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Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612DP Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

T3D 04 DIODE

Catalog Datasheet MFG & Type PDF Document Tags

T3D DIODE

Abstract: T3D 45 diode Cathode General-Purpose General-Purpose General-Purpose General-Purpose General-Purpose Single Diode , SP RAGU E/ S E M IC O N D GROUP PACKAGE INFORMATION T3D D Ö513ÖS0 0003555 i ~ r - 9 J - , IN MILLIMETERS 00827 0 ^ 0 .0 4 7 2 0.0551 0.0177 t 0.0374 0 04 1 3 0.0701 . 0.0807 , T3D D 0513050 0003053 0 PACK m u s INFORMATION t ~ - 9 / ~ < & o TO-236AB/STYLE CC , 0374 0 45 0 .6 0 f L r 0 04 1 3 .0701 o 0807 0 1102 102 0.1197 r~~ T ô t L _ r 095
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T3D diode

Abstract: T3D 55 diode 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (VI Figure 8. Body Diode Forward Voltage , ) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS 's Maximum Continuous Drain-Source Diode Forward Current 2.5 A Vso Drain-Source Diode Forward , b501130 â¡â¡400'ìS T3D This Material Copyrighted By Its Respective Manufacturer m L501130 0040DTbi
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NDT451N T3D diode T3D 55 diode T3D 45 diode Diode T3D 55 T3D 01 DIODE T3D 43 diode LS01130 0040CH3

T3D DIODE

Abstract: T3D 65 diode 15 30 td(o«) Turn-off Delay Time 52 78 lf Fall Time 18 36 SOURCE-DRAIN DIODE RATINGS , Continuous Source Current (Body Diode) SML801R2CN / SML751R2CN 7.0 Amps SML801R4CN / SML751R4CN 6.5 'SM Pulsed Source Current © (Body Diode) SML801R2CN / SML751R2CN 28 SML801R4CN / SML751R4CN 26 ^SD Diode Forward Voltage © (VQS - OV, ls - -lâ'ž [Cont.]) 1.3 Volts Irr Reverse , Characteristic Test Conditions MIN TYP MAX UNIT SOA1 Safe Operating Area VDS " 0 4 VDSS' >DS " PD ' 04 VDSS- 1
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T3D 65 diode t3d 68 diode Diode T3D 24 T3D 36 diode T3D 89 DIODE T3D 28 diode DD0D622 751R2CN 801R2CN 751R4GCN 801R4CN SML801R

T3D 54 DIODE

Abstract: Diode T3D 54 UESTCODE SEMICONDUCTORS T3D D â  TTQTTSS OODiaflT 1 â  Y^S^-^S WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single , '"1 R -V* f* s CO m 41 It m o +1 Li I 04 +.1 (0 CM w 1 1." 'J 4- 22 3 25 râ'"TPâ'"i T , ) â'¢C/Wma* Outline Drawing ScrewTorque Terminal Mount Kg.cm Transistor Diode 2.6 3.5 2.0
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T3D 54 DIODE Diode T3D 54 T3D 81 DIODE T3D 83 DIODE diode T3D 25 Diode T3D 41 CIRCUIT MG15N2YK1 MG25M2YK1 MG25N2YK1

Diode T3D 27

Abstract: T3D 55 diode 2 §} g ND 2^2A 7 -t^= ~t^3D- ! S £ . 26j2A8 25l2G 288 [23 2DIR (24' (Top view) 630 HD74U¥C16245 Absolute Maximum Ratings Item Supply voltage Input diode current Input voltage Output diode , - - 0.2 0.4 0.55 0.55 500 ±5.0 Ioh = " 100 M -A Ioh = -1 2 mA 3.0 to 3.6 - 0 to 5.5 Off
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Diode T3D 27 diode t3d T3D 85 diode T3D 27 diode Diode T3D 08 t3d 32 diode HD74LVC16245----16- HD74LVC16245

T3D DIODE clamp

Abstract: T3D 96 diode ) Collector-emitter Sustaining Voltage for ULN2064B - ULN2066B lc = 100 mA V, = 0.4 V 35 V 2 VcE(sat , ms tpHL Turn - off Delay Time 0.5 V, to 0.5 V0 1.5 us Ir Clamp Diode Leakage Current for ULN2064B - ULN2066B VR = 80 V VR = 80 V Tamb = 70 °C 50 100 MA HA 6 Vf Clamp Diode Forward Voltage IF - , Sustaining Voltage for ULN2068B - ULN2070B lc = 100 mA V, = 0.4 V 35 V 2 VcE(sat) Collector-emitter , -25 A 1.5 US Ir Clamp Diode Leakage Current for ULN2068B - ULN2070B VR = 50 V Vn = 50 V Tamb = 70
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ULN2074B ULN2076B T3D DIODE clamp T3D 96 diode t3d58 T3D 25 DIODE clamp Diode T3D 35 T3D 4N diode 7R2T237

