NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: TMPD6050 TMPD6050 Single Diode 5A 600 70 1.1 100 0.10 10 2.5 TSB TMPD6100 TMPD6100 Common Cathode 5B 500 70 1.1 100 0.10 15 , . . -U- . B . SPRAGUE/SEMICOND GROUP T3D D â- fiS13aSQ Q0D3Ã"SQ S â- -J-^J-JC PACKAGE INFORMATION , circuit elements. 7-19 3055 A-12 SPRAGUE/SEP1IC0ND GROUP PACKAGE INFORMATION T3D D â- flSIBflSD 0003552 ... | OCR Scan |
5 pages, |
TMPD4448 TMPD459 TMPD6050 T3D 34 T3D 40 DIODE Diode T3D 30 diode marking 62 t3d 238BMM TMPD4148 T3D 89 DIODE diode marking t3d T3D 67 diode T3D 5d DIODE Diode T3D 35 datasheet abstract |
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| Abstract: AC Timing Conditions Symbol THD TVCCD TV3rd T3P T3D TR TS TSD TH TVR TVE Description , T3P Line 1091 TL T3D Line 1092 Line 1 H1 H2 Frame Timing for Vertical Binning by 2 V1 TL TV3rd V2 = V2E = V2O T3P Line 545 TL T3D Line 1 Line 546 , V2 = V2E = V2O T3P T3D TV3rd TL Interlaced Frame Timing - Field Integration Mode - Odd Field Readout V1 TL V2 = V2E = V2O T3P T3D TV3rd TL Figure 6 - Interlaced ... | Original |
24 pages, |
T3D 01 DIODE KAI-2093 Diode T3D 55 T3D 40 DIODE T3D 21 diode T3D DIODE clamp Diode T3D 41 CIRCUIT t3d 72 T3D DIODE 43 T3D 55 diode T3D 36 diode KAI-2093M T3D 48 KAI-2093M abstract |
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| Abstract: DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS 's Maximum Continuous Drain-Source Diode Forward Current 2.5 A Vso Drain-Source Diode Forward Voltage VGS = 0 V, ls= 5.5 A (Note 2) 0.8 1.2 V Notes , Test: Pulse Width < 300ps, Duty Cycle < 2.0%. 5-28 b501130 â-¡â-¡400'ìS T3D This Material Copyrighted By , DIODE FORWARD VOLTAGE (VI Figure 8. Body Diode Forward Voltage Variation with Current and Temperature ... | OCR Scan |
6 pages, |
T3D DIODE 43 DIODE T3D 95 NDT451N T3D 42 t3d 9d T3D 21 diode diode T3D T3D 45 diode T3D 43 diode Diode T3D 55 T3D 65 diode T3D 55 diode T3D diode NDT451N abstract |
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| Abstract: 18 36 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT 's Continuous Source Current (Body Diode) SML801R2CN SML801R2CN / SML751R2CN SML751R2CN 7.0 Amps SML801R4CN SML801R4CN / SML751R4CN SML751R4CN 6.5 'SM Pulsed Source Current © (Body Diode) SML801R2CN SML801R2CN / SML751R2CN SML751R2CN 28 SML801R4CN SML801R4CN / SML751R4CN SML751R4CN 26 ^SD Diode Forward Voltage © (VQS - OV, ls - -l„ [Cont. , T3D «SIILB SML801R2/751R2/801R4/751R4CN SML801R2/751R2/801R4/751R4CN I I I I -vg S=5- 5v,6 v&1 ov -w ... | OCR Scan |
4 pages, |
TO-254AA Package LE17 SML751R2CN SML751R4CN SML801R2CN SML801R4CN 65A 750V diode T3D 40 DIODE T3D 34 diode Diode T3D 24 T3D 55 diode t3d 68 diode T3D DIODE T3D 65 diode DD0D622 DD0D622 abstract |
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| Abstract: free as possible. The voltage on VSS may be set by using the 0.6 to 0.7 volt drop across a diode. Place the diode from VSS to GND. To disable one of the output amplifiers connect VDD to GND, do not , TV3rd T3P T3D TR TS TSD TH TVR TVE Description Min Nom Max Unit HCCD Delay , f V2 = f V2E = f V2O T3P Line 1091 TL T3D Line 1092 Line 1 f H1 f H2 Frame , T3D Line 546 Line 1 f H1 f H2 Figure 9: Progressive Frame Timing ©Eastman Kodak Company ... | Original |
