TCDT1120 950/EN TCDT1120/ TCDT1120G TCDT1122/ TCDT1122G1 TCDT1123/ TCDT1123G1 - Datasheet Archive

 

Vishay Telefunken Optocoupler with Phototransistor Output Description The TCDT1120(G) series consists of a phototransistor

 

TCDT1120 TCDT1120(G) Series Vishay Telefunken Optocoupler with Phototransistor Output Description The TCDT1120 TCDT1120(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): 14827 D For appl. class I ­ IV at mains voltage 300 V D For appl. class I ­ III at mains voltage 600 V according to VDE 0884, table 2, suitable for: nc Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. C E 6 5 4 1 2 3 A (+) C (­) VDE Standards D VDE 0884 Optocoupler for electrical safety requirements D IEC 950/EN 950/EN 60950 Office machines (applied for reinforced isolation for mains voltage 400 VRMS) D VDE 0804 Telecommunication processing apparatus and 94 9222 These couplers perform safety functions according to the following equipment standards: nc data D IEC 65 Safety for mains-operated electronic and related household apparatus Order Instruction Ordering Code CTR Ranking 1) TCDT1120/ TCDT1120/ TCDT1120G TCDT1120G >40% TCDT1122/ TCDT1122/ TCDT1122G1 TCDT1122G1) 63 to 125% TCDT1123/ TCDT1123/ TCDT1123G1 TCDT1123G1) 100 to 200% 1) TCDT1124/ TCDT1124/ TCDT1124G TCDT1124G 160 to 320% 1) G = Leadform 10.16 mm; G is not marked on the body Rev. A3, 11­Jan­99 Remarks 1 (11) TCDT1120 TCDT1120(G) Series Vishay Telefunken Features Approvals: D BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402 D FIMKO (SETI): EN 60950, Certificate number 12399 D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 E-76222 D VDE 0884, Certificate number 94778 VDE 0884 related features: D Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) D Rated recurring peak voltage (repetitive) VIORM = 600 VRMS D Creepage current resistance according to VDE 0303/IEC 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation 0.75 mm General features: D Isolation materials according to UL94-VO UL94-VO D Pollution degree 2 (DIN/VDE 0110 resp. IEC 664) D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction: Therefore, extra low coupling capacity of typical 0.3 pF, high Common Mode Rejection D Low temperature coefficient of CTR D Base not connected D CTR offered in 4 groups D Coupling System A Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions tp 10 ms Tamb 25°C Symbol VR IF IFSM PV Tj Value 5 60 3 100 125 Unit V mA A mW °C Symbol VCBO VCEO VECO IC ICM PV Tj Value 90 90 7 50 100 150 125 Unit V V V mA mA mW °C Symbol VIO Ptot Tamb Tstg Tsd Value 3.75 250 ­55 to +100 ­55 to +125 260 Unit kV mW °C °C °C Output (Detector) Parameter Collector base voltage Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions tp/T = 0.5, tp 10 ms Tamb 25°C Coupler Parameter Isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature 2 (11) Test Conditions t = 1 min Tamb 25°C 2 mm from case, t 10 s Rev. A3, 11­Jan­99 TCDT1120 TCDT1120(G) Series Vishay Telefunken Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.6 Unit V pF Test Conditions IC = 100 mA IC = 1 mA IE = 100 mA VCE = 20 V, If = 0 Symbol VCBO VCEO VECO ICEO Min. 90 90 7 Typ. Max. 150 Unit V V V nA Test Conditions IF = 10 mA, IC = 1 mA Symbol VCEsat Min. Max. 0.3 Unit V VCE = 5 V, IF = 10 mA, RL = 100 W f = 1 MHz fc 110 kHz Ck 0.3 pF Output (Detector) Parameter Collector base voltage Collector emitter voltage Emitter collector voltage Collector emitter cut-off current Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Typ. Current Transfer Ratio (CTR) Parameter IC/IF Test Conditions VCE = 5 V, IF = 1 mA VCE = 5 V, IF = 10 mA Rev. A3, 11­Jan­99 Type TCDT1120 TCDT1120(G) TCDT1122 TCDT1122(G) TCDT1123 TCDT1123(G) TCDT1124 