T3D DIODE

Abstract: T3D 45 diode N AMER PHILIPS/DISCRETE b«ÌE d â  bbSB'm 0D307flS T3D â  APX Philips Semiconductors Product , source bond pad - 3.5 4.5 7.5 - nH nH nH REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tmb = 25 "C , Continuous reverse drain current Pulsed reverse drain current Diode forward voltage lF= 10 A ;VGS = 0 V - 1.2 , transconductance, T = 25'C. 9ts = Wo): conditions: VDS = 25 V 2.4 2.2 2.0 1.3 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 , / / | / â'"H- /I / / 0.4 O.B 1.2 1.6 VGS/V Fig. 11. Sub-threshold
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T0220AB BUK552 T3D 18 DIODE Diode T3D 03 dt t3d 13 BUK552-100A BUK552-100B 0D307 BUK552-100A/B
Abstract: (OFF) IOUt = -1 0 0 h A ,T a = 70°C -0.4 â'" V Clamp Diode Leakage Current !r V , -0.4 V, V q u t = V EE = -50 V, TA = 70°C !c ex 50 â'" 100 |XA 35 â'" V Output Sustaining Voltage VCE(SUS) V|fj = -0.4 V, Iq u t = -25 mA, Note 1 Output Saturation , °C -0.2 â'" V Ir V R = 50 V, TA = 70â' C â'" 50 HA Clamp Diode Forward Voltage vF Ip = 350 mA â'" 2.0 V Input Capacitance CIN V IN(OFF) Clamp Diode Leakage -
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UDN2580A/LW 2580/85L 25S0/85A UDN2580A UDN2580LW UDN2585A
Abstract: Waveforms As seen in the block diagram, each module contains a single Light Emitting Diode (LED) as its , ± 0.38 mm (0.015"). 2-42 44475Û4 OOl bOSf l T3D °e Notes Electrical , . 40 mA 2.4 Low Level Output Voltage Volts 0.4 VL O Rise Time I0h = -40 jlA max , 1 - 4 mm 1 2 - 6 mm 13 - 8 mm pqp Shaft Diameter 01 02 03 04 05 06 - 2 mm - 3 mm -
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HEDS-9000 HEDS-9100 HEDS9100 HEDS6100 4447SA4 4825X-000

T3D 96 diode

Abstract: T3D 91 module contains a single Light Emitting Diode (LED) as its light source. The light is collimated into a , OOlbGSfl T3D Electrical Characteristics Electrical Characteristics over Recommended Operating Range , Output Voltage VOH 2.4 Volts IOH = -40 |iA max. Low Level Output Voltage Vql 0.4 Volts Iol = 3.2 mA , mm 11-4 mm 02- 3 mm 14 - 5 mm 03 - 1/8 in. 12 - 6 mm 04 - 5/32 in. 13 - 8 mm 05 - 3/16 in. 06- 1/4
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T3D 91 65039-032 Diode T3D 64 Diode T3D 56 t3d 62 diode HEDS-6100 HEDS-8902 HEPS-5120 HEDS-91 HEDS-9000/9100/9200

Diode T3D 64

Abstract: T3D 67 diode is a clamping diode. 3. The external capacitor is charged to V c c in the stand-by state, i.e. no trigger. When the supply voltage is turned off Cx is discharged mainly through aninternal parasitic diode , . T he maximum forward current of the parasitic diode is ap­ proximately 2 0 mA. In cases w here Cx is large the time taken for the supply voltage to fall to 0.4 V c c can be calculated as follow s: tf > ( V c c - 0.7) â'¢ Cx/20 mA In cases where ti is too short an external champing diode is
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T3D 67 diode T3D 64 diode 54HC4538 74HC4538 4538B M54HC4538F1R M74HC4538M1R M74HC4538B1R

T3D zener DIODE

Abstract: T3D 63 ZENER DIODE external diode required for charged inductive loads Semiconductor Group 479 04.96 â  fla s , 0.4 -dWdtoH 1 - ton ton 50 10 160 â'" 10 to 30% Vout, R l = 12 Q, Tj , , 866 dia9ram Pa9e 486 1°) Reverse load current (through intrinsic drain-source diode) is normally , V V Off state input current (pin 2) V|N = 0.4 V: ÃN(ofl) 1 0.5 - 30 jiA , 623SbOS 00*12772 TTM 5.4 â'" - 6.1 V 0.4 SIEMENS BTS 432 E2 Truth Table Input
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T3D zener DIODE T3D 63 ZENER DIODE transistor SMD S73 T3D zener DIODE 44 T3D 04 DIODE SmD TRANSISTOR a77 0CH2777
Abstract: Phosphide light emitting diodes, the green devices use a Gallium Phosphide light emitting diode. Axial , , High Brightness 1.4 2.5 10 mA -1760 Tinted, Diffused, Low Current 0.2 0.4 2 mA , beyond the peak forward current listed in the Absolute Maximum Ratings. 4447504 G0170b7 T3D -
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HLMP-16XX HLMP-1740/ HLMP-18XX HLMP-1740 HLMP-1760 HLMP-1660

