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ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL58315CRTZ-T13 Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° visit Intersil Buy
ICM7218DIJIZ Intersil Corporation LED DRVR 64Segment 5V 28-Pin CDIP visit Intersil
ISL58315CRTZ-T7A Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° visit Intersil Buy
ISL58315CRTZ Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° visit Intersil Buy

T2D DIODE

Catalog Datasheet MFG & Type PDF Document Tags

T2D DIODE

Abstract: T2D 70 diode SIEMENS Silicon PIN Diode BA 389 â'¢ Current-controlled RF resistor for switching and attenuating applications â'¢ Frequency range 1 MHz . 1 GHz â'¢ Not for new design Type Marking Ordering Code Pin , current Vr = 30 V /H - 50 nA Diode capacitance Vr= 10 V,/= 1 MHz Vr = 0 V,/= 100 MHz Ct - 0.55 0.35 0.5 ,   fl235b05 00fc,b5bM T2D â  Powered by ICminer.com Electronic-Library Service CopyRight 2003 BA 389 Forward characteristics If =/(Vf) Parallel conductance gt =/(Vr) Forward resistance /ï=/(/f) /= 100 MHz Diode capacitance
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T2D DIODE

Abstract: T2D 83 diode FROM MILLIMETERS. â¡ â¡ G b 4 D ci T2D â  [sO GaAs INFRARED EMITTING DIODE , GaAs INFRARED EMITTING DIODE OPTOELECTRONICS F5F1 PACKAGE DIMENSIONS ES^#RIPTI The F5F1 is a 940nm LED encapsulated in a clear, wide angle, sidelooker package. i t Black Color Code E T T~ II SECTION X-X LEAD PROFILE FEA TU RES G ood optical to m echanical alignm ent , 742 Fui OPTOELECTRONICS GaAs INFRARED EMITTING DIODE F5F1
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t2d diode

Abstract: T2D 80 diode Data Sheet Super Fast Recovery Diode RFN20T2D Applications General rectification Dimensions , Silicon epitaxial planer RFN20 T2D 8.0±0.2 12.0±0.2 14.0±0.5 13.5MIN 15.0±0.4 0.2 8.0 , A C C Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj , Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=10A VR=200V IF=0.5A,IR=1A,Irr=0.25×I R , :IR(nA) Tj=125°C 10000 Tj=150°C 1000 Tj=75°C 100 Tj=25°C 10 Tj=75°C 0.01 per diode
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t2d diode T2D 80 diode T2D 40 DIODE T2D 80_ diode RFN20 DIODE T2D DIODE 60 R1120A

T2D DIODE

Abstract: T2D DIODE 02 Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN16T2DFH Applications General , 5.0±0.2 RFN16 T2D â'  Construction Silicon epitaxial planer 1.2 1.3 14.0±0.5 13.5MIN , Limits 200 200 Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak , ï¼ ï¼ 2.5 °C/W Thermal Resistance * per diode www.rohm.com © 2011 ROHM Co., Ltd , =75°C 0.01 Tj=150°C Tj=125°C 1000 Tj=75°C 100 Tj=25°C 10 per diode per diode
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T2D DIODE 02

T2D DIODE

Abstract: T2D 16 DIODE RFN16T2D Data Sheet Super Fast Recovery Diode RFN16T2D Applications General rectification , Construction Silicon epitaxial planer RFN16 T2D 8.0±0.2 12.0±0.2 14.0±0.5 13.5MIN 0.7±0.1 0.05 , A C C Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj , Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=8A VR=200V IF=0.5A,IR=1A,Irr=0.25×I R , =125°C 1 Tj=150°C Tj=25°C Tj=75°C 100 0.1 Tj=75°C 0.01 per diode 0.001 0 500 1000 1500 FORWARD
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T2D 16 DIODE T2D DIODE 25 diode t2d 05 jc-115 diode t2d 80 T2d 30 diode

T2D 40 DIODE

Abstract: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20T2DFH Applications General , 12.0±0.2 14.0±0.5 1.2 1.3 0.8 13.5MIN 5.0±0.2 RFN20 T2D â'  Construction Silicon , ) Conditions Limits 200 200 Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one , Rth(j-c) junction to case ï¼ ï¼ 2.0 °C/W Thermal Resistance * per diode , =25°C 10 per diode per diode 0.001 0 500 1000 1 1500 FORWARD VOLTAGE:VF(mV) VF-IF
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T2D diode

