TCET1110/TCET1110G UL94-VO 0303/IEC 2002/95/EC 2002/96/EC UL1577 E76222 VDE0884

Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C Rated Features · CTR offered in 9

TCET1110/TCET1110G TCET1110/TCET1110G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C Rated Features · CTR offered in 9 Groups · Isolation materials according to UL94-VO UL94-VO · Pollution degree 2 e3 (DIN/VDE 0110 / resp. IEC 60664) · Climatic classification 55/100/21 (IEC 60068 part 1) · Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection · Low temperature coefficient of CTR · Temperature range - 40 to + 110 °C · Rated impulse voltage (transient overvoltage) VIOTM = 8 kVpeak · Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV · Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 Vpeak) · Rated recurring peak voltage (repetitive) VIORM = 600 VRMS · Creepage current resistance according to VDE 0303/IEC 0303/IEC 60112 Comparative Tracking Index: CTI 175 · Thickness through insulation 0.75 mm · Internal creepage distance > 4 mm · External creepage distance > 8 mm · Lead-(Pb)-free component · Component in accordance to RoHS 2002/95/EC 2002/95/EC and WEEE 2002/96/EC 2002/96/EC Agency Approvals · UL1577 UL1577, File No. E76222 E76222 System Code U, Double Protection · BSI: EN 60065:2002, EN 60950:2000 Certificate No. 7081 and 7402 · DIN EN 60747-5-2 (VDE0884 VDE0884) DIN EN 60747-5-5 pending · FIMKO Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): · For appl. class I - IV at mains voltage 300 V Document Number 83546 Rev. 1.7, 05-Sep-06 C E 17918_1 1 A C C V D E · For appl. class I - III at mains voltage 600 V according to DIN EN 60747-5-2(VDE0884 VDE0884)/ DIN EN 607475-5 pending, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface, with operating temperature up to 110°C Description The TCET1110/ TCET1110/ TCET1110G TCET1110G consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-pin plastic dual inline package. The elements are mounted on one leadframe, providing a fixed distance between input and output for highest safety requirements. VDE Standards These couplers perform safety functions according to the following equipment standards: DIN EN 60747-5-2(VDE0884 VDE0884)/ DIN EN 60747-5-5 pending / IEC 60747:2003 Optocoupler for electrical safety requirements IEC 60950 Office machines (applied for reinforced isolation for mains voltage < 400 VRMS) VDE 0804 Telecommunication apparatus and data processing IEC 60065 Safety for mains-operated electronic and related household apparatus www.vishay.com 1 TCET1110/TCET1110G TCET1110/TCET1110G Vishay Semiconductors Order Information Part Remarks TCET1110 TCET1110 CTR 50 - 600 %, DIP-4 TCET1111 TCET1111 CTR 40 - 80 %, DIP-4 TCET1112 TCET1112 CTR 63 - 125 %, DIP-4 TCET1113 TCET1113 CTR 100 - 200 %, DIP-4 TCET1114 TCET1114 CTR 160 - 320 %, DIP-4 TCET1115 TCET1115 CTR 50 - 150 %, DIP-4 TCET1116 TCET1116 CTR 100 - 300 %, DIP-4 TCET1117 TCET1117 CTR 80 - 160 %, DIP-4 TCET1118 TCET1118 CTR 130 - 260 %, DIP-4 TCET1119 TCET1119 CTR 200 - 400 %, DIP-4 TCET1110G TCET1110G CTR 50 - 600 %, DIP-4 TCET1111G TCET1111G CTR 40 - 80 %, DIP-4 TCET1112G TCET1112G CTR 63 - 125 %, DIP-4 TCET1113G TCET1113G CTR 100 - 200 %, DIP-4 TCET1114G TCET1114G CTR 160 - 320 %, DIP-4 TCET1115G TCET1115G CTR 50 - 150 %, DIP-4 TCET1116G TCET1116G CTR 100 - 300 %, DIP-4 TCET1117G TCET1117G CTR 80 - 160 %, DIP-4 TCET1118G TCET1118G CTR 130 - 260 %, DIP-4 TCET1119G TCET1119G CTR 200 - 400 %, DIP-4 4 Pin = Single Channel G = Lead form 10.16 mm; G is not marked on the body Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Reverse voltage Parameter VR 6 V Forward current IF 60 mA IFSM 1.5 A Unit Forward surge current Test condition tp 10 µs Unit Output Symbol Value Collector emitter voltage Parameter Test condition VCEO 70 V Emitter collector voltage VECO 7 V IC 50 mA ICM 100 mA Symbol Value Unit VISO 5000 VRMS Tamb - 40 to + 110 °C Tstg - 55 to + 125 °C Tsld 260 °C Collector current Collector peak current tp/T = 0.5, tp 10 ms Coupler Parameter Isolation test voltage (RMS) Test condition t = 1 