NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: IRFF220 IRFF220 Data Sheet March 1999 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET · 3.5A, 200V · rDS(ON) = 0.800 · Single Pulse Avalanche Energy Rated · SOA is Power Dissipation Limited · Nanosecond Switching Speeds · Linear Transfer Characteristics · High Input Impedance · Related Literature - TB334 TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Formerly developmental type TA9600. Ordering Information PACKAGE 1889.3 Features This N-Channel enhancement mode ... | Original |
7 pages, |
TB334 TA9600 IRFF220 IRFF220 abstract |
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| Abstract: integrated circuits. Formerly developmental type TA9600. Ordering Information PART NUMBER July 1999 ... | Original |
7 pages, |
TB334 TA9600 IRFU220 IRFR220 JEDEC TO-251AA IFU220 ifr220 IRFR220 abstract |
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| Abstract: IRF620 IRF620 Data Sheet June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET · 5.0A, 200V Formerly developmental type TA9600. Ordering Information PACKAGE 1577.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching ... | Original |
7 pages, |
transistor irf620 TB334 TA9600 IRF620 application IRF620 IRF620 abstract |
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| Abstract: Components to PC Boards" Formerly developmental type TA9600. Symbol Ordering Information PART ... | Original |
7 pages, |
IFR622 IFR623 IRF620 IRF621 IRF622 IRF623 IRF623 harris TA9600 IRF620 HARRIS TB334 IRF620 abstract |
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| Abstract: integrated circuits. Formerly developmental type TA9600. Ordering Information PART NUMBER January ... | Original |
7 pages, |
TB334 TA9600 IRFU220 IRFR220 IFU220 ifr220 IRFR220 abstract |
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| Abstract: directly from integrated circuits. Formerly developmental type TA9600. Ordering Information PART ... | Original |
7 pages, |
transistor irf620 TB334 TA9600 IRF620 IRF620 abstract |
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| Abstract: Boards" Formerly developmental type TA9600. Ordering Information PART NUMBER PACKAGE Symbol ... | Original |
7 pages, |
TB334 TA9600 IRFF220 IRFF220 abstract |
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| Abstract: 20N60A4 ur620c d15p05 75307D RHR15120 76107d DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS(ON) VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA MS-012AA (SO-8) MO-153AA MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 RF1K49093 - 12 2.5/3.5 - 0.050/0.130 Complementary N & P RF1K49092 RF1K49092 - 20 5.00 - 0.045@4.5V 0.077 Dual P - ITF87056DQT ITF87056DQT 20 ... | Original |
2688 pages, |
buz11 SPICE HRF3205 equivalent irf710 "spice model" Transistor 65e8 65e9 transistor SD MOSFET DRIVE DATASHEET 4468 8 PIN transistor 75307D 1-888-INTERSIL 1-888-INTERSIL abstract |
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| Abstract: This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). Infrared Light Emitting Diodes LN175 LN175 GaAlAs Infrared Light Emitting Diode For optical control systems Features High-power output, high-efficiency: PO = 12 mW (typ.) Emitted light spectrum suited for silicon photodetectors: P = 900 nm (typ.) Good radiant power output linearity with respect to input current Wide directivity: = 120° (typ.) Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating U ... | Original |
4 pages, |
LN175 2002/95/EC 2002/95/EC abstract |
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