36 pages, |
diode marking t3d KAI-2093-CBA T3D 32 T3D 34 T3D 45 diode T3D 48 T3D 34 diode kai-2093cm Diode T3D 55 T3D 55 diode Diode T3D 44 KAI-2093 diode T3D T3D DIODE clamp MTD/PS-0307 KAI-2093 MTD/PS-0307 abstract |
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| Abstract: (0.545) 13.SM.US) T3D J yt-m (0.045) - 035) |n| * 0.50 I0.020XR 020XR c A®|B| |®| « 0.25 (0.010) ® c , Peak Diode Recovery dv/dt (3) 35 V/ns tj Tsra Operating Junction Storage Temperature Range -55 to , GGITMEI 53G 1-358 IRFM450 IRFM450, JANTXV-, JANTX-, 2N7228 2N7228 Devices Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units lest Conditions Is Continuous Source Current (Body Diode) - - , Pulsed Source Current (Body Diode) © - - 48 1 1 > VSD Diode Forward Voltage - - 1.7 V Tj - 25°C, Is - ... | OCR Scan |
8 pages, |
t3d diode type 2N7228 2N7228 JANTX 2N7228 JANTX mosfet data sheet Diode T3D 55 dt t3d 13 I-364 IRFM450 2n7226 T3D 65 diode T3D 78 diode T3D 40 DIODE T3D 53 diode IRFM450 abstract |
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| Abstract: ms tpHL Turn - off Delay Time 0.5 V, to 0.5 V0 1.5 us Ir Clamp Diode Leakage Current for ULN2064B ULN2064B - ULN2066B ULN2066B VR = 80 V VR = 80 V Tamb = 70 °C 50 100 MA HA 6 Vf Clamp Diode Forward Voltage IF - , Clamp Diode Leakage Current for ULN2068B ULN2068B - ULN2070B ULN2070B VR = 50 V Vn = 50 V Tamb = 70 °C 50 100 HA MA 6 Vf Clamp Diode Forward Voltage 1F = 1 >A lF = 1.5 A 1.75 2 V V 7 SCHEMATIC DIAGRAM 17.2 K il , CIRCUITS Figure 1. Figure 3. Figure 2. Figuré 4. OPEN o I 1 7^2^23? 00532«^ T3D 5/8 837 This ... | OCR Scan |
8 pages, |
ULN2076B ULN20648 ULN2064B ULN2066B ULN2068B ULN2070B ULN2074B LC125A T3D 4N diode T3D 45 diode T3D DIODE T3D DIODE clamp ULN2064B abstract |
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| Abstract: 13.84(0.5451 OCT T3D 1.14 (0.045) 0.89 (0.035) IJ « 0.50 (0.0201(E) C A®|B| l'I »0.25 (0.0101® C , Repetitive Avalanche Energy 0 15 (See Fig. 13) mJ dWdt Peak Diode Recovery dv/dt ® 40 (See Fig. 13) V/ns , , JANTXV-, JAN TX-, 2N7227 2N7227 Devices Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions Is Continuous Source Current (Body Diode) - - 14 A Modified MOSFET symbol showing the integral --, Reveres p-n junction rectifier. A|- i0 1 'SM Pulsed Source Current (Body Diode ... | OCR Scan |
8 pages, |
T3D rectifier 334 3150 mosfet dt t3d 13 T3D 83 DIODE vr 320l IRFM350 JANTXV2N7227 T3D 87 T3D 53 diode 2N7227 T3D DIODE Diode T3D 56 IRFM35Q MIL-S-1S500/592 IRFM35Q abstract |
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| Abstract: N AMER PHILIPS/DISCRETE b«ÌE d â- bbSB'm 0D307flS T3D â- APX Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B BUK552-100A/B Logic level FET_ GENERAL DESCRIPTION N-channei enhancement , source bond pad - 3.5 4.5 7.5 - nH nH nH REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tmb = 25 "C , Continuous reverse drain current Pulsed reverse drain current Diode forward voltage lF= 10 A ;VGS = 0 V - 1.2 , ); conditions: lD= 10 A is 10 5 0 - 0 1 2 VSDS/V Fig. 14. Typical reverse diode current. IF = f(VSDs ... | OCR Scan |
