NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: ) ITQRM=4000A, diGQ/dt=6000A/us di/dt 1000A/us IGM=200A, diG/dt=100A/us VTM 3.5V (typical) IT=4000A IGT , reduce the di/dt limitation. As the GCT Thyristor has fast turn-on and turn-off operation, the , GCT Thyristor as well and permits a reduction in the anode di/dt reactor size and its power loss by , 2000A/us IF=1500A VFM 3.0V (typ) IF=3400A, Tj=125°C Qrr 3000uC (typ) IF =1500A, di/dt=1000A/us Erec 8.0J/P (typ) IF =1500A, di/dt=1000A/us Recovery Softness Factor 2 (typ) IF =1500A, di ... | Original |
8 pages, |
200a gto THYRISTOR GTO RC VOLTAGE CLAMP snubber circuit Thyristor 6kV 500a high side gate driver GTO GTO thyristor 10A 200A thyristor gate control circuit gto Gate Drive circuit thyristor 1000A GTO 100A 500V 6 thyristor driver circuit GTO 4.5kv datasheet abstract |
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| Abstract: VD=2/3VDRM Tj=125°C VD=2/3VDRM Tj=125°C ITM=IO,VD=2/3VDRM dv/dt=20V/us, VR=100V -di/dt=20A/us , PGH10016AM PGH10016AM THYRISTOR MODULE OUTLINE DRAWING 100A / 1600V Nut FEATURES * Isolated , 100A, Tj=25°C Rth(j-c) Junction to Case (Total) Part of Thyristor (1 die) Maximum Value. 20 , Turned-On Current di/dt Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage , , ITM=2 IO, Tj=125°C IG=200mA, diG/dt=0.2A/us · PGM PG(AV) IGM VGM VRGM Unit 2000 A ... | Original |
4 pages, |
PGH10016AM E187184 E187184 abstract |
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| Abstract: Tj=125°C VD=2/3VDRM Tj=125°C ITM=IO,VD=2/3VDRM dv/dt=20V/us, VR=100V -di/dt=20A/us, Tj=125°C VD=2/3VDRM Tj=125°C IG=200mA, diG/dt=0.2A/us Tj=25°C Tj=25°C Junction to Case Maximum Value. Unit , PGH1008AM PGH1008AM THYRISTOR MODULE OUTLINE DRAWING 100A / 800V Nut FEATURES * Isolated Base , of Turned-On Current di/dt Peak Gate Power Average Gate Power Peak Gate Current Peak Gate , /3VDRM, ITM=2 IO, Tj=125°C IG=200mA, diG/dt=0.2A/us · PGM PG(AV) IGM VGM VRGM Unit 2000 ... | Original |
4 pages, |
PGH1008AM E187184 E187184 abstract |
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| Abstract: Off-State Voltage VGD dv/dt Switch Thyristor Tj=150°C, VRM=VRRM IF=100A Tj=125°C, VDM=VDRM , Tj=125°C, VD=2/3VDRM VRM=100V, dv/dt=20V/us -di/dt=20A/us Tj=25°C, VD=2/3VDRM IG=200mA -diG/dt=0.2A/us , RL= 3 ohm RG= 7.5 ohm VGE= +/- 15V IF=100A IF=100A,VGE=-10V, d/dt=100A/us VCE=600V,VGE=0V VGE=+ , ohm VGE= +/- 15V IF=15A IF=15A, di/dt=50A/us - 100 - 4.0 4.0 - 6 2 4 100 80 , VRRM VRSM IO(AV) IFSM I2t -di/dt VDRM VRSM IO(AV) ITSM I2t di/dt PGM PGM(AV) IGM VGM ... | Original |
3 pages, |
thyristor inverter snubber thyristor PVD110-6 dc 3phase ac inverter circuit 100A gate turn-off thyristor 600V 100A thyristor 11kw PVD110PVD110-6 PVD110PVD110-6 abstract |
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| Abstract: 50 4 2.5 2 0.25 dv/dt VD=2/3VDRM Tj=125°C 500 tq ITM=IO,VD=2/3VDRM dv/dt=20V/us, VR=100V -di/dt=20A/us, Tj=125°C Characteristics Turn-Off Time Turn-On Time Delay Time Rise Time , THYRISTOR MODULE PCH10012 PCH10012 PCH10016 PCH10016 100A / 1200 to 1600V FEATURES * Isolated Base , Squared t ITSM I2t Critical Rate of Turned-On Current di/dt Peak Gate Power Average Gate , Non-Repetitive 2msec to 10msec VD=2/3VDRM, ITM=2 IO, Tj=125°C IG=200mA, diG/dt=0.2A/us · Max Rated Value ... | Original |
