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Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612DP Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

TFK 03 Diode

Catalog Datasheet MFG & Type PDF Document Tags

diode B14A

Abstract: B14A diode 00CHb51 1 TFK 3070 D ] NPN Silicon Darlington Power Transistor Applications: â'¢ Motor-control (380 , '¢ Short switching times â'¢ Very fast C-E-free-wheel diode Case variations Preliminary specifications â'¢ Base 1 and base 2 connectable â'¢ Triple diffusion technique â'¢ Glass passivation TFK 3070 D Terminal connections TFK 3070 DA T1,2/1451.0888 E 2788 C-li 267 TELEFUNKEN ELECTRONIC TFK 3070 D 17E , XL TFK 3070D 1 c am 1 »»Ml j ' UJ 1 1 1 -1- *. i â  â'¢ 4». L-. , îm | 1 1
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diode B14A B14A diode TFK 03 Diode TFK3070D B14A TFK 001 T-33S5- T0126 15A3DIN

SMD Codes

Abstract: TRANSISTOR SMD T1P coloured letter (usually on extremely small diode packages). Colour, if significant, is shown in small type , from the type of device. For example, a voltage specified for a rectifier diode is usually the maximum PIV (peak inverse voltage) of the diode, but for a zener diode the operating (zener voltage) will be , output p-channel fet (any type) pin diode package pnp bipolar transistor protection, protected (as in , ) Toko Inc. Zetex Agi Fch HP Inf ITT MC Mot Nat Nec NJRC ON Phi Roh SGS Sie Sil Tem Tfk Tok Zet
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SMD Codes TRANSISTOR SMD T1P BAW92 MMBD2104 schottky diode s6 81A smd transistor A6a BC846A FMMT3904 BZV49 BZV55 BAS32 BAS45

MMBD2103

Abstract: ZENER DIODE t2d coloured letter (usually on extremely small diode packages). Colour, if significant, is shown in small type , from the type of device. For example, a voltage specified for a rectifier diode is usually the maximum PIV (peak inverse voltage) of the diode, but for a zener diode the operating (zener voltage) will be , output p-channel fet (any type) pin diode package pnp bipolar transistor protection, protected (as in , Phi Roh SGS Sie Sil Tem Tfk Tok Zet Agilent (was HP) Fairchild Hewlett-Packard (Now Agilent
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MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAV105 LL4148 LL4448 BB241 BB249 LL914

MMBD2104

Abstract: Transistor NEC 05F have a single coloured letter (usually on extremely small diode packages). Colour, if significant, is , for a rectifier diode is usually the maximum PIV (peak inverse voltage) of the diode, but for a zener diode the operating (zener voltage) will be given. Normally, where a voltage, current or power is , pinouts, abbreviations, diode colour codes, resistor and capacitor codes are also available from the main , well Code 0 005 p01 t01 01 010 011 02 02 02 02 p02 t02 03 04 04 -04 t04 05 05F 06 -06 t06 020 050 081
SMD Code Book
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hp2835 diode what is the equivalent of ZTX 458 transistor T2D DIODE 3w NDS358N mmbf4932 2n2222 as equivalent for bfr96 LL4150 BB219 LL300 BA682 BA683 BA423L

smd code book

Abstract: transistor SMD P1f DG-DL DM-DS DT-DZ Other Info Codebook Introduction Abbreviations HP diode coding SOD-80 (Melf , 02 02 02 02 02 p02 t02 03 03 03 03 04 04 04 04 04 04 -04 t04 2SC3603 SSTPAD5 PDTA143ET PDTA143ET Gali , SOT173 Npn RF fT 7GHz PAD-5 5pA leakage diode pnp dtr 4k7+4k7 pnp dtr 4k7+4k7 DC-8GHz MMIC amp 12dB gain PAD-10 10pA leakage diode 2N2369 n-ch mosfet 80V 175mA npn RF MRF571 zener 200mW 2.0V 50V 100mA npn sw , 100mA 2N3906 2N3906 n-ch jfet J108 n-ch jfet J109 PAD-20 20pA leakage diode PAD-50 50pA leakage diode
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smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s SSTPAD10 SO2369R BST82 MRF5711L DTCC114T PDTC143ET

