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THYRISTOR di/dt 100A/uS

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Abstract: VD=10V, IT=3A mA V ÂuC ITM=100A, tp=500Âus, di/dt=10A/Âus, Vr=50V ÂuC A Âus ITM=100A, tp=500Âus, di/dt=10A/Âus, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/Âus ITM=100A, tp=500Âus, di/dt=10A/Âus, Vr , THs=55°C 1.00E+04 100A THs=85°C di/dt=100A/Âus di/dt=100A/Âus 100% Duty Cycle , 1.00E+02 P0128SH10 P0128SH10#-12# Issue 1 P0128SH10 P0128SH10#-12# Issue 1 di/dt=100A/Âus Tj=125°C Tj , pulse (J) di/dt=500A/Âus 1.00E+00 1.00E+00 200A 100A 200A 100A 1.00E-01 00E-01 1.00E-01 00E-01 ... Westcode Semiconductors
Original
datasheet

12 pages,
502 Kb

P0128SH10 P0128SH12 TEXT
datasheet frame
Abstract: , tp=500us, di/dt=10A/us, Vr=50V uC A us ITM=100A, tp=500us, di/dt=10A/us, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/us ITM=100A, tp=500us, di/dt=10A/us, Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/us us RthJ-C , #-12# Issue 1 THs=55°C 100A 1.00E-02 00E-02 Pulse width (s) Commutation rate - di/dt (A/us) THs , 100A THs=85°C di/dt=100A/us di/dt=100A/us 100% Duty Cycle 100% Duty Cycle 1.00E+04 , Square wave energy per pulse 1.00E+02 P0128SH10 P0128SH10#-12# Issue 1 di/dt=100A/us Tj=125°C Tj ... Westcode Semiconductors
Original
datasheet

12 pages,
626.53 Kb

P012 200A thyristor gate control circuit THYRISTOR 300A Diode Westcode fast thyristor 200A 300A thyristor gate control circuit Westcode thyristor P0128SH10E Westcode N thyristor Semiconductors 300a 1000v thyristor P0128 P0128SH12 P0128SH10 P0128SH12 100a 1000v thyristor P0128SH10 P0128SH12 P0128SH10 P0128SH10 P0128SH12 100A 1000V thyristor ixys P0128SH TEXT
datasheet frame
Abstract: Off-State Voltage VGD dv/dt Switch Thyristor Tj=150°C, VRM=VRRM IF=100A Tj=125°C, VDM=VDRM Tj , /dt=20V/us -di/dt=20A/us Tj=25°C, VD=2/3VDRM IG=200mA -diG/dt=0.2A/us VCE=600V,VGE=0V VGE=+/- , VGE= +/- 15V IF=100A IF=100A,VGE=-10V, d/dt=100A/us VCE=600V,VGE=0V VGE=+/- 20V,VCE=0V IC=50A,VGE , =15A, di/dt=50A/us - 100 - 4.0 4.0 - 6 2 4 100 80 2.1 10000 0.15 0.25 0.20 0.45 , VRRM VRSM IO(AV) IFSM I2t -di/dt VDRM VRSM IO(AV) ITSM I2t di/dt PGM PGM(AV) IGM VGM ... Nihon Inter Electronics
Original
datasheet

3 pages,
63.46 Kb

snubber thyristor PVD110-6 igbt 500V 1A dc 3phase ac inverter circuit 100A gate turn-off thyristor thyristor inverter 600V 100A thyristor 11kw PVD110PVD110-6 TEXT
datasheet frame
Abstract: ) ITQRM=4000A, diGQ/dt=6000A/us di/dt 1000A/us IGM=200A, diG/dt=100A/us VTM 3.5V (typical) IT , reduce the di/dt limitation. As the GCT Thyristor has fast turn-on and turn-off operation, the , GCT Thyristor as well and permits a reduction in the anode di/dt reactor size and its power loss by , 2000A/us IF=1500A VFM 3.0V (typ) IF=3400A, Tj=125°C Qrr 3000uC (typ) IF =1500A, di/dt=1000A/us Erec 8.0J/P (typ) IF =1500A, di/dt=1000A/us Recovery Softness Factor 2 (typ) IF =1500A, di/dt ... Powerex
Original
datasheet