5 pages, |
T0220AB dt t3d 13 Diode T3D 55 BUK552-100B BUK552-100A BUK552 T3D 55 diode T3D 45 diode T3D DIODE BUK552-100A/B -100A -100B BUK552-100A/B abstract |
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| Abstract: DD4üb73 T3D Epitaxial avalanche diodes IPHIN BYV28 BYV28 SERIES Philips international sbE » 4 CHARACTERISTICS Tj , Typical values diode capacitance at f = 1 MHz. Tr = 25 °C. November 1988 663 Printed From CAPS XPert ... | OCR Scan |
5 pages, |
663 t03 BYV28 BYV28-50 T3D 40 DIODE diode t3d Rectifier t3d T3D 28 diode Diode T3D 03 T3D 89 DIODE T3D 55 diode T3D 65 diode Diode T3D 64 t3d diode BYV28 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| NP1100GA/D NP1100GA/D NP1100GA/D NP1100GA/D (63.0kB) 0 100 Data Sheet MMT08B310T3/D (58 3 DATASHEET MMT08B260T3/D (59.0kB) 3 100 MMT08B350T MMT08B350T MMT08B350T MMT08B350T DATA SHEET MMT08B350T3/D (57.0kB) 1 100 NP Series 260V Thyristor Surge Protectors MMT10B350T3/D (57.0kB) 2 100 Thyristor Surge Protectors MMT10B230T3/D (60.0kB) 8 100 www.datasheetarchive.com/files/on-semiconductor/taxonomy/circuitprotection.htm |
On Semiconductor | 28/09/2007 | 28.53 Kb | HTM | circuitprotection.htm |
| MBRA340T3/D (53.0kB) 4 100 MBRS3201 MBRS3201 MBRS3201 MBRS3201 Datasheet MBRS3201/D MBRS3201/D MBRS3201/D MBRS3201/D (58.0kB) 2 100 MBRS4201T3 MBRS4201T3 MBRS4201T3 MBRS4201T3 DATASHEET MBRS4201T3/D (55.0kB) 3 100 MBRS540T3 MBRS540T3 MBRS540T3 MBRS540T3 MBRS540T3/D (65.0kB) 5 100 Power Rectifier MBRS1100T3/D (48.0kB) 9 100 Schottky Power Mount Schottky Power Rectifier MBRS3100T3/D (39.0kB) 2 100 www.datasheetarchive.com/files/on-semiconductor/taxonomy/diodes.htm |
On Semiconductor | 28/09/2007 | 80.98 Kb | HTM | diodes.htm |
| D1 T2 T5 D4 IL D2 T3 D3 D6 T6 D5 M 1/3 Fig. 2 : Current waveform in T1, D1, T4 ,D4 When a complementary freewheel diode D4, whereas the negative sinusoidal part is built with T4 and D1 (Fig.2). Switching losses (Turn-ON and Turn-OFF) in the diode are negligible with regard to conduction losses. The average current in the diode can be estimated by making the hypothesis (with a big safety margine) that the current in the diode is a half sine wave (Fig.2). This hypothesis is valid when the www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4941-v1.htm |
STMicroelectronics | 02/04/1999 | 4.89 Kb | HTM | 4941-v1.htm |
| for a 1kVA motor). Va T1 IT1 T4 IT4 ID4 ID1 D1 T2 T5 D4 IL D2 T3 D3 current IL is built with the commutation of T1 and the complementary freewheel diode D4 -ON and Turn-OFF) in the diode are negligible with regard to conduction losses. The average current in the diode can be estimated by making the hypothesis (with a big safety margine) that the current in the diode is a half sine wave (Fig.2). This hypothesis is valid when the motor www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4941-v3.htm |
STMicroelectronics | 25/05/2000 | 6.68 Kb | HTM | 4941-v3.htm |
