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T3D DIODE

Catalog Datasheet MFG & Type PDF Document Tags

T3D DIODE

Abstract: T3D 43 diode Timing Conditions Symbol THD TVCCD TV3rd T3P T3D TR TS TSD TH TVR TVE Description HCCD , 1091 TL T3D Line 1092 Line 1 H1 H2 Frame Timing for Vertical Binning by 2 V1 TL TV3rd V2 = V2E = V2O T3P Line 545 TL T3D Line 1 Line 546 H1 H2 , T3D TV3rd TL Interlaced Frame Timing - Field Integration Mode - Odd Field Readout V1 TL V2 = V2E = V2O T3P T3D TV3rd TL Figure 6 - Interlaced Frame Timing - Field
Kodak
Original

T3D DIODE

Abstract: T3D 45 diode Cathode General-Purpose General-Purpose General-Purpose General-Purpose General-Purpose Single Diode , SP RAGU E/ S E M IC O N D GROUP PACKAGE INFORMATION T3D D Ö513ÖS0 0003555 i ~ r - 9 J - , T3D D 0513050 0003053 0 PACK m u s INFORMATION t ~ - 9 / ~ < & o TO-236AB/STYLE CC
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T3D+36+diode

Abstract: diode. Place the diode from VSS to GND. To disable one of the output amplifiers connect VDD to GND, do , THD TVCCD TV3rd T3P T3D TR TS TSD TH TVR TVE Description Min Nom Max Unit , T3D Line 1092 Line 1 f H1 f H2 Frame Timing for Vertical Binning by 2 f V1 TL TV3rd f V2 = f V2E = f V2O T3P Line 545 TL T3D Line 546 Line 1 f H1 f H2 , Even Field Readout fV1 TL fV2 = fV2E = fV2O T3P T3D TV3rd TL Interlaced Frame
Kodak
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t3d diode

Abstract: KAI-2093M possible. The voltage on VSS may be set by using the 0.6 to 0.7 volt drop across a diode. Place the diode , THD TVCCD TV3rd T3P T3D TR TS TSD TH TVR TVE Description HCCD Delay VCCD Transfer time Photodiode , Progressive Frame Timing V1 TL V2 = V2E = V2O Line 1091 H1 H2 Line 1092 TV3rd TL T3P T3D Line 1 , Frame Timing TV3rd TL T3P Line 546 T3D Line 1 ©Eastman Kodak Company, 2007 , Even Field Readout V1 TL V2 = V2E = V2O T3P TV3rd T3D TL Interlaced Frame Timing - Field
Kodak
Original

T3D 75 diode

Abstract: T3D DIODE SPRAGUE/SEMICOND GROUP 8 5 1 4 0 1 9 SPRAGUE. ^3 D â  ÃS13ÃS0 S E M I C O N D S / ICS G003bn 3 â  93D 03619 H fö f-O S DIODE CHIPS â'˜THDâ'™ Photodiodes , N/P Diode Diode Diode Diode Diode 3.0 3.0 5.0 5.0 5.0 120 100 100 80 100 N/P Diode Schottky Schottky Schottky Schottky 5.0 1.0 1.0 3.0 3.0 80 40 40 60 60 3-64 , BGA BGA SPRAGUE/SEMICOND GROUP T3D D â  Ã"513Ã"S0 0 003 05 8 T â  / ^ 9 PACKAGE
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T3D DIODE

Abstract: T3D DIODE clamp diode. Place the diode from VSS to GND. To disable one of the output amplifiers connect VDD to GND, do , THD TVCCD TV3rd T3P T3D TR TS TSD TH TVR TVE Description Min Nom Max Unit , f V1 TL TV3rd f V2 = f V2E = f V2O T3P Line 1091 TL T3D Line 1092 Line 1 , T3P Line 545 TL T3D Line 546 Line 1 f H1 f H2 Figure 9: Progressive Frame Timing , = fV2O T3P T3D TV3rd TL Interlaced Frame Timing - Field Integration Mode - Odd Field
Kodak
Original

T3D 46 diode

Abstract: Diode T3D 56 SIEMENS BYP 300 Preliminary data FRED Diode â'¢ Fast recovery epitaxial diode â'¢ Soft recovery characteristics Type Vrrm ^FR S M irr Package Ordering Code BYP 300 1200V 6.5A 55ns TO-218AD C67047-A2250-A2 Maximum Ratings Parameter Symbol Mean forward current Values Unit A /fa v rc = 9 0°C ,D =0.5 4 RMS forward current 6.5 /fr m s , - 40/150 / 56 1346 â  Ã›235L.0 5 0005105 °C 09.96 T3D â  . SIEMENS
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T3D 46 diode Diode T3D 56 T3D 65 diode Diode T3D 08 t3d 56 T3D 49 diode
Abstract: as possible. The voltage on VSS may be set by using the 0.6 to 0.7 volt drop across a diode. Place the diode from VSS to GND. To disable one of the output amplifiers connect VDD to GND, do not let VDD , VCCD Pedestal time 20.0 25.0 50.0 μs T3D VCCD Delay 15.0 20.0 100.0 μs , TV3rd f V2 = f V2E = f V2O T3P Line 1091 TL T3D Line 1092 Line 1 f H1 f H2 , TL T3D Line 546 Line 1 f H1 f H2 Figure 9: Progressive Frame Timing ON Semiconductor
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KAI-2093 PS-0026 D263T

