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HILO_3P_ALL-100A Texas Instruments ALL-100A visit Texas Instruments

THYRISTOR di/dt 100A/uS

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: VD=10V, IT=3A mA V µC ITM=100A, tp=500µs, di/dt=10A/µs, Vr=50V µC A µs ITM=100A, tp=500µs, di/dt=10A/µs, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs ITM=100A, tp=500µs, di/dt=10A/µs, Vr , THs=55°C 1.00E+04 100A THs=85°C di/dt=100A/µs di/dt=100A/µs 100% Duty Cycle , 1.00E+02 P0128SH10#-12# Issue 1 P0128SH10#-12# Issue 1 di/dt=100A/µs Tj=125°C Tj , pulse (J) di/dt=500A/µs 1.00E+00 1.00E+00 200A 100A 200A 100A 1.00E-01 1.00E-01 Westcode Semiconductors
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P0128SH12 VDRM/100 P0128SH10E D-68623

P0128SH

Abstract: P0128SH10 , tp=500µs, di/dt=10A/µs, Vr=50V µC A µs ITM=100A, tp=500µs, di/dt=10A/µs, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs ITM=100A, tp=500µs, di/dt=10A/µs, Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/µs µs RthJ-C , #-12# Issue 1 THs=55°C 100A 1.00E-02 Pulse width (s) Commutation rate - di/dt (A/µs) THs , 100A THs=85°C di/dt=100A/µs di/dt=100A/µs 100% Duty Cycle 100% Duty Cycle 1.00E+04 , Square wave energy per pulse 1.00E+02 P0128SH10#-12# Issue 1 di/dt=100A/µs Tj=125°C Tj
Westcode Semiconductors
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P0128SH 100A 1000V thyristor ixys 100a 1000v thyristor P0128 fast thyristor 200A gate control circuits 300a 1000v thyristor

11kw

Abstract: 600V 100A thyristor Off-State Voltage VGD dv/dt Switch Thyristor Tj=150°C, VRM=VRRM IF=100A Tj=125°C, VDM=VDRM Tj , /dt=20V/µs -di/dt=20A/µs Tj=25°C, VD=2/3VDRM IG=200mA -diG/dt=0.2A/µs VCE=600V,VGE=0V VGE=+/- , VGE= +/- 15V IF=100A IF=100A,VGE=-10V, d/dt=100A/µs VCE=600V,VGE=0V VGE=+/- 20V,VCE=0V IC=50A,VGE , =15A, di/dt=50A/µs - 100 - 4.0 4.0 - 6 2 4 100 80 2.1 10000 0.15 0.25 0.20 0.45 , VRRM VRSM IO(AV) IFSM I2t -di/dt VDRM VRSM IO(AV) ITSM I2t di/dt PGM PGM(AV) IGM VGM
Nihon Inter Electronics
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PVD110-6 11kw 600V 100A thyristor thyristor inverter dc 3phase ac inverter circuit 100A gate turn-off thyristor PVD110PVD110-6

GTO thyristor 4500V 4000A

Abstract: FAST SWITCHING THYRISTOR ST ) ITQRM=4000A, diGQ/dt=6000A/µs di/dt 1000A/µs IGM=200A, diG/dt=100A/µs VTM 3.5V (typical) IT , reduce the di/dt limitation. As the GCT Thyristor has fast turn-on and turn-off operation, the , GCT Thyristor as well and permits a reduction in the anode di/dt reactor size and its power loss by , 2000A/µs IF=1500A VFM 3.0V (typ) IF=3400A, Tj=125°C Qrr 3000µC (typ) IF =1500A, di/dt=1000A/µs Erec 8.0J/P (typ) IF =1500A, di/dt=1000A/µs Recovery Softness Factor 2 (typ) IF =1500A, di/dt
Powerex
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GTO thyristor 4500V 4000A FAST SWITCHING THYRISTOR ST GTO thyristor driver 10A fast Gate Turn-off Thyristor GTO thyristor GTO gate drive unit mitsubishi FGC4000BX-90DS GU-C40 FD1500BV-90DA FD500JV-90DA

PGH10016AM

Abstract: =2/3VDRM Tj=125°C VD=2/3VDRM Tj=125°C ITM=IO,VD=2/3VDRM dv/dt=20V/µs, VR=100V -di/dt=20A/µs, Tj , PGH10016AM THYRISTOR MODULE OUTLINE DRAWING 100A / 1600V Nut FEATURES * Isolated , = 100A, Tj=25°C Rth(j-c) Junction to Case (Total) Part of Thyristor (1 die) Maximum Value. 20 , Turned-On Current di/dt Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage , , ITM=2 IO, Tj=125°C IG=200mA, diG/dt=0.2A/µs · PGM PG(AV) IGM VGM VRGM Unit 2000 A
Nihon Inter Electronics
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E187184

