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THYRISTOR di/dt 100A/uS

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Abstract: ) ITQRM=4000A, diGQ/dt=6000A/µs di/dt 1000A/µs IGM=200A, diG/dt=100A/µs VTM 3.5V (typical) IT=4000A IGT , reduce the di/dt limitation. As the GCT Thyristor has fast turn-on and turn-off operation, the , GCT Thyristor as well and permits a reduction in the anode di/dt reactor size and its power loss by , 2000A/µs IF=1500A VFM 3.0V (typ) IF=3400A, Tj=125°C Qrr 3000µC (typ) IF =1500A, di/dt=1000A/µs Erec 8.0J/P (typ) IF =1500A, di/dt=1000A/µs Recovery Softness Factor 2 (typ) IF =1500A, di ... Original
datasheet

8 pages,
478.26 Kb

100A 1000V thyristor high side gate driver GTO Thyristor 6kV 500a 200A thyristor gate control circuit gct thyristor thyristor 1000A GTO thyristor 10A RC inductive load thyristor design 6 thyristor driver circuit GTO 100A 500V gto Gate Drive circuit MITSUBISHI GATE TURN-OFF THYRISTOR gto datasheet abstract
datasheet frame
Abstract: Tj=125°C VD=2/3VDRM Tj=125°C VD=2/3VDRM Tj=125°C ITM=IO,VD=2/3VDRM dv/dt=20V/µs, VR=100V -di/dt=20A/µs, Tj=125°C VD=2/3VDRM Tj=125°C IG=200mA, diG/dt=0.2A/µs Tj=25°C Tj=25°C Junction to Case Maximum Value. Unit , THYRISTOR MODULE 100A / 800V FEATURES * Isolated Base * 3 Phase Converter with Rush-Current , Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage ITSM I2t di/dt PGM PG(AV) IGM , IO, Tj=125°C IG=200mA, diG/dt=0.2A/µs · Unit A A2s A/µs W W A V V 2000 20000 100 5 1 2 10 5 ... Original
datasheet

4 pages,
236.01 Kb

E187184 PGH1008AM E187184 abstract
datasheet frame
Abstract: VD=2/3VDRM Tj=125°C VD=2/3VDRM Tj=125°C ITM=IO,VD=2/3VDRM dv/dt=20V/µs, VR=100V -di/dt=20A/µs , PGH10016AM PGH10016AM THYRISTOR MODULE OUTLINE DRAWING 100A / 1600V Nut FEATURES * Isolated , 100A, Tj=25°C Rth(j-c) Junction to Case (Total) Part of Thyristor (1 die) Maximum Value. 20 , Turned-On Current di/dt Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage , , ITM=2 IO, Tj=125°C IG=200mA, diG/dt=0.2A/µs · PGM PG(AV) IGM VGM VRGM Unit 2000 A ... Original
datasheet

4 pages,
231.47 Kb

PGH10016AM E187184 E187184 abstract
datasheet frame
Abstract: Tj=125°C VD=2/3VDRM Tj=125°C ITM=IO,VD=2/3VDRM dv/dt=20V/µs, VR=100V -di/dt=20A/µs, Tj=125°C VD=2/3VDRM Tj=125°C IG=200mA, diG/dt=0.2A/µs Tj=25°C Tj=25°C Junction to Case Maximum Value. Unit , PGH1008AM PGH1008AM THYRISTOR MODULE OUTLINE DRAWING 100A / 800V Nut FEATURES * Isolated Base , of Turned-On Current di/dt Peak Gate Power Average Gate Power Peak Gate Current Peak Gate , /3VDRM, ITM=2 IO, Tj=125°C IG=200mA, diG/dt=0.2A/µs · PGM PG(AV) IGM VGM VRGM Unit 2000 ... Original
datasheet

4 pages,
236.02 Kb

PGH1008AM E187184 E187184 abstract
datasheet frame
Abstract: VD=6V,IT=1A Tj=25°C Tj=125°C VD=2/3VDRM Tj=125°C VD=2/3VDRM Tj=125°C ITM=IO,VD=2/3VDRM dv/dt=20V/µs, VR=100V -di/dt=20A/µs, Tj=125°C VD=2/3VDRM Tj=125°C IG=200mA, diG/dt=0.2A/µs Tj=25°C Tj=25°C Junction to , THYRISTOR MODULE 100A / 1600V FEATURES * Isolated Base * 3 Phase Converter with Rush-Current , Power Average Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage ITSM I2t di/dt , /3VDRM, ITM=2 IO, Tj=125°C IG=200mA, diG/dt=0.2A/µs · Unit A A2s A/µs W W A V V 2000 20000 100 5 ... Original
datasheet

