500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments

T2D DIODE

Catalog Datasheet MFG & Type PDF Document Tags

T2D DIODE

Abstract: T2D 70 diode SIEMENS Silicon PIN Diode BA 389 â'¢ Current-controlled RF resistor for switching and attenuating applications â'¢ Frequency range 1 MHz . 1 GHz â'¢ Not for new design Type Marking Ordering Code Pin , current Vr = 30 V /H - 50 nA Diode capacitance Vr= 10 V,/= 1 MHz Vr = 0 V,/= 100 MHz Ct - 0.55 0.35 0.5 ,   fl235b05 00fc,b5bM T2D â  Powered by ICminer.com Electronic-Library Service CopyRight 2003 BA 389 Forward characteristics If =/(Vf) Parallel conductance gt =/(Vr) Forward resistance /ï=/(/f) /= 100 MHz Diode capacitance
-
OCR Scan

T2D DIODE

Abstract: T2D 83 diode FROM MILLIMETERS. â¡ â¡ G b 4 D ci T2D â  [sO GaAs INFRARED EMITTING DIODE , GaAs INFRARED EMITTING DIODE OPTOELECTRONICS F5F1 PACKAGE DIMENSIONS ES^#RIPTI The F5F1 is a 940nm LED encapsulated in a clear, wide angle, sidelooker package. i t Black Color Code E T T~ II SECTION X-X LEAD PROFILE FEA TU RES G ood optical to m echanical alignm ent , 742 Fui OPTOELECTRONICS GaAs INFRARED EMITTING DIODE F5F1
-
OCR Scan

t2d diode

Abstract: T2D 80 diode Data Sheet Super Fast Recovery Diode RFN20T2D Applications General rectification Dimensions , Silicon epitaxial planer RFN20 T2D 8.0±0.2 12.0±0.2 14.0±0.5 13.5MIN 15.0±0.4 0.2 8.0 , A C C Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj , Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=10A VR=200V IF=0.5A,IR=1A,Irr=0.25×I R , :IR(nA) Tj=125°C 10000 Tj=150°C 1000 Tj=75°C 100 Tj=25°C 10 Tj=75°C 0.01 per diode
ROHM
Original
t2d diode T2D 80 diode T2D 40 DIODE T2D 80_ diode RFN20 DIODE T2D DIODE 60 R1120A

T2D DIODE

Abstract: T2D DIODE 02 Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN16T2DFH Applications General , 5.0±0.2 RFN16 T2D â'  Construction Silicon epitaxial planer 1.2 1.3 14.0±0.5 13.5MIN , Limits 200 200 Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak , ï¼ ï¼ 2.5 °C/W Thermal Resistance * per diode www.rohm.com © 2011 ROHM Co., Ltd , =75°C 0.01 Tj=150°C Tj=125°C 1000 Tj=75°C 100 Tj=25°C 10 per diode per diode
ROHM
Original
T2D DIODE 02

T2D DIODE

Abstract: T2D 16 DIODE RFN16T2D Data Sheet Super Fast Recovery Diode RFN16T2D Applications General rectification , Construction Silicon epitaxial planer RFN16 T2D 8.0±0.2 12.0±0.2 14.0±0.5 13.5MIN 0.7±0.1 0.05 , A C C Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj , Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=8A VR=200V IF=0.5A,IR=1A,Irr=0.25×I R , =125°C 1 Tj=150°C Tj=25°C Tj=75°C 100 0.1 Tj=75°C 0.01 per diode 0.001 0 500 1000 1500 FORWARD
ROHM
Original
T2D 16 DIODE T2D DIODE 25 diode t2d 05 jc-115 diode t2d 80 T2d 30 diode

T2D 40 DIODE

Abstract: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20T2DFH Applications General , 12.0±0.2 14.0±0.5 1.2 1.3 0.8 13.5MIN 5.0±0.2 RFN20 T2D â'  Construction Silicon , ) Conditions Limits 200 200 Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one , Rth(j-c) junction to case ï¼ ï¼ 2.0 °C/W Thermal Resistance * per diode , =25°C 10 per diode per diode 0.001 0 500 1000 1 1500 FORWARD VOLTAGE:VF(mV) VF-IF
ROHM
Original