TFK 03 Diode

Abstract: TLHR0400 ·e e o «*M tK N tfK C iK l'iO H Weight max. 0.4 g T1.2/1062.0389 E 2052 6- 03 49 , Reverse voltage per diode Forward current per diode Forward surge current per diode «,¡Slops Power dissipation single diode ^ b^ 55«C. Total power dissipation T « *S 6 5 -C Junction temperature Storage , single diode Junction ambient total Optical and electrical characteristics per diode, 7",mb*=25°C
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R0400 TLHR0400 tfk 635 tfk 605 IAL66 Y0400 0006RM2 000BT44

TFK 03 Diode

Abstract: diode s .* tfk T A rv -W U S K tf-K Axial Diode P - K U type Super Fast Recovery Diode O U T L IN E D IM E N S IO N S S3L20U 2 0 0 V 3A R A TIN G S Absolute Maximum Ratings * Item a IE # Symbol 'F ,.;T C onditions -_ T yp e No. S3L20U -4 0 -1 5 0 150 , type Super Fast Recovery Diode S3L20U ïfë fè H C H A R A C T E R IS T IC D IA G R A M S S * » * « , = lM H z ;= 2 5 " c ) -0 - 1 1 03 ~0 2 NX. \ s, S: N \ R=Vr 100 U 50 a
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diode s .* tfk diode tfk s S3L20 DIODE s3l20u

TFK diodes BYW 76

Abstract: tfk U 264 /D BYT 54/G BYT 54/J BYT 54/K BYT 54/M 15 15 15 15 15 15 15 BZW 03/D 7V5 - D 270 , 15 15 15 16 16 16 16 16 15 15 15 15 15 16 16 16 16 16 BZT 03/D 9V1 - D 270 , 1 3005 TE 13006 TE 13007 TE 13008 TE 13009 21 21 21 21 21 21 21 21 TFK 3 0 7 0 D T , quality level Base Cathode Collector Diode capacitance Feedback capacitance, common base , current Drain current Em itter current Em itter cut-off current of the diode em itter â'" base 2
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TFK diodes BYW 76 tfk U 264 TFK diodes 148 tfk 804 byw 56 equivalent BYW 90 BYF51 BYT53C

JX5417

Abstract: diode tfk s 220 .4 3.4 - j5.0 2.3-J5.2 ;n p u t nl l v lK k 7L U f t U ,< L LJU 'P U ' NL ' V J tfK S , ) 618-8883 Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 Europe: M/A-COM, Inc. Tel. + 4 4 , DIODE JX5417 7 TURNS OF NO. 18 AWG ON .150" DIA 11 TURNS OF NO. 18 AWG ON .150" DIA 11 TURNS OF NO. 18 , : Tel. (800) 366-2266 Fax (800) 618-8883 Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451
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PH0810-150 diode tfk s 220 transistor b 595 TFK 03 AF100

TFK BP

Abstract: TFK 4 receiver t u i e . A S c h o tfk y d io d e m ix e r is assem b ]e d in a n a tta c h e d w a v e g u id e se , (Ambient)3 IF Frequency Bandwidth Minimum Detectable Return Signal Recommended DC Return (Mixer Diode) W , America: Tel. (800) 366-2266 Fax (800) 618-8883 Asia/Pacific: Tel. + 81(03)3226-1671 Fax +81 (03
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MA87849 TFK BP TFK 4 receiver Gunn Transceiver 595/U WR-42 UG-595/U