PGH1008AM

Abstract: =125°C ITM=IO,VD=2/3VDRM dv/dt=20V/µs, VR=100V -di/dt=20A/µs, Tj=125°C VD=2/3VDRM Tj=125°C IG=200mA, diG/dt , PGH1008AM THYRISTOR MODULE OUTLINE DRAWING 100A / 800V Nut FEATURES * Isolated Base * 3 Phase Converter with Rush-Current Controllable Thyristor * High Surge Capability * UL , Turned-On Current di/dt Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage , , ITM=2 IO, Tj=125°C IG=200mA, diG/dt=0.2A/µs · PGM PG(AV) IGM VGM VRGM Unit 2000 A
Nihon Inter Electronics
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008AM

100A gate turn-off thyristor

Abstract: =-40°C VD=6V,IT=1A Tj=25°C Tj=125°C VD=2/3VDRM Tj=125°C VD=2/3VDRM Tj=125°C ITM=IO,VD=2/3VDRM dv/dt=20V/µs, VR=100V -di/dt=20A/µs, Tj=125°C VD=2/3VDRM Tj=125°C IG=200mA, diG/dt=0.2A/µs Tj=25°C Tj=25°C Junction , THYRISTOR MODULE 100A / 1600V FEATURES * Isolated Base * 3 Phase Converter with Rush-Current , Power Average Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage ITSM I2t di/dt , =2/3VDRM, ITM=2 IO, Tj=125°C IG=200mA, diG/dt=0.2A/µs · Unit A A2s A/µs W W A V V 2000 20000 100 5
Nihon Inter Electronics
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Abstract: =25°C Tj=125°C VD=2/3VDRM Tj=125°C VD=2/3VDRM Tj=125°C ITM=IO,VD=2/3VDRM dv/dt=20V/µs, VR=100V -di/dt=20A/µs, Tj=125°C VD=2/3VDRM Tj=125°C IG=200mA, diG/dt=0.2A/µs Tj=25°C Tj=25°C Junction to Case Maximum , THYRISTOR MODULE 100A / 800V FEATURES * Isolated Base * 3 Phase Converter with Rush-Current , Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage ITSM I2t di/dt PGM PG(AV) IGM , =2 IO, Tj=125°C IG=200mA, diG/dt=0.2A/µs · Unit A A2s A/µs W W A V V 2000 20000 100 5 1 2 10 5 Nihon Inter Electronics
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oz 9981

Abstract: SPT402A ma V Maximum peak recovery current IRM di/dt = 2 A/us TJ = 115oC 110 A snappiness F = 2-3 Critical rate of rise of on-state current di/dt rep TJ=115oC SPT402A 100 60 Hz , Turn-off time Toff 5A/us,-100V 20V/us to 2000V 400 10 Commutating di/dt, (A/us) 100 us , time while a corresponding high di/dt rating depends on the choice of gating method. The factory , Commutating di/dt V V 2000 Peak Recovery Current, Irm, (A) 1000 Process Limit Itm = 100 kA
Silicon Power
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SPT402B oz 9981 THYRISTOR di/dt 100A/uS SPT402