T2D diode

Abstract: diode t2d Data Sheet Super Fast Recovery Diode RFN16T2D Applications General rectification Dimensions , Silicon epitaxial planer RFN16 T2D 8.0±0.2 12.0±0.2 14.0±0.5 13.5MIN 0.7±0.1 0.05 15.0±0.4 , A C C Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj , Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=8A VR=200V IF=0.5A,IR=1A,Irr=0.25×I R , =125°C 1 Tj=150°C Tj=25°C Tj=75°C 100 0.1 Tj=75°C 0.01 per diode 0.001 0 500 1000 1500 FORWARD
ROHM
Original
diode t2d

RFN-10

Abstract: T2D DIODE RFN10T2D Data Sheet Super Fast Recovery Diode RFN10T2D Applications General rectification Dimensions (Unit : mm) 4.5±0.3 0.1 10.0±0.3 0.1 2.8±0.2 0.1 Structure 3)Low switching loss , RFN10 T2D 8.0±0.2 12.0±0.2 15.0±0.4 0.2 8.0 0.7±0.1 0.05 Features 1)Cathode common Dual type , Unit V V A A C C Tc=122°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value , Reverse recovery time Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=5A VR=200V IF
ROHM
Original
RFN-10 T2D 14 DIODE RFN10 DIODE T2D 6 DIODE T2D 75 diode T2D 8 diode AVE24

T2D diode

Abstract: T2D 80 diode RFN20T2D Data Sheet Super Fast Recovery Diode RFN20T2D Applications General rectification , Construction Silicon epitaxial planer RFN20 T2D 8.0±0.2 12.0±0.2 14.0±0.5 13.5MIN 15.0±0.4 0.2 , 150 Unit V V A A C C Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle , current Reverse recovery time Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=10A VR , diode 0.001 0 500 1000 1500 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS per diode 1 0 50 100 150 200
ROHM
Original
T2D 09 diode T2D 55 diode T2D 1 DIODE T2D 05 DIODE RFN-20 T2D 35

T2D 85 diode

Abstract: T2D 65 DIODE 4.5 A Repetitive Avalanche Energy Q 2.3 mJ Peak Diode Recovery dv/dt Q 6.5 , ® Source-Drain Diode Ratings and Characteristics Symbol Min. Typ. Max. Units Characteristic u Continuous Source Current Ism Pulsed-Source Current 0 - - 20 Vsd Diode Forward , BVâ'ž -BV dss â'"VD D N-CHANNEL POWER MOSFET IRLS510A Fig 15. Peak Diode , ( D riv e r ) D= T Gate Pulse Width Gate Pulse Period 5V IpM, Body Diode Forward
-
OCR Scan
T2D 85 diode T2D 65 DIODE T2D 54 DIODE T2D DIODE 45 D3T23

T2D DIODE 02

Abstract: T2D DIODE Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN10T2DFH Applications General rectification Dimensions (Unit : mm) Structure 4.5±0.3 ã''ã''ã'' 0.1 2.8±0.2 ã''ã''ã'' 0.1 , T2D â'  14.0±0.5 3)Low switching loss 8.0±0.2 12.0±0.2 Features 1)Cathode common , week factory) Conditions Limits 200 200 Tc=122°C 1/2Io at per diode 60Hz half sin wave , ns Rth(j-c) junction to case ï¼ ï¼ 2.5 °C/W Thermal Resistance * per diode
ROHM
Original
T2D DIODE 16

T2D DIODE

Abstract: RFN-10 Data Sheet Super Fast Recovery Diode RFN10T2D Applications General rectification Dimensions (Unit : mm) 4.5±0.3 0.1 10.0±0.3 0.1 2.8±0.2 0.1 Structure 3)Low switching loss 14.0±0.5 , T2D 8.0±0.2 12.0±0.2 15.0±0.4 0.2 8.0 0.7±0.1 0.05 Features 1)Cathode common Dual type , Unit V V A A C C Tc=122°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value , Reverse recovery time Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=5A VR=200V IF
ROHM
Original
T2D 6 N diode T2D 80

T2D 24 DIODE

Abstract: T2d 43 diode DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Is Drain-Source Diode Forward Voltage V so 0 VGS= Reverse Recovery Time V V - , Threshold Variation with Temperature. NDT455N Rev.F 34^74 OQBSnS T2D Typical Electrical , 1 2 5 0.2 0.4 0.6 0.8 1 1.2 VSD, BOOY DIODE FORWARD VOLTAGE (V) Figure 7. Breakdown Voltage Variation with Temperature. 0.1 0.0001 10 Figure 8. Body Diode
-
OCR Scan
T2D 24 DIODE T2d 43 diode T2d 61 diode T2D DIODE 42 T2D 04 DIODE