TFK 201

Abstract: 3 tfk 206 infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using , D Low coupling capacitance of typical 0.3 pF D Wide ambient temperature range D Underwriters , 1012 VCEsat Unit kV 0.3 V fC 100 kHz Ck 0.3 pF Current Transfer Ratio , Typ. 3.0 3.0 4.7 0.3 6.0 5.0 Unit ms ms ms ms ms ms 96 11698 IF IF 0 +5V , Telefunken 0.9 0.8 CTR=50% 0.7 0.6 20% 0.5 0.4 0.3 0.2 10% 0.1 0 1 10 100
Vishay Intertechnology
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MCT62H TFK 201 3 tfk 206 tfk Phototransistor tfk order DIN 50014 STANDARD E-76222

h11q

Abstract: TFK 19 018 ® Including Free Wheeling Diode â'¢ hFE#*f High DC Current Gain â'¢ H&mm Insulated Type MFUM Applications , (j-c) Transistor 0.18 °C/W & ® ÃA Rth(j-c] Diode 0.6 â'¢c/w & fé tt Rth(c-l) With Thermal Compound 0.05 °c/w B-107 2DI15OD-O5O(150A) l^üü^ : Characteristics 20 10 0.05 0.1 0.3 0.5 1.0 I. (A] 3.0 5.0 in m E ViE(s»t| M 0.5 0.3 0.1 280 240 £ 200 ? B 3 '60 ' lc [A) 120 80 40 0 , ) 0.5 0.3 T j 25°C tstg 7j=2 5Â
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2DI150D-050 h11q TFK 19 018 tfk K tfk t 39 TFK 450 E82988

TFK u 269

Abstract: 2SK1917-MR vsource on-state resistance RdS(oii) Id = 5A I VGS = 10V 0.3 0.4 n Forward transconductance grs Id = 5A , / / t / 5 10 VGS(V) Rds(on) [03 4.5V 5.0V 5.5V 6.0V 6.5V 7.0V 7.5V 8.0V , °c 0 0.5 1.0 1.5 VS0(V] Forward Characteristics of Reverse Diode ao 60 40 PD (w) 20 50 , > - l. fôtt, t-9. tm. t tiiîfiiuom&t'£ % W è h 5 i t tfk*) £ -to - « i] ? u y l : leas è hr o , Tt'^) O (03) 5388-7651 « (03) 5388-7657 à (03) 5388-7681 ma^mvt fi (03) 5388-7680 »SM fi (0263
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2SK1917-MR TFK u 269 T151 TFK diode tfk 731 3 TFK 140 SC-67 A2-271

NI3T

Abstract: te tfk toff (tdlofD+ tf) Diode foward on-voltage Reverse recovery time Thermal Characteristics Items Thermal , 2SK 1020 Rosim )=f(Toh>, .[ d=15A .V os=10V. 0.5 I I I TT I I I I I I i . 0.4 VE 0.3 , ,[V) Forward Characteristics of Reverse Diode TcCC) Allowable Power Dissipation vs. Tc R ih , , «S&^aaSMstfcoJ:?!:, · « të tfK iS (# * 8 , # Ú )H * ¿ :) / < - , 9 7 - y - f · >* x A 4 fc , * ïE ê f l: T 151 O Í «IIi> Æ SE 1 t^ ^ l2 ST @ 3 0 # 3 ^ - ilfrîSa t ? f Ju) :03) 5388-7651 H
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NI3T te tfk TFK U 111 B a1ae 2SK1020 equivalent A211-1 2SK1020 A2-109