5 pages, |
PCH10016 PCH10012 PCH10012 abstract |
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| Abstract: ITM=IO,VD=2/3VDRM dv/dt=20V/us, VR=100V -di/dt=20A/us, Tj=125°C Characteristics Turn-Off Time , THYRISTOR MODULE 100A / 1200 to 1600V PDT10012 PDT10012 PDT10016 PDT10016 PDH10012 PDH10012 PDH10016 PDH10016 FEATURES , Current di/dt Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage Peak Gate , IG=200mA, diG/dt=0.2A/us · Max Rated Value Unit 100 A 156 Conditions Average , tgt td tr IL IH Rth(j-c) VD=2/3VDRM Tj=125°C IG=200mA, diG/dt=0.2A/us Tj=25°C Tj=25°C ... | Original |
5 pages, |
PDT10016 PDT10012 PDH10016 PDH10012 PDT10012 abstract |
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| Abstract: 500 tq ITM=IO,VD=2/3VDRM dv/dt=20V/us, VR=100V -di/dt=20A/us, Tj=125°C Symbol Peak , THYRISTOR MODULE P D T 1 0 0 8 100A / 800V P D H 1 0 0 8 FEATURES OUTLINE DRAWING , Rate of Turned-On Current di/dt Peak Gate Power Average Gate Power Peak Gate Current Peak Gate , /3VDRM, ITM=2 IO, Tj=125°C IG=200mA, diG/dt=0.2A/us · Max Rated Value Unit 100 A 156 , Tj=125°C IG=200mA, diG/dt=0.2A/us Tj=25°C Tj=25°C Junction to Case Base Plate to Heat Sink Rth(c-f ... | Original |
5 pages, |
datasheet abstract |
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| Abstract: 0.25 dv/dt VD=2/3VDRM Tj=125°C 500 tq ITM=IO,VD=2/3VDRM dv/dt=20V/us, VR=100V -di/dt=20A/us, Tj=125°C Symbol Peak Off-State Current Peak Reverse Current Peak Forward Voltage , THYRISTOR MODULE PCH1008 PCH1008 100A / 800V OUTLINE DRAWING FEATURES * Isolated Base , On-State Current I Squared t ITSM I2t Critical Rate of Turned-On Current di/dt Peak Gate , ,1Pulse, Non-Repetitive 2msec to 10msec VD=2/3VDRM, ITM=2 IO, Tj=125°C IG=200mA, diG/dt=0.2A/us · ... | Original |
5 pages, |
PCH1008 PCH1008 abstract |
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| Abstract: VD=10V, IT=3A mA V uC ITM=100A, tp=500us, di/dt=10A/us, Vr=50V uC A us ITM=100A, tp=500us, di/dt=10A/us, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/us ITM=100A, tp=500us, di/dt=10A/us, Vr=50V , P0128SH10 P0128SH10#-12# Issue 1 P0128SH10 P0128SH10#-12# Issue 1 THs=55°C 1.00E+04 100A THs=85°C di/dt=100A/us di/dt=100A/us 100% Duty Cycle 100% Duty Cycle 1.00E+04 200A 100A 1.00E+03 , P0128SH10 P0128SH10#-12# Issue 1 di/dt=100A/us Tj=125°C Tj=125°C 500A 400A 300A 1.00E+01 Energy per pulse ... | Original |
12 pages, |
P012 THYRISTOR 300A P0128SH12 200A thyristor gate control circuit P0128 300A thyristor gate control circuit Westcode N thyristor Semiconductors 300a 1000v thyristor P0128SH10 100a 1000v thyristor 100A 1000V thyristor ixys P0128SH10 abstract |
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| Abstract: It=4000A, Vd=2250V, di/dt=1000A/|is Igm=200A, die/dt= 100A/(is, Tj=125deg (See Fig. 1,2) - - 3 us td , /dt=1000A/us Igm=200A, diG/dt=100A/us , /dt=100A/|is, Tj=25/125deg f=60Hz (See Fig. 1,2) 1000 A/ps Vfgm Peak forward gate voltage 10 V Vrgm , , Vdm=4500V, Vd=2250V Tj=125deg, Cc=6|iF, Lc=0.3^H, Vrg=20V digq/dt=6000A/ns (See Fig. 1,3) - - 3 Us Eoff , CONDITION Vd=2250V,Vdm=Vd+0.44*It Tj=125deg, diGQ/dt=6000A/us Cc=6uF, Lc-0.3uH ... | OCR Scan |
8 pages, |
