NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| TBB1002 | Hitachi Semiconductor | High Frequency Amplifiers(Twin Type) |
11 pages, |
Original |  |
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| TBB1002 | Renesas Technology / Hitachi Semiconductor | Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
10 pages, |
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| TBB1002 | Renesas Technology / Hitachi Semiconductor | Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
10 pages, |
Original | |
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| TBB1002 | Renesas Technology / Hitachi Semiconductor | Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
13 pages, |
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| TBB1002 | Renesas Technology / Hitachi Semiconductor | Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
10 pages, |
Original | |
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| TBB1002BMTL-E | Renesas Technology / Hitachi Semiconductor | Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
10 pages, |
Original | |
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| TBB1002-E | Renesas Technology / Hitachi Semiconductor | MOSFET: Enhancement: N Channel: 6V: 6-Pin |
10 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: TBB1002 Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-987F ADE-208-987F (Z) 7th. , Gate-1(2) Marking is "BM". TBB1002 is individual type number of HITACHI TWIN BBFET. TBB1002 , ) 2 TBB1002 Electrical Characteristics (Ta = 25°C) The below specification are applicable for , NF - 1.2 1.7 dB RG = 82k, f = 200MHz 3 TBB1002 Test Circuits · DC Biasing , TBB1002 · Equivalent Circuit No.1 No.6 Gate-1(1) Gate-1(2) BBFET-(1) BBFET-(2) No.2 ... | Original |
11 pages, |
TBB1002 1SV70 SMD MARKING CODE sg ADE-208-987F TBB1002 abstract |
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| Abstract: products contained therein. TBB1002 Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier , (2) 5. Gate-2 6. Gate-1(2) Marking is "BM". TBB1002 is individual type number of HITACHI TWIN BBFET. TBB1002 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to , figure NF - 1.7 2.5 dB Zi=S11opt (:NF) 2 TBB1002 Electrical Characteristics , 82k, f = 200MHz 3 TBB1002 Test Circuits · DC Biasing Circuit for Operating Characteristic ... | Original |
13 pages, |
TBB1002 1SV70 datasheet abstract |
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| Abstract: 1.5 l1 Q Max 1.1 0.1 1.0 0.25 0.9 Ordering Information Part Name TBB1002BMTL-E , TBB1002 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier REJ03G0841-0800 REJ03G0841-0800 (Previous , Marking is "BM". 2. TBB1002 is individual type number of RENESAS TWIN BBFET. Rev.8.00 Aug 10, 2005 page 1 of 9 1. Gate-1(1) 2. Source 3. Drain(1) 4. Drain(2) 5. Gate-2 6. Gate-1(2) TBB1002 , = 100 k, f = 900 MHz Zi =S11*, Zo=S22*(:PG) Zi =S11opt (:NF) TBB1002 Electrical ... | Original |
10 pages, |
TBB1002BMTL-E TBB1002 smd code marking BM 1SV70 smd diode marking BM 06 REJ03G0841-0800 ADE-208-987F TBB1002 abstract |
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| Abstract: 1.5 0.9 0.25 Ordering Information Part Name TBB1002BMTL-E Quantity 3000 Shipping , TBB1002 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier REJ03G0841-0900 REJ03G0841-0900 Rev.9.00 , : PTSP0006JA-A PTSP0006JA-A (Package name: CMPAK-6) 6 5 4 2 3 1 Notes: 1. Marking is "BM". 2. TBB1002 , ) 2. Source 3. Drain(1) 4. Drain(2) 5. Gate-2 6. Gate-1(2) TBB1002 Absolute Maximum Ratings , ) Zi =S11opt (:NF) TBB1002 Electrical Characteristics (cont.) (Ta = 25°C) The below ... | Original |
