500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592 visit Linear Technology - Now Part of Analog Devices
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1 visit Linear Technology - Now Part of Analog Devices
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

T35-4 diode

Catalog Datasheet MFG & Type PDF Document Tags

power diode T35-4

Abstract: T35-4 diode F O R '3 5 4 C P FOR 3 5 6 92CS-JM6J FUNCTIONAL DIAGRAM â  B uffere d inputs â  3 , /74H C T354 C D 54/74H C356, C D 54/74H C T356 9 2 C L -3 8 8 0 4 L E O - O -LE HCJHCT354 , ) . DC INPUT DIODE CURRENT. I« (FOR V, < -0.5 V OR V, > Vcc + 0.5V) . DC OUTPUT DIODE CURRENT. Iok , 6 ns) â'" H C /H C T 3 5 4 C H A R A C T E R IS TIC Cl (PF) SYM BO L P rop ag atio n D , '" 9 6 376 tn 8 â'" â'" 2 4 5 45 â'" â'" â'" 9 â'" 9 â
-
OCR Scan
power diode T35-4 T35-4 diode CD54/74HC354 CD54/74HCT354 CD54/74HC356 CD54/74HCT356 SCHS277 CD54/74HC/HCT354

74hct354

Abstract: ) . -0.5 to +7V DC INPUT DIODE CURRENT, l,K (FOR V, < -0.5 V OR V, > Vcc + 0.5V) . ±20mA DC OUTPUT DIODE CURRENT, l0* (FOR V. < -0.5 V OR V, > 0.5 V f Vcc , 5.9 - Typ Max Min Max Min Max 2 1.5 15 3 15 42 - 4.5 to 4,5 3.15 6 4.2 19 4.4 59 , 11 9 - - - - - 11 - - 12 70 14 12 - _ - ^4 - - - ns , . Min. Max. - - 100 - - - 120 - _ _ - 80 - 20 _ 20 _ ?5 _ ?4 _ 30 16 ns _ - - 17 - _ - 20 _
-
OCR Scan
74hct354 CDS4/74HC/HCT354 C054/74HC/HCT356 54HC/CD74HC D54/74HC/HCT356 HCT354 54/74HC

T35 diode

Abstract: power diode T35-4 (9.14) PH0810-35 V2.00 .975 (2 4 .7 7 ) U JU 2 .LIIB .100±.010 (2 .5 4 *,2 3 ) TT .230 , TYPE 100 pF ATC SIZE B 5000 pF 50 uF 50 VOLTS 1N4245 DIODE 10T/ND. 20 AWG ON 1 /8 ' DIAMETER PH0810-35 5 OHMS 1 /4 WATT lOT/NO. 22 AWG ON 3.1OHM 1 /4 WATT ROGERS 6010.5 .025' THICK, E R = 10.5
-
OCR Scan
T35 diode diode T35 -4-D6 00451X1015 P01JT

Silicon Schottky Diode sod123

Abstract: SCHOTTKY BARRIER DIODE 60 80 vr f = 1 MHz. Fig .4 Diode capacitance as a function of reverse voltage. August , Philips Semiconductors Preliminary specification Schottky barrier diode BAT56 FEATURES â , . DESCRIPTION Silicon epitaxial Schottky barrier diode with an integrated guard ring for stress protection. Intended for high speed switching, circuit protection and voltage clamping applications. The diode is , Ir reverse current VR = 60 V 200 nA Ti junction temperature 150 °C Cd diode capacitance Vr = 1 V
-
OCR Scan
Silicon Schottky Diode sod123 SCHOTTKY BARRIER DIODE MRA804 MBA038

BYT 12 DIODE

Abstract: T35 diode AEG CORP «g» 17E J> OOE^Sb GDOTÃ"GT Q rilLllROTIKl electronic Creative Techno'og es BYT 86 Ultra Fast Recovery Silicon Power Diode Application: Fast switched mode power supplies, freeweeiing and snubber diode in motorcontrol circuits T-o 3-/? Features: â'¢ Multiple diffusion â'¢ High voltage â'¢ High current Dimensions in mm 1 t35| 1 II j T I 10 3.5-t « r 1 1 1 1 1 1 174 e 2.9 5.8 , . T J 4 i Wt VF Fig. 2 Test circuit 100 AEG CORP 17E D 40 80 120 C° ^mb-'caseâ'"*" OOCHflll Ã
-
OCR Scan
BYT 12 DIODE aeg diode AEG T 99 N 800 BYT 45 J IR025 diode T35 T-03-

T35 diode

Abstract: diode T35 tà Discrete POWER & Signal Nitronal Technologies Semiconductor" FDH3595 High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501-1505 for characteristics. Absolute Maximum Ratings* ta = 25-câ'žm«*omeâ"¢*»noted Symbol Parameter Value Units W,v Working Inverse Voltage 125 V , Copyrighted By Its Respective Manufacturer in o> m CO X Q High Conductance Low Leakage Diode (continued , 750 890 mV lF = 100 mA 790 920 mV If = 200 mA 0.83 1.0 V Ct Diode Capacitance VH = 0,f = 1.0
-
OCR Scan
MMBD7000 L501130 high voltage diode T35 S01130 0040S

