TGL4203-SM RO4003 - Datasheet Archive

 

DC - 30 GHz Wideband Analog Attenuator Key Features · · · · · · · ·

 

TGL4203-SM TGL4203-SM DC - 30 GHz Wideband Analog Attenuator Key Features · · · · · · · · · · Measured Performance Bias conditions: -1V to 0V Frequency Range: DC to 30 GHz 17 dB Variable Attenuation Range Insertion Loss: 1.5 dB Typical Input P1dB: >20 dBm Typical @ 10 dB Attenuation IM3: -40 dBc Typical @ Pin/Tone = 6dBm, Return Loss: 15 dB Typical Bias: -1V to 0 V Technology: 3MI 0.25 um mmw pHEMT Compact 3x3 QFN with 16 Leads Package Dimensions: 3 x 3 x 0.9 mm Primary Applications · · · Point-to-Point Radio Fiber Optic Wideband Military & Space Product Description The TriQuint TGL4203-SM TGL4203-SM is a wideband packaged Analog Attenuator. The TGL4203-SM TGL4203-SM operates from DC - 30 GHz and is designed using TriQuint's proven standard 0.25 um mmw pHEMT production process. The TGL4203-SM TGL4203-SM typically provides 1.5 dB Insertion Loss, 17 dB variable Attenuation Range, >20 dBm Input Power @ 1dB compression Gain, -40 dBc IM3 @ 6 dBm Pin/Tone, with bias voltages from -1V to 0V. The TGL4203-SM TGL4203-SM is available in a low-cost , compact surface mount 3x3 QFN style package with 16 leads. The wideband capabilities of this device are versatile in many applications such as Point to Point Radio, Fiber Optic, and Wideband Military & Space. Evaluation Boards are available upon request. Lead-free and RoHS compliant. Datasheet subject to change without notice. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2009 © Rev - A 1 TGL4203-SM TGL4203-SM Table I Absolute Maximum Ratings 1/ Symbol V1, V2 Parameter Value Attenuation Control Voltage Range -5 to +1 V I1 V1 Supply Current -1 to +8.8 mA I2 V2 Supply Current -3 to +80 mA Pin Input Continuous Wave Power Tchannel 1/ Notes 24 dBm Channel Temperature 200 °C These ratings represent the maximum operable values for this device. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. Table II Recommended Operating Conditions Bias Voltages Optimized for flatness of Attenuation with respect to reference over frequency 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2009 © Rev - A TGL4203-SM TGL4203-SM Table III RF Characterization Table Bias: -1 V to 0 V, (TA= 25 °C Nominal) SYMBOL TEST CONDITIONS NOMINAL UNITS Attenuation Range f = DC to 30 GHz 17 dB Insertion Loss f = DC to 30 GHz 2 dB Input Power @ 1dB Gain compression @ 10 dB Atten. f = DC to 30 GHz 20 dBm IM3 3rd Harmonic Intermodulation @ Pin/Tone = 6dBm f = DC to 30 GHz -40 dBc IRL Input Return Loss f = DC to 30 GHz 15 dB ORL Output Return Loss f = DC to 30 GHz 15 dB Group Delay Variation f = DC to 30 GHz +/-5 psec Max. Insertion Loss Ripple f = DC to 30 GHz 0.5 dB Insertion Loss Temperature Coefficient f = DC to 30 GHz -0.01 dB/°C IL IP1dB PARAMETER 3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2009 © Rev - A TGL4203-SM TGL4203-SM Table IV Power Dissipation and Thermal Properties Parameter Test Conditions Maximum Input Power Thermal Resistance, jc Mounting Temperature Pin = 250 mW Tchannel = 150 °C Tm = 1.0E+6 Hrs Pin = 100 mW Tbaseplate = 70 °C 30 seconds Notes 1/ 2/ jc = 42 (°C/W) Tchannel = 74.2 °C Tm = 2.4E+9 Hrs 260 °C Max Storage Temperature 1/ Value -65 to 150 °C For a median life of 1E+6 hours, Input Power is limited to Pin = (150 ºC ­ Tbase °C)/jc. 2/ Channel operating temperature will directly affect the device median time (Tm). For maximum life, it is recommended that channel temperatures be maintained at the lowest possible levels. Median Lifetime (Tm) vs. Channel Temperature 4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2009 © Rev - A TGL4203-SM TGL4203-SM Measured Data See Table II for Recommended Bias V1 & V2, (TA= 25 °C Nominal) 5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2009 © Rev - A Measured Data TGL4203-SM TGL4203-SM See Table II for Recommended Bias V1 & V2 , (TA= 25 °C Nominal) 6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2009 © Rev - A Measured Data TGL4203-SM TGL4203-SM See Table II for Recommended Bias V1 & V2 , (TA= 25 °C Nominal) 7 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2009 © Rev - A Measured Data TGL4203-SM TGL4203-SM See Table II for Recommended Bias V1 & V2 , (TA= 25 °C Nominal) Pin/Tone = 6dBm Frequency = 20 GHz 8 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2009 © Rev - A Measured Data TGL4203-SM TGL4203-SM See Table II for Recommended Bias V1 & V2 Data include connectors and TL losses 9 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2009 © Rev - A Measured Data TGL4203-SM TGL4203-SM See Table II for Recommended Bias V1 & V2 2dB Attenuation Data include connectors and TL losses 2dB Attenuation 10 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2009 © Rev - A TGL4203-SM TGL4203-SM Electrical Schematic TGL4203-SM TGL4203-SM RF In RF Out 1 nF 1 nF V1 V2 Bias Procedures Bias-up Procedure ·V1 & V2 set to 0V ·Adjust V1 & V2 more negative according to Table II ·Apply RF (max. input level +24dBm) Bias-down Procedure ·Turn off RF ·Set V1 & V2 to 0V 11 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2009 © Rev - A TGL4203-SM TGL4203-SM Mechanical Drawing Top View Side View Bottom View GND Dimensions are in millimeters Dot on topside indicates Pin 1 RF In & RF Out can be reversed Pin Description 1, 2, 4, 9, 11, 12 GND 3 RF In 5, 8, 13, 14, 15, 16 N/C 6 V1 7 V2 10 RF Out GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 12 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2009 © Rev - A TGL4203-SM TGL4203-SM Recommended Evaluation Board 1nF(size 0402) capacitors for DC decoupling Board material is 8 mil ROGERS RO4003 RO4003 V1 V2 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2009 © Rev - A 13 TGL4203-SM TGL4203-SM Assembly Notes Recommended Surface Mount Package Assembly · Proper ESD precautions must be followed while handling packages. · Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry. · TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven vendors' recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed in the table below. · Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement. The volume of solder paste depends on PCB and component layout and should be well controlled to ensure consistent mechanical and electrical performance. · Clean the assembly with alcohol. Typical Solder Reflow Profiles Reflow Profile SnPb Pb Free Ramp-up Rate 3 °C/sec 3 °C/sec Activation Time and Temperature 60 ­ 120 sec @ 140 ­ 160 °C 60 ­ 180 sec @ 150 ­ 200 °C Time above Melting Point 60 ­ 150 sec 60 ­ 150 sec Max Peak Temperature 240 °C 260 °C Time within 5 °C of Peak Temperature 10 ­ 20 sec 10 ­ 20 sec Ramp-down Rate 4 ­ 6 °C/sec 4 ­ 6 °C/sec Ordering Information Part Package Style TGL4203-SM TGL4203-SM 3X3 QFN GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 14 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2009 © Rev - A