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TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments

T2D 79 diode

Catalog Datasheet MFG & Type PDF Document Tags

marking A4t sot23

Abstract: PH C5V1 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE , ) 1PS76SB70 S2 SC-76/SOD323 1N4734A 4734A P SOD66 (DO41) 1PS79SB10 F SC-79/SOD523 1N4735A 4735A P SOD66 (DO41) 1PS79SB40 T SC-79/SOD523 1N4736A 4736A P SOD66 (DO41) 1PS79SB70 G SC-79/SOD523 1N4737A 4737A P SOD66 (DO41) 1PS88SB48 8t5 SC-88/SOT363 , 1999 Jun 11 79 Philips Semiconductors Small Signal Transistors and Diodes TYPE NUMBER
Philips Semiconductors
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marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 1N5817 1N821 1N5818 1N821A 1N5819 1N823

marking A4t sot23

Abstract: A1t SOT23 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE , 1N4734A 4734A P SOD66 (DO41) 1PS79SB10 F SC-79/SOD523 1N4735A 4735A P SOD66 (DO41) 1PS79SB40 T SC-79/SOD523 1N4736A 4736A P SOD66 (DO41) 1PS79SB70 G SC-79/SOD523 , ; JPt SOT23 BAS516 6 SC-79/SOD523 BAS20 JRp; JRt SOT23 BAT17 A3p; A3t , BZV49-C16 SC-62/SOT89 DIODE MARKING CODE TO TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE
Philips Semiconductors
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A1t SOT23 3Ft SOT23 transistor t04 sot23 A4T SOT23 sot23 marking A1T A6t SOT23 1PS59SB10 SC-59/SOT346 1N823A 1PS59SB14 1N825 1PS59SB15

T2D DIODE

Abstract: T2D 79 diode Output Noise Power +5 +7 +9 -79 MHz MHz MHz dBm dBm dBm dBm dBm % % % % dBm dBm V a t EN = 2-6V, P|N , =+85 °C, VCC=2.7V, VAPC1 2 = 2.6V At Po u t , m a x . V Cc = 3 - 5 V A t p OUT,MAX> V CC= 3 .0 V PoU T=+2°d , common inductance. Control input for the PIN diode. The purpose of the PIN diode is to attenuate the RF , match when the bias of the input stage is turned off. When this pin is "high" the PIN diode control is , eet the GSM system specs under those conditions, a PIN diode a ttenuator co n nected to the input can
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OCR Scan
T2D 40 DIODE Diode T2D 79 T2D DIODE 32 t2d 17 diode DCS1800 DCS1900 F2140 1700M F2138 RF2140

T2D 79 diode

Abstract: T2D diode -79 MHz MHz MHz dBm dBm dBm dBm dBm % % % % dBm dBm +32 +31.5 Temp=25 °C, V CC=3.5V, VAPC12 , = 3 .0 V PoU T=+2°d B m POUT=+10dBm RBW =100kHz, 1805MHz to 1880MHz and 1930MHz to 1990MHz , ground slug. Control input for the PIN diode. The purpose of the PIN diode is to attenuate the RF input , when the bias of the input stage is turned off. When this pin is "high" the PIN diode control is turned , specs under those conditions, a PIN diode a ttenuator co n nected to the input can be turned on. The
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OCR Scan
T2D DIODE 79 T2D 65 DIODE diode T2D series t2d 68 diode value T2D 26 diode IN T2D DIODE

T2D DIODE 45

Abstract: T2D 85 diode +9 -79 MHz MHz MHz dBm dBm dBm dBm dBm % % % % dBm dBm Vat EN= 2-6V, P|N=+6dBm, Freq = 1710MHz to , o u t , m a x . V Cc = 3 - 5 V A t p OUT,MAX> V CC=3.0V PoU T=+2°d B m +32 +31.5 POUT , internally connected to the ground slug. Control input for the PIN diode. The purpose of the PIN diode is to , input match when the bias of the input stage is turned off. When this pin is "high" the PIN diode , conditions, a PIN diode a ttenuator co n nected to the input can be turned on. The figure below show s how
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OCR Scan
T2D DIODE 45 T2D 85 diode T2D 37 DIODE T2D 55 diode

T2d DIODE

Abstract: T2D DIODE 48 GND FB 1 4 2 Inhb 1 3 2 E1CLK Clk19M 1 12 19 25 32 39 51 65 72 79 85 92 103 117 124 131 137 144 158 170 177 183 190 197 D2 DIODE PWRJACK J17 4 , QXFRMR T2D 25 2 D13 PO300SA 23 22 1 5 D14 PO300SA 21 4 QXFRMR T2C 30 2
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T2D DIODE 48 T2D 66 diode T2D DIODE 46 T2D DIODE 49 T2d 86 diode T2D 83 DIODE 384MH PTH08080W LED-1206 XCF02S XRT86SH221 T86SH

