ISL9R3060P2 TA49411 R3060P2 TB334

Data Sheet May 2001 30A, 600V StealthTM Diode Features itle UF7 3P The ISL9R3060P2 is a StealthTM diode optimized for low loss

ISL9R3060P2 ISL9R3060P2 Data Sheet May 2001 30A, 600V StealthTM Diode Features itle UF7 3P The ISL9R3060P2 ISL9R3060P2 is a StealthTM diode optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRRM ) and exceptionally soft recovery under typical operating conditions. · Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . tb / t a > 1.2 F76 D3 This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the StealthTM diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. bA, V, 22 m, an- Formerly developmental type TA49411 TA49411. ISL9R3060P2 ISL9R3060P2 gic vel wer OSTs) tho yrds er- · Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V · Avalanche Energy Rated Applications · Switch Mode Power Supplies · Hard Switched PFC Boost Diode · UPS Free Wheeling Diode · SMPS FWD PACKAGE TO-220AC · Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC · Motor Drive FWD Ordering Information PART NUMBER · Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . . . trr < 35ns BRAND R3060P2 R3060P2 · Snubber Diode Packaging NOTE: When ordering, use the entire part number. JEDEC TO-220AC Symbol ANODE CATHODE K CATHODE (FLANGE) A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified SYMBOL 600 V Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 V Average Rectified Forward Current 30 A IFRM Repetitive Peak Surge Current (20kHz Square Wave) 70 A IFSM wer OS- UNITS Peak Repetitive Reverse Voltage VRWM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 325 A Power Dissipation 200 W VR angic vel raF ISL9R3060P2 ISL9R3060P2 V RRM IF(AV) mitor, PD EAVL TJ, TSTG TL Tpkg PARAMETER Avalanche Energy (1A, 40mH) Operating and Storage Temperature Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 TB334 20 mJ -55 to 175 oC 300 260 oC oC 0.75 oC/W 62 oC/W THERMAL SPECIFICATIONS R JC Thermal Resistance Junction to Case RJA Thermal Resistance Junction to Ambient NOTES: CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2001 Fairchild Semiconductor Corporation ISL9R3060P2 ISL9R3060P2 Rev. A ISL9R3060P2 ISL9R3060P2 Electrical Specifications TC = 25oC, Unless Otherwise Specified SYMBOL MIN TYP MAX UNITS IF = 30A - 2.1 2.4 V IF = 30A, TC = 125 oC - 1.7 2.1 V VR = 600V - - 100 µA VR = 600V, TC = 125oC - - 1.0 mA IF = 1A, dIF/dt = 100A/µs, VR = 30V - 27 35 ns IF = 30A, dIF/dt = 100A/µs, VR = 30V - 36 45 ns IF = 30A, dIF/dt = 200A/µs, VR = 390V, TC = 25oC - 36 - ns IRRM - 2.9 - A QRR - 55 - nC - 110 - ns S - 1.9 - IRRM - 6 - A QRR - 450 - nC - 60 - ns S - 1.25 - IRRM - 21 - A QRR - 730 - nC dIM/dt - 800 - A/µs - 120 - pF VF IR trr trr trr trr CJ TEST CONDITION IF = 30A, dIF/dt = 200A/µs, VR = 390V, TC = 125oC IF = 30A, dIF/dt = 1000A/µs, VR =390V, TC = 125 oC VR = 10V, IF = 0A DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%) IRRM = Maximum reverse recovery current. pw = pulse width. QRR = Reverse recovery charge. D = Duty cycle IR = Instantaneous reverse current. dIM/dt = Maximum di/dt during tb. CJ = Junction Capacitance. trr = Reverse recovery time (ta + tb). S = Softness factor (t b / ta). ©2001 Fairchild Semiconductor Corporation ISL9R3060P2 ISL9R3060P2 Rev. A ISL9R3060P2 ISL9R3060P2 Typical Performance Curves 60 5000 175oC IR, REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 175oC 50 25oC 150 oC 40 125oC 30 20 100oC 10 0 0 0.5 1.0 1.5 2.0 2.5 1000 150oC 125oC 100 100oC 75oC 10 1 25oC 0.1 100 3.0 Figure 1. Forward Current vs Forward Voltage t , RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 500 600 VR = 390V, TJ = 125°C 80 70 60 50 40 30 20 100 tb AT IF = 60A, 30A, 15A 80 60 40 20 10 ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs 0 10 30 40 20 IF, FORWARD CURRENT (A) 50 ta AT IF = 60A, 30A, 15A 0 200 60 400 600 800 