NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: HGTG20N60C3D HGTG20N60C3D Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. The IGBT used is development type TA49178. The diode used in ... | Original |
8 pages, |
TA49178 TA49063 RHRP3060 LD26 HGTG20N60C3D g20n60 g20n60c3d TA49179 HGTG20N60C3D abstract |
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| Abstract: HGTG20N60C3D HGTG20N60C3D Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is development type TA49178. The diode used in ... | Original |
8 pages, |
TA49178 TA49063 RHRP3060 LD26 HGTG20N60C3D g20n60 g20n60c3d TA49179 HGTG20N60C3D abstract |
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| Abstract: Formerly developmental type TA49178. JEDEC STYLE TO-247 Ordering Information PART NUMBER E C ... | Original |
8 pages, |
TB334 HGTG20N60C3 HGTP20N60C3 igbt g20n60c3 RHRP3060 TA49178 HGTG20N60C3 equivalent HGT1S20N60C3S G20N60C3 HGT1S20N60C3S9A HGTG20N60C3 abstract |
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| Abstract: HGTG20N60C3D HGTG20N60C3D Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is development type TA49178. The diode used in ... | Original |
7 pages, |
TA49178 TA49063 RHRP3060 HGTG20N60C3D G20N60C3D TA49179 HGTG20N60C3D abstract |
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| Abstract: intelai I HGTG20N60C3D HGTG20N60C3D Data Sheet 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is development type TA49178. The diode used in anti-parallel ... | OCR Scan |
7 pages, |
C110 TA49178 TA49063 RHRP3060 G20N60C3 LG 631 HGTG20N60C3D transistor C110 LG 631 IC g20n60c3d TA49179 HGTG20N60C3D abstract |
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| Abstract: contactors. Formerly developmental type TA49178. Ordering Information PART NUMBER PACKAGE BRAND ... | OCR Scan |
7 pages, |
Transistor No C110 HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 RHRP3060 TA49178 TB334 G20N60 HGT1S20N60C3S9A transistor C110 G20N60C3 12V 1C/O relay relay 12v 1c/o TA49178 abstract |
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| Abstract: Formerly developmental type TA49178. JEDEC STYLE TO-247 Ordering Information PART NUMBER E C ... | Original |
7 pages, |
TB334 TA49178 HGTP20N60C3 HGTG20N60C3 HGT1S20N60C3S G20N60C3 HGT1S20N60C3S9A HGTG20N60C3 abstract |
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| Abstract: Surface Mount Components to PC Boards" Packaging Formerly developmental type TA49178. JEDEC ... | Original |
8 pages, |
TB334 TA49178 RHRP3060 HGTP20N60C3 HGTG20N60C3 HGT1S20N60C3S G20N60C3 HGT1S20N60C3S9A g20n60 HGTG20N60C3 abstract |
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| Abstract: 20N60A4 ur620c d15p05 75307D RHR15120 76107d DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS(ON) VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA MS-012AA (SO-8) MO-153AA MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 RF1K49093 - 12 2.5/3.5 - 0.050/0.130 Complementary N & P RF1K49092 RF1K49092 - 20 5.00 - 0.045@4.5V 0.077 Dual P - ITF87056DQT ITF87056DQT 20 ... | Original |
2688 pages, |
buz11 SPICE HRF3205 equivalent irf710 "spice model" Transistor 65e8 65e9 transistor SD MOSFET DRIVE DATASHEET 4468 8 PIN transistor 75307D 1-888-INTERSIL 1-888-INTERSIL abstract |
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