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Part : TCD1254GFG(8Z) Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : TCD1254GFG(8Z,AA) Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : $2.7632 Price Each : $3.8182
Part : TCD1254GFG(8Z) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 20 Best Price : $30.2000 Price Each : $40.00
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TCD1254GFG(8Z)

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: IGBT GHF1 8Z W PX YH :H 8Z W NXO YH Values Units G NOO L 8%'0) W ]X YH ]X L NXO L a PO G 8Z W NPX YH NO f0 8%'0) W PX YH ]X L 8%'0) W gO YH :H^_ ¥OO 8%'0) W PX YH XO L NXO L 8Z W NXO YH hhO L 8% W PX YH NOO , Inverse Diode Superfast NPT-IGBT Modules :I 8Z W NXO YH :I^_WP`:I(,- :I1_ SKM 75GB063D :I^_ 49 W NO -0c 02(E Freewheeling Diode :I 8Z W NXO YH :I^_ :I^_WP`:I(,- :I1 Toshiba
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TCD1254GFG

TCD1254GFG(8Z)

Abstract: HZU6.8Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-777(Z) Rev 0 Feb. 1 , Package Code HZU6.8Z 68Z URP Outline Cathode mark Mark 1 68Z 2 1. Cathode 2. Anode HZU6.8Z Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit 200 *1 , *2 Notes 1. Failure criterion ; IR > 2 µA at VR = 3.5V. 2 HZU6.8Z Main Characteristic , 10 -1 10 1.0 (s) Fig.3 Surge Reverse Power Ratings 3 HZU6.8Z Main
SEMIKRON
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75GAR063D 75GAL063D

6.8z

Abstract: 68z2 HZU6.8Z Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-777(Z) Rev 0 , . Laser Mark Package Code HZU6.8Z 68Z URP Outline Cathode mark Mark 1 |j .-Li :68Z i I] 2 1. Cathode 2. Anode HZU6.8Z Absolute Maximum Ratings (Ta = 25°C) Item Symbol , > 2 ^A at VR = 3.5V. 2 HITACHI HZU6.8Z Main Characteristic 10 '' 10 10 o CD O , bient Tem perature Surge Reverse Power Ratings 3 HITACHI HZU6.8Z Main Characteristic
Hitachi Semiconductor
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6.8z 68z2 Hitachi DSA00305 D-85622
Abstract: m akes the PE E L18C V 8Z ideal for a broad range of battery-pow ered portable equipm ent , anufacturing, including Engineering C hange Orders. Figure 1 /C L K The PE E L18C V 8Z is logically and , betw een the PE E L18C V 8Z and PE EL18C V8 include the addition of program m able clock polarity, a , PEEL18C V8, the PE E L18C V 8Z is logical superset of the industry standard PAL16V8 SPLD. The PEEL18C V8Z , V 8Z architecture w ithout the need for redesign. The P E EL18C V8Z architecture allow s it to -
OCR Scan
Abstract: 1 8 /2 2 8Z 600/12 SZ 600/13 SZ 600/15 SZ 600/16 SZ 600/18 8Z 600/20 SZ 600/22 SZZ 19/5»1 . SZZ 1 9 , 22 - 12 H*rstall«r 7 7 7 7 7 7 7 7 7 7 7 7 DDE-Typ 8Z 8Z 8Z 600/13 600/15 6 00/16 600/18 600 , W S G W S G W S B e n » . sz 8Z SZ 8Z SZ 8Z 8Z BZ SZ 88 ST 8T ST 8T ST ST ST ST 8T ST ST ST , ST SI ST ST SA SA SA (SZZ ST ST ST ST SZZ SZZ SZZ SZZ SZZ SZZ SZZ 8ZZ SZZ SZ. sz SZ SZ SZ 8Z SZ SZZ , / 100T * 158/2001 TI 58/3O0T *158/4001 *158 600-C01 T I58 800-CQ1 8* 8* 81 81 81 81 8Z SI 81 81 81 81 -
OCR Scan
18CV8Z-25 407D7