T3D DIODE

Abstract: 2n7226 ) 30.35 (1.195) 13.94 (0.545) 13.SM.US) T3D J ytâ'"m (0.045) - 035) |n| * 0.50 I0.020XR c A®|B| | , Repetitive Avalanche Energy © 15 mJ dv/dt Peak Diode Recovery dv/dt (3) 35 V/ns tj Tsra Operating , IRFM450, JANTXV-, JANTX-, 2N7228 Devices Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units lest Conditions Is Continuous Source Current (Body Diode) - - 12 A Modified MOSFET , Current (Body Diode) © - - 48 1 1 > VSD Diode Forward Voltage - - 1.7 V Tj - 25°C, Is - 12A, VGS - W Â
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I-364 2n7226 mosfet k 1357 T3D 76 T3D 40 DIODE 2N7228 JANTX T3D 53 diode MIL-S-1S500/592 MIL-S-19500 S5452 I-363

TDA 16846 P

Abstract: TDA 16846-2 P . Pin 14 overvoltage V14OVmax threshold changed from 17.0 V to 17.1 V. Pin 3 delay to switch on t3d , winding of the transformer and rectified by an external diode. Data Sheet 5 2003-07-31 TDA , "Primary Current Simulation" (see later) and the internal diode D1, so no additional start up resistor is , supplies the chip with current through the external diode D14. It is recommended to apply a small RF , Bias current Pin 1 ­ ­ 1.1 ­ 0.4 ­ 4.1 4.3 V V11 = 4.5 V V11 = 1.5 V Off-Time
Infineon Technologies
Original
TDA 16846 P TDA 16846-2 P TDA 2000 TDA 16846 IC tda 16846 16846 16846/TDA V14OV 16846-2/TDA 16846-2/TDA16847-2 16846/TDA16847 GPD05584
Abstract: ) Vq g OE2 19 OO 18 01 17 02 16 03 15 04 14 05 13 06 12 20 PIN NAMES Pins OEn Dn On Function O , to +7.0 -0 .5 < V| < + 7 .0 -0 .5 < V o < + 7 .0 -0 .5 < V q < V q q + 0.5 'IK 'O K DC Input Diode Current DC O utput Diode Current -5 0 -5 0 +50 io 'c c Ig n d T s TG DC O utput Source/S ink Current DC , Unit V 0.8 -0 .2 V V 2.2 2.4 2.2 0.2 0.4 0.4 0.55 V VCC = 3.0V; Io h = -2 4 m A v OL LOW , 1.27 BSC 0.050 BSC P ii T T L k M P T3D SEATING PLANE R M SUFFIX PLASTIC SO IC -
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MC74LCX541

TDA 16846 P

Abstract: IC tda 16846 switch on t3d slightly decreased. Pin 4 charge current I4ch and discharge current I4DCH added. Pull , winding of the transformer and rectified by an external diode. Version 2.0 5 31 Jul 2003 TDA , of C14 is done by resistor R2 of the "Primary Current Simulation" (see later) and the internal diode , diode D14. It is recommended to apply a small RF snubber capacitor of e.g. 100 nF parallel to the , ­ ­ 1.1 ­ 0.4 ­ 4.1 4.3 V V11 = 4.5 V V11 = 1.5 V Off-Time Circuit OTC (Pin 1
Infineon Technologies
Original
TDA 16847 TDA 2003 A H ic tda 2003 Service mode tv a9430 Datasheet ic tda for tv 16847/TDA
Abstract: < + 7 .0 -0 .5 < V q < V q q + 0.5 'IK 'O K DC Input Diode Current DC O utput Diode Current -5 0 -5 0 , 8mA Vq q M in 2.0 M ax U nit V 0.8 -0 .2 V V 2.2 2.4 2.2 0.2 0.4 0.4 0.55 V VCC , 1.27 BSC 0.050 BSC Pii L M P T T k T3D SEATING PLANE R M SUFFIX PLASTIC SO IC -
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MC74LCX240 C74LCX240
Abstract: DC O utput Voltage DC Input Diode Current Value -0 .5 to +7.0 - 0 .5 < V| < V q q + 0.5V -0 .5 < V o 2 V q q + 0.5 -2 0 +20 'O K DC O utput Diode Current -2 0 +20 io 'c c Ig n d T s TG DC O utput , Voltage -0 .1 V 2.2 2.48 0.1 0.4 ±1.0 ±3 36 -2 5 10 HA HA mA mA HA V 1. These values of V| are , PL 1.27 BSC 0.050 BSC PR i T T L k T3D SEATING PLANE R M SUFFIX PLASTIC SO IC -
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C74LVQ245 MC74LVQ245
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