T2D DIODE 46

Abstract: T2D DIODE 48 39 51 65 72 79 85 92 103 117 124 131 137 144 158 170 177 183 190 197 5 VOut , Clk19M 2 77 D2 DIODE Vcc3v3 LIUClkIn R13 10 3 M0 M1 M2 19 20 18 AIN0 , QXFRMR T1A 40 2 D11 PO300SA 38 37 1 5 D12 PO300SA 36 4 QXFRMR T2D 25 2
Exar
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T2D 82 diode T2D 87 diode T3D 54 DIODE t3d diode T2D DIODE 81 T3D 98 diode XRT86SH221ES XRT75VL00

philips diode PH 33D

Abstract: philips diode PH 33J Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE , ) 1PS76SB70 S2 SC-76/SOD323 1N4734A 4734A P SOD66 (DO41) 1PS79SB10 F SC-79/SOD523 1N4735A 4735A P SOD66 (DO41) 1PS79SB40 T SC-79/SOD523 1N4736A 4736A P SOD66 (DO41) 1PS79SB70 G SC-79/SOD523 1N4737A 4737A P SOD66 (DO41) 1PS88SB48 8t5 SC-88/SOT363 , JPp; JPt SOT23 BAS516 6 SC-79/SOD523 BAS20 JRp; JRt SOT23 BAT17 A3p; A3t
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philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph 1N825A 1PS59SB16 1N827 1PS59SB20 1N827A 1PS59SB21

philips diode PH 33D

Abstract: PH C5V1 Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER 1N821 1N821A , -75/SOT416 SC-76/SOD323 SC-76/SOD323 SC-76/SOD323 SC-76/SOD323 SC-76/SOD323 SC-79/SOD523 SC-79/SOD523 SC-79 , SC-79/SOD523 SOT23 SOT23 SOT23 SC-70/SOT323 SOT23 SC-70/SOT323 SOT23 SC-70/SOT323 SC-70/SOT323 , SC-59/SOT346 SC-59/SOT346 SC-59/SOT346 SC-62/SOT89 SC-59/SOT346 SC-59/SOT346 SC-59/SOT346 DIODE , -59/SOT346 SC-59/SOT346 SC-59/SOT346 SC-62/SOT89 SC-62/SOT89 SC-79/SOD523 SC-59/SOT346 SC-59/SOT346 SC
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PH 33D PH33D ph33g PH 33G philips diode PH 37m ph c24 1N829 1N829A 1N914 1N4148 1N4150 1N4151

T2D DIODE

Abstract: T3D DIODE LA17 104 102 99 98 97 96 95 93 92 91 90 89 87 86 84 83 82 81 80 79 77 74 73 , DIODE + + LEDon# D61 2 2 4 50 49 48 47 46 43 42 41 39 38 37 36 35 34 , RTIP D12 PO300SA 36 4 RJ2 RJ45 RRNG QXFRMR T2D 25 2 TTIP D13 PO300SA 23 , 1 4 5 3 2 TxLev0 TAOS0 REQEN0 LLB0 RLB0 STS1_0 E3_0 DMO0 RLOL0 RLOS0 79 95 94
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T2D DIODE 94 AK9 RJ12 C1959 transistor ad149 T8046 T30L PMEAD30 93CS66 T86VSH328 T86VSH328SCH XRT86VSH328

XRT75VL00

Abstract: tms 374 cd 13 90 89 87 86 84 83 82 81 80 79 77 74 73 72 69 68 67 65 64 63 62 61 LD0 LD1 , 2 4 C17 PAR CON PCIA_0 VCC5V C5 0.1uF IDSEL -CBE0 VCC3V3 DIODE C4 , D14 PO300SA 21 19 C131 16 2 D13 PO300SA 23 22 17 20 D21 4 QXFRMR T2D , TEST SFMEnb SR/DR ClkOEnb RxA RxB 79 95 94 C196 499 499 0.01uF T 37.4 C194
Exar
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XRT86SH328 tms 374 cd 13 RJ19 T3D 81 DIODE RJ23 y2w15 XRT91L30 XRT86SH328ES XRT86SH3

DIODE T3D 9D

Abstract: Diode T3D 7d T2D Synchronous Gate Off to Top Gate-On Delay Time CLOAD = 3300pF Each Driver 70 ns ns , resistor attached to the VID inputs also has a series diode to allow input voltages higher than the VIDVCC , . This pin connects to the source of the bottom N-channel MOSFET, the anode of the Schottky diode and , swing at this pin is from a Schottky diode (external) voltage drop below ground to VIN. BOOST (Pin 23 , this pin is from a diode drop below INTVCC to VIN + INTVCC. TG (Pin 24): High Current Gate Drive for
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OCR Scan
DIODE T3D 9D Diode T3D 7d P19Ab t2d 9d L464001

ZENER DIODE t2d

Abstract: T2D DIODE 100uF GND VCCA LXT9785_SS_SMII_DEMO B VCC 1.0uF + C10 1.0uF 100uF DIODE , GNDD GNDD GNDD GNDD 66 79 183 195 B 103 116 117 130 131 144 145 158 VCCR0 VCCR1 , D4 DIODE GND DIODE D3 VCC_EXT VCC + .001uF C17 Ferrite Bead FB1 C , C 26 15 25 TRANSFORMER H1164 T2D 21 22 18 20 19 VCC_CT 23 16 17
Linear Technology
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LTC1736 ZENER DIODE t2d t2d 76 diode value T2D 70 diode t2d 40 zener diode T2D DIODE panasonic Diode zener T2D LT1375/LT1376 LTC1435A LTC1436A/LTC1436A-PLL LTC1474/LTC1475