T2D 62 diode

Abstract: T2D 98 DIODE ,) Turn-Off-Time W (ton=td(o +tf) iD Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time , *,=25â'˜C Forward Characteristics of Reverse Diode Typical Gate Charge Characteristic lp=f(Vso); W , notice! â  22307=12 0 0 0 4 b b 7 T2D t W paremet6r:0=t/T
-
OCR Scan
T2D 62 diode T2D 98 DIODE T2D 27 diode T2D 70 diode 2SK2645-01MR

T2D 22 diode

Abstract: T2D 56 DIODE ) Collector current (d.c.) - V ebo - 'c Collector current (peak value) - ' cm Reverse diode , A; â'"V CE â' 3 V Diode, forward voltage l F = 1,5 A Switching times (between 10% and 90 , multiplying factor at the 496 Y March 1986 bbSBTBl DDBMbbS T2D tp (s) V q EO max
-
OCR Scan
T2D 22 diode T2D 56 DIODE BDT60 BDT60B BDT61 BDT61A BDT61B BDT61C

T2D 96 diode

Abstract: T2D 78 diode + 0.5 Vo DC Output Voltage -0 .5 to V c c + 0 5 V l|K DC Input Diode Current ± 20 mA â'¢ok DC Output Diode Current ± 20 mA 'o DC Output Source Sink Current , CHARACTERISTICS T2D â  S ^ Parameter Vcc V|H High Level Input Voltage 2.0 4.5 6.0 1.5
-
OCR Scan
T2D 96 diode T2D 78 diode T2D 44 diode t2d 76 diode value T2D DIODE 29 T2D 36 DIODE M54HC365/366 M74HC365/366 HC365 HC366 M54/74HC365 M54/74HC366

T2D DIODE

Abstract: T2D DIODE 64 Vcc DC supply voltage -0.5 to +4.6 V l|k DC input diode current V| , performance. 711002t. DDTSñOO T2D May 11, 1994 6-27 This Material Copyrighted By Its Respective
-
OCR Scan
T2D DIODE 64 T2D DIODE 32 T2D DIODE 46 t2d 63 diode IN T2D DIODE T2D DIODE 63 74LVT273 LVT273 74LVT

T2D DIODE 34

Abstract: Diode T2D od -2 P T.2D h -0 . -o . °b -Qb ha- 1.2D 'Oc-he^" 'Od-hd - -Oe -ö c -Od , Characteristics Symbol Min V|H V|L VCD VOH Input HIGH Voltage Input LOW Voltage Input Clamp Diode Voltage Output
-
OCR Scan
T2D DIODE 34 Diode T2D od T2D 95 diode T2D DIODE 06 T2D 34 T2D 06 DIODE 54F/74F398 54F/74F399 74F398PC 54F398DM 74F398SC 54F398FM

T2D DIODE 46

Abstract: T2D DIODE 48 Diode Voltage Vrr=Min. I[N=-1« mA -0.7 -1.2 V Ii Input 1IIOH Current V{ ('=Maxâ'ž V!N=V{'( 5 H-A , ( â'¢Y74KC,r240TQC; Q5 20-Lead (150-Mil) QSOP Qil ( 'YSdRf T2d(ITn\/TR ni, mi.
-
OCR Scan
T2D DIODE 48 T2D 78 T2D DIODE 41 T2D 41 DIODE T2D 47 DIODE diode 78 t2d CY54/74FCT240T CY54/74FCT244T FCT240T FCT244T Y54FC T240ATLMB

T2D 70 diode

Abstract: T2D DIODE Enable (TTL Compatible). A high level on this pin forces the 5-180 S51fl4bfl Q G l Q b T S T2D , ±25kV FiXDt RXOO GND "SCHOTTKY DIODE PREVENTS V ss FROM EXCEEDING GND ON POWER-UP OR POWER-DOWN V$s
-
OCR Scan
LTC1320 RS422/RS562 RS422 RS562 RS562/RS562
Showing first 20 results.