min Operating ambient temperature range Storage temperature range Soldering temperature www.vishay.com 2 2 mm from case t 10 s Document Number 83546 Rev. 1.7, 05-Sep-06 TCET1110/TCET1110G TCET1110/TCET1110G Vishay Semiconductors Thermal Characteristics The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal Characteristics of Optocouplers Application note. Symbol Value Unit LED Power dissipation Parameter at 25 °C Test condition Pdiss 100 mW Output Power dissipation at 25 °C Pdiss 150 mW Maximum LED junction temperature Tjmax 125 °C Maximum output die junction temperature Tjmax 125 °C Thermal resistance, Junction Emitter to Board EB 173 °C/W Thermal resistance, Junction Emitter to Case EC 149 °C/W Thermal resistance, Junction Detector to Board DB 111 °C/W Thermal resistance, Junction Detector to Case DC 127 °C/W Thermal resistance, Junction Emitter to Junction Detector ED 173 °C/W Thermal resistance, Board to Ambient* BA 197 °C/W Thermal resistance, Case to Ambient* CA 4041 °C/W * For 2 layer FR4 board (4" x 3" x 0.062) TA CA Package TC EC DC DE TJD TJE DB EB TB BA 19996 TA Document Number 83546 Rev. 1.7, 05-Sep-06 www.vishay.com 3 TCET1110/TCET1110G TCET1110/TCET1110G Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Typ. Max Unit Forward voltage Parameter IF = ± 50 mA Test condition Symbol VF Min 1.25 1.6 V Junction capacitance VR = 0 V, f = 1 MHz Cj 50 pF Output Parameter Symbol Min IC = 1 mA VCEO 70 Emitter collector voltage IE = 100 µA VECO 7 Collector-emitter cut-off current VCE = 20 V, If = 0, E = 0 ICEO Collector emitter voltage Test condition Typ. Max Unit V V 10 100 nA Typ. Max Unit 0.3 V Coupler Parameter Test condition Symbol Min Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 fc 110 kHz Coupling capacitance f = 1 MHz Ck 0.3 pF Current Transfer Ratio Parameter 13 30 % CTR 22 45 % CTR 34 70 % CTR 56 90 % TCET1110 TCET1110 TCET1110G TCET1110G CTR 50 600 % CTR 50 150 % CTR 100 300 % TCET1117 TCET1117 TCET1117G TCET1117G CTR 80 160 % TCET1118 TCET1118 TCET1118G TCET1118G CTR 130 260 % TCET1119 TCET1119 TCET1119G TCET1119G CTR 200 400 % TCET1111 TCET1111 TCET1111G TCET1111G CTR 40 80 % TCET1112 TCET1112 TCET1112G TCET1112G CTR 63 125 % TCET1113 TCET1113 TCET1113G TCET1113G CTR 100 200 % TCET1114 TCET1114 TCET1114G TCET1114G 4 CTR TCET1116 TCET1116 TCET1116G TCET1116G www.vishay.com Typ. TCET1115 TCET1115 TCET1115G TCET1115G VCE = 5 V, IF = 10 mA Min TCET1114 TCET1114 TCET1114G TCET1114G VCE = 5 V, IF = 5 mA Symbol TCET1113 TCET1113 TCET1113G TCET1113G VCE = 5 V, IF = 1 mA Part TCET1111 TCET1111 TCET1111G TCET1111G TCET1112 TCET1112 TCET1112G TCET1112G IC/IF Test condition Max Unit CTR 160 320 % Document Number 83546 Rev. 1.7, 05-Sep-06 TCET1110/TCET1110G TCET1110/TCET1110G Vishay Semiconductors Maximum Safety Ratings (according to DIN EN 60747-5-2(VDE0884 VDE0884)/ DIN EN 60747-5-5 pending) see figure 1 This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Input Parameter Test condition Symbol Min Typ. Max Unit 130 mA Max Unit 265 IF Forward current mW Output Parameter Test condition Symbol Min Typ. Pdiss Power dissipation Coupler Parameter Test condition Unit 8 kV Tsi Safety temperature Max VIOTM Rated impulse voltage Symbol Min Typ. 150 °C Max Unit Insulation Rated Parameters Parameter Test condition tTr = 60 s, ttest = 10 s Insulation resistance VIO = 500 V VIO = 500 V, Tamb = 100 °C VIO = 500 V, Tamb = 150 °C (construction test only) 1.6 kV VIOTM 8 kV Vpd Partial discharge test voltage Lot test (sample test), (see figure 2) Min 1.3 kV RIO 100 %, ttest = 1 s Symbol Vpd Partial discharge test voltage Routine test Typ. 1012 RIO 1011 RIO 109 VIOTM t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s Ptot - Total Power Dissipation (mW) 300 Phototransistor Psi (mW) 250 200 VPd VIOWM VIORM 150 100 IR-Diode Isi (mA) 50 0 t3 ttest t4 0 0 25 50 75 100 125 Tsi - Safety Temperature (°C) 94 9182 Figure 1. Derating diagram Document Number 83546 Rev. 1.7, 05-Sep-06 150 13930 t1 tTr = 60 s t2 tstres t Figure 2. Test pulse diagram for sample test according to DIN EN 60747-5-2(VDE0884 