HGTG10N120BND TA49290 TA49189 TA49302 10N120BND IC110

Data Sheet January 2000 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch

HGTG10N120BND HGTG10N120BND Data Sheet January 2000 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49290 TA49290. The Diode used is the development type TA49189 TA49189. File Number 4579.3 Features · 35A, 1200V, TC = 25oC · 1200V Switching SOA Capability · Typical Fall Time. . . . . . . . . . . . . . . . .140ns at TJ = 150oC · Short Circuit Rating · Low Conduction Loss Packaging JEDEC STYLE TO-247 The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. E C G Formerly Developmental Type TA49302 TA49302. Ordering Information PART NUMBER HGTG10N120BND HGTG10N120BND PACKAGE TO-247 BRAND 10N120BND 10N120BND NOTE: When ordering, use the entire part number. Symbol G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 ©2001 Fairchild Semiconductor Corporation 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 HGTG10N120BND HGTG10N120BND Rev. A HGTG10N120BND HGTG10N120BND Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG10N120BND HGTG10N120BND 1200 UNITS V 35 17 A A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 80 ±20 ±30 55A at 1200V 298 A V V W Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 12V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 2.38 -55 to 150 260 8 15 W/oC oC oC µs µs Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 IC110 CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 840V, TJ = 125oC, RG = 10. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage SYMBOL BVCES ICES VCE(SAT) VGE(TH) TEST CONDITIONS VCE = BVCES IC = 10A, VGE = 15V TC = 25oC TC = 125oC TC = 150oC TC = 25oC TC = 150oC IC = 90µA, VCE = VGE TYP MAX UNITS 1200 - - V - - 250 µA - 170 - µA - - 2.5 mA - 2.45 2.7 V - 3.7 4.2 V 6.0 6.8 - V - IC = 250µA, VGE = 0V MIN - ±250 nA 55 - - A Gate to Emitter Leakage Current IGES VGE = ±20V Switching SOA SSOA TJ = 150oC, RG = 10, VGE = 15V, L = 400µH, VCE(PK) = 1200V Gate to Emitter Plateau Voltage VGEP IC = 10A, VCE = 0.5 BVCES - 10.4 - V IC = 10A, VCE = 0.5 BVCES VGE = 15V - 100 120 nC VGE = 20V - 130 150 nC - 23 26 ns On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time QG(ON) td(ON)I trI td(OFF)I Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 3) EOFF ©2001 Fairchild Semiconductor Corporation IGBT and Diode at TJ = 25oC ICE = 10A VCE = 0.8 BVCES VGE = 15V RG = 10 L = 2mH Test Circuit (Figure 20) - 11 15 ns - 165 210 ns - 100 140 ns - 0.85 1.05 mJ - 0.8 1.0 mJ HGTG10N120BND HGTG10N120BND Rev. A HGTG10N120BND HGTG10N120BND Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 3) VEC MIN Diode Reverse Recovery Time trr UNITS 21 25 ns 11 15 ns - 190 250 ns - 140 200 ns - 1.75 2.3 mJ - 1.1 1.4 mJ - IEC = 10A MAX - L = 2mH Test Circuit (Figure 20) TYP - IGBT and Diode at TJ = 150oC ICE = 10A VCE = 0.8 BVCES VGE = 15V RG = 10 EOFF Diode Forward Voltage TEST CONDITIONS 2.55 3.2 V RJC - 57 70 ns - 32 40 ns IGBT - - 0.42 oC/W Diode Thermal Resistance Junction To Case IEC = 10A, dIEC/dt = 200A/µs IEC = 1A, dIEC/dt = 200A/µs - - 1.25 oC/W NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Unless Otherwise Specified ICE , DC COLLECTOR CURRENT (A) 35 VGE = 15V 30 25 20 15 10 5 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE ©2001 Fairchild Semiconductor Corporation 150 ICE , COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 60 50 TJ = 150oC, RG = 10, VG = 15V, L = 400µH 40 30 20 10 0 0 200 400 600 800 1000 1200 1400 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA HGTG10N120BND HGTG10N120BND Rev. A HGTG10N120BND HGTG10N120BND TJ = 150oC, RG = 10, L = 2mH, V CE = 960V 100 50 TC = 75oC, VGE = 15V, IDEAL DIODE fMAX1 = 0.05 / (td(OFF)I + td(ON)I) 10 fMAX2 = (PD - PC) / (EON + EOFF) TC PC = CONDUCTION DISSIPATION 75oC (DUTY FACTOR = 50%) 75oC 110oC RØJC = 0.42oC/W, SEE NOTES 110oC VGE 15V 12V 15V 12V 1 2 5 10 20 25 250 VCE = 840V, RG = 10, TJ = 125oC 200 20 tSC 15 150 10 100 5 12 ICE , COLLECTOR TO EMITTER CURRENT (A) DUTY CYCLE