anode gate thyristor

Abstract: fast thyristor 200A gate control circuits chip If critical rate-of-rise of on-state current di/dt is 100A/µs, for example, thyristor may fail when anode current reaches more than 100A at 1 µs, 10 Thyristor turns on. Nihon Inter , =200mA and , diG/dt=0.2A/µs, is specified as standard condition for di/dt for a thyristor that has maximum , gate ratings, is also valid to improve di/dt capability of thyristor itself. Critical rate of rise , is a typical cause of thyristor malfunctions. Thyristor chips which have dv/dt capability of 100V/µs
Nihon Inter Electronics
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anode gate thyristor 3phase thyristor firing circuit 3 phase thyristor dc drive snubber FOR 3PHASE BRIDGE RECTIFIER 600A thyristor scr pgh15016am PGH308 PGH3016AM PGH508AM PGH5016AM PGH758AM PGH7516AM
Abstract: THs=55° C THs=55° C di/dt=100A/µs R0929LC10x-12x R0929LS10x-12x Issue Issue 1 2 , 1.00E+02 4kA 1.00E+02 1.00E+01 THs=85° C THs=85° C di/dt=500A/µs di/dt=100A/µs , R0929LC10x-12x R0929LS10x-12x Issue Issue 1 2 di/dt=500A/µs Tj=125° C di/dt=100A/µs Tj , =3A mA Tj=25° C mA VD=67% VDRM, IT=1500A, di/dt=60A/µs, IFG=2A, tr=0.5µs, Tj=25° C Page 2 of 12 µs µC µC ITM=1000A, tp=1000µs, di/dt=60A/µs, Vr=50V A µs ITM IXYS
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R0929LC10 R0929LC12 R0929LC12C
Abstract: Commutation rate - di/dt (A/µs) Page 8 of 12 August 2012 Distributed gate thyristor type R1446NC12x , di/dt=100A/µs R1446NS10x-12x R1446NC12x Issue 12 Issue 1.00E+00 1.00E-05 R1446NS10x , =85° C di/dt=500A/µs di/dt=100A/µs R1446NS10x-12x R1446NC12x Issue Issue 12 R1446NS10x , -12x R1446NC12x Issue 12 Issue di/dt=100A/µs di/dt=500A/µs Tj=125° C Tj=125° C 1.00E+02 , A/µs (di/dt)cr 2 6 VRGM Peak reverse gate voltage 5 V PG(AV) Mean IXYS
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R1446NC12 R1446NC12F

R1158NS

Abstract: D350CH 1.00E+05 R1158NS24#-26# Issue 1 R1158NS24#-26# Issue 1 di/dt=100A/µs 500A 1.00E+04 di , #-26# Issue 1 R1158NS24#-26# Issue 1 di/dt=100A/µs di/dt=500A/µs THs=85°C THs=85°C 100% Duty , 1.00E+03 R1158NS24#-26# Issue 1 R1158NS24#-26# Issue 1 di/dt=100A/µs di/dt=500A/µs Tj , tgt Turn-on time - 1.5 3.0 VD=67% VDRM, ITM=1000A, di/dt=60A/µs, IFG=2A, tr=0.5µs, Tj , Tj=25°C V VD=10V, IT=3A mA V µC µC ITM=1000A, tp=1000µs, di/dt=60A/µs, Vr=50V A
Westcode Semiconductors
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R1158NS D350CH R1158 Westcode thyristor datasheet thyristor 2.6 snubber capacitor Westcode N thyristor Semiconductors R1158NS26 D350CH20-26 R1158NS24P

R1279NS

Abstract: R1279N #-25# Issue 1 di/dt=100A/µs di/dt=500A/µs THs=55°C THs=55°C 1kA 500A 100% Duty Cycle , 1.00E+05 R1279NS22#-25# Issue 1 di/dt=100A/µs R1279NS22#-25# Issue 1 di/dt=500A/µs 250A THs , wave energy per pulse 1.00E+03 1.00E+03 R1279NS22#-25# Issue 1 di/dt=100A/µs R1279NS22 , tgt Turn-on time - 1.0 2.0 VD=67% VDRM, ITM=1000A, di/dt=60A/µs, IFG=2A, tr=0.5µs, Tj , Tj=25°C V VD=10V, IT=3A mA V µC ITM=1000A, tp=1000µs, di/dt=60A/µs, Vr=50V Page 2
Westcode Semiconductors
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D391CH18-25 R1279NS R1279N thyristor 50V 1000A snubber thyristor R1279 K0227 R1279NS25 R1279NS24L

R1158NC26X

Abstract: R1158 wave frequency ratings 1.00E+05 R1158NC26x Issue 2 di/dt=100A/µs TK=55°C 500A 100% Duty Cycle 500A , per pulse 1.00E+03 R1158NC26x Issue 2 di/dt=100A/µs Tj=125°C di/dt=500A/µs Tj , =1000A, tp=1000µs, di/dt=60A/µs, Vr=50V, Vdr=33%VDRM, dVdr/dt=20V/µs ITM=1000A, tp=1000µs, di/dt=60A/µs, Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/µs Double side cooled Single side cooled ITM=1000A, tp=1000µs, di/dt=60A/µs , =67% VDRM, ITM=1000A, di/dt=60A/µs, IFG=2A, tr=0.5µs, Tj=25°C VD=10V, IT=3A ITM=2000A ITM=3500A UNITS V
IXYS
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R1158NC26X R1158NC26 R1158NC26P
Abstract: 1.00E+05 1.00E+05 R1158NC26x Issue 2 R1158NC26x Issue 2 di/dt=100A/µs di/dt=500A/µs THs , 1.00E+03 R1158NC26x Issue 2 R1158NC26x Issue 2 di/dt=100A/µs di/dt=500A/µs Tj=125° C , of on-state current (non-repetitive), (Note 6) 1500 A/µs 5 V (di/dt)cr VRGM 2 , =25° V V D=10V, IT=3A mA V mA VD=67% VDRM, ITM=1000A, di/dt=60A/µs, IFG=2A, tr=0.5µs, Tj=25° C µC ITM=1000A, tp=1000µs, di/dt=60A/µs, Vr=50V Page 2 of 12 µC A µs ITM IXYS
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R1178NC14

