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Part : WTA40PD9SYL Supplier : Airborn Manufacturer : Powell Electronics Stock : - Best Price : $26.35 Price Each : $80.60
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Part : NJ3TTA-4-I Supplier : Neutrik Manufacturer : Master Electronics Stock : 26 Best Price : $12.60 Price Each : $14.77
Part : 107TTA450M Supplier : Illinois Capacitor Manufacturer : New Advantage Stock : 150 Best Price : $4.06 Price Each : $4.46
Part : 475TTA450M Supplier : Illinois Capacitor Manufacturer : New Advantage Stock : 400 Best Price : $0.6870 Price Each : $0.8938
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Part : MMBTA42LT1G Supplier : ON Semiconductor Manufacturer : Wuhan P&S Stock : 20,000 Best Price : $0.03 Price Each : $0.04
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TA49369

Catalog Datasheet MFG & Type PDF Document Tags

3N60A4D

Abstract: TA49369 anti-parallel is the development type TA49369. This IGBT is ideal for many high voltage switching applications , TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms HGTP3N60A4D DIODE TA49369 = VDD =
-
OCR Scan
HGT1S3N60A4DS 3N60A4D HGT1S3N60A4DS9A A9688 5LEC TA49327 TA49329 IS09000

3n60a4d

Abstract: 3N60A4 development type TA49327. The diode used in anti-parallel is the development type TA49369. This IGBT is , DIODE TA49369 VGE 90% 10% E0N2 EOFF L = 1mH ICE RG = 50 ICE 90% DUT VCE + -
Fairchild Semiconductor
Original
3N60A4

3N60A4

Abstract: development type TA49327. The diode used in anti-parallel is the development type TA49369. This IGBT is , Test Circuit and Waveforms HGTP3N60A4D DIODE TA49369 VGE 90% 10% E0N2 EOFF L = 1mH ICE
Fairchild Semiconductor
Original

3N60A4D

Abstract: 3n60a4 development type TA49327. The diode used in anti-parallel is the development type TA49369. This IGBT is , , JUNCTION TO CASE Test Circuit and Waveforms HGTP3N60A4D DIODE TA49369 VGE 90% 10% E0N2 EOFF
Fairchild Semiconductor
Original
N-Channel mosfet 400v 25A

3n60a4d

Abstract: HGT1S3N60A4DS development type TA49327. The diode used in anti-parallel is the development type TA49369. This IGBT is , THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms HGTP3N60A4D DIODE TA49369 VGE 90
Intersil
Original
3n60 ISO9000

3N60A4

Abstract: HGTP3N60A4 Waveforms HGTP3N60A4D DIODE TA49369 VGE 90% 10% EON2 EOFF L = 1mH ICE RG = 50 ICE 90
Fairchild Semiconductor
Original
HGTD3N60A4S HGTP3N60A4 TB334 45A-150 LD26

3N60A4

Abstract: HGTD3N60A4S HGTP3N60A4D DIODE TA49369 VGE 90% 10% EON2 EOFF L = 1mH ICE RG = 50 ICE 90% DUT VCE
Fairchild Semiconductor
Original
HGT1S3N60A4S HGT1S3N60A4S9A transistor equivalent 3N60A4

3n60a4

Abstract: 3N60 TA49369 VGE 90% 10% EON2 EOFF L = 1mH ICE RG = 50 ICE 90% DUT VCE + - 10
Fairchild Semiconductor
Original

3N60A4

Abstract: HGTD3N60A4S Test Circuit and Waveforms HGTP3N60A4D DIODE TA49369 VGE 90% 10% EON2 EOFF L = 1mH ICE
Intersil
Original