TCDT1124(G) TCDT1120 TCDT1120(G) TCDT1122 TCDT1122(G) TCDT1123 TCDT1123(G) TCDT1124 TCDT1124(G) Symbol CTR CTR CTR CTR CTR CTR CTR CTR Min. 0.10 0.15 0.30 0.60 0.40 0.63 1 1.60 Typ. Max. Unit 1.25 2.00 3.20 3 (11) TCDT1120 TCDT1120(G) Series Vishay Telefunken Maximum Safety Ratings (according to VDE 0884) see figure 1 This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Input (Emitter) Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA Test Conditions Tamb 25°C Symbol Psi Value 265 Unit mW Test Conditions Symbol VIOTM Tsi Value 6 150 Unit kV °C Output (Detector) Parameters Power dissipation Coupler Parameters Rated impulse voltage Safety temperature Insulation Rated Parameters (according to VDE 0884) Parameter Test Conditions Partial discharge test voltage ­ 100%, ttest = 1 s Routine test Partial discharge test voltage ­ tTr = 60 s, ttest = 10 s, Lot test (sample test) (see figure 2) Insulation resistance Symbol Vpd VIOTM Vpd RIO RIO 6 1.3 1012 1011 kV kV W W RIO VIO = 500 V VIO = 500 V, Tamb 100°C VIO = 500 V, Tamb 150°C Min. 1.6 Typ. Max. Unit kV 109 W (construction test only) VIOTM 300 V Psi (mW) t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s 250 200 VPd 150 VIOWM V IORM 100 Isi (mA) 50 0 0 0 95 10934 25 50 75 100 125 150 175 200 Tamb ( °C ) Figure 1. Derating diagram 4 (11) t3 ttest t4 t 1 13930 tTr = 60 s t 2 tstres t Figure 2. Test pulse diagram for sample test according to DIN VDE 0884 Rev. A3, 11­Jan­99 TCDT1120 TCDT1120(G) Series Vishay Telefunken Switching Characteristics of TCDT1120 TCDT1120(G) and TCDT1122 TCDT1122(G) Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 10 mA, RL = 100 W (see figure 3) VS = 5 V, IC = 10 mA, RL = 1 kW (see figure 4) Symbol td tr tf ts ton toff ton toff Typ. 2.5 3.0 3.7 0.3 5.5 4.0 16.5 22.5 Unit ms ms ms ms ms ms ms ms Symbol td tr tf ts ton toff ton toff Typ. 2.8 4.2 4.7 0.3 7.0 5.0 21.0 37.5 Unit ms ms ms ms ms ms ms ms Symbol td tr tf ts ton toff ton toff Typ. 2.0 4.0 4.7 0.3 6.0 5.0 20.0 50.0 Unit ms ms ms ms ms ms ms ms Switching Characteristics of TCDT1123 TCDT1123(G) Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 10 mA, RL = 100 W (see figure 3) VS = 5 V, IC = 10 mA, RL = 1 kW (see figure 4) Switching Characteristics of TCDT1124 TCDT1124(G) Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time 0 IF Test Conditions VS = 5 V, IC = 10 mA, RL = 100 W (see figure 3) VS = 5 V, IC = 10 mA, RL = 1 kW (see figure 4) +5V IF IC = 10 mA ; Adjusted through input amplitude RG = 50 W tp = 0.01 T tp = 50 ms 0 IF IF = 10 mA +5V IC RG = 50 W tp + 0.01 T tp = 50 ms Channel I Channel II 50W 100W 95 10848 Figure 3. Test circuit, non-saturated operation Rev. A3, 11­Jan­99 Channel I Oscilloscope w1M RL W CL v 20 pF Channel II 50 W 1 kW Oscilloscope RL 1 MW CL 20 pF 95 10843 Figure 4. Test circuit, saturated operation 5 (11) TCDT1120 TCDT1120(G) Series Vishay Telefunken 96 11698 IF 0 t tp IC 100% 90% 10% 0 t tr td ts ton tp td tr ton (= td + tr) tf toff pulse duration delay time rise time turn-on time ts tf toff (= ts + tf) storage time fall time turn-off time Figure 5. Switching times Typical Characteristics (Tamb = 25_C, unless otherwise specified) 1000.0 Coupled device 250 100.0 200 Phototransistor 150 IR-diode 100 50 0 96 11700 10.0 1.0 0.1 0 40 80 120 Tamb ­ Ambient Temperature ( °C ) Figure 6. Total Power Dissipation vs. Ambient Temperature 6 (11) I F ­ Forward Current ( mA ) P tot ­ Total Power Dissipation ( mW ) 300 96 11862 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF ­ Forward Voltage ( V ) Figure 7. Forward Current vs. Forward Voltage Rev. A3, 11­Jan­99 TCDT1120 TCDT1120(G) Series Vishay Telefunken 100 IF=50mA VCE=5V IF=10mA 1.4 1.3 IC ­ Collector Current ( mA ) CTR rel ­ Relative Current Transfer Ratio 1.5 1.2 1.1 1.0 0.9 0.8 0.7 10mA 5mA 1 2mA 1mA 0.6 CNY75A CNY75A 0.5 ­30 ­20 ­10 0 10 20 30 40 50 60 70 80 96 11918 Tamb ­ Ambient Temperature ( °C ) ICEO­ Collector Dark Current, with open Base ( nA ) 10000 VCE=30V IF=0 1000 100 10 1 0 25 50 75 0.1 100 10 Figure 11. Collector Current vs. Collector Emitter Voltage 1.0 CTR=50% 0.8 CNY75A CNY75A 0.6 0.4 20% 0.2 10% 0 1 100 10 IC ­ Collector Current ( mA ) 95 11034 Figure 12. Collector Emitter Saturation Voltage vs. Collector Current Figure 9. Collector Dark Current vs. Ambient Temperature 1000 CTR ­ Current Transfer Ratio ( % ) 100 VCE=5V 10 1 0.1 TCDT1122 TCDT1122(G) VCE=5V 100 10 1 0.01 0.1 95 11040 1 VCE ­ Collector Emitter Voltage ( V ) 95 11041 100 Tamb ­ Ambient Temperature ( °C ) 95 11038 0.1 V CEsat ­ Collector Emitter Saturation Voltage ( V ) Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature IC ­ Collector Current ( mA ) 20mA 10 1 10 IF ­ Forward Current ( mA ) Figure 10. Collector Current vs. Forward Current Rev. A3, 11­Jan­99 0.1 100 14796 1 10 100 IF ­ Forward Current ( mA ) Figure 13. Current Transfer Ratio vs. Forward Current 7 (11) TCDT1120 TCDT1120(G) Series Vishay Telefunken ton / t off ­ Turn on / Turn off Time ( m s ) CTR ­ Current Transfer Ratio ( % ) 1000 TCDT1123 TCDT1123(G) VCE=5V 100 10 1 1 20 10 ton 0 5 TCDT1124 TCDT1124(G) VCE=5V 100 10 10 20 15 IF ­ Forward Current ( mA ) Figure 17. Turn on / off Time vs. Forward Current ton / t off ­ Turn on / Turn off Time ( m s ) 1000 CTR ­ Current Transfer Ratio ( % ) toff 147800 Figure 14. Current Transfer Ratio vs. Forward Current 1 50 TCDT1124 TCDT1124(G) Saturated Operation VS=5V RL=1kW 40 toff 30 20 10 ton 0 0.1 1 100 10 IF ­ Forward Current ( mA ) 14798 TCDT1122 TCDT1122(G) Saturated Operation VS=5V RL=1kW 30 toff 20 10 5 ton 10 20 15 IF ­ Forward Current ( mA ) Figure 18. Turn on / off Time vs. Forward Current ton / t off ­ Turn on / Turn off Time ( m s ) 50 40 0 147801 Figure 15. Current Transfer Ratio vs. Forward Current ton / t off ­ Turn on / Turn off Time ( m s ) 30 100 10 IF ­ Forward Current ( mA ) 14797 0 20 TCDT1122 TCDT1122(G) Non Saturated Operation VS=5V RL=100W 15 ton 10 toff 5 0 0 5 10 15 20 IF ­ Forward Current ( mA ) Figure 16. Turn on / off Time vs. Forward Current 8 (11) TCDT1123 TCDT1123(G) Saturated Operation VS=5V RL=1kW 40 0 0.1 14799 50 0 147802 2 4 6 8 10 IC ­ Collector Current ( mA ) Figure 19. Turn on / off Time vs. Collector Current Rev. A3, 11­Jan­99 TCDT1120 TCDT1120(G) Series 20 ton / t off ­ Turn on / Turn off Time ( m s ) ton / t off ­ Turn on / Turn off Time ( m s ) Vishay Telefunken TCDT1123 TCDT1123(G) Non Saturated Operation VS=5V RL=100W 15 10 ton 5 toff 0 TCDT1124 TCDT1124(G) Non Saturated Operation VS=5V RL=100W 15 ton 10 toff 5 0 0 147803 20 2 4 6 8 10 IC ­ Collector Current ( mA ) 0 147804 Figure 20. Turn on / off Time vs. Collector Current 2 4 6 8 10 IC ­ Collector Current ( mA ) Figure 21. Turn on / off Time vs. Collector Current Type Date Code (YM) XXXXXX 918 A TK 63 V 0884 D E Production Location Safety Logo 15090 Coupling System Indicator Company Logo Figure 22. Marking example Rev. A3, 11­Jan­99 9 (11) TCDT1120 TCDT1120(G) Series Vishay Telefunken Dimensions of TCDT112 TCDT112.G in mm weight: creepage distance: air path: ca. 0.50 g y 8 mm y 8 mm after mounting on PC board 14771 Dimensions of TCDT112 TCDT112. in mm weight: creepage distance: air path: 0.50 g y 6 mm y 6 mm after mounting on PC board 14770 10 (11) Rev. A3, 11­Jan­99 TCDT1120 TCDT1120(G) Series Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC 88/540/EEC and 91/690/EEC 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Rev. A3, 11­Jan­99 11 (11)