TFK 450

Abstract: TSML3710-GS08 TSML3710 VISHAY Vishay Semiconductors GaAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC2 SMD , Resistance Junction/Ambient Document Number 81075 Rev. 3, 06-Jun-03 t 10sec °C - 40 to + 85 , Document Number 81075 Rev. 3, 06-Jun-03 TSML3710 VISHAY Vishay Semiconductors I F - Forward , Rev. 3, 06-Jun-03 0.0 ­10 0 10 20 30 40 50 60 70 80 90 100 16849 Tamb ­ Ambient Temperature
Vishay Semiconductors
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TEMT3700 TSML3710-GS08 diode 178 tfk IR diodes TFK 4 tfk 540 TFK diodes 88/540/EEC 91/690/EEC D-74025
Abstract: infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a , CTR D Low coupling capacitance of typical 0.3 pF D Wide ambient temperature range D Underwriters , V, 40% relative humidity IF = 10 mA, IC = 1 mA Symbol VIO1) RIO 1) VCEsat fC Ck 100 0.3 Min. 5 Typ. 1012 0.3 Max. Unit kV W V IF = 10 mA, VCE = 5 V, RL = 100 Coupling capacitance f = 1 MHz 1 , Symbol td tr tf ts ton toff Typ. 3.0 3.0 4.7 0.3 6.0 5.0 Unit s s s s s s m m m m m m 96 Vishay Intertechnology
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CNY74-4H

Abstract: 23 tfk 101 gallium arsenide infrared-emitting diode in an 8-lead, resp. 16-lead plastic dual inline package. The , capacitance of typical 0.3 pF â'¢ Current Transfer Ratio (CTR) of typical 100% â'¢ Low temperature , saturation voltage lF = 10 mA, lc = 1 mA VCEsat 0.3 V Cut-off frequency Vce = 5V, lF = 10 mA, RL = 100 Q fc 100 kHz Coupling capacitance f = 1 MHz ck 0.3 PF 1) Related to standard climate 23/50 DIN , tr 3.0 |iS Fall time tf 4.7 US Storage time ts 0.3 \IS Turn-on time ton 6.0 ys Turn-off time
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CNY74-4H CNY74-2H 23 tfk 101 CNY74-4 marking code 4h diode DIN 50014 TFK 19 001 CNY74-2H/

23 TFK 001

Abstract: infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a , CTR D Low coupling capacitance of typical 0.3 pF D Wide ambient temperature range D Underwriters , V, 40% relative humidity IF = 10 mA, IC = 1 mA Symbol VIO1) RIO 1) VCEsat fC Ck 100 0.3 Min. 5 Typ. 1012 0.3 Max. Unit kV W V IF = 10 mA, VCE = 5 V, RL = 100 Coupling capacitance f = 1 MHz 1 , Symbol td tr tf ts ton toff Typ. 3.0 3.0 4.7 0.3 6.0 5.0 Unit s s s s s s m m m m m m 96
Vishay Intertechnology
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23 TFK 001
Abstract: infrared-emitting diode in an 8-lead, resp. 16-lead plastic dual inline package. The elements are mounted on one , voltage VIO = 5 kV D Test class 25/100/21 DIN 40 045 D Low coupling capacitance of typical 0.3 pF D , Unit kV 0.3 V fc 100 kHz Ck 0.3 pF Current Transfer Ratio (CTR) Parameter , VS = 5 V, IF = 10 mA, RL = 1 kW ( (see figure 2) g ) Typ. 3.0 3.0 4.7 0.3 6.0 5.0 9.0 , ) 820 U TFK 63 15091 Pin 1 Indication Coupling System Indicator Company Logo Vishay Intertechnology
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CNY74
Abstract: infrared-emitting diode in an 8-lead, resp. 16-lead plastic dual inline package. The elements are mounted on one , VIO = 5 kV D Test class 25/100/21 DIN 40 045 D Low coupling capacitance of typical 0.3 pF D Current , ) VCEsat fc Ck 100 0.3 Min. 5 Typ. 1012 0.3 Max. Unit kV W V VCE = 5 V, IF = 10 mA, RL = 100 , toff ton toff Typ. 3.0 3.0 4.7 0.3 6.0 5.0 9.0 18.0 Unit s s s s s s s s m m m m m m m m 0 , U TFK 63 15091 Pin 1 Indication Coupling System Indicator Company Logo Production Vishay Intertechnology
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