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Part Manufacturer Description Datasheet BUY
CDB4352 Cirrus Logic Evaluation, Design Tools Eval Bd 192kHz DAC w/LD visit Digikey
WM8255SEFL Cirrus Logic IC 12MSPS 16 BIT AFE WITH LED DR visit Digikey
WM8255SEFL/R Cirrus Logic IC 12MSPS 16 BIT AFE WITH LED DR visit Digikey

T3D+46+diode

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SIEMENS BYP 300 Preliminary data FRED Diode â'¢ Fast recovery epitaxial diode â'¢ Soft recovery characteristics Type Vrrm ^FR S M irr Package Ordering Code BYP 300 1200V 6.5A 55ns TO-218AD C67047-A2250-A2 Maximum Ratings Parameter Symbol Mean forward current Values Unit A /fa v rc = 9 0°C ,D =0.5 4 RMS forward current 6.5 /fr m s , , chip case ñ thJC -
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T3D 46 diode Diode T3D 56 T3D 65 diode Diode T3D 08 Diode T3D 38 T3D 49 diode
Abstract: may be set by using the 0.6 to 0.7 volt drop across a diode. Place the diode from VSS to GND. To Kodak
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T3D DIODE T3D 43 diode T3D 36 diode T3D 28 DIODE Diode T3D 24 T3D 34 diode KAI-2093M 2093M
Abstract: Sialic Pressure-Inch-Hi) Static Piessure-Inch-Hi) A1555H23S A1555H23B-C A1555H23B A1555H11S A1555H11B-C A1555H11B Listed Model Sleeve ro è Sleeve Od £ cd Bearing to o vl VDC o » g" f 0.022/0.020 o io CD à io to 0.40 0.60 0.35/0.40 0.60 1 S » I i 3. ~ 47/41 46/50 47/41 47/41 46/50 47/41 1 Rated Power to ol ol o to co vl o to -j CD o to cti o to co vl o to -j o CD so Speed Co o CD o Cò ijj CD CD C5 o o C5 o o o C5 u> CD CD C5 o o S 1â'". vi vi to vi 00 ctl o 1â'". vi vi to vi 00 cti CD n -
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T3D 47
Abstract: 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 , 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 , FG A connecti on) 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 , S V _B U R S T 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 , 4_P o D 6_P o D 8_P o FR A M E_V A LI _N o D O O O O O O 41 42 43 44 45 46 N NEC
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ML86V7665 T2D 8N L86V QSH-060-01-L-D-A ML86V7655 QTH-060-05-L-D-A L86V7655 U19880EE1V0UM00 TQFP100-P-1414-0 ML86V7655TB/ML86V7656TB ML86V7666/ RS485
Abstract: . 46 Electronic Shutter Line Timing . 46 Electronic Shutter ­ Integration Time Definition . 46 Electronic Shutter ­ DC and AC Bias Definition . 46 Electronic Shutter Description , .46 Figure 43: Integration Time Definition Intersil
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T3D 05 t3d 39 5962f9954701 T3-D HS-117RH HS-117EH 40VDC 25APEAK MIL-PRF-38535 HSYE-117RH
Abstract: . 46 Electronic Shutter Line Timing. 46 Electronic Shutter â'" Integration Time Definition . 46 Electronic Shutter Description , . 46 Figure 36 - Integration Time Definition. 46 Figure 37 - Package Drawing TRUESENSE Imaging
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4011M pg 4011CM KAI-4011 PS-00106 PS-0016 MTD/PS-0718 D263T
Abstract: . 46 Electronic Shutter Line Timing. 46 Electronic Shutter â'" Integration Time Definition . 46 Electronic Shutter Description , . 46 Figure 36 - Integration Time Definition. 46 Figure 37 - Package Drawing Intersil
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5962F9954701VYC t3d 19 smd transistor T3C T3D 55 5962F9954702VYC 5962F9954702VXC ISO9000 FN4560
