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Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612DP Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

T3D 84 diode

Catalog Datasheet MFG & Type PDF Document Tags

T3D 29 zener DIODE

Abstract: diode zener t3d 23 DIODE CHIPS / `THZ' Series `A ' Zener Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C Zener , 5.7 6.5 6.2 6.5 6.2 7.0 6.7 8.0 7.6 8.4 8.0 9.1 8.7 9.9 9.4 10.0 9.5 11.0 Zener Impedance Max. Z^j (0 , =13 D 0513050 DGa3h21 1 9 3 D 03621 DIODE CHIPS T H Z ' Series A ' Zener Diodes , SPRAGUE/SEMICOND GROUP PACKAGE INFORMATION T3D D Ô513ÔS0 0003058 T 9 / ^ 2 0 SEMICONDUCTOR
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Abstract: ) 1.85(0.073) 2.16 (0.085) g.84 (0.340) D EEP REF. 2.44/2.41 X 2.79 (0.096/0.095 X 0.110) 2.16 , Waveforms As seen in the block diagram, each module contains a single Light Emitting Diode (LED) as its , ± 0.38 mm (0.015"). 2-42 44475Û4 OOl bOSf l T3D °e Notes Electrical -
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Abstract: V to +5 V NA -20 V UDN2585A/LW -45 V UDN2580A/LW , °C -0.2 â'" V Ir V R = 50 V, TA = 70â' C â'" 50 HA Clamp Diode Forward Voltage vF Ip = 350 mA â'" 2.0 V Input Capacitance CIN V IN(OFF) Clamp Diode Leakage , (OFF) IOUt = -1 0 0 h A ,T a = 70°C -0.4 â'" V Clamp Diode Leakage Current !r V R = 25 V, Ta = 70°C â'" 50 HA Clamp Diode Forward Voltage vF lF= 120 mA â -
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2580/85L 25S0/85A UDN2580A UDN2580LW UDN2585A UDN2585LW

T3D 46 diode

Abstract: Kodak Kai-4020m Through Photodiode and VCCD Phase 1 Photo diode p p+ n p p Light Shield V1 n p p p Cross Section Through , Transfer Top View V1 Photo diode Transfer Gate V2 V1 Fast Line Dump Lightshield not shown , image sensor. Put one diode D1 between the ESD and VSUB pins. Put one diode D2 on each pin that may , (K) T (C) 2.7 97 2.8 84 2.9 72 3.0 60 3.1 50 3.2 40 3.3 30 3.4 21 Figure
Kodak
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KAI-4020CM T3D 46 diode Kodak Kai-4020m Kodak KAI 2000 T3D 47 diode T3D 54 DIODE T3D 84 diode KAI-4020 KAI-4020M KAI-4010

KAI-4020M

Abstract: KAI-4020 VCCD Phase 1 Photo diode p p+ n Light Shield V1 n p p Light Shield Transfer Gate , Transfer Top View V1 Photo diode Transfer Gate V2 V1 Fast Line Dump V2 Lightshield , to protect the image sensor. Put one diode D1 between the ESD and VSUB pins. Put one diode D2 on , 2.9 3.0 3.1 3.2 3.3 3.4 T (C) 97 84 72 60 50 40 30 21
Kodak
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ccd KE DIODE SMR 4020 40MHZ HLMP-8115 NLPB500 NSPG500S

T3D 36 diode

Abstract: 1 Photo diode p p+ n Light Shield V1 p n p Light Shield Transfer Gate p , Transfer Top View V1 Photo diode Transfer Gate V2 V1 Fast Line Dump V2 Lightshield , these junctions then diodes D1 and D2 should be added to protect the image sensor. Put one diode D1 between the ESD and VSUB pins. Put one diode D2 on each pin that may forward bias the base-emitter , 3.4 T (C) 97 84 72 60 50 40 30 21 Figure 14 - Dark Current versus
Kodak
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T3D 36 diode KAI-4011 KAI-4011M KAI-4011CM