IC 7447

Abstract: "halbleiterwerk frankfurt" products contained therein. HZU6.8Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE , Type No. Laser Mark Package Code HZU6.8Z 68Z URP Pin Arrangement Cathode mark Mark 1 68Z 2 1. Cathode 2. Anode HZU6.8Z Absolute Maximum Ratings (Ta = 25°C) Item , .2001, page 2 of 6 HZU6.8Z Main Characteristic 10-2 250 -4 10 10-5 10-6 0 2 4 , HZU6.8Z Transient Thermal Impedance Zth (°C/W) 104 103 102 10 1.0 10-2 10-1
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OCR Scan
IC 7447 dioda by 238 IC 7495 vergleichsliste SYk 04
Abstract: HZU6.8Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-777(Z) Rev 0 Feb. 1999 , Code HZU6.8Z 68Z URP Outline Cathode mark Mark 1 68Z 2 1. Cathode 2. Anode HZU6.8Z Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit 200 *1 mW , *2 Notes 1. Failure criterion ; IR > 2 µA at VR = 3.5V. 2 HZU6.8Z Main Characteristic , 10 -1 10 1.0 (s) Fig.3 Surge Reverse Power Ratings 3 HZU6.8Z Main Hitachi Semiconductor
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D-85619
Abstract: HZU6.8Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-777A (Z) Rev.1 Nov , Package Code HZU6.8Z 68Z URP Pin Arrangement Cathode mark Mark 1 68Z 2 1. Cathode 2. Anode HZU6.8Z Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Power , Note: Failure criterion ; IR > 2 µA at VR = 3.5 V. Rev.1, Nov.2001, page 2 of 6 HZU6.8Z Main , Power Ratings Rev.1, Nov. 2001, page 3 of 6 HZU6.8Z Transient Thermal Impedance Zth (°C/W Hitachi Semiconductor
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DSA003643

Abstract: HZU6.8Z mW) (110 â'" 130 mW) 445 to 447.5nm BXCE2424445- 7-z BXCE2424445- 8-z 447.5 to 450nm BXCE2424447- 7-z BXCE2424447- 8-z 450 to 452.5nm BXCE2424450- 7-z BXCE2424450- 8-z 452.5 to 455nm BXCE2424452- 7-z BXCE2424452- 8-z 455 to 457.5nm BXCE2424455- 7-z BXCE2424455- 8-z 457.5 to 460nm BXCE2424457- 7-z BXCE2424457- 8-z 460 to 462.5nm BXCE2424460- 7-z BXCE2424460- 8-z 462.5 to 465nm BXCE2424462- 7-z BXCE2424462- 8-z Product Nomenclature BXCE
Hitachi Semiconductor
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DSA003643 HZU6.8Z
Abstract: TP16-2Z TP16-6Z TP16-8Z TP16-10Z TP14-2Z TP14-6Z TP14-8Z TP14-10Z TP10-6Z TP10-8Z TP10-10Z * 1000/Reel Bridgelux
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DS-C13

TCD2964BFG

Abstract: TCD1254GFG HZU6.8Z Silicon Epitaxial Planar Zener Diode for Surge Absorb REJ03G1219-0200 (Previous: ADE , Type No. HZU6.8Z Laser Mark 68Z Package Name URP Pin Arrangement Cathode mark Mark 1 , ) PTSP0002ZA-A (URP) HZU6.8Z Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction , direction 10 pulse HZU6.8Z Main Characteristic 10-2 250 Zener Current IZ (A) 10-4 10-5 , HZU6.8Z Transient Thermal Impedance Zth (°C/W) 104 103 102 10 1.0 10-2 10-1
Toshiba
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SCJ0004N TCD2964BFG tcd2564dg TCD2716DG TCD2712DG TCD2717BFG tcd2563bfg TLN108 TLN105B TLN110 TLN115A TLN231

MR8-89-1

Abstract: BA10EZ8 ]cb^cb , 3 7z 8z N J 3 J]ZbOUS ]cb^cb . 3 .J:9k.u / 3 7z 8z N A 3 AW\S R`WdS` ]cb^cb *+ 3 *+J:9k.u 7z 8z N oHVS ^]eS` ]T AW\S R`WdS` Wa ]\Zg T]` .J:9| A]OR y GW\Y Qc``S { 3BOf| ,~[7 ~J , { -{B+L~|- H7E ~J * HVS ]cb^cb QW`QcWb ]T 7z 8z N ^VOaS O`S bVS aO[S| wAW\S R`WdS` ]cb^cb Wa 7z 7z 8z 8z Nz Nx hKWT PQ^eT b_TRXUXRPcX^]b PaT RWP]VTPQ[T Pc P]gcX\T fXcW^dc ]^cXRT0 ,k~|* +{F , D`O\US3DIH N 8ZcS3=C:w~Jx GVWSZR3
FCI
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BA10EZ8 MR8-89-1 BURNDY ba10 TP16-8Z TP14-8Z TP10-8Z 1000/R BA16EZ2 BA16EZ6