Abstract: diode t2d Data Sheet Super Fast Recovery Diode RFN16T2D Applications General rectification Dimensions , Silicon epitaxial planer RFN16 T2D 8.0±0.2 12.0±0.2 14.0±0.5 13.5MIN 0.7±0.1 0.05 15.0±0.4 , A C C Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj , Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=8A VR=200V IF=0.5A,IR=1A,Irr=0.25×I R , =125°C 1 Tj=150°C Tj=25°C Tj=75°C 100 0.1 Tj=75°C 0.01 per diode 0.001 0 500 1000 1500 FORWARD
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diode t2d

RFN-10

Abstract: T2D DIODE RFN10T2D Data Sheet Super Fast Recovery Diode RFN10T2D Applications General rectification Dimensions (Unit : mm) 4.5±0.3 0.1 10.0±0.3 0.1 2.8±0.2 0.1 Structure 3)Low switching loss , RFN10 T2D 8.0±0.2 12.0±0.2 15.0±0.4 0.2 8.0 0.7±0.1 0.05 Features 1)Cathode common Dual type , Unit V V A A C C Tc=122°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value , Reverse recovery time Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=5A VR=200V IF
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RFN-10 T2D 14 DIODE RFN10 DIODE T2D 6 DIODE T2D 75 diode T2D 8 diode AVE24

T2D diode

Abstract: T2D 80 diode RFN20T2D Data Sheet Super Fast Recovery Diode RFN20T2D Applications General rectification , Construction Silicon epitaxial planer RFN20 T2D 8.0±0.2 12.0±0.2 14.0±0.5 13.5MIN 15.0±0.4 0.2 , 150 Unit V V A A C C Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle , current Reverse recovery time Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=10A VR , diode 0.001 0 500 1000 1500 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS per diode 1 0 50 100 150 200
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T2D 09 diode T2D 55 diode T2D 1 DIODE T2D 05 DIODE RFN-20 T2D 35

T2D 85 diode

Abstract: T2D 65 DIODE 4.5 A Repetitive Avalanche Energy Q 2.3 mJ Peak Diode Recovery dv/dt Q 6.5 , ® Source-Drain Diode Ratings and Characteristics Symbol Min. Typ. Max. Units Characteristic u Continuous Source Current Ism Pulsed-Source Current 0 - - 20 Vsd Diode Forward , BVâ'ž -BV dss â'"VD D N-CHANNEL POWER MOSFET IRLS510A Fig 15. Peak Diode , ( D riv e r ) D= T Gate Pulse Width Gate Pulse Period 5V IpM, Body Diode Forward
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T2D 85 diode T2D 65 DIODE T2D 54 DIODE T2D DIODE 45 D3T23

T2D DIODE 02

Abstract: T2D DIODE Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN10T2DFH Applications General rectification Dimensions (Unit : mm) Structure 4.5±0.3 ã''ã''ã'' 0.1 2.8±0.2 ã''ã''ã'' 0.1 , T2D â'  14.0±0.5 3)Low switching loss 8.0±0.2 12.0±0.2 Features 1)Cathode common , week factory) Conditions Limits 200 200 Tc=122°C 1/2Io at per diode 60Hz half sin wave , ns Rth(j-c) junction to case ï¼ ï¼ 2.5 °C/W Thermal Resistance * per diode
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T2D DIODE 16

T2D DIODE

Abstract: RFN-10 Data Sheet Super Fast Recovery Diode RFN10T2D Applications General rectification Dimensions (Unit : mm) 4.5±0.3 0.1 10.0±0.3 0.1 2.8±0.2 0.1 Structure 3)Low switching loss 14.0±0.5 , T2D 8.0±0.2 12.0±0.2 15.0±0.4 0.2 8.0 0.7±0.1 0.05 Features 1)Cathode common Dual type , Unit V V A A C C Tc=122°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value , Reverse recovery time Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=5A VR=200V IF
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T2D 6 N diode T2D 80