thyristor cdi gct thyristor HIGH POWER INVERTER power inverter press pack thyristor press pack thyristor 10000 VDRM FGC4000BX-90DS sinewave inverter GCT mitsubishi HIGH VOLTAGE THYRISTOR FGC4000BX-90DS abstract |
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| = 800mA - di G /dt = 1A / m s 100 A/ m s T stg T j Storage temperature range Operating = 100A tp= 380 m s Tj=25 5 C MAX 1.7 V I DRM I RRM V DRM Rated V RRM Rated Tj=25 5 C MAX 0.05 mA Tj=125 5 C MAX 10 tq I T = 100A V R =75V V D =67%V DRM dI/dt=30A/ m s dV/dt DRM I G = 500mA dI G /dt = 3A/ m s Tj=25 5 C TYP 2 m s I L I G =1.2 I GT Tj=25 5 ST | THYRISTOR MODULE Datasheet THYRISTOR www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3035-v1.htm |
STMicroelectronics | 20/10/2000 | 8.67 Kb | HTM | 3035-v1.htm |
| Gate supply : I G = 800mA - di G /dt = 1A / m s 100 A/ m s T stg T j Storage temperature range T = 100A V R =75V V D =67%V DRM dI/dt=30A/ m s dV/dt=20V/ m s Gate open Tj=125 5 C TYP 100 m s dV/dt MIN 0.2 V tgt V D =V DRM I G = 500mA dI G /dt = 3A/ m s Tj=25 5 C TYP 2 m s I L I G =1.2 I GT Tj=25 5 C TYP 60 mA MAX 120 I H I T = 0.5A gate open Tj=25 5 C TYP 40 mA MAX 80 V TM I TM = 100A tp= 380 m s ST | THYRISTOR MODULE MSS50-1200 MSS50-1200 MSS50-1200 MSS50-1200 MSS50-800 MSS50-800 MSS50-800 MSS50-800 MSS50 MSS50 MSS50 MSS50 THYRISTOR MODULE Document Number www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3035.htm |
STMicroelectronics | 02/04/1999 | 6.55 Kb | HTM | 3035.htm |
| Gate supply : I G = 800mA - di G /dt = 1A / m s 100 A/ m s T stg T j Storage temperature range T = 100A V R =75V V D =67%V DRM dI/dt=30A/ m s dV/dt=20V/ m s Gate open Tj=125 5 C TYP 100 m s dV/dt MIN 0.2 V tgt V D =V DRM I G = 500mA dI G /dt = 3A/ m s Tj=25 5 C TYP 2 m s I L I G =1.2 I GT Tj=25 5 C TYP 60 mA MAX 120 I H I T = 0.5A gate open Tj=25 5 C TYP 40 mA MAX 80 V TM I TM = 100A tp= 380 m s ST | THYRISTOR MODULE MSS50-1200 MSS50-1200 MSS50-1200 MSS50-1200 MSS50-800 MSS50-800 MSS50-800 MSS50-800 MSS50 MSS50 MSS50 MSS50 THYRISTOR MODULE Document Number www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3035-v2.htm |
STMicroelectronics | 14/06/1999 | 6.51 Kb | HTM | 3035-v2.htm |
| tp = 10ms 400 I 2 t I 2 t value for fusing tp = 10ms 800 A 2 s dI/dt Critical rate of rise of on-state current Gate supply : I G = 400mA - di G /dt = 1A / m s 100 A/ m s T stg T j G = 500mA dI G /dt = 3A/ m s Tj=25 5 C TYP 2 m s I L I G =1.2 I GT Tj=25 5 C TYP ST | THYRISTOR MODULE Datasheet THYRISTOR Document Format 3034 01/07/1995 6 Raw Text Format MSS40 MSS40 MSS40 MSS40 THYRISTOR www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3034-v1.htm |
STMicroelectronics | 20/10/2000 | 8.6 Kb | HTM | 3034-v1.htm |
| fusing tp = 10ms 800 A 2 s dI/dt Critical rate of rise of on-state current Gate supply : I G = 400mA - di G /dt = 1A / m s 100 A/ m s T stg T j Storage temperature range Operating junction temperature range .2 V tgt V D =V DRM I G = 500mA dI G /dt = 3A/ m s Tj=25 5 C TYP 2 m s I L I G =1.2 I GT Tj=25 5 C TYP ST | THYRISTOR MODULE MSS40-1200 MSS40-1200 MSS40-1200 MSS40-1200 MSS40-800 MSS40-800 MSS40-800 MSS40-800 MSS40 MSS40 MSS40 MSS40 THYRISTOR MODULE Document Number following formats: Portable Document Format and Raw Text Format MSS40 MSS40 MSS40 MSS40 THYRISTOR MODULE . V DRM www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3034-v2.htm |
