and use MJE224 MJE224 driver. Figure 13. Inductive Load Switching http://onsemi.com 6 100 ms TIP110 TIP110 TIP111 TIP111 TIP112 TIP112 TIP115 TIP115 TIP116 TIP116 TIP117 TIP117 PACKAGE DIMENSIONS STYLE 1: PIN 1. 2. 3. 4. TO­220AB 220AB CASE 221A­09 ISSUE AA BASE COLLECTOR EMITTER COLLECTOR ­T­ B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N http://onsemi.com 7 INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 -0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 -2.04 TIP110 TIP110 TIP111 TIP111 TIP112 TIP112 TIP115 TIP115 TIP116 TIP116 TIP117 TIP117 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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