10 pages, |
TBB1002BMTL-E TBB1002 smd diode marking BM RG 56 1SV70 smd code marking BM REJ03G0841-0900 TBB1002 abstract |
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| Abstract: 1.5 0.9 0.25 Ordering Information Part Name TBB1002BMTL-E Quantity 3000 Shipping , TBB1002 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier REJ03G0841-0900 REJ03G0841-0900 Rev.9.00 Aug 22 , : PTSP0006JA-A PTSP0006JA-A (Package name: CMPAK-6) 6 5 4 2 3 1 Notes: 1. Marking is "BM". 2. TBB1002 , ) 2. Source 3. Drain(1) 4. Drain(2) 5. Gate-2 6. Gate-1(2) TBB1002 Absolute Maximum Ratings , ) Zi =S11opt (:NF) TBB1002 Electrical Characteristics (cont.) (Ta = 25°C) The below ... | Original |
12 pages, |
TBB1002BMTL-E TBB1002 1SV70 datasheet abstract |
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| Abstract: ) VHF RF TBB1002: BB502 BB502&BB305 BB305 TBB1004 TBB1004: UHF:BB502 BB502 VHF:|yfs|=32mS chip TBB1005 TBB1005: Pin modified version of TBB1002 BB-(1) UHF RF 1 2 L OUT PUT S VDD = 5 V VDD = 5 V 6 D , Low-voltage operation (5 V) 6 New products BIC702M/C BIC702M/C BIC703M/C BIC703M/C TBB1002, TBB1004 TBB1004, TBB1005 TBB1005, (CMPAK-6 ... | Original |
19 pages, |
small signal transistor TBB1002 TBB1004 TBB1005 tsop-6 Pch FET TSOP8 VCR modulators tuners h5n0301mf fet small signal VHF lna 30 to Mosfet transistor hitachi HAT1068C HAT3016G datasheet abstract |
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| Abstract: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance Diodes Linearity and change ratio Smaller, composite packages High fT High-Frequency Devices Efficiency Smaller packages For details, see the following ... | Original |
56 pages, |
SCHEMATIC 1000w inverter washing machine lg rjh60d7 RJH60 cr3as SCHEMATIC 1000w smps CR3AS-12 RJP6006DPK HAT1130r rjp6065dpm triac kt 207 600v RJH60F7 TRANSISTOR SMD MARKING CODE jg datasheet abstract |
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| Abstract: 5-V operation U/ VHF RF TBB1001 TBB1001.Corresponding BB303 BB303 (two devices) TBB1002.Corresponding , ) Package MPAK-4 CMPAK-4 BIC702M/C BIC702M/C TBB1002, TBB1004 TBB1004 (CMPAK-6) Under development BB504C BB504C ... | Original |
17 pages, |
RF TRANSISTOR 10GHZ datasheets of ic 1408 3SK318 fet ft 20 GHZ 2SC5628 2SC4784F SMD TRANSISTOR fet smd transistor 2Q TRANSISTOR SMD mos fet specifications of ic 1408 A08 smd transistor lg tv electronic diagram BB304M datasheet abstract |
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| Abstract: H945 RJP3042 RJP3063 RJH3077DPK RJK0406 H945 equivalent Rjp30 RJH30 RJH3047DPK rjp3049 rjp3053 rjp6065 rjp3047 rjh3077 rjh3047 2.2 1.3 TBB1002 VDD =9V RG TBB1004 TBB1004 Three R and one C parts eliminated TBB1005 TBB1005 , TBB series (2 in 1) for TV tuners Pin assignments U/V RF 1 Pa c k a g e TBB1002 TBB1004 TBB1004 ... | Original |
82 pages, |
free transistor equivalent book 2sc h945 transistor ir model HZK 219 transistor h945 smd code FX mosfet datasheet abstract |
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| Abstract: GN6030v4 TBB1002 TBB1004 TBB1004 TBB1005 TBB1005 TBB1008 TBB1008 6 6 6 6 Ciss (pF) typ 1.8 1.8 1.8 1.8 ... | Original |
16 pages, |
HIT5609 ix 2933 2SK3464 transistor ZY bc 9013 h8550 transistor 5609 H9013 transistor hitachi zy 08122B H945 2sk3545 transistor h945 HITACHI 08123B datasheet abstract |
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| Infineon (Siemens) Part | Status | Industry Part | Manufacturer | Description |
| BG3123RE6327 Buy | Discontinued | TBB1002 Buy | Renesas |