T3D 97 diode

Abstract: MARKING "V2H" DIODE 1 Photo diode p p+ n Light Shield p n p Light Shield Transfer Gate V1 p , HORIZONTAL TRANFER Top View Direction of Vertical Charge Transfer V1 Photo diode Transfer Gate , junctions then diodes D1 and D2 should be added to protect the image sensor. Put one diode D1 between the ESD and VSUB pins. Put one diode D2 on each pin that may forward bias the base-emitter junction. The , 1000/T(K) 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 T (C) 97 84 72 60
Kodak
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T3D 97 diode MARKING "V2H" DIODE Sn 4011 t3d diode type T3D DIODE Diode T3D 35 MTD/PS-0718

T3D 46 diode

Abstract: pg 4011CM p Cross Section Through Photodiode and VCCD Phase 1 Photo diode p p+ n p p Light Shield V1 n p , Photo diode Transfer Gate V2 V1 Fast Line Dump Lightshield not shown V2 H H2 1 S B H 2 , . Put one diode D1 between the ESD and VSUB pins. Put one diode D2 on each pin that may forward bias the
TRUESENSE Imaging
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pg 4011CM 4011M PS-00106 PS-0016 D263T

T3D 36 diode

Abstract: T3D 53 diode Section Through Photodiode and VCCD Phase 1 Photo diode p p+ n Light Shield p n p , Transfer V1 Photo diode Transfer Gate V2 V1 Fast Line Dump V2 Lightshield not , . Put one diode D1 between the ESD and VSUB pins. Put one diode D2 on each pin that may forward bias , ) 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 T (C) 97 84 72 60 50 40
Kodak
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T3D 53 diode MTD/PS-1062 KAI-04022 MTD/PS-0292
Abstract: 1 Photo diode p p+ n Light Shield V1 p n p Light Shield Transfer Gate p , Transfer Top View V1 Photo diode Transfer Gate V2 V1 Fast Line Dump V2 Lightshield , then diodes D1 and D2 should be added to protect the image sensor. Put one diode D1 between the ESD and VSUB pins. Put one diode D2 on each pin that may forward bias the base-emitter junction. The , 1 1000/T(K) 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 T (C) 97 84 72 Kodak
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KAI-04022

Abstract: Photodiode and VCCD Phase 1 Photo diode p p+ n p p Light Shield V1 n p p p Cross Section Through Photodiode , -1062 p8 VERTICAL TO HORIZONTAL TRANFER Top View V1 Photo diode Transfer Gate Direction of , . Put one diode D1 between the ESD and VSUB pins. Put one diode D2 on each pin that may forward bias the , 100 Photodiodes 10 1 1000/T(K) T (C) 2.7 97 2.8 84 2.9 72 3.0 60 3.1 50 3.2 40
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Abstract: 1 Photo diode p p+ n p p Light Shield V1 n p n Substrate n Substrate Cross Section Showing , View V1 Photo diode Transfer Gate Direction of Vertical Charge Transfer V2 V1 Fast Line , added to protect the image sensor. Put one diode D1 between the ESD and VSUB pins. Put one diode D2 on , Electrons/second VCCD 1000 100 Photodiodes 10 1 1000/T(K) T (C) 2.7 97 2.8 84 2.9 72 Kodak
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MTD/PS-0719 KAI-4021

KAI-4021M

Abstract: VCCD Phase 1 Photo diode p p+ n Light Shield V1 n p p Light Shield Transfer Gate , Transfer Top View V1 Photo diode Transfer Gate V2 V1 Fast Line Dump V2 Lightshield , then diodes D1 and D2 should be added to protect the image sensor. Put one diode D1 between the ESD and VSUB pins. Put one diode D2 on each pin that may forward bias the base-emitter junction. The , 1 1000/T(K) 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 T (C) 97 84 72
Kodak
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KAI-4021M KAI-4021CM

KAI-4021

Abstract: T3D 84 diode Photodiode and VCCD Phase 1 Photo diode p p+ n p p Light Shield V1 n p p p Cross Section Through Photodiode , -0719 p7 VERTICAL TO HORIZONTAL TRANFER Top View V1 Photo diode Transfer Gate Direction of , added to protect the image sensor. Put one diode D1 between the ESD and VSUB pins. Put one diode D2 on , Electrons/second VCCD 1000 100 Photodiodes 10 1 1000/T(K) T (C) 2.7 97 2.8 84 2.9 72
Kodak
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Kodak KAI-4021 Diode T3D 27 KAI4021M Diode T3D 64