| D1 T2 T5 D4 IL D2 T3 D3 D6 T6 D5 M 1/3 Fig. 2 : Current waveform in T1, D1, T4 ,D4 When a complementary freewheel diode D4, whereas the negative sinusoidal part is built with T4 and D1 (Fig.2). Switching losses (Turn-ON and Turn-OFF) in the diode are negligible with regard to conduction losses. The average current in the diode can be estimated by making the hypothesis (with a big safety margine) that the current in the diode is a half sine wave (Fig.2). This hypothesis is valid when the www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4941-v2.htm |
STMicroelectronics | 14/06/1999 | 4.85 Kb | HTM | 4941-v2.htm |
| kVA motor). Va T1 IT1 T4 IT4 ID4 ID1 D1 T2 T5 D4 IL D2 T3 D3 D6 T6 D5 M 1 complementary freewheel diode D4, whereas the negative sinusoidal part is built with T4 and D1 (Fig.2). Switching losses (Turn-ON and Turn-OFF) in the diode are negligible with regard to conduction losses. The average current in the diode can be estimated by making the hypothesis (with a big safety margine) that the current in the diode is a half sine wave (Fig.2). This hypothesis is valid www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4941.htm |
STMicroelectronics | 20/10/2000 | 6.91 Kb | HTM | 4941.htm |
| Protection P6SMB6.8T3/D 600 W Surface Mount (SMC) for TVS 1.5SMC6.8T3/D 1500 W Surface Mount (SMC) for Suppressors AN784/D AN784/D AN784/D AN784/D Rev. 1 (*) Transient Power Capability of Zener Diodes AN843/D AN843/D AN843/D AN843/D (*) A Review of www.datasheetarchive.com/files/motorola/design-n/ospd/tvs-zene.htm |
Motorola | 25/11/1996 | 7.06 Kb | HTM | tvs-zene.htm |
| Host Bridge st 3D Sound Card MPEG Video Capture Card i t 3D Graphics Card i s100 MbitEthernet it t t st PCI Local Bus l SCSI Controller I t ll MPEG Video Capture Card i t 3D Sound Card 100 Mbit MPEG Video Capture Card i t 3D Sound Card 100 Mbit Ethernet it t t Expansion Bus Bridge si s 3D Diodes #1; Clamp diodes protect inputs from momentary short- circuit current caused by tri-stating delays VCC = 3.3V PCI Bus Chip InputChip Output Bad Diode Clamping Why Must Universal Cards Clamp to 5V? #1; A www.datasheetarchive.com/download/2748275-967763ZC/rp02a4d.zip (pci_cust_tutorial.pdf) |
Xilinx | 22/02/2000 | 922.75 Kb | ZIP | rp02a4d.zip |
| NTF6P02T3 NTF6P02T3 NTF6P02T3 NTF6P02T3 NTF6P02T3/D (92.0kB) 2 100 NTJD2152P NTJD2152P NTJD2152P NTJD2152P Trench B) 6 100 Power MOSFET 5.2 Amps, 30 Volts NTF5P03T3/D (76.0k FETKY Power MOSFET and Schottky Diode -20 V, -3.3 A P-Channel w/20V 1.0 A Schottky Diode NTTD4401 NTTD4401 NTTD4401 NTTD4401 MOSFET and Schottky Diode Dual SO-8 Package NTMSD3P303R2/D NTMSD3P303R2/D NTMSD3P303R2/D NTMSD3P303R2/D (202.0kB) 2 100 FETKYâ„¢ Power MOSFET and Schottky Diode Dual SO-8 Package NTMSD2P102LR2/D NTMSD2P102LR2/D NTMSD2P102LR2/D NTMSD2P102LR2/D (95.0kB) 3 www.datasheetarchive.com/files/on-semiconductor/taxonomy/fets.htm |
On Semiconductor | 27/09/2007 | 87.91 Kb | HTM | fets.htm |
| 100 General Purpose Transistors MMBT2132T3/D (59.0kB) 1 Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network MJE Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network BUL www.datasheetarchive.com/files/on-semiconductor/taxonomy/bipolartransistors.htm |
On Semiconductor | 28/09/2007 | 122.37 Kb | HTM | bipolartransistors.htm |