8 pages,
478.26 Kb

Thyristor 6kV 500a gct thyristor Thyristor 500A thyristor 1000A 6 thyristor driver circuit 100a 1000v GTO RC inductive load thyristor design GTO thyristor 10A GTO 100A 500V 100A 1000V thyristor gto Gate Drive circuit MITSUBISHI GATE TURN-OFF THYRISTOR gto GTO 4.5kv GTO gate drive unit mitsubishi GTO thyristor 10A fast Gate Turn-off Thyristor GTO thyristor driver FAST SWITCHING THYRISTOR ST GTO thyristor 4500V 4000A TEXT
datasheet frame
Abstract: =2/3VDRM Tj=125°C VD=2/3VDRM Tj=125°C ITM=IO,VD=2/3VDRM dv/dt=20V/us, VR=100V -di/dt=20A/us, Tj , PGH10016AM PGH10016AM THYRISTOR MODULE OUTLINE DRAWING 100A / 1600V Nut FEATURES * Isolated , = 100A, Tj=25°C Rth(j-c) Junction to Case (Total) Part of Thyristor (1 die) Maximum Value. 20 , Turned-On Current di/dt Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage , , ITM=2 IO, Tj=125°C IG=200mA, diG/dt=0.2A/us · PGM PG(AV) IGM VGM VRGM Unit 2000 A ... Nihon Inter Electronics
Original
datasheet

4 pages,
231.47 Kb

PGH10016AM TEXT
datasheet frame
Abstract: =125°C ITM=IO,VD=2/3VDRM dv/dt=20V/us, VR=100V -di/dt=20A/us, Tj=125°C VD=2/3VDRM Tj=125°C IG=200mA, diG/dt , PGH1008AM PGH1008AM THYRISTOR MODULE OUTLINE DRAWING 100A / 800V Nut FEATURES * Isolated Base * 3 Phase Converter with Rush-Current Controllable Thyristor * High Surge Capability * UL , Turned-On Current di/dt Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage , , ITM=2 IO, Tj=125°C IG=200mA, diG/dt=0.2A/us · PGM PG(AV) IGM VGM VRGM Unit 2000 A ... Nihon Inter Electronics
Original
datasheet

4 pages,
236.02 Kb

PGH1008AM TEXT
datasheet frame
Abstract: =-40°C VD=6V,IT=1A Tj=25°C Tj=125°C VD=2/3VDRM Tj=125°C VD=2/3VDRM Tj=125°C ITM=IO,VD=2/3VDRM dv/dt=20V/us, VR=100V -di/dt=20A/us, Tj=125°C VD=2/3VDRM Tj=125°C IG=200mA, diG/dt=0.2A/us Tj=25°C Tj=25°C Junction , THYRISTOR MODULE 100A / 1600V FEATURES * Isolated Base * 3 Phase Converter with Rush-Current , Power Average Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage ITSM I2t di/dt , =2/3VDRM, ITM=2 IO, Tj=125°C IG=200mA, diG/dt=0.2A/us · Unit A A2s A/us W W A V V 2000 20000 100 5 ... Nihon Inter Electronics
Original
datasheet

4 pages,
231.45 Kb

100A gate turn-off thyristor E187184 TEXT
datasheet frame
Abstract: =25°C Tj=125°C VD=2/3VDRM Tj=125°C VD=2/3VDRM Tj=125°C ITM=IO,VD=2/3VDRM dv/dt=20V/us, VR=100V -di/dt=20A/us, Tj=125°C VD=2/3VDRM Tj=125°C IG=200mA, diG/dt=0.2A/us Tj=25°C Tj=25°C Junction to Case Maximum , THYRISTOR MODULE 100A / 800V FEATURES * Isolated Base * 3 Phase Converter with Rush-Current , Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage ITSM I2t di/dt PGM PG(AV) IGM , =2 IO, Tj=125°C IG=200mA, diG/dt=0.2A/us · Unit A A2s A/us W W A V V 2000 20000 100 5 1 2 10 5 ... Nihon Inter Electronics
Original
datasheet