T3D 46 DIODE

Abstract: Diode T3D 54 VCCD Phase 1 Photo diode p p+ n Light Shield V1 p n p Light Shield Transfer Gate , Transfer Top View V1 Photo diode Transfer Gate V2 V1 Fast Line Dump V2 Lightshield , to protect the image sensor. Put one diode D1 between the ESD and VSUB pins. Put one diode D2 on , 1 1000/T(K) 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 T (C) 97 84 72
Kodak
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KAI-4010M KAI-4010CM Diode T3D 54 T3D 53 DIODE T3D 95

KAI-4011

Abstract: CD 4011 Section Through Photodiode and VCCD Phase 1 Photo diode p p+ n Light Shield p n p , Transfer V1 Photo diode Transfer Gate V2 V1 Fast Line Dump V2 Lightshield not , D1 and D2 should be added to protect the image sensor. Put one diode D1 between the ESD and VSUB pins. Put one diode D2 on each pin that may forward bias the base-emitter junction. The diodes will , Photodiodes 10 1 1000/T(K) 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 T (C) 97 84
Kodak
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CD 4011 T3D 42 V2E MARKING DIODE cd 4011 be T3D 55 diode T3D 80 diode S-0718 MTD/PS-1197
Abstract: VCCD Phase 1 Photo diode p p+ n Light Shield V1 p n p Light Shield Transfer Gate , Transfer Top View V1 Photo diode Transfer Gate V2 V1 Fast Line Dump V2 Lightshield , then diodes D1 and D2 should be added to protect the image sensor. Put one diode D1 between the ESD and VSUB pins. Put one diode D2 on each pin that may forward bias the base-emitter junction. The , 1 1000/T(K) 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 T (C) 97 84 72 Kodak
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T3D zener DIODE

Abstract: T3D 15 zener DIODE (Output): Connect external RC network. bO ôôôn September 1997 C10DECH5 4-147 T3D , °C, VRT/CT = 2V 7.7 8.4 9.0 mA Reset Current ta = t min t0 t max 7.2 8.4 9.5 , MIC38C42/4, MIC38HC42/4 14.5 15.5 V 7.8 8.4 9.0 V MIC38C42/4, MIC38HC42/4 8 9 , , permanently damag­ ing the controllerâ'™s CMOS construction. To reduce tran­ The 100V Schottky diode D1 , accomplished using an ultra-fast-recovery diode. R1 and C2 suppress parasitic oscillations from D1. Using a
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T3D zener DIODE T3D 15 zener DIODE T3D 65 diode BM 3843 T3D 19 zener DIODE MIC38C/HC42/3/4/5 MIC38C4 MIC38HC4 MIC38C42 MIC38HC42 UC284

KAI-2020

Abstract: Diode T3D 57 Phase 2 at Transfer Gate Cross Section Through Photodiode and VCCD Phase 1 Photo diode p p+ n , of Vertical Charge Transfer V1 Photo diode Transfer Gate V2 V1 Fast Line Dump , image sensor. Put one diode D1 between the ESD and VSUB pins. Put one diode D2 on each pin that may , 3.1 3.2 3.3 3.4 T (C) 97 84 72 60 50 40 30 21 Figure 14: Dark
Kodak
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KAI-2020 Diode T3D 57 T3D 98 diode KAI-2020-ABA t3d 99 diode Nichia NSPG500S MTD/PS-0692
Abstract: diode p Light Shield p+ n p n p Light Shield Transfer Gate V1 p V2 p+ n , Charge Transfer Top View V1 Photo diode Transfer Gate V2 V1 Fast Line Dump V2 , these junctions then diodes D1 and D2 should be added to protect the image sensor. Put one diode D1 between the ESD and VSUB pins. Put one diode D2 on each pin that may forward bias the base-emitter ON Semiconductor
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PS-0017
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