TF521M TF541M TF561M - Datasheet Archive

 

TF521M, TF541M, TF561M s Features External Dimensions (Unit: mm) 12.0 min qGate trigger current: IGT=15mA max 2.1max

 

TO-220 5A Thyristor TF521M TF521M, TF541M TF541M, TF561M TF561M s Features External Dimensions (Unit: mm) 12.0 min qGate trigger current: IGT=15mA max 2.1max 3.75±0.1 a b ± 1.35 0.15 4.0 max qAverage on-state current: IT(AV)=5A 5.0max 10.4max 16.7max 0.2 3.0±0.2 8.8± qRepetitive peak off-state voltage: VDRM=200, 400, 600V +0.2 0.65 ­ 0.1 ± 2.5 0.1 ±0.2 1.7 ± 2.5 0.1 (1). Cathode (K) (2). Anode (A) (3). Gate (G) (1) (2) (3) a. Part Number b. Lot Number Weight: Approx. 2.6g sAbsolute Maximum Ratings Parameter Symbol Repetitive peak off-state voltage Ratings Unit TF521M TF521M TF541M TF541M TF561M TF561M VDRM 200 400 600 V Repetitive peak reverse voltage VRRM 200 400 600 V Non-repetitive peak off-state voltage VDSM 300 500 700 V Non-repetitive peak reverse voltage VRSM 300 500 700 Average on-state current IT(AV) 5.0 A IT(RMS) 7.8 Conditions A RMS on-state current Tj= ­40 to +125°C, RGK =1k V Surge on-state current ITSM 80 A Peak forward gate current IFGM 2.0 A Peak forward gate voltage VFGM 10 V Peak reverse gate voltage VRGM 5.0 Peak gate power loss PGM 5.0 PG (AV) 0.5 W Junction temperature Tj ­ 40 to +125 °C Storage temperature Tstg ­ 40 to +125 50Hz Half-cycle sinewave, Continuous current, Tc=96°C °C Average gate power loss 50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C f 50Hz, duty V f 50Hz W f 50Hz, duty 10% 10% sElectrical Characteristics Parameter Symbol Ratings min typ max Unit Off-state current IDRM 2.0 mA Reverse current IRRM 2.0 mA On-state voltage VTM 1.4 V Gate trigger voltage VGT Gate trigger current IGT Gate non-trigger voltage VGD Holding current Critical rate-of-rise of off-state voltage Turn-off time Thermal resistance 10 1.5 3.0 V 15 mA V 0.1 IH 4.0 mA dv/dt 50 V/µS tq 30 Rth µS 3.0 °C/W Conditions Tj=125°C, VD=VDRM(VRRM), RGK=1k TC=25°C, ITM=10A VD=6V, RL=10, TC=25°C VD=1/2×VDRM, Tj=125°C, RGK=1k RGK=1k, Tj=25°C VD=1/2 × VDRM, Tj=125°C, RGK=1k, CGK=0.033µF Tc=25°C Junction to case TF521M TF521M, TF541M TF541M, TF561M TF561M ITSM Ratings 1 60 40 20 8 6 1 0 0 10 Tj = ­40°C 2 Tj = ­20°C vGF (V) 1 cycle Gate voltage 5 80 = 5W Tj = 25°C 10 10 10 ms P GM iT (A) Tj =125°C 12 Initial junction temperature Tj=125°C ITSM Surge on-state current ITSM (A) 50 On-state current Gate Characteristics 100 Tj =25°C 100 Gate trigger voltage VGT (V) vT ­ iT Characteristics (max) 20 30 Gate trigger current IGT (mA) 4 2 See graph at the upper right 0.5 0 3.0 4.0 3 2 3 0° DC 180° 150° 50 2 4 6 0 8 0 IH temperature Characteristics (Typical) 0.1 10 3 10 4 50% tw TC =­ 40°C ­20°C 25°C 75°C 125°C 10 1 10 2 10 Pulse width 10 3 t w (µs) IGT temperature Characteristics (Typical) 0.4 0.2 0 ­40 0 25 50 75 100 Junction temperature Tj (°C) 125 50 75 100 125 10 rth (°C/W) 10 8 6 4 2 0 ­40 25 Transient thermal resistance Characteristics (Junction to case) Transient thermal resistance Gate trigger current IGT (mA) 0.6 (VD=6V, RL=10) 12 0 Junction temperature Tj (°C) (Typical) 0.8 10 0 ­40 10 4 VGT temperature Characteristics 1.0 20 0.1 0.05 0.5 1 t w (µs) (VD=6V, RL=10) (RGK=1k) 30 igt ) igt (Gate trigger current ) at Ta and tw 1 Pulse width 8 ( ( TC =­ 40°C ­20°C 25°C 75°C 125°C trigger IGT DC gateat 25°C current ) tw 10 10 2 6 30 50% 10 4 Pulse trigger temperature Characteristics igt (Typical) vgt 0.05 0.5 1 2 Average on-state current IT(AV) (A) Holding current IH (mA) 0 30 trigger VGT DC gateat 25°C voltage 2 iGF (A) 25 Pulse trigger temperature Characteristics vgt (Typical) vgt ( Gate trigger voltage) at Ta and tw 90° 75 Average on-state current IT(AV) (A) Gate trigger voltage VGT (V) 1 100 1 0 0 Gate current 180° 120° 4 125 Case temperature TC (°C) 30 ° 5 0 100 50Hz Half-cycle sinewave : Conduction angle DC 0° 0° 15 18 0° 60 ° 90 ° 0° 180° 6 50 150 12 7 10 IT(AV) ­ Tc Ratings = Average on-state power PT(AV) (W) 50Hz Half-cycle sinewave : Conduction angle 5 Number of cycle IT(AV) ­ PT(AV) Characteristics 8 1 vT ( V ) 60° 2.0 On-state voltage =30° 0.3 1.0 0 25 50 75 100 Junction temperature Tj (°C) 125 1 0.1 1 10 10 2 10 3 10 4 t, Time (ms) 11