4 pages,
236.01 Kb

E187184 TEXT
datasheet frame
Abstract: ma V Maximum peak recovery current IRM di/dt = 2 A/us TJ = 115oC 110 A snappiness F = 2-3 Critical rate of rise of on-state current di/dt rep TJ=115oC SPT402A SPT402A 100 60 Hz , Turn-off time Toff 5A/us,-100V -100V 20V/us to 2000V 400 10 Commutating di/dt, (A/us) 100 us , time while a corresponding high di/dt rating depends on the choice of gating method. The factory , Commutating di/dt V V 2000 Peak Recovery Current, Irm, (A) 1000 Process Limit Itm = 100 kA ... Silicon Power
Original
datasheet

2 pages,
57.2 Kb

THYRISTOR di/dt 100A/uS SPT402B SPT402A oz 9981 SPT402 TEXT
datasheet frame
Abstract: chip If critical rate-of-rise of on-state current di/dt is 100A/us, for example, thyristor may fail when anode current reaches more than 100A at 1 us, 10 Thyristor turns on. Nihon Inter , =200mA and , diG/dt=0.2A/us, is specified as standard condition for di/dt for a thyristor that has maximum , gate ratings, is also valid to improve di/dt capability of thyristor itself. Critical rate of rise , is a typical cause of thyristor malfunctions. Thyristor chips which have dv/dt capability of 100V/us ... Nihon Inter Electronics
Original
datasheet

10 pages,
786.9 Kb

3-Phase Full-Wave Bridge Rectifier 3Phase diode thyristor short circuit thyristor inverter circuit diagram HIGH VOLTAGE THYRISTOR ic Thyristor firing circuit driver ic for thyristor fast thyristor 200A 200A thyristor gate control circuit thyristor firing circuit 6 thyristor driver circuit 600A thyristor scr pgh15016am snubber FOR 3PHASE BRIDGE RECTIFIER 3 phase thyristor dc drive 3phase thyristor firing circuit anode gate thyristor TEXT
datasheet frame

Archived Files

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Rated Tj=25 5 C MAX 0.05 mA Tj=125 5 C MAX 10 tq I T = 100A V R =75V V D =67%V DRM dI/dt=30A/ m s dV A 2 s dI/dt Critical rate of rise of on-state current Gate supply : I G = 800mA - di G /dt = 1A / m MAX 1.5 V V GD V D =V DRM R L =3.3k W Tj=125 5 C MIN 0.2 V tgt V D =V DRM I G = 500mA dI G /dt = 3A/ m ST | THYRISTOR MODULE MSS50-1200 MSS50-1200 MSS50-800 MSS50-800 MSS50 MSS50 THYRISTOR MODULE Document Number: 3035 Date Update: 01/07/95 Pages
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3035-v2.htm
STMicroelectronics 14/06/1999 6.51 Kb HTM 3035-v2.htm
Rated Tj=25 5 C MAX 0.05 mA Tj=125 5 C MAX 10 tq I T = 100A V R =75V V D =67%V DRM dI/dt=30A/ m s dV A 2 s dI/dt Critical rate of rise of on-state current Gate supply : I G = 800mA - di G /dt = 1A / m MAX 1.5 V V GD V D =V DRM R L =3.3k W Tj=125 5 C MIN 0.2 V tgt V D =V DRM I G = 500mA dI G /dt = 3A/ m ST | THYRISTOR MODULE MSS50-1200 MSS50-1200 MSS50-800 MSS50-800 MSS50 MSS50 THYRISTOR MODULE Document Number: 3035 Date Update: 01/07/95 Pages
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3035.htm
STMicroelectronics 02/04/1999 6.55 Kb HTM 3035.htm
Rated Tj=25 5 C MAX 0.05 mA Tj=125 5 C MAX 10 tq I T = 100A V R =75V V D =67%V DRM dI/dt=30A/ m s dV A 2 s dI/dt Critical rate of rise of on-state current Gate supply : I G = 800mA - di G /dt = 1A / m MAX 1.5 V V GD V D =V DRM R L =3.3k W Tj=125 5 C MIN 0.2 V tgt V D =V DRM I G = 500mA dI G /dt = 3A/ m ST | THYRISTOR MODULE Datasheet THYRISTOR MODULE MSS50-XXX MSS50-XXX Document Format Size Document Number Date
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3035-v1.htm
STMicroelectronics 20/10/2000 8.67 Kb HTM 3035-v1.htm
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