T2D 24 DIODE

Abstract: T2d 43 diode DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Is Drain-Source Diode Forward Voltage V so 0 VGS= Reverse Recovery Time V V - , Threshold Variation with Temperature. NDT455N Rev.F 34^74 OQBSnS T2D Typical Electrical , 1 2 5 0.2 0.4 0.6 0.8 1 1.2 VSD, BOOY DIODE FORWARD VOLTAGE (V) Figure 7. Breakdown Voltage Variation with Temperature. 0.1 0.0001 10 Figure 8. Body Diode
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T2D 24 DIODE T2d 43 diode T2d 61 diode T2D DIODE 42 T2D 04 DIODE

T2D 62 diode

Abstract: T2D 98 DIODE ,) Turn-Off-Time W (ton=td(o +tf) iD Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time , *,=25â'˜C Forward Characteristics of Reverse Diode Typical Gate Charge Characteristic lp=f(Vso); W , notice! â  22307=12 0 0 0 4 b b 7 T2D t W paremet6r:0=t/T
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T2D 62 diode T2D 98 DIODE T2D 27 diode T2D 70 diode 2SK2645-01MR

T2D 22 diode

Abstract: T2D 56 DIODE ) Collector current (d.c.) - V ebo - 'c Collector current (peak value) - ' cm Reverse diode , A; â'"V CE â' 3 V Diode, forward voltage l F = 1,5 A Switching times (between 10% and 90 , multiplying factor at the 496 Y March 1986 bbSBTBl DDBMbbS T2D tp (s) V q EO max
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T2D 22 diode T2D 56 DIODE BDT60 BDT60B BDT61 BDT61A BDT61B BDT61C

T2D 96 diode

Abstract: T2D 78 diode + 0.5 Vo DC Output Voltage -0 .5 to V c c + 0 5 V l|K DC Input Diode Current ± 20 mA â'¢ok DC Output Diode Current ± 20 mA 'o DC Output Source Sink Current , CHARACTERISTICS T2D â  S ^ Parameter Vcc V|H High Level Input Voltage 2.0 4.5 6.0 1.5
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T2D 96 diode T2D 78 diode T2D 44 diode t2d 76 diode value T2D DIODE 29 T2D 36 DIODE M54HC365/366 M74HC365/366 HC365 HC366 M54/74HC365 M54/74HC366

T2D DIODE

Abstract: T2D DIODE 64 Vcc DC supply voltage -0.5 to +4.6 V l|k DC input diode current V| , performance. 711002t. DDTSñOO T2D May 11, 1994 6-27 This Material Copyrighted By Its Respective
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T2D DIODE 64 T2D DIODE 32 T2D DIODE 46 t2d 63 diode IN T2D DIODE T2D DIODE 63 74LVT273 LVT273 74LVT

T2D DIODE 34

Abstract: Diode T2D od -2 P T.2D h -0 . -o . °b -Qb ha- 1.2D 'Oc-he^" 'Od-hd - -Oe -ö c -Od , Characteristics Symbol Min V|H V|L VCD VOH Input HIGH Voltage Input LOW Voltage Input Clamp Diode Voltage Output
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T2D DIODE 34 Diode T2D od T2D 95 diode T2D DIODE 06 T2D 34 T2D 06 DIODE 54F/74F398 54F/74F399 74F398PC 54F398DM 74F398SC 54F398FM

T2D DIODE 46

Abstract: T2D DIODE 48 Diode Voltage Vrr=Min. I[N=-1« mA -0.7 -1.2 V Ii Input 1IIOH Current V{ ('=Maxâ'ž V!N=V{'( 5 H-A , ( â'¢Y74KC,r240TQC; Q5 20-Lead (150-Mil) QSOP Qil ( 'YSdRf T2d(ITn\/TR ni, mi.
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T2D DIODE 48 T2D 78 T2D DIODE 41 T2D 41 DIODE T2D 47 DIODE diode 78 t2d CY54/74FCT240T CY54/74FCT244T FCT240T FCT244T Y54FC T240ATLMB

T2D 70 diode

Abstract: T2D DIODE Enable (TTL Compatible). A high level on this pin forces the 5-180 S51fl4bfl Q G l Q b T S T2D , ±25kV FiXDt RXOO GND "SCHOTTKY DIODE PREVENTS V ss FROM EXCEEDING GND ON POWER-UP OR POWER-DOWN V$s
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LTC1320 RS422/RS562 RS422 RS562 RS562/RS562
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