T35 diode

Abstract: XB15A709A0HR XB15A709 PIN DIODE Applications High Power Handling Small Capacitance at Zero , ) General Description The XB15A709A0HR PIN diode is designed for solid state antenna switching , TYP UNITS MAX µA IR V R = 50V Forward Voltage I F = 50mA 1.0 V Ct Diode , 0.5 1.0 3.0 k XB15A709 PIN DIODE Electrical Characteristics Reverse Current vs , 1.E+01 F(V) 1.E+02 R(V) Forward Series Resistance vs. Forward Current Diode
Torex Semiconductor
Original
100MH XB15A XB15A105 XB15A204 XB15A301

T35 diode

Abstract: diode T35 installing a high-voltage rectifier diode in a product, keep the diode surface clean to ensure full contact , deteriorate. Ensure that there are no bubbles around the surface area of the high-voltage rectifier diode , stress on the coating. (d) Do not touch the body of the diode directly with bare hands. If handling , the diode or sealing can compromise voltage withstand capability. (e) Form lead wires 5mm or more , a high-voltage rectifier diode is soldered, the heat applied to the leads may exceed the maximum
-
Original
ESJA04-02A ESJA04-03A ESJA58-08A ESJA08-08 ESJA52-12A ESJA53-16A ESJA18 ESJA08 ESJA04

T35 diode

Abstract: ndm diode Product Bulletin OP165W June 1996 0QPTEK GaAs Plastic Infrared Emitting Diode Type OP165W .050 (1.27) -, NDM 165 (4.19) 145 (3.68) .015 (0.36) DIMENSIONS ARE IN INCHES (MILLIMETERS , high intensity gallium arsenide infrared emitting diode molded in an IR transmissive amber tinted epoxy , Forward Voltage and Power Output vs Forward Current lF - FOHWARO CURRENT - mA O 2 0 4 06 ÃB 10 lF - , Cycle â'"0.1% 25°C -4 0 0 40 60 120
-
OCR Scan
OP505W ndm diode diode L2.70

T35 diode

Abstract: diode T35 installing a high-voltage rectifier diode in a product, keep the diode surface clean to ensure full contact , deteriorate. Ensure that there are no bubbles around the surface area of the high-voltage rectifier diode , stress on the coating. (d) Do not touch the body of the diode directly with bare hands. If handling , the diode or sealing can compromise voltage withstand capability. (e) Form lead wires 5mm or more , a high-voltage rectifier diode is soldered, the heat applied to the leads may exceed the maximum
-
Original
CS52-12A CS53-16A CS53 CS54 HB 00173

MPF256

Abstract: C96d Max Unit ON CHARACTERISTICS Gate Threshold Voltage (lD = 250 nA, VDS = VQS) VGS(th) 2 â'" 4 , 60 n) 'd(off) - - 100 Fall Time tf - - 60 SOURCE-DRAIN DIODE CHARACTERISTICS Diode , Continuous Source Current, Body Diode IRFD220, IRFD221 IRFD222, IRFD223 is â'" _ 0.8 0.7 Adc Pulsed Source Current, Body Diode IRFD220, IRFD221 IRFD222, IRFD223 'SM â'" â'" 6.4 5.6 A Forward Turn-On Time flS = , . «J I " K _L -J Jâ'"IIâ'" m mia E7ESS INC »ES mi MAX MIN MAX A 4 70 502 0IS5 0.198 R 6.10
-
OCR Scan
MPF256 C96d 1RFD220 1RFD220-223

diode T35

Abstract: NDS355N outline surface mount package. D 4 SuperSOTâ"¢-3 (SOT-23) Absolute Maximum Ratings_Ta = 25°C unless , - On Rise Time 14 30 ns ^oiom Turn - Off Delay Time 12 25 ns t, Turn-Off Fall Time 4 10 , Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Source Current 0.6 SM Maximum Pulse Source Current (Notea 'so Drain-Source Diode Forward Voltage Vâ'ž = 0V , , using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 250°C/W when
-
OCR Scan
NDS355N SG1130

SD217DE

Abstract: SD217 . Final value depends on mounting. CHIP CONFIGURATION 1 â'"Drain 2â'"Source 3â'"Gate 4â'"Diode Minimum bonding required. One Drain, One Source (left), One Source (right), One Gate. Bond Gate and Adjacent Diode to Common Point to Connect Protective Diode. Size: .040 x .044 x .013 inch. Body (Substrate) Is , Voltage SD217 15 V Is = 100nA, Vqd = Vbd = ~5V 4 SD219 20 5 BVqb Drain-Body Breakdown Voltage , ta - +2b°( ta- «r=n y 1 -v .z.-4 a Ã
-
OCR Scan
SD217DE SD219DE SD217CHP SD219CHP saat TQ-206AF SD217DE/R SD219DE/R