DIODE T3D 95

Abstract: t3d diode on VSS may be set by using the 0.6 to 0.7 volt drop across a diode. Place the diode from VSS to GND , KAI-2093 Image Sensor Timing REQUIREMENTS AND CHARACTERISTICS Symbol THD TVCCD TV3rd T3P T3D TR , Timing f V1 TL f V2 = f V2E = f V2O Line 1091 f H1 f H2 Line 1092 TV3rd TL T3P T3D Line 1 , TV3rd TL T3P T3D Line 1 Figure 9: Progressive Frame Timing www.truesenseimaging.com , Readout fV1 TL fV2 = fV2E = fV2O T3P TV3rd T3D TL Interlaced Frame Timing - Field Integration Mode
TRUESENSE Imaging
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DIODE T3D 95 t3d diode T3D 34 diode T3D 01 DIODE kai-2093cm T3D 28 DIODE

T3D diode

Abstract: T3D 55 diode ) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS 's Maximum Continuous Drain-Source Diode Forward Current 2.5 A Vso Drain-Source Diode Forward , b501130 â¡â¡400'ìS T3D This Material Copyrighted By Its Respective Manufacturer m L501130 0040DTbi , 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (VI Figure 8. Body Diode Forward Voltage
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NDT451N T3D 55 diode T3D 45 diode Diode T3D 55 T3D 43 diode diode T3D Diode T3D 30 LS01130 0040CH3

T3D 54 DIODE

Abstract: Diode T3D 24 005DHS5 3 BUK453-100A BUK453-100B PowerMOS transistor L T-39-]] ^ REVERSE DIODE RATINGS , charge Iqr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode , is t3d c t 3D tin L/C)U.s ire tin c j n 'e i It . ID% = 1C)0â'¢Id* Id 25 C := / (Tmb/>; , . Typical reverse diode current. IF = f(Vsps): conditions: VG 0 V; parameter T( S= â'" WS % DS 1 0
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T3D 54 DIODE Diode T3D 24 T3D 77 diode T3D 75 diode Diode T3D 54 T3D+54+DIODE SBT31 BUK453-1OOB BUK453 ONJ25

T3D DIODE

Abstract: T3D 65 diode 15 30 td(o«) Turn-off Delay Time 52 78 lf Fall Time 18 36 SOURCE-DRAIN DIODE RATINGS , Continuous Source Current (Body Diode) SML801R2CN / SML751R2CN 7.0 Amps SML801R4CN / SML751R4CN 6.5 'SM Pulsed Source Current © (Body Diode) SML801R2CN / SML751R2CN 28 SML801R4CN / SML751R4CN 26 ^SD Diode Forward Voltage © (VQS - OV, ls - -lâ'ž [Cont.]) 1.3 Volts Irr Reverse , , JUNCTION-TO-CASE va PULSE DURATION 128 SEMELAB PLC bOE » 0133187 00GDÃ24 T3D «SIILB SML801R2/751R2/801R4
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t3d 68 diode T3D 36 diode T3D 89 DIODE Diode T3D 03 T3D 78 diode Diode T3D 26 DD0D622 751R2CN 801R2CN 751R4GCN 801R4CN SML801R
Abstract: SPRAGUE/SEMICOND GROUP 85 14 0 19 SPRAGUE. T3 D â  0513050 ÃDQ3blô 1 â  S E M I C O N D S / ICS 9 3 D 036 18j> ) " 0 I " ^ DIODE CHIPS â'˜THDâ'™ Rectifiers and General-Purpose Diodes ELECTRICAL CHARACTERISTICS atTA = 25°C vF Device Type THD457 THD458A THD459 THD459A THD462 THD485 THD485B THD550 THD645 THD914 THD914A THD914B THD914NG THD3070 THD3595 , BKD I SPRAGUE/SEMICOND GROUP T3D D â  Ã"513Ã"S0 0003058 T â 9 / ^ PACKAGE -
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THD3600 THD3600NG THD4001 THD4002 THD4003 THD4004

Diode T3D 82

Abstract: T3D DIODE =2)pF 15 150 15 15 300 300 T3D T3D TSD TSD T3D TSD MHz ns MHz MHz ns ns dB ns % dB nVS %/% Vq = 1.6 V , maximum ratings should be protected by Schott) y diode clamps (HP5082-2835) from input pin to the supplies
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Diode T3D 82 T3D 82 diode Diode T3D 27 T3D 82 T3D 40 DIODE M3-7643 MF7643 P7643 MP7643