DIODE C136

Abstract: smd diode R616 D94 VCCA VCC + C10 1.0uF + C9 C8 GND 1.0uF 100uF DIODE + C137 + C138 , 120 126 135 141 149 155 VCCD VCCD VCCD VCCD GNDD GNDD GNDD GNDD 66 79 183 195 , 127 134 148 GND DIODE D3 DIODE D4 VCC_EXT VCC FB1 + .001uF C17 Ferrite , H1164 T2D 21 22 18 20 19 VCC_CT 23 16 17 24 27 14 VCC_CT 28 13
Intel
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DIODE C136 smd diode R616 smd diode R622 smd diode R648 smd diode d136 T2D 21 LXD9785 1/10W ERJ-6ENF30R1V TP12SH8AQE TP62-71 IC149-208-061S5

smd diode OE R612

Abstract: smd diode u1j 10uF 22K 83 84 102 76 77 79 82 85 90 70 71 207 206 REF_CLK4 GNDA , BANANA JACK DIODE D4 GND + GND BANANA JACK 92 RESET MDINT R10 100uF TANT , TANT VCCA + C12 GND DIODE D3 VCCD GNDA D 1.0uF TANT 100uF TANT 93 94 95 96 97 GND DIODE D5 FB1 167 166 165 164 163 177 176 175 174 173 172
Intel
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smd diode OE R612 smd diode u1j R645 ss smii CAP 103 2KV diode U1J ERJ6GEY0R00V MM74HC14M U14-29 SN74LVC244AD EP20K100QC20 SC1566CM-2

74HC595 SMD

Abstract: smd transistor w18 TG/BG T2D Synchronous Gate Off to Top Gate-On Delay Time CLOAD = 3300pF Each Driver 70 , . This pin connects to the source of the bottom N-channel MOSFET, the anode of the Schottky diode and , Capacitor. Voltage swing at this pin is from a Schottky diode (external) voltage drop below ground to VIN , . Voltage swing at this pin is from a diode drop below INTVCC to VIN + INTVCC. TG (Pin 16): High Current , Schottky diode when the top MOSFET is turned off. As VIN decreases towards VOUT, the converter will
Intel
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LXD9781 74HC595 SMD smd transistor w18 8 pin SMD ic 2068 QE R519 QE r525 smd 1a2 TG110-S453NX 20SOP SN74LVTH244ADWR EPF10K10ATC144-1 U27-34

T2D DIODE panasonic

Abstract: t2d 04 panasonic Gate On Delay Time CLOAD = 3300pF Each Driver 100 ns TG/BG t2D Synchronous Gate Off to , N-channel MOSFET, the anode of the Schottky diode, and the (­) terminal of CIN. BG: High Current Gate , this pin is from a diode drop below INTVCC to (VIN + INTVCC). SW: Switch Node Connection to Inductor and Bootstrap Capacitor. Voltage swing at this pin is from a Schottky diode (external) voltage , recharged from INTVCC through an external diode when the top MOSFET is turned off. As VIN decreases
Linear Technology
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LTC1735-1 t2d 04 panasonic T2D 68 zener diode LTC1735IS ltc351 2N7002 FDS6680A 1375/LT1376 LTC1628 LTC1702 LTC1709 LTC1735

ir2910

Abstract: NPN RF Amplifier 3300pF Each Driver 100 ns TG/BG t2D Synchronous Gate Off to Top Gate On Delay Time CLOAD , the Schottky diode, and the (­) terminal of CIN. BG: High Current Gate Drive for Bottom N-Channel , Driver. The bootstrap capacitor is returned to this pin. Voltage swing at this pin is from a diode drop , . Voltage swing at this pin is from a Schottky diode (external) voltage drop below ground to VIN. TG , bootstrap capacitor CB. This capacitor is normally recharged from INTVCC through an external diode when the
Linear Technology
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LTC1435 ir2910 NPN RF Amplifier Marcon electrolytic EEFUEOG181R LRF2010-01-R005J LTC1735F LTC1625/LTC1775 LTC1771 LTC1772 LTC1773

LTC1435

Abstract: T2D DIODE Gate On Delay Time CLOAD = 3300pF Each Driver 100 ns TG/BG t2D Synchronous Gate Off to , anode of the Schottky diode, and the (­) terminal of CIN. BG (Pin 11): High Current Gate Drive for , Bootstrap Capacitor. Voltage swing at this pin is from a Schottky diode (external) voltage drop below , to this pin. Voltage swing at this pin is from a diode drop below INTVCC to (VIN + INTVCC). TG , capacitor CB. This capacitor is normally recharged from INTVCC through an external diode when the top
Linear Technology
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LTC1735CGN MBRS340T3 THCR70E1H226ZT R005J VN2222L B1735 SSOP-36 TSSOP-20 LTC3832 LTC4008
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