STMicroelectronics | 14/06/1999 | 6.46 Kb | HTM | 3034-v2.htm |
| fusing tp = 10ms 800 A 2 s dI/dt Critical rate of rise of on-state current Gate supply : I G = 400mA - di G /dt = 1A / m s 100 A/ m s T stg T j Storage temperature range Operating junction temperature range .2 V tgt V D =V DRM I G = 500mA dI G /dt = 3A/ m s Tj=25 5 C TYP 2 m s I L I G =1.2 I GT Tj=25 5 C TYP ST | THYRISTOR MODULE MSS40-1200 MSS40-1200 MSS40-1200 MSS40-1200 MSS40-800 MSS40-800 MSS40-800 MSS40-800 MSS40 MSS40 MSS40 MSS40 THYRISTOR MODULE Document Number following formats: Portable Document Format and Raw Text Format MSS40 MSS40 MSS40 MSS40 THYRISTOR MODULE . V DRM www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3034.htm |
STMicroelectronics | 02/04/1999 | 6.5 Kb | HTM | 3034.htm |
| of rise of on-state current Gate supply : I G = 800mA - di G /dt = 1A / m s 100 A/ m s T V D =V DRM I G = 500mA dI G /dt = 3A/ m s Tj=25 5 C TYP 2 m s I L I G =1.2 I ST | DIODE / THYRISTOR MODULE Datasheet DIODE / THYRISTOR MODULE MDS80-XXX MDS80-XXX MDS80-XXX MDS80-XXX Document Format Size Document Number Date Update Pages PRELIMINARY DATA DIODE / THYRISTOR MODULE April 1995 ISOTOP TM (Plastic) Screw version ABSOLUTE RATINGS www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3746-v1.htm |
STMicroelectronics | 20/10/2000 | 7.65 Kb | HTM | 3746-v1.htm |
| -state current Gate supply : I G = 800mA - di G /dt = 1A / m s 100 A/ m s T stg T j Storage = 500mA dI G /dt = 3A/ m s Tj=25 5 C TYP 2 m s I L I G =1.2 I GT Tj=25 5 C TYP 60 m ST | DIODE / THYRISTOR MODULE Datasheet DIODE / THYRISTOR MODULE MDS35-XXX MDS35-XXX MDS35-XXX MDS35-XXX Document Format Size Document Number Date Update Pages DIODE / THYRISTOR MODULE April 1995 ISOTOP TM (Plastic) Screw version ABSOLUTE RATINGS (limiting www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3032-v1.htm |
STMicroelectronics | 20/10/2000 | 10.91 Kb | HTM | 3032-v1.htm |
| -state current Gate supply : I G = 800mA - di G /dt = 1A / m s 100 A/ m s T stg T j Storage = 500mA dI G /dt = 3A/ m s Tj=25 5 C TYP 2 m s I L I G =1.2 I GT Tj=25 5 C TYP 60 m ST | DIODE / THYRISTOR MODULE Datasheet DIODE / THYRISTOR MODULE MDS50-XXX MDS50-XXX MDS50-XXX MDS50-XXX Document Format Size Document Number Date Update Pages DIODE / THYRISTOR MODULE April 1995 ISOTOP TM (Plastic) Screw version ABSOLUTE RATINGS (limiting www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3033-v1.htm |
STMicroelectronics | 20/10/2000 | 10.89 Kb | HTM | 3033-v1.htm |
| t I 2 t value for fusing tp = 10ms 800 A 2 s dI/dt Critical rate of rise of on-state current Gate supply : I G = 800mA - di G /dt = 1A / m s 100 A/ m s T stg T j Storage temperature range Operating .5 V V GD V D =V DRM R L =3.3k W Tj=125 5 C MIN 0.2 V tgt V D =V DRM I G = 500mA dI G /dt = 3A/ m s Tj ST | DIODE / THYRISTOR MODULE MDS35-1000 MDS35-1000 MDS35-1000 MDS35-1000 MDS35-1200 MDS35-1200 MDS35-1200 MDS35-1200 MDS35-800 MDS35-800 MDS35-800 MDS35-800 MDS35 MDS35 MDS35 MDS35 DIODE / THYRISTOR Format MDS35 MDS35 MDS35 MDS35 DIODE / THYRISTOR MODULE April 1995 ISOTOP TM (Plastic) Screw version ABSOLUTE www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3032-v2.htm |
STMicroelectronics | 14/06/1999 | 8.61 Kb | HTM | 3032-v2.htm |