VDE0884)/ DIN EN 60747-; IEC60747 IEC60747 www.vishay.com 5 TCET1110/TCET1110G TCET1110/TCET1110G Vishay Semiconductors Switching Characteristics Test condition Symbol Delay time (see figure 3) Parameter VS = 5 V, IC = 2 mA, RL = 100 td Min Typ. 3.0 Max µs Rise time (see figure 3) VS = 5 V, IC = 2 mA, RL = 100 tr 3.0 µs Turn-on time (see figure 3) VS = 5 V, IC = 2 mA, RL = 100 ton 6.0 µs Storage time (see figure 3) VS = 5 V, IC = 2 mA, RL = 100 ts 0.3 µs Fall time (see figure 3) VS = 5 V, IC = 2 mA, RL = 100 tf 4.7 µs Turn-off time (see figure 3) VS = 5 V, IC = 2 mA, RL = 100 toff 5.0 µs Turn-on time see figure 4) VS = 5 V, IF = 10 mA, RL = 1 k ton 9.0 µs Turn-off time see figure 4) VS = 5 V, IF = 10 mA, RL = 1 k toff 10.0 µs IF IC = 2 mA; adjusted through input amplitude RG = 50 tp = 0.01 T tp = 50 µs Channel I Channel II 50 Oscilloscope RL = 1 M CL = 20 pF 100 Figure 3. Test circuit, non-saturated operation IF = 10 mA IF tp IC t 100 % 90 % 10 % 0 tp td tr ton (=td+ t r ) 95 10804 0 96 11698 0 +5V IF IF 0 Unit tr td ton ts pulse duration delay time rise time turn-on time ts tf toff (= ts + tf) t tf toff storage time fall time turn-off time Figure 5. Switching Times +5V IC RG = 50 tp = 0.01 T tp = 50 µs Channel I Channel II 50 1 k Oscilloscope RL 1 M C L 20 pF 95 10843 Figure 4. Test circuit, saturated operation www.vishay.com 6 Document Number 83546 Rev. 1.7, 05-Sep-06 TCET1110/TCET1110G TCET1110/TCET1110G Vishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified Ptot Total Power Dissipation (mW) 300 10000 Coupled Device I CEO - Collector Dark Current, with open Base (nA) 250 200 Phototransistor 150 IRDiode 100 50 10 1 0 20 40 60 80 100 0 120 Tamb - Ambient Temperature (°C) Figure 6. Total Power Dissipation vs. Ambient Temperature 40 60 80 100 120 Figure 9. Collector Dark Current vs. Ambient Temperature 100 VCE = 5 V I C - Collector Current (mA) I F - Forward Current (mA) 20 Tamb - Ambient Temperature 16738 1000 100 10 1 10 1 0.1 0.01 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 V F - Forward Voltage (V) 96 11862 Figure 7. Forward Current vs. Forward Voltage 95 11027 1 100 10 I F - Forward Current (mA) Figure 10. Collector Current vs. Forward Current 100 1.20 20 mA I C - Collector Current (mA) CTR rel - Relative Current Transfer Ratio 10 V 100 0 16736 VCE = 30 V 1000 1.00 VCE = 5 V I F = 5 mA 0.80 0.60 0.40 0.20 0.00 - 40 - 20 16737 10 mA 10 5 mA 2 mA 1 1 mA 0.1 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature Document Number 83546 Rev. 1.7, 05-Sep-06 I F = 50 mA 0.1 95 10985 1 10 100 V CE - Collector Emitter Voltage (V) Figure 11. Collector Current vs. Collector Emitter Voltage www.vishay.com 7 TCET1110/TCET1110G TCET1110/TCET1110G VCEsat - Collector Emitter Saturation Voltage (V) Vishay Semiconductors 1.0 ton / toff - Turn on/Turn off Time (µs) 50 20 % 0.8 CTR = 50 % 0.6 0.4 0.2 10 % 0 Saturated Operation VS = 5 V R L = 1 k 40 30 t off 20 10 t on 0 1 100 10 95 11028 I C - Collector Current (mA) 0 95 11031 Figure 12. Collector Emitter Saturation Voltage vs. Collector Current 5 10 15 20 I F - Forward Current (mA) Figure 15. Turn on/off Time vs. Forward Current CTR - Current Transfer Ratio (%) 1000 VCE = 5 V 100 10 1 0.1 1 100 10 I F - Forward Current (mA) 95 11029 Figure 13. Current Transfer Ratio vs. Forward Current ton / toff - Turn on /Turn off Time (µs) 10 8 Non Saturated Operation VS = 5 V R L = 100 ton 6 toff 4 2 0 0 95 11030 2 4 6 8 I C - Collector Current (mA) Figure 14. Turn on/off Time vs. Collector Current www.vishay.com 8 Document Number 83546 Rev. 1.7, 05-Sep-06 TCET1110/TCET1110G TCET1110/TCET1110G Vishay Semiconductors Package Dimensions in mm 14789 Package Dimensions in mm 14792 Document Number 83546 Rev. 1.7, 05-Sep-06 www.vishay.com 9 TCET1110/TCET1110G TCET1110/TCET1110G Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC 88/540/EEC and 91/690/EEC 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 D-74025 Heilbronn, Germany www.vishay.com 10 Document Number 83546 Rev. 1.7, 05-Sep-06 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1