T3D DIODE 29

Abstract: T3D 55 diode DC Output Voltage -0.5 to Vcc + 0.5 V IlK DC Input Diode Current ±20 mA lOK DC Output Diode Current ±20 mA lo DC Output Current ±5 0 mA Vcc Vi  , -L P013L 6/7 SGS-mOMSON 7=12^237 ⡠⡠7 7 T 2 3 T3D
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T3D DIODE 29 Diode T3D 44 74AC245 74AC245M AC245 SC08570 0077T21 SC08560

T3D zener DIODE

Abstract: T3D 63 ZENER DIODE SP RA GUE /S EMIC OND GROUP =13 D Ô513Ô5D 0D03bE2 3 8 5 14 01 9 SPRAGUE. S E M I C O N D S / ICS 93D 03622 p T '/S-C S DIODE CHIPS `THZ' Series `B' Zener Diodes ELECTRICAL CHARACTERISTICS atTfl = 25°C Zener Voltage Device Type Min. (V) Norn. (V) Max. (V) 1.89 1.98 2.10 , ~//-05 DIODE CHIPS `THZ' Series `B' Zener Diodes ELECTRICAL CHARACTERISTICS atTA = 25°C Zener , for special selections 3-68 SPRAGUE/SEMICOND GROUP PACKAGE INFORMATION T3D D Ô513ÔS0
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T3D zener DIODE T3D 63 ZENER DIODE ZENER DIODE T3D T3D zener T3D 87 T3D 47 diode THZ036B05 THZ036B10 THZ039B05 THZ039B10 THZ043B05 THZ043B10

Diode T3D 64

Abstract: T3D zener DIODE T3D 25 SPRAGUE/SEMICOND GROUP 13 D ÔS13ÔSG 00D3b2S 1 Ô S 1 4 0 1 9 SPRAGUE. S E M I C O N D S / ICS 93D 03625 iTT-Z^S DIODE CHIPS `THZ' Temperature-Compensated Zener Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C vz Device Type THZ821 THZ821A THZ823 THZ823A THZ825 THZ825A THZ827 THZ827A THZ4565 THZ4565A THZ4566 THZ4566A THZ4567 THZ4567A THZ4568 THZ4568A THZ4570 , PACKAGE INFORMATION T3D D Ô513ÔS0 0003058 T 9 / ^ 2 0 SEMICONDUCTOR CHIP PACKAGING
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Diode T3D 64 T3D zener DIODE T3D 25 T3D 62 t3d 62 diode diode zener t3d 25 T3D 64 THZ4570A THZ4571 THZ4571A THZ4572 THZ4572A THZ4573

T3D 54 DIODE

Abstract: Diode T3D 54 UESTCODE SEMICONDUCTORS T3D D â  TTQTTSS OODiaflT 1 â  Y^S^-^S WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single ended electrode construction is used to greatly simplify mounting. A wide variety of devices are , ) â'¢C/Wma* Outline Drawing ScrewTorque Terminal Mount Kg.cm Transistor Diode 2.6 3.5 2.0
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T3D 81 DIODE T3D 83 DIODE diode T3D 25 Diode T3D 41 CIRCUIT MG300M1UK1 T3D 18 diode MG15N2YK1 MG25M2YK1 MG25N2YK1

T3D 35 zener DIODE

Abstract: T3D zener DIODE SPR AGU E/SENIC OND GROUP 8 5 1 4 0 1 9 SPRAGUE. 13 D 0513050 0003b54 7 S E M I C O N D S /ICS 93D 0 3624 I DIODE CHIPS T H Z ' S eries `W Zener Diodes Zener Voltage Leakage Current Zener Impedance Max. Z^y (O) 5.0 5.0 2.0 2.0 3.5 3.5 4.0 4.0 4.5 4.5 5.0 5.0 7.0 7.0 8.0 8.0 9.0 9.0 10 10 14 14 16 16 20 20 22 22 23 23 25 25 35 35 40 40 45 45 50 50 60 60 70 70 80 80 95 95 , SPRAGUE/SEMICOND GROUP PACKAGE INFORMATION T3D D Ô513ÔS0 0003058 T 9 /^ 2 0 SEMICONDUCTOR
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T3D 35 zener DIODE t3d 99 diode diode zener t3d 23 T3D 91 T3D 76 THZ5R6W05 THZ5R6W10 THZ6R2W05 THZ6R2W10 THZ6R8W05 THZ6R8W10

Diode T3D 27

Abstract: T3D 55 diode 2 §} g ND 2^2A 7 -t^= ~t^3D- ! S £ . 26j2A8 25l2G 288 [23 2DIR (24' (Top view) 630 HD74U¥C16245 Absolute Maximum Ratings Item Supply voltage Input diode current Input voltage Output diode
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T3D 85 diode T3D 27 diode t3d 32 diode HD74LVC16245----16- HD74LVC16245
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