4 pages,
231.45 Kb

100A gate turn-off thyristor E187184 PGH10016AM E187184 abstract
datasheet frame
Abstract: Off-State Voltage VGD dv/dt Switch Thyristor Tj=150°C, VRM=VRRM IF=100A Tj=125°C, VDM=VDRM , Tj=125°C, VD=2/3VDRM VRM=100V, dv/dt=20V/µs -di/dt=20A/µs Tj=25°C, VD=2/3VDRM IG=200mA -diG/dt=0.2A/µs , RL= 3 ohm RG= 7.5 ohm VGE= +/- 15V IF=100A IF=100A,VGE=-10V, d/dt=100A/µs VCE=600V,VGE=0V VGE=+ , ohm VGE= +/- 15V IF=15A IF=15A, di/dt=50A/µs - 100 - 4.0 4.0 - 6 2 4 100 80 , VRRM VRSM IO(AV) IFSM I2t -di/dt VDRM VRSM IO(AV) ITSM I2t di/dt PGM PGM(AV) IGM VGM ... Original
datasheet

3 pages,
63.46 Kb

thyristor inverter snubber thyristor PVD110-6 dc 3phase ac inverter circuit 100A gate turn-off thyristor 600V 100A thyristor 11kw PVD110PVD110-6 PVD110PVD110-6 abstract
datasheet frame
Abstract: VD=10V, IT=3A mA V µC ITM=100A, tp=500µs, di/dt=10A/µs, Vr=50V µC A µs ITM=100A, tp=500µs, di/dt=10A/µs, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs ITM=100A, tp=500µs, di/dt=10A/µs, Vr=50V , P0128SH10 P0128SH10#-12# Issue 1 P0128SH10 P0128SH10#-12# Issue 1 THs=55°C 1.00E+04 100A THs=85°C di/dt=100A/µs di/dt=100A/µs 100% Duty Cycle 100% Duty Cycle 1.00E+04 200A 100A 1.00E+03 , P0128SH10 P0128SH10#-12# Issue 1 di/dt=100A/µs Tj=125°C Tj=125°C 500A 400A 300A 1.00E+01 Energy per pulse ... Original
datasheet

12 pages,
626.53 Kb

THYRISTOR 300A 200A thyristor gate control circuit P012 Diode Westcode fast thyristor 200A Westcode N thyristor Semiconductors P0128SH10E 300A thyristor gate control circuit P0128 100a 1000v thyristor 300a 1000v thyristor P0128SH12 P0128SH10 P0128SH12 P0128SH10 abstract
datasheet frame
Abstract: Resistance *1 Value Per 1Arm *1: Value Per Module VGT VGD dv/dt tq V V V/µs µs µs µs µs mA ITM=IO,VD=2/3VDRM dv/dt=20V/µs, VR=100V -di/dt=20A/µs, Tj=125°C tgt Tj=25°C, ITM=IT(RMS) VD=100V, IG=200mA td , THYRISTOR MODULE 100A / 1200 to 1600V PAT10012 PAT10012 PAH10012 PAH10012 PAT10016 PAT10016 PAH10016 PAH10016 FEATURES , di/dt PGM PG(AV) IGM VGM VRGM Tjw Tstg Viso Ftor Conditions 50Hz Half Sine Wave condition Tc=76°C , , diG/dt=0.2A/µs · Unit A A A2s A/µs 222 2000 20000 100 5 W 1 W 2 A 10 V 5 V -40 to +125 °C ... Original
datasheet

4 pages,
241.34 Kb

PAH10016 pah1001 PAT10012 PAH10012 PAT10016 PAT10012 abstract
datasheet frame
Abstract: tq V V V/µs µs µs µs µs mA ITM=IO,VD=2/3VDRM dv/dt=20V/µs, VR=100V -di/dt=20A/µs, Tj=125°C tgt Tj=25°C, ITM=IT(RMS) VD=100V, IG=200mA td diG/dt=0.2A/µs tr IL Tj=25°C IH Tj=25°C Rth(j-c) Junction to , THYRISTOR MODULE 100A / 800V P A T 1 0 0 8 P A H 1 0 0 8 FEATURES * Isolated Base , Mounting torque Terminals Value per 1 Arm IT(RMS) IFSM I2t di/dt PGM PG(AV) IGM VGM VRGM Tjw Tstg Viso Ftor , VD=2/3VDRM, ITM=2 IO, Tj=125°C IG=200mA, diG/dt=0.2A/µs · Unit A A A2s A/µs 222 2000 20000 100 ... Original
datasheet