Abstract: 1.00E+02 1.00E+01 1.00E+01 THs=55° C THs=55° C di/dt=100A/µs R1178NS12x-14x R1178NC14x , 2kA 3kA 1.00E+02 5kA 5kA 1.00E+02 1.00E+01 THs=85° C THs=85° C di/dt=100A/µs , -14x R1178NC14x Issue 2 1 R1178NS12x-14x R1178NC14x Issue 2 Issue 1 di/dt=100A/µs di/dt=500A/µs , A/µs (di/dt)cr 2 6 VRGM Peak reverse gate voltage 5 V PG(AV) Mean , resistance, junction to - - ITM=1000A, tp=1000µs, di/dt=60A/µs, Vr=50V, Vdr=80%VDRM, dVdr/dt
IXYS
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R1178NC14 R1178NC14F

R500CH28 Westcode IXYS

Abstract: R2475ZC20 1.00E+05 R2475ZC20#-28# Issue 1 R2475ZC20#-28# Issue 1 di/dt=100A/µs TK=55°C di/dt=500A/µs , /dt=100A/µs 1kA di/dt=500A/µs 1kA TK=85°C 2kA 2kA 100% Duty Cycle 1.00E+04 , R2475ZC20#-28# Issue 1 di/dt=100A/µs di/dt=500A/µs Tj=125°C Tj=125°C 1.00E+02 , , ITM=4000A, di/dt=60A/µs, IFG=2A, tr=0.5µs, Tj=25°C µs Qrr Recovered charge - 3900 , ITM=4000A, tp=2000µs, di/dt=60A/µs, Vr=100V A µs ITM=4000A, tp=2000µs, di/dt=60A/µs, Vr
Westcode Semiconductors
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R500CH28 R500CH28 Westcode IXYS R2475ZC28 R2475ZC22N

R1127NC

Abstract: R1127NC32 #-36# Issue 2 R1127NC32#-36# Issue 2 di/dt=500A/µs di/dt=100A/µs 250A THs=55°C THs , /dt=500A/µs di/dt=100A/µs THs=85°C THs=85°C 250A 100% Duty Cycle 1.00E+04 1.00E-02 , 1.00E+03 R1127NC32#-36# Issue 2 di/dt=100A/µs R1127NC32#-36# Issue 2 di/dt=500A/µs Tj=125°C Tj , 3.0 VD=67% VDRM, ITM=1000A, di/dt=60A/µs, IFG=2A, tr=0.5µs, Tj=25°C µs Qrr Recovered , =10V, IT=3A mA V µC ITM=1000A, tp=1000µs, di/dt=60A/µs, Vr=50V Page 2 of 12 A µs ITM
Westcode Semiconductors
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R1127NC rc snubber calculation R1127N RC snubber thyristor design R1127NC36 D315CH21-36 R1127NC34S

R2619Zc

Abstract: Westcode Semiconductors =55°C di/dt=100A/µs di/dt=500A/µs 1kA 2kA 100% Duty Cycle 100% Duty Cycle 1.00E+04 , =85°C R2619ZC18#-25# Issue 3 THs=85°C 1kA 1.00E-03 Pulse width (s) 1kA di/dt=100A/µs di/dt , 1.00E+03 R2619ZC18#-25# Issue 3 di/dt=500A/µs R2619ZC18#-25# Issue 3 di/dt=100A/µs Tj , 0.8 1.5 tgt Turn-on time - 1.5 3.0 VD=67% VDRM, ITM=1500A, di/dt=60A/µs, IFG , Wt Weight Tj=25°C V VD=10V, IT=3A mA V µC ITM=4000A, tp=1000µs, di/dt=60A/µs, Vr
Westcode Semiconductors
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R2619ZC25 R600CH18-21 R2619ZC25K R2619Zc Westcode Semiconductors r2619 westcode 10710 7850A
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