1000 1200 1400 dIF /dt, CURRENT RATE OF CHANGE (A/µs) 20 VR = 390V, TJ = 125°C dIF/dt = 800A/µs 18 16 14 dIF/dt = 500A/µs 12 10 8 dIF/dt = 200A/µs 6 0 10 20 30 40 IF, FORWARD CURRENT (A) 50 Figure 5. Maximum Reverse Recovery Current vs Forward Current ©2001 Fairchild Semiconductor Corporation 1600 Figure 4. ta and t b Curves vs dIF /dt 60 I RRM , MAX REVERSE RECOVERY CURRENT (A) Figure 3. ta and tb Curves vs Forward Current IRRM , MAX REVERSE RECOVERY CURRENT (A) 400 120 VR = 390V, TJ = 125°C 90 tb AT dIF/dt = 200A/µs, 500A/µs, 800A/µs 4 300 Figure 2. Reverse Current vs Reverse Voltage 100 0 200 VR , REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) 30 VR = 390V, TJ = 125°C IF = 60A 25 IF = 30A 20 IF = 15A 15 10 5 0 200 400 600 800 1200 1400 1000 dIF /dt, CURRENT RATE OF CHANGE (A/µ s) 1600 Figure 6. Maximum Reverse Recovery Current vs dIF /dt ISL9R3060P2 ISL9R3060P2 Rev. A ISL9R3060P2 ISL9R3060P2 (Continued) QRR, REVERSE RECOVERY CHARGE (nC) S, REVERSE RECOVERY SOFTNESS FACTOR Typical Performance Curves 2.5 VR = 390V, TJ = 125°C IF = 60A IF = 30A 2.0 1.5 IF = 15A 1.0 0.5 200 400 600 800 1000 1200 1400 1600 1200 VR = 390V, TJ = 125°C IF = 60A 1000 IF = 30A 800 600 IF = 15A 400 200 0 dIF /dt, CURRENT RATE OF CHANGE (A/µs) 200 400 600 800 1000 1200 1400 1600 dIF /dt, CURRENT RATE OF CHANGE (A/µ s) Figure 7. Reverse Recovery Softness Factor vs dIF /dt Figure 8. Reverse Recovery Charge vs dIF/dt CJ , JUNCTION CAPACITANCE (pF) 1000 800 600 400 200 0 0.1 1 10 100 VR , REVERSE VOLTAGE (V) Figure 9. Junction Capacitance vs Reverse Voltage THERMAL IMPEDANCE Z JA, NORMALIZED 1.0 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10 -1 t, RECTANGULAR PULSE DURATION (s) 100 101 Figure 10. Normalized Maximum Transient Thermal Impedance ©2001 Fairchild Semiconductor Corporation ISL9R3060P2 ISL9R3060P2 Rev. A ISL9R3060P2 ISL9R3060P2 Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT RG VGE CURRENT SENSE + - MOSFET t1 IF VDD dIF trr dt ta tb 0 0.25 IRM t2 IRM Figure 11. trr Test Circuit Figure 12. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1 VDD = 50V VAVL EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT V R(AVL) L R CURRENT SENSE + VDD IL IL I V Q1 VDD DUT Figure 13. Avalanche Energy Test Circuit ©2001 Fairchild Semiconductor Corporation - t0 t1 t2 t Figure 14. Avalanche Current and Voltage Waveforms ISL9R3060P2 ISL9R3060P2 Rev. A ISL9R3060P2 ISL9R3060P2 TO-220AC 2 LEAD JEDEC TO-220AC PLASTIC PACKAGE (FOR RECTIFIERS ONLY) INCHES A ØP E A1 MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES b1 L b - 0.030 0.034 0.77 0.86 3, 4 b1 0.045 0.055 1.15 1.39 2, 3 0.014 0.019 0.36 0.48 2, 3, 4 0.590 0.610 14.99 15.49 - - 0.160 4.06 - 0.395 0.410 10.41 - - 0.030 10.04 - 5.08 BSC - 0.235 0.255 5.97 6.47 - J1 2 0.200 BSC 0.76 e1 H1 c 60 o 1 - 1.32 E1 L1 4.57 1.22 E D1 4.32 0.052 D1 45o E1 0.180 0.048 c TERM. 3 D 0.170 D H1 A A1 b Q 5 0.100 0.110 2.54 2.79 6 0.530 0.550 13.47 13.97 - 0.130 0.150 3.31 3.81 2 ØP 0.149 0.153 3.79 3.88 - Q J1 L L1 e1 0.102 0.112 2.60 2.84 - NOTES: 1. These dimensions are within allowable dimensions of Rev. J of JEDEC TO-220AC outline dated 3-24-87. 2. Lead dimension and finish uncontrolled in L1. 3. Lead dimension (without solder). 4. Add typically 0.002 inches (0.05mm) for solder coating. 5. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 6. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 7. Controlling dimension: Inch. 8. Revision 3 dated 7-97. ©2001 Fairchild Semiconductor Corporation ISL9R3060P2 ISL9R3060P2 Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnsignaTM FACTTM FACT Quiet SeriesTM FAST® FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench® QFETTM QSTM QT OptpelectronicsTM Quiet SeriesTM SILENTSWITCHER® SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET® VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H2