PTSP0002ZA-A

Abstract: (VDC) B1-12 175 1.0 12.0 70 5 35.0 HH 12.5 B2-8Z 175 2.0 10.0 60 10 17.5 GG 8.0 B3-12 175 3.0 10.0 60 10 17.5 AA 12.5 B5-8Z 175 5.0 9.0 60 25 7.0 GG 8.0 B8-12 175 8.0 10.0 60 25 7.0 AA 12.5 B12 , 5 35.0 GG 12.5 C1-12Z 470 1.0 10.0 65 5 35.0 BB 12.5 C2-8Z 470 2.0 6.0 60 10 17.5 GG 8.0 C3-12 470 4.0 6.0 60 10 17.5 AA 12.5 C5-8Z 470 5.0 4.0 60 25 7.0 GG 8.0 C5-12 470 5.0 9.5 60 20 8.8 BB
Renesas Technology
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Abstract: friA) 100 100 GAL16V8Z-12QP GAL16V8Z-12QJ Specifications G A L 16V 8Z G A L16V 8ZD Ordering # , configuration for all macrocells. The Specifications G A L 16V 8Z G A L16V 8ZD XOR bit of each macrocell , . Specifications G A L 16V 8Z G A L16V 8ZD Registered outputs have eight product terms per output. I/O's have , . Designs requiring eight l/O's can be implemented in the Registered mode. Specifications G A L 16V 8Z G , COMPLEX MODE LOGIC DIAGRAM 1D >- Specifications G A L 16V 8Z G A L16V 8ZD DIP, soie & PLCC Package -
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97HDF

CD2545

Abstract: CD7012 H5C4 CHARACTERISTICS EEM CORE AL-value(nH/N2) ­20°C H5C4EEM12.7/13.7-Z 2500min. H5C4EEM8/8-Z , .9/8-Z 1700min. · Measuring conditions: EE5:10kHz, 10mV, ø0.1mm, 100ts./EE8.9:10kHz, 10mV, ø0 , -Z H5C4ER14.5/6-Z H5C4EPC10-Z H5C4EPC13-Z H5C4EEM12.7/13.7-Z H5C4EEM8/8-Z H5C4EEM10/10-Z H5C4EEM13/13-Z H5C4EE5-Z H5C4EE8.9/8-Z H5C4EP7-Z H5C4EP10-Z H5C4EP13-Z H5C4RM5Z-12 H5C4RM6Z-12 H5C4T3
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OCR Scan
A3-12 A25-12 CD2514 CD2545 CD7012 B12-12 CM45-12A BM70-12 CD5944

L16V

Abstract: 16V8Z w n Pin on G A L 20V 8Z D â'" Inp u t and O u tp u t L atch ing D uring P o w e r Dow n /O/Q , Configuration DIP The G A L2 0V 8Z and G A L20V 8Z D , at 100 stan dby current and 1 2 ns pro p a g a tio , ila b le in th e m arke t. T he G A L20V 8Z /ZD is m anufactured using Lattice S em iconductor's ad , 1 0 0 G A L 2 0V 8Z -12 Q P 24-P in P lastic DIP 55 1 0 0 G A L2 0V 8Z -12 Q J 28 -L e a d PLC C 55 1 0 0 G A L 2 0V 8Z -15 Q P 24-P in P lastic DIP 55 1 0 0 G A
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OCR Scan
L16V 16V8Z GAL16V8Z GAL16V8ZD GAL16V8Z/ZD

EE 20 bobbin

Abstract: TDK RM6 % PC45EEM8/8-Z 390±25% PC45EEM8/8A25 25±10% PC45EEM8/8A40 40±15% PC46EEM8/8-Z 410±25% PC46EEM8/8A25 , Part No. PC45EE5-Z PC45EE5A25 PC46EE5-Z PC46EE5A25 PC45EE8.9/8-Z PC45EE8.9/8A25 PC45EE8.9/8A40 PC46EE8.9/8-Z PC46EE8.9/8A25 PC46EE8.9/8A40 · Measuring conditions: EE5:1kHz, 0.5mT, ø0.1mm, 100ts
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ER11/5 EPC13 EE 20 bobbin TDK RM6 EE 35 bobbin BEP-13-3110D EE 60 bobbin EE 13 type bobbin ER11/3 EPC10 EEM10/10 EEM12
Abstract: SEMICONDUCTOR MMBZ5249B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8Z No. Item Device Mark 8Z MMBZ5249B - - - * Lot No. 1 Marking 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method 1st Character Character arrangement 2nd Character Year 1 (A) A (1) 2 (B) B (2) 3 (C) C (3) Marking(Week) 4 (D) D (4) 5 (E) E (5) 6 -
OCR Scan
GAL20V8Z GAL20V8ZD
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