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TGA1141 - Datasheet Archive
Feb 4, 2000 33-36 GHz 2W Power Amplifier TGA1141 Key Features · 0.25 um pHEMT Technology · 17 dB Nominal Gain
Advance Product Information Feb 4, 2000 33-36 GHz 2W Power Amplifier TGA1141 TGA1141 Key Features · 0.25 um pHEMT Technology · 17 dB Nominal Gain · 31 dBm Pout @ P1dB, · Psat 33dBm @ 6V , 34dBm @7V · Bias 6 - 7V @ 1.5A Primary Applications · Military Radar Systems · Ka Band Sat-Com · Point-to-Point Radio Chip Dimensions 4.13 mm x 3.3 mm ( ) Wafer Lot 9918802-1, -2, -3, +6V, ~ 880mA 22 Small-signal Gain (dB) 20 18 Performance Summary Table 16 Description 14 Frequency range Small signal gain Performance Evaluation Fixtured with Flare TFNs 33 to 36 GHz Output power > 17 dB nom, 34 - 35.2 GHz > 17 dB nom, 33 - 36 GHz ~ 5 dB nom, 34 - 35.2 GHz ~ 5 dB nom. 33 36 GHz > 8 dB nom, 34 - 35.2 GHz > 7 dB nom, 33 - 36 GHz 32.3dBm min. 34 35.2 GHz 33 PAE 31.5dBm min, 34 35.2 GHz over temp. > 20% +25C 32 Operating temperature range 12 Input return loss 10 30 32 34 36 38 40 Frequency (GHz) Output return loss 35 Pout (dBm) 34 31 Ids 30 29 Vds P1dB_ave 28 Psat_ave Die size 27 26 Tested under 26, +25, & +100C Predict: -43C < 1.5 A max over operating frequency and Temp. range +6V 4.134 mm x 3.300 mm 2 13.6mm 25 32 33 34 35 Frequency (GHz) 36 37 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information Feb 4, 2000 TGA1141 TGA1141 Measured Average Small Signal Data ( ) Wafer Lot 9918802-1, -2, -3, +6V, ~ 880mA 22 Small-signal Gain (dB) 20 S21 18 16 14 12 10 30 32 34 36 38 40 Frequency (GHz) ( ) Wafer Lot 9918802-1, -2, -3, +6V, ~ 880mA 0 S11,S22 Input & Output Return Loss (dB) -2 -4 -6 S11 S22 -8 -10 -12 -14 30 32 34 36 38 40 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 2 Advance Product Information Feb 4, 2000 TGA1141 TGA1141 Measured Power Data 35 34 Pout 33 Pout (dBm) 32 31 30 29 P1dB_ave 28 Psat_ave 27 26 25 32 33 ( 34 35 Frequency (GHz) ) 36 37 30 28 PAE 26 PAE (%) 24 22 20 18 16 14 PAE@P1dB 12 PAE@Psat 10 32 33 34 35 36 37 Frequency (GHz) 35 34.5 34 Psat vs Vd Pout (dBm) 33.5 33 +6V 32.5 +7V 32 31.5 31 30.5 30 32 33 34 35 36 37 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 3 Advance Product Information Feb 4, 2000 TGA1141 TGA1141 ( ) Pout, Gain vs. Pin at -26C, +25C and +100C w9918802-1 Dev 2505: 34.0GHz +6V 20 19 31 18 29 17 27 16 25 15 23 14 21 13 19 12 17 11 15 10 0 5 10 15 20 P +25C out P +100C out Gain (dB) 33 Pout (dBm) 35 P -26C out G +25C ain G +100C ain G -26C ain 25 m) Pin (dB Pout vs. Temperature Data Summary Matrix: T= -26C T= +25C T= +100C Freq (GHz) min Pout mean Pout min Pout mean Pout min Pout mean Pout 34 33 33 32.7 32.8 31.9 32 34.6 32.8 32.9 32.5 32.6 31.7 31.8 35.2 32.5 32.7 32.3 32.4 31.5 31.6 Ave. Pout (dBm) 32.8 32.9 32.5 32.6 31.7 31.8 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4 Advance Product Information Feb 4, 2000 TGA1141 TGA1141 Chip Assembly and Bonding Diagram GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 5 Advance Product Information Feb 4, 2000 Assembly Process Notes Reflow process assembly notes: ·= ·= ·= ·= ·= AuSn (80/20) solder with limited exposure to temperatures at or above 300C alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere Component placement and adhesive attachment assembly notes: ·= ·= ·= ·= ·= ·= ·= vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical Interconnect process assembly notes: ·= ·= ·= ·= ·= thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200C GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 6