BYT 521

Abstract: B44 diode : Capacitance 15pF SUITABLE APPLICATIONS â  FREE WHEELING DIODE IN CONVERTERS AND MOTOR CONTROL CIRCUITS â , < 6 B tp(s) FIGURE 3 : Non repetitive peak surge current versus overload duration. 0,6 0,4 0,2 , As *> IM â  1 'y 4* = V ^ I 10-4 io-3 10-2 10-1 tpls) FIGURE 4 : Thermal impedance versus pulse width. FIGURE 5 : Voltage drop versus forward current. FIGURE , forward voltage versus
-
OCR Scan
BYT 521 B44 diode BYT 30PI- 400 S60100 30PI-200- 30PI- 30PI-200 7TH1237
Abstract: TC3W02F (TC3W02F) U nit in 2-TO-3 LINE D ECO DER W ITH ENABLE mm +0 3 4 .5 -0 2 The TC3W02F is a high speed C2MOS 2 to 4 LINE DECODER/ DEMULTIPLEXER fabricated with silicon gate , Range V qq (opr) =2V~6V +I do -i 1. 2. 3. 4. A B G GND 5. 6. 7. 8. ! Y1 , Output Voltage Input Diode Current Output Diode Current DC Output Current DC V q q /G round Current , 0.1 0.33 0.33 + 10 20.0 UNIT V V V V M TOSHIBA CORPORATION 179 tl G c 7 2 4 f l -
OCR Scan
Q02S2S4 G02S255
Abstract: IT Y . â'¢ CAN BE IN S T A L L E D D IR E C T L Y TO EQUIPMENT. 4 -r â * ' :U< 'sL, â , single u n it type module which incorporates a PIN diode and a receiving pream plifier 1C. â'¢ It can , . 3. 4. NOTES: 1. A ll dimensions are in m illim eters (inches). 2. Tolerance is ±0.25mm (.01 0 , 5.3 V 3. MODULE SCHEMATIC GND 4. RECEIVER MODULE EQUIVALENT CIRCUIT 270 Vcc Vout , . 2 is specified as the standard transm itter. However, the infrared diode to be used fo r the transm -
OCR Scan
LTM-8837 00D335S
Abstract: (on) ~ 4 -4 ^ lD = 2 .2A Description Third G eneration HEXFETs from International Rectifier , © Repetitive Avalanche Energy © Peak Diode Recovery dv/dt ® 5.0 3.0 P d @ Tc = 25 , Diode) â'" â'" 2.2 Ism Pulsed Source Current (Body Diode) © â'" â'" Units , '" s p-n junction diode. V sd Diode Forward Voltage â'" 1.6 V T j=25°C, ls=2.2A, V , , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance -
OCR Scan
IRFBC20 46SSHS2 0G11H5S

SO16 weight

Abstract: Series Engineered solutions fo r the transient environment DESCRIPTION This Bidirectional Diode , where voltage transients can permanently damage voltage sensitive components. This diode array is , independent for multiple I/O port protection. This TVS Diode Array series has a peak pulse power rating of 300 , Transient Voltage Suppressors available from ProTek Devices. This low capacitance Diode Array can be used , Applications (IEC 801-2, -4 & 5) · 300 watts peak power dissipation (8/20 jos) · Available in ranges from 5.0V
-
OCR Scan
SO16 weight SM16LC SM16LC05C SM16LC15C
Abstract: Avalanche Energy © Peak Diode Recovery dv/dt ® 50 0.79 0.31 mJ A 4.8 V/ns -55 t o +150 , mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques , junction diode. Is Continuous Source Current (Body Diode) Ism V sd Pulsed Source Current (Body Diode) © Diode Forward Voltage â'" â'" 2.0 V Tj=25°C, ls=0.79A, VG S=0V  , Û 140 T j, Junction Tem perature (°C) Fig 4. Normalized On-Resistance Vs. Temperature -
OCR Scan
554S5 IRFL214 DD15422

C085

Abstract: APT5027BN - VGS, lD - 1,0mA) 2 1000 ±100 4 nA Volts THERMAL CHARACTERISTICS Symbol RaJC R9JA , o ff) Turn-off Delay Time Fall Time blE D EST'iOT 0 0 0 0 7 4 1 ObT AVP APT5027BN , VDD = 0-5 VDSS lD- lD[Cont.]@25°C RG-1.8£2 36 27 61 ns SOURCE-DRAIN DIODE RATINGS AND , Diode) Pulsed Source Current ® (Body Diode) Diode Forward Voltage © (VQS - 0V, ls - -lD [Cont.]) Reverse , Clamped ^DS " Test Conditions ^DSS' *D S " PD ^ ®-4 Vdss' * " ^ ®eC' MIN 310 Watts 310 88 Amps TYP MAX
-
OCR Scan
C085 GGD740 Q0GG742
Showing first 20 results.