Abstract: .46 Electronic Shutter Line Timing .46 Electronic Shutter â'" Integration Time Definition .46 Electronic Shutter â'" DC and AC Bias class="hl">46 , .45 Figure 35: Electronic Shutter Line class="hl">46 , .46 Figure 37: Package Drawing Kodak
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KAI-4011M KAI-4011CM
Abstract: .46 Electronic Shutter Line Timing .46 Electronic Shutter ­ Integration Time Definition .46 Electronic Shutter ­ DC and AC Bias class="hl">46 , .45 Figure 35: Electronic Shutter Line class="hl">46 , .46 Figure 37: Package Drawing Kodak
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Abstract: Cathode General-Purpose General-Purpose General-Purpose General-Purpose General-Purpose Single Diode Intersil
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117eh 5962F99-54701VXC E4 SMD TRANSISTOR
Abstract: .46 Electronic Shutter Line Timing .46 Electronic Shutter ­ Integration Time Definition .46 Electronic Shutter Description , .45 Figure 35: Electronic Shutter Line class="hl">46 , .46 Figure 37: Package Drawing Kodak
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T3D 53 diode MTD/PS-1062 KAI-04022 MTD/PS-0292
Abstract: °C -0.2 â'" V Ir V R = 50 V, TA = 70â' C â'" 50 HA Clamp Diode Forward Voltage vF Ip = 350 mA â'" 2.0 V Input Capacitance CIN V IN(OFF) Clamp Diode Leakage , = "25 mA, Note 1 15 â'" V Output Saturation Voltage V CE(SAT) V|m - -4.6 V, loUT , '" -5.0 Input Voltage v IN(ON) Iq u t = -120 mA, VCE Kodak
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Abstract: diode. Place the diode from VSS to GND. To disable one of the output amplifiers connect VDD to GND, do -
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TMPD4148 T3D 45 diode diode T3D diode T3D 25 T3D 40 DIODE T3D 18 diode T3D 77 diode TMPD459 TMPD914 TMPD2835 TMPD2836 TMPD2837 TMPD2838
Abstract: possible. The voltage on VSS may be set by using the 0.6 to 0.7 volt drop across a diode. Place the diode Kodak
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MTD/PS-0719 KAI-4021
Abstract: SPRAGUE/SEMICOND GROUP 8 5 1 4 0 1 9 SPRAGUE. ^3 D â  ÃS13ÃS0 S E M I C O N D S / ICS G003bn 3 â  93D 03619 H fö f-O S DIODE CHIPS â'˜THDâ'™ Photodiodes ELECTRICAL CHARACTERISTICS at TA = 25°C Id Vbr Device Type THD9751 THD9752 II* Min. (V , N/P Diode Diode Diode Diode Diode 3.0 3.0 5.0 5.0 5.0 120 100 100 80 100 N/P Diode Schottky Schottky Schottky Schottky 5.0 1.0 1.0 3.0 3.0 80 40 40 60 60 3-64 -
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UDN2580A/LW 2580/85L 25S0/85A UDN2580A UDN2580LW UDN2585A
Abstract: . 46 ELECTRONIC SHUTTER , . 46 Figure 34 - Electronic Shutter Line Timing , Through Photodiode and VCCD Phase 1 Photo diode p p+ n p p Light Shield V1 n p p p Cross Section Through , Transfer Top View V1 Photo diode Transfer Gate V2 V1 Fast Line Dump Lightshield not shown , image sensor. Put one diode D1 between the ESD and VSUB pins. Put one diode D2 on each pin that may Kodak
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T3D+36+diode MTD/PS-0307 KAI-2093 MTD/PS-1039 MTD/PS-1197
Abstract: . 46 LARGE SIGNAL OUTPUT . 46 STORAGE AND HANDLING , VCCD Phase 1 Photo diode p p+ n Light Shield V1 n p p Light Shield Transfer Gate , Transfer Top View V1 Photo diode Transfer Gate V2 V1 Fast Line Dump V2 Lightshield , to protect the image sensor. Put one diode D1 between the ESD and VSUB pins. Put one diode D2 on Kodak
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diode marking t3d T3D 01 DIODE T3D 17 diode T3D 28
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