4 pages,
216.98 Kb

datasheet abstract
datasheet frame
Abstract: ITM=IO,VD=2/3VDRM dv/dt=20V/µs, VR=100V -di/dt=20A/µs, Tj=125°C Characteristics Turn-Off Time , THYRISTOR MODULE 100A / 1200 to 1600V PDT10012 PDT10012 PDT10016 PDT10016 PDH10012 PDH10012 PDH10016 PDH10016 FEATURES , Current di/dt Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage Peak Gate , IG=200mA, diG/dt=0.2A/µs · Max Rated Value Unit 100 A 156 Conditions Average , tgt td tr IL IH Rth(j-c) VD=2/3VDRM Tj=125°C IG=200mA, diG/dt=0.2A/µs Tj=25°C Tj=25°C ... Original
datasheet

5 pages,
317.8 Kb

PDT10016 PDT10012 PDH10016 PDH10012 PDT10012 abstract
datasheet frame

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100A V R =75V V D =67%V DRM dI/dt=30A/ m s dV/dt=20V/ m s Gate open Tj=125 5 C TYP 100 m s dV/dt I 2 t I 2 t value for fusing tp = 10ms 1800 A 2 s dI/dt Critical rate of rise of on-state current Gate supply : I G = 800mA - di G /dt = 1A / m s 100 A/ m s T stg T j Storage temperature range MIN 0.2 V tgt V D =V DRM I G = 500mA dI G /dt = 3A/ m s Tj=25 5 C TYP 2 m s I L I G =1.2 I GT Tj=25 5 MSS50-1200 MSS50-1200 MSS50-1200 MSS50-1200 MSS50-800 MSS50-800 MSS50-800 MSS50-800 MSS50 MSS50 MSS50 MSS50 THYRISTOR MODULE Document Number: 3035 Date
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3035.htm
STMicroelectronics 02/04/1999 6.55 Kb HTM 3035.htm
/dt Critical rate of rise of on-state current Gate supply : I G = 800mA - di G /dt = 1A / m s R L =3.3k W Tj=125 5 C MIN 0.2 V tgt V D =V DRM I G = 500mA dI G /dt = 3A/ m s =75V V D =67%V DRM dI/dt=30A/ m s dV/dt=20V/ m s Gate open Tj=125 5 C TYP 100 m s dV/dt Datasheet THYRISTOR MODULE MSS50-XXX MSS50-XXX MSS50-XXX MSS50-XXX 01/07/1995 6 Raw Text Format MSS50 MSS50 MSS50 MSS50 THYRISTOR MODULE April 1995 ISOTOP TM
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3035-v1.htm
STMicroelectronics 20/10/2000 8.67 Kb HTM 3035-v1.htm
100A V R =75V V D =67%V DRM dI/dt=30A/ m s dV/dt=20V/ m s Gate open Tj=125 5 C TYP 100 m s dV/dt I 2 t I 2 t value for fusing tp = 10ms 1800 A 2 s dI/dt Critical rate of rise of on-state current Gate supply : I G = 800mA - di G /dt = 1A / m s 100 A/ m s T stg T j Storage temperature range MIN 0.2 V tgt V D =V DRM I G = 500mA dI G /dt = 3A/ m s Tj=25 5 C TYP 2 m s I L I G =1.2 I GT Tj=25 5 MSS50-1200 MSS50-1200 MSS50-1200 MSS50-1200 MSS50-800 MSS50-800 MSS50-800 MSS50-800 MSS50 MSS50 MSS50 MSS50 THYRISTOR MODULE Document Number: 3035 Date
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3035-v2.htm
STMicroelectronics 14/06/1999 6.51 Kb HTM 3035-v2.htm
No abstract text available
www.datasheetarchive.com/download/80046010-742633ZC/70129-v1.pl
SGS-Thomson 12/05/1995 102.06 Kb PL 70129-v1.pl
1 1 0 /catalog/appnotes/15106.html Applicationnotes for Bipolar power transistors Title Date AN98079 AN98079 AN98079 AN98079 1.pdf: GTV4000 GTV4000 GTV4000 GTV4000 2Fh TV receiver with TDA9321H TDA9321H TDA9321H TDA9321H and TDA933xH 1998-08-19 AN10280 AN10280 AN10280 AN10280 1.pdf: 17 inch 70 kHz CRT monitor 2 1 0 /catalog/appnotes/15107.html Applicationnotes for Lighting Title Date an buJ100.pdf: Philips BUJ100 BUJ100 BUJ100 BUJ100 transistor in TO-92 suits all Philips BUJ100 BUJ100 BUJ100 BUJ100 transistor in TO-92 suits all Compact Fluorescent Lamp 3 1 0 /catalog/appnotes/15230.html Applicationnotes for Deflection Title Date AN98
www.datasheetarchive.com/files/philips/search/docindex-v1.txt
Philips 16/06/2005 2589.32 Kb TXT docindex-v1.txt