TEFT4300 TSUS4300 TSAL4400 2002/95/EC 2002/96/EC

Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES · Package type: leaded · Package form:

TEFT4300 TEFT4300 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES · Package type: leaded · Package form: T-1 · Dimensions (in mm): Ø 3 · High radiant sensitivity · Daylight blocking filter matched with 940 nm emitters · Fast response times · Angle of half sensitivity: = ± 30° 94 8636-2 · Package matched with IR emitter series TSUS4300 TSUS4300 and TSAL4400 TSAL4400 DESCRIPTION · Lead (Pb)-free component in accordance RoHS 2002/95/EC 2002/95/EC and WEEE 2002/96/EC 2002/96/EC TEFT4300 TEFT4300 is a silicon NPN phototransistor with high radiant sensitivity in black, T-1 plastic package with daylight blocking filter. Filter bandwitdth is matched with 900 nm to 950 nm IR emitters. with APPLICATIONS · Optical switches · Counters and sorters · Interrupters · Encoders · Position sensors PRODUCT SUMMARY Ica (mA) (deg) 0.5 (nm) 3.2 ± 30 875 to 1000 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 COMPONENT TEFT4300 TEFT4300 Note Test condition see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE TEFT4300 TEFT4300 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Collector emitter voltage TEST CONDITION VCEO 70 V Emitter collector voltage VECO 5 V mA Collector current UNIT IC ICM 100 mA Tamb 55 °C Power dissipation 50 tp/T = 0.5, tp 10 ms Collector peak current PV 100 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C t 3 s, 2 mm from case Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 450 K/W Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified Document Number: 81549 Rev. 1.5, 16-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 423 TEFT4300 TEFT4300 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant PV - Power Dissipation (mW) 125 100 75 RthJA = 450 K/W 50 25 0 0 94 8308 20 40 60 100 80 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. IC = 1 mA V(BR)CEO 70 Collector emitter dark current VCE = 20 V, E = 0 Collector emitter capacitance VCE = 5 V, f = 1 MHz, E = 0 Collector emitter breakdown voltage Ee = 1 Collector light current = 950 nm, VCE = 5 V mW/cm2, TYP. MAX. UNIT ICEO 1 200 nA CCEO 3 pF 3.2 mA V 0.8 Ica Angle of half sensitivity ± 30 deg Wavelength of peak sensitivity p 925 nm 0.5 875 to 1000 nm Range of spectral bandwidth Ee = 1 mW/cm2, = 950 nm, IC = 0.1 mA Collector emitter saturation voltage VCEsat 0.3 V Turn-on time VS = 5 V, IC = 5 mA, RL = 100 ton 2.0 Turn-off time VS = 5 V, IC = 5 mA, RL = 100 toff 2.3 µs Cut-off frequency VS = 5 V, IC = 5 mA, RL = 100 fc 180 kHz µs Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 2.0 Ica rel - Relative Collector Current ICEO - Collector Dark Current (nA) 104 103 VCE = 20 V 102 101 10 20 94 8304 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Collector Dark Current vs. Ambient Temperature www.vishay.com 424 1.8 VCE = 5 V Ee = 1 mW/cm2 = 950 nm 1.6 1.4 1.2 1.0 0.8 0.6 94 8239 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 3 - Relative Collector Current vs. Ambient Temperature For technical questions, contact: detectortechsupport@vishay.com Document Number: 81549 Rev. 1.5, 16-Sep-08 TEFT4300 TEFT4300 Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors 8 ton/toff - Turn-on/Turn-off Time (µs) Ica- Collector Light Current (mA) 10 1 V CE = 5 V = 950 nm 0.1 0.01 0.01 toff 2 ton 10 1 Ee - Irradiance(mW/cm 2) 94 8302 4 0 0.1 VCE = 5 V RL = 100 = 950 nm 6 0 2 Fig. 4 - Collector Light Current vs. Irradiance 4 6 8 10 12 14 IC - Collector Current (mA) 94 8293 Fig. 7 - Turn-on/Turn-off Time vs. Collector Current S()rel - Relative Spectral Sensitivity = 950 nm Ee = 1 mW/cm 2 0.5 mW/cm 2 1 0.2 mW/cm 2 0.1 mW/cm 2 0.05 mW/cm 2 0.1 0.1 1 10 0.6 0.4 0.2 0 800 900 Fig. 8 - Relative Spectral Sensitivity vs. Wavelength 0° 10 10° 20° Srel - Relative Radiant Sensitivity 30° f = 1 MHz 8 6 4 2 0 0.1 94 8294 1100 1000 - Wavelenght (nm) 94 8306 Fig. 5 - Collector Light Current vs. Collector Emitter Voltage CCEO - Collector Emitter Capacitance (pF) 0.8 100 V CE - Collector Ermitter Voltage (V) 94 8305 1.0 1 10 0.9 50° 0.8 60° Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage 70° 0.7 100 VCE - Collector Emitter Voltage (V) Document Number: 81549 Rev. 1.5, 16-Sep-08 40° 1.0 - Angular Displacement Ica - Collector Light Current (mA) 10 80° 0.6 0.4 0.2 0 94 8303 Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 425 TEFT4300 TEFT4300 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant PACKAGE DIMENSIONS in millimeters 3.2 C 3.9 ± 0.15 E ± 0.1 3 ± 0.1 ± 0.3 Area not plane ± 0.15 0.4 + 0.15 - 0.05 1.5 0.6 ± 0.25 5.8 30.3 ± 0.5 < 0.6 (2.5) 3.5 4.5 ± 0.3 ± 0.1 Chip position 2.54 nom. technical drawings according to DIN specifications Drawing-No.: 6.544-5269.01-4 Issue: 4; 01.12.99 96 12172 www.vishay.